VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• DC motor control and drives
• Battery charges
• Welders
• Power converters
• Lighting control
• Heat and temperature control
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 135 A to 160 A
Type Modules - thyristor, standard
Package INT-A-PAK
INT-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS
IT(AV) 85 °C 135 140 160 A
IT(RMS) 300 310 355
A
ITSM
50 Hz 3200 4500 4870
60 Hz 3360 4712 5100
I2t50 Hz 51.5 102 119 kA2s
60 Hz 47 92.5 108
I2t 515.5 1013 1190 kA2s
VRRM Range 400 to 1600 400 to 1600 400 to 1600 V
TJRange -40 to +125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-VSK.136
VS-VSK.142
VS-VSK.162
04 400 500
50
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 135 140 160 A
85 85 85 °C
Maximum RMS on-state current IT(RMS) As AC switch 300 310 355
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
t = 10 ms No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3200 4500 4870
t = 8.3 ms 3360 4712 5100
t = 10 ms 100 % VRRM
reapplied
2700 3785 4100
t = 8.3 ms 2800 3963 4300
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
51.5 102 119
kA2s
t = 8.3 ms 47 92.5 108
t = 10 ms 100 % VRRM
reapplied
36.5 71.6 84
t = 8.3 ms 33.3 65.4 76.7
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 0.86 0.83 0.8 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.05 1 0.98
Low level value on-state
slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 2.02 1.78 1.67
m
High level value on-state
slope resistance rt2 (I > x IT(AV)), TJ maximum 1.65 1.43 1.38
Maximum on-state voltage drop VTM ITM = x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum forward voltage drop VFM ITM = x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum holding current IHAnode supply = 6 V initial IT = 30 A, TJ = 25 °C 200
mA
Maximum latching current ILAnode supply = 6 V resistive load = 1 
Gate pulse: 10 V, 100 μs, TJ = 25 °C 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time tgd TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
1
μs
Typical rise time tgr 2
Typical turn-off time tqITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 50 to 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = 125 °C 50 mA
RMS insulation voltage VINS 50 Hz, circuit to base,
all terminals shorted, t = 1 s 3500 V
Critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum,
exponential to 67 % rated VDRM 1000 V/μs
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 12 W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 3
Maximum peak gate current IGM
tp 5 ms, TJ = TJ maximum
3A
Maximum peak negative
gate voltage - VGT 10
V
Maximum required DC
gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load; Ra = 1
4
TJ = 25 °C 2.5
TJ = TJ maximum 1.7
Maximum required DC
gate current to trigger IGT
TJ = - 40 °C 270
mATJ = 25 °C 150
TJ = TJ maximum 80
Maximum gate voltage
that will not trigger VGD
TJ = TJ maximum, rated VDRM applied
0.3 V
Maximum gate current
that will not trigger IGD 10 mA
Maximum rate of rise of
turned-on current dI/dt TJ = TJ maximum, ITM = 400 A rated VDRM applied 300 A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS
Maximum junction operating
temperature range TJ-40 to +125
°C
Maximum storage
temperature range TStg -40 to +150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.18 0.18 0.16
K/W
Maximum thermal resistance,
case to heatsink per module RthCS Mounting surface, smooth, flat and greased 0.05
Mounting
torque ± 10 %
IAP to heatsink A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6 Nm
busbar to IAP
Approximate weight 200 g
7.1 oz.
Case style INT-A-PAK
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
K/WVSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020
VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
VSK.136.. Series
RthJC (DC) = 0.18 K/W
70
80
90
100
110
120
130
0 50 100 150 200 250
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.136.. Series
RthJC (DC) = 0.18 K/W
0
50
100
150
200
250
300
0 30 60 90 120 150
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180
120
90
60
30
VSK.136.. Series
Per Junction
TJ = 125°C
0
50
100
150
200
250
300
350
0 50 100 150 200 250
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
DC
180
120
90
60
30
VSK.136.. Series
Per Junction
T = 125°C
J
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At A ny Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
In itial T = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
VSK.136.. Series
Per Junction
1000
1500
2000
2500
3000
3500
11.010.0
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
VSK.1 36.. Series
Per Junction
In itia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration. Control
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
0255075100125
M axim um A llow a b le Am bient Tem pera ture (°C)
0.04K/W
R=0.01 K/W- ΔR
thSA
0.08K/W
0.12K/W
0.16K/W
0.4K/W
0.25K/W
0.6K/W
1K/W
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
180
120
90
60
30
Total RMS Output Current (A)
Maximum Total O n-state Power Loss (W)
Conduction Angle
VSK.136.. Series
Per Module
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
0.04K/W
0.08K/W
0.12K/W
0.2K/W
0.35K/W
0.6K
/W
0
100
200
300
400
500
600
700
800
900
1000
0 55 110 165 220 275
Total Output Current (A)
Maximum Total Power Loss (W)
2 x VSK.136.. Series
Single Phase Bridge
Connected
T = 1 2 5°C
J
180
(Sine)
180
(Rect)
R=0.01K/W-Δ R
thA
S
0255075100125
M ax im u m A llo w a b le A m b ie n t Tem p e ra tu re (°C)
R=0.04K/W-Δ R
0.08K/W
0.1K/W
0.16K/W
0.25K/W
0.4K/W
1K/W
thSA
0
300
600
900
1200
1500
0 100 200 300 400
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x VSK.136.. Series
Three Phase Bridge
Connected
T = 1 2 5°C
J
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
Fig. 13 - On-State Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0306090120150
30
60
90
120
180
M a x im um A llo w ab le C ase T em p erature (°C)
Conduction Angle
Average Forward Current (A)
VSK.142.. Series
R (DC ) = 0.18 K/W
thJC
0
50
100
150
200
250
0306090120150
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180
120
90
60
30
VSK.142.. Series
Per Junction
T = 12 5°C
J
0
50
100
150
200
250
300
350
050100150200250
DC
180
120
90
60
30
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.142.. Series
Per Junction
T = 1 2 5°C
J
1500
2000
2500
3000
3500
4000
4500
001011
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Peak Half Sine W ave O n -stat e C urren t (A)
J
In itial T
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At A ny Rated Load Condition And With
Rated V Applied Following Surge.
VSK.142.. Series
Per Junction
RRM
J
1500
2000
2500
3000
3500
4000
4500
5000
11.010.0
Pea k Half Sine W ave On-state C urren t (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
J
No Voltage Reapplied
Rated V Reapplied
VSK.142.. Series
Per Junction
RRM
In itial T
= 125°C
J
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 16 - On-State Power Loss Characteristics
Fig. 17 - On-State Power Loss Characteristics
Fig. 18 - On-State Power Loss Characteristics
R=0.01K/W-Δ R
0255075100125
M axim um A llowa b le Am b ient Tem pera ture (°C)
thSA
0.04K/W
1K/W
0.6K/W
0.4K/W
0.25K/W
0.08K/W
0.12K/W
0.16K/W
0
100
200
300
400
0 50 100 150 200 250 300
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W )
Conduction Angle
VSK.142.. Series
Per Module
T = 125°C
J
180
120
90
60
30
R=0.01K/W-Δ R
0255075100125
Maximum Allowable Ambient Temperature (°C)
thSA
0.6K/W
0.25K/W
0.16K/W
0.12K/W
0.08K/W
0.04K/W
0
200
400
600
800
1000
0100200300
Total Output Current (A)
Maximum Total Power Loss (W)
180
(Sine)
180
(Rect)
2 x VSK.142.. Series
Single Phase Bridge
Connected
T = 12 5°C
J
0255075100125
M axim um Allow a b le Am bie nt Tem pera ture (°C)
R=0.02K/W-Δ R
thSA
0.04K/W
0.06K/W
0.08K/W
0.1K/W
0.16K/W
0.2K/W
0
400
800
1200
1600
0 50 100 150 200 250 300 350 400 450
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x VSK.142.. Series
Three Phase Bridge
Connected
T = 125°C
J
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 19 - Current Ratings Characteristics
Fig. 20 - Current Ratings Characteristics
Fig. 21 - On-State Power Loss Characteristics
Fig. 22 - On-State Power Loss Characteristics
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 24 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0306090120150180
30
60
90
120
180
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
VSK.162.. Series
R (D C) = 0.16 K/W
thJC
60
70
80
90
100
110
120
130
0 50 100150200250300
DC
30
60
90
120
180
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.162.. Series
R (DC) = 0.16 K/W
thJC
0
50
100
150
200
250
300
350
400
0 20406080100120140160180
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.162.. Series
Per Junction
T = 125°C
J
180
120
90
60
30
0
50
100
150
200
250
300
350
400
0 306090120150180210240270
DC
180
120
90
60
30
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.162.. Series
Per Junction
T = 125°C
J
1500
2000
2500
3000
3500
4000
4500
001011
Num ber Of Eq ua l Am p litud e Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applie d Follow ing Surge.
RRM
Peak Half Sine W ave On-state Current (A)
In itial T = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VSK.162.. Series
Per Junction
J
1500
2000
2500
3000
3500
4000
4500
5000
11.010.0
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
VSK.162.. Series
Per Junction
In itial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pulse Train Duration. Control
J
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 25 - On-State Power Loss Characteristics
Fig. 26 - On-State Power Loss Characteristics
Fig. 27 - On-State Power Loss Characteristics
0 25 50 75 100 125
M axim um Allow a b le Am b ie nt Tem p era ture (°C)
R=0.02K/W-Δ R
thSA
0.04K/W
0.06K/W
0.08K/W
0.1K/W
0.16K/W
0.2K/W
0
100
200
300
400
500
600
0 100 200 300 400
180
120
90
60
30
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
VSK.162.. Series
Per Module
T = 125°C
J
R=0.04K/W-Δ R
0255075100125
M a xim um A llo w a ble A m b ient Tem pera ture (°C)
thS
A
0.08K/W
0.2K/W
1K/W
0.6K/W
0.4K/W
0.12K/W
0.3K/W
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300
Total Output Current (A)
Maximum Total Power Loss (W)
2 x VSK.162.. Series
Single Phase Bridge
Connected
T = 1 2 5°C
J
180
(Sine)
180
(Rect)
0 25 50 75 100 125
M a xim um A llo w a b le A m b ie n t Te m p era tu re (°C)
R=0.02K/W-Δ R
0.04K/W
0.2K/W
0.08K/W
0.12K/W
0.6K/W
0.3K/W
thSA
0
250
500
750
1000
1250
1500
0 50 100 150 200 250 300 350 400 450
Total Output Current (A)
Maximum Total Power Loss (W)
120
(Rect)
3 x VSK.162.. Series
Three Phase Bridge
Connected
T = 12 5°C
J
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Fig. 28 - On-State Voltage Drop Characteristics
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 30 - On-State Voltage Drop Characteristics
Fig. 31 - Thermal Impedance ZthJC Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
Fig. 33 - Thermal Impedance ZthJC Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
012345
T = 25˚C
J
T = 125˚C
VSK.136.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
10000
012345
T = 125˚C
T = 25˚C
VSK.142.. Series
Per Junction
J
J
1
10
100
1000
10000
012345
T = 25˚C
J
T = 125˚C
VSK.162.. Series
Per Junction
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0
.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.136.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC
0.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.142.. Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
0.01
0.1
1
0.01 0.1 1 10
Steady State Value
(DC Operation)
VSK.162.. Series
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Jul-2018 11 Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Re co m m ended loa d line fo r
VGD
IG D
(1) PGM = 200 W, tp = 300 s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated dI/dt: 15 V, 40 W
tr = 1 s, tp >= 6 s
rated dI/dt: 20 V, 20 W
tr = 0.5 s, tp >= 6 s
VSK.136..142..162.. Series
Frequency Limited by PG(AV)
Instantaneous Gate Current (A)
1
2- Circuit configuration
3- Current rating: I
T(AV)
4- Voltage code x 100 = V
RRM
5- PbF = Lead (Pb)-free
Device code
51 32 4
VS-VS 16 PbFKT 162
- Vishay Semiconductors product
VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
www.vishay.com Vishay Semiconductors
Revision: 27-Jul-2018 12 Document Number: 94513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two SCRs doubler circuit T
SCR/diode doubler circuit, positive control H
SCR/diode doubler circuit, negative control L
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95067
-
+
~
K1 K2
G1 G2
-
+
VSKT...
-
+
~
K1
G1
-
+
VSKH...
-
+
VSKL...
-
+
~
K2
G2
Document Number: 95067 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 15-Feb-08 1
INT-A-PAK IGBT/Thyristor
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
80 (3.15)
Ø 6.5 (0.25 DIA)
30 (1.18)
9 (0.33)
7 (0.28)
28 (1.10)
29 (1.15)
37 (1.44)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
7
6
5
4
123
23 (0.91)23 (0.91)17 (0.67)
35 (1.38)
14.5 (0.57)
3 screws M6 x 10 66 (2.60)
94 (3.70)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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VS-VSKT162/16PBF VS-VSKH142/12PBF VS-VSKH162/04PBF VS-VSKH142/14PBF VS-VSKH162/16PBF VS-
VSKH136/16PBF VS-VSKH162/08PBF VS-VSKL136/16PBF VS-VSKL142/08PBF VS-VSKL136/14PBF VS-
VSKL162/16PBF VS-VSKL142/12PBF VS-VSKL142/14PBF VS-VSKT136/16PBF VS-VSKT162/08PBF VS-
VSKT136/14PBF VS-VSKT162/12PBF VS-VSKT142/12PBF VS-VSKT142/14PBF VS-VSKT162/04PBF VS-
VSKT142/08PBF VS-VSKH136/12PBF VS-VSKL142/16PBF VS-VSKL162/12PBF VS-VSKH136/14PBF VS-
VSKH162/12PBF VS-VSKT162/14PBF VS-VSKL136/12PBF VS-VSKH162/14PBF VS-VSKL162/08PBF VS-
VSKT142/16PBF VS-VSKL136/04PBF VS-VSKL136/08PBF VS-VSKH136/04PBF VS-VSKL162/14PBF VS-
VSKT136/04PBF VS-VSKH136/08PBF VS-VSKH142/16PBF VS-VSKH142/08PBF VS-VSKT136/12PBF VS-
VSKT136/08PBF