LORAL MICROWAVE-FSTI SLE D Mm 5540130 9000471 T30 GaAs PARAMETRIC AMPLIFIER VARACTORS DESCRIPTION The GC5510 series paramp varactors are diffused junction gal- lium arsenide devices featuring the lowest series resistance and highest cut-off frequency available. This device series has been qualified for use in military and space communications systems and meets all the requirements of MIL-S-19500. These diodes are available in a variety of ceramic packages - specific packages are listed in Note 1. All devices in this series have high capacitance non linearity as can be determined from formulas for ANj (.52 typ) and B (2.15 typ) in Note 3. FEATURES * High gain - bandwidth products * Low noise temperatures * High reliability - field proven APPLICATIONS The extremely high cut-off frequency and high capacitance non-linearity make these varactors perfectly suited for both room temperature and cryogenic parametric amplifiers. They are also used in tunable oscillators and filters as well as medium power harmonic generators. These varactors are particularly recommended for high Q circuits with inputs above 3 GHz. ELECTRICAL SPECIFICATIONS Ta = 25C MINIMUM CUTOFF! JUNCTION CAPACITANCE RANGE CJO AT 1 MHz FREQUENCY @ -6V (FC-6) 0.1-0.2Pf 0.2-0.3 Pf 0.3-0.4 Pt 0.4-0.5 Pf 0.5 - 0.6 Pf 0.6 - 0.7 Pf 0.7 - 0.8 Pf 0.8 - 0.9 Pf 0.9- 1.0 Pt 200 GHz GC5511A GC5512A GC5513A GC5514A GC5515A GC5516A GC5517A GC55184 GC5519A 250 GHz 6055118 GC55128 GC55138 GC5514B GC5515B GC5516B GC5517B 6C5518B GC5519B 300 GHz GC5511C GC5512C GC5513C GC5514C GC5515C GC5516C GC5517C GC5518C GC5519C 350 GHz GC5511D 6C5512D GC5513D GC5514D GC5515D GC5516D GC5517D GC5518D GC5519D 400 GHz GCS5511E GC5512E GC5513E GC5514E GC5515E GC5516E GC5517E GC5518E GC5519E 450 GHz GC5511F GC55125 GC5513F GC5514F GC5515F GC5516F GC5517F GC5518F 500 GHz GC5511G 6C5512G GC5513G GC5514G GC5515G GC5516G GC5517G 550 GHz GC5511H GC5512H GC5513H GC5514H GC5515H GC5516H 600 GHz GC5511J GC5512J GC5513J GC5514J GC5515J 650 GHz GCS511K GC5512K GC5513K GC5514K 700 GHz GC5511L GC5512L GC5513L 750 GHz GC5511M GC5512M NOTE: 1. FREQUENCY CUT-OFF IS MEASURED USING THE MODIFIED DeLOACH TECHNIQUE. SERIES RESONANT FREQUENCY DATA ARE AVAILABLE UPON REQUEST. FREQUENCY CUT-OFF AT -6 VOLTS DETERMINED BY: Fc-g="o 9 NOTES 1. Available package styles include 30, 45, 70, 75, 80, 81, 85, 88 and 89. 2. Standard capacitance tolerance is +10% however, tighter tighter tolerances may be available upon request. Please contact your local representative or the factory direct for your special needs. Capacitance is measured at 1 MHz. ANj = Sens =.52 (typical) B= Ee =2.15( typical) 4. Thecathode is normally the heatsink end of each package; reverse polarity is available for specific packages at a slightly higher cost. 5. All devices are subjected to a 24 hour operational burn-in at 80% VB and 100C before final test. j-4 RATINGS Minimum Breakdown Voltage: 6V at 10 HA Operating and Storage Temperature: +20K to +200C LORAL. Microwave - FSI 57