1N4531 1N4534 1N4532 1N4536 1N4533 Diode, switching, leaded These diodes are in a glass sealed envelope and are suitable for lead Dimensions (Units : mm) mounting on printed circuit boards. CATHODE BAND Features soteon * available in DO-34 package ye = pO Op * part markings, see following table | ase vena wee oia20.2 Applications * general rectification Cathode band color and marking Part no. Color Marking 1N4531 Black 31R 1N4532 Black 32R 1N4533 Black 33R 1N4534 Black 34R 1N4536 Black 36R Absolute maximum ratings (T, = 25C) Peak pc Peak Mean | Forward | Peak Power | Contact ; Operating | Storage reverse | reverse | forward |rectifying| current | forward dissip- temper- | temperature | temperature Part no. | voltage | voltage | current | current current ation ature Va (V) | Va() [lem (mA)| to (may | te (ma) |'F5%) 4} pamwy | 110C) | Tope C) | Tetg CC) 1N4531 100 75 450 150 200 2 500 200 |-65 ~ +200|-65 ~ +200 1N4532 75 50 450 150 200 2 500 200 |-65 ~ +200|-65 ~ +200 1N4533 40 30 450 150 200 2 500 200 |-65 ~ +200|--65 ~ +200 1N4534 75 50 450 150 200 2 500 200 = |-65 ~ +200|-65 ~ +200 1N4536 35 25 450 150 200 2 500 200 = |-65 ~+200|-65 ~ +200 Diodes RONM 63 1N4531, 1N4532, 1N4533, 1N4534, 1N4536 Switching diodes Electrical characteristics (unless otherwise noted, T, = 25C) BV (V) Reverse current Revrec Vv Forward voltage V- (V) (min) lp (WA) (max) time elelele eo | @ 25C | @ 150C tr (ns) amalsma| 12 | 20 | 30 | 50 5aA 100 Vr Va We toma mA | mA | mA | mA HA (vy) (Vv) RL = 1002 7 0.025] 20 1.0 75 | 100 30 | 75 50.0} 20 4 To 75 0.1 | 50 | 100} 50 2 0.53} 0.59 | 0.62 0.70 | 0.74 5105910671070 0.31 |0.88 40 0.05 | 30 | 50.0] 30 2 9 | 0.53 | 0.59] 0.62 0.70 | 0.74 % 1059|067/0.70 0.811088 75 0.05 | 50 |50.0] 50 2 To 35 0.10} 25 | 100] 25 2 FORWARD CURRENT | tr (mA) '. The upper value for Ve refers to Ve min and the lower to Ve max. Electrical characteristic curves 04 06 TO 12 14 16 FORWARD VOLTAGE : Vr (V) Figure 1 REVERSE CURRENT : ta (nA) REVERSE VOLTAGE : Va (V) Figure 2 Diodes Switching diodes 1N4531, 1N4532, 1N4533, 1N4534, 1N4536 i 30 5 ~ {1 MHz Va=6V 3 = v2 5--+ Poo aap a = 4 a = g oe = 2. g wi a 3p 7 ~, x z 15 iw 3 = 1.0 = g ? La ly . ac 4 | f yf 4 tT Zz 05 w E va) Zo S 5 10 15 20 26 30 A) 4 12 16 20 REVERSE VOLTAGE : Va (V) FORWARD CURRENT : Ir (mA) Figure 3 Figure 4 SURGE CURRENT : A St a 3 bE 2 lu a a 2 oO 08) Q a > wn PULSE WIDTH : Tw (ms) Figure 5 Diodes noum 65 1N4531, 1N4532, 1N4533, 1N4534, 1N4536 Switching diodes Electrical characteristic curves1N4532, 1N4533, 1N4534, 1N4536 200 100 50 FORWARD CURRENT : le (mA) t FORWARD VOLTAGE : Vr (V) Figure 6 ~ 6 4 2 {=1 MHz os wn q 4 c Ww eK 23 ly 2 2 iB XQ WwW 2 | a E < 0 a "oO 5 is oc 28 30 REVERSE VOLTAGE : Ve (V) Figure 8 Ta=25'C 12 Single pulse SL ~ ~ a > | + SURGE CURRENT : Isurge (A) a 0 O1m im 10m 00m 1 PULSE WIDTH : Tw (ms) Figure 10 100 50 ae 20 10 REVERSE CURRENT : Ia (nA) ny 0.5 0.2 0.1 REVERSE VOLTAGE : Va (V) Figure 7 100 Va-6V te 1 10IR . y 2 pf- 4 4 J oo WW = - r Z 8 S| LJ L ul w 25 YY > WW fr 0 tL 0 5 10 15 2 28 30 FORWARD CURRENT : Ie (mA) Figure 9 0.01 yF Diode under test } | { | >> Pulse generator 5kQ Sampling Output: 50 W $50 Q {oscilloscope Test circuit for measurin reverse recovery time (t,, Figure 11 66 ROM Diodes