ZXTN2010GTA - DIODES INC - Datasheet.Directory

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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December 2015

ZXTN2010G

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

SOT223

Features

 BVCEO > 60V

 IC = 6A Continuous Collector Current

 ICM = 20A Peak Pulse Current

 Low Saturation Voltage VCE(SAT) < 60mV Max @ 1A

 RSAT = 35mΩ @ Ic =6A for Low Equivalent On-Resistance

 hFE Specified up to 10A for High Gain Hold Up

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic. “Green” Molding Compound;

UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Plated Leads; Solderable per

MIL-STD-202, Method 208

 Weight: 0.112 grams (Approximate)

Applications

 Emergency Lighting Circuits

 Motor Driving (Including DC Fans)

 Solenoid, Relay and Actuator Drivers

 DC Modules

 Backlight Inverters

Ordering Information (Note 4)

Part Number

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXTN2010GTA

ZXTN2010

7

12

1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

Green

Top View

Pin-Out Top View

Device Schematic

SOT223

ZXTN 2010 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

YWW

ZXTN

2010

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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December 2015

ZXTN2010G

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

150

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

7

V

Continuous Collector Current

IC

6

A

Peak Pulse Current

ICM

20

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

PD

3.0

24

W

mW/°C

(Note 6)

1.6

12.8

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

42

°C/W

(Note 6)

RJA

78

Thermal Resistance, Junction to Lead

(Note 7)

RJL

8.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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December 2015

ZXTN2010G

Thermal Characteristics and Derating Information

100m 110 100

10m

100m

1

10

Single Pulse. Tamb=25OC

See note (5)

VCE(sat)

Limit

100s

1ms

10ms

100ms

1s

DC

Safe Operating Area

IC Collector Current (A)

VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

See note (6)

See note (5)

Derating Curve

Temperature (OC)

Max Power Dissipation (W)

100μ 1m 10m 100m 110 100 1k

0

10

20

30

40 See note (5)

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (OC/W)

Pulse Width (s) 100μ 1m 10m 100m 110 100 1k

1

10

100 Single Pulse. Tamb=25OC

See note (5)

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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ZXTN2010G

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

150

190

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCER

150

190

—

V

IC = 1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

60

80

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7

8.1

—

V

IE = 100µA

Collector Cut-Off Current

ICBO

—

—

—

—

50

0.5

nA

µA

VCB = 120V

VCB = 120V, TA = +100°C

Collector Cut-Off Current

ICER

R≤1kΩ

—

—

—

—

100

0.5

nA

µA

VCB = 120V

VCB = 120V, TA = +100°C

Emitter Cut-Off Current

IEBO

—

10

nA

VEB = 6V

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

—

—

20

45

50

100

210

30

60

70

135

260

mV

IC = 0.1A, IB = 5mA

IC = 1A, IB = 100mA

IC = 1A, IB = 50mA

IC = 2A, IB = 50mA

IC = 6A, IB = 300mA

Base-Emitter Saturation Voltage (Note 9)

VBE(sat)

—

1

1.1

V

IC = 6A, IB = 300mA

Base-Emitter Turn-on Voltage (Note 9)

VBE(on)

—

0.94

1.05

V

IC = 6A, VCE = 1V

DC Current Gain (Note 9)

hFE

100

55

20

200

105

40

—

300

—

IC = 10mA, VCE = 1V

IC = 2A, VCE = 1V

IC = 5A, VCE = 1V

IC = 10A, VCE = 1V

Transition Frequency

fT

—

130

—

MHz

VCE = 10V, IC = 100mA,

f = 50MHz

Output Capacitance (Note 9)

Cobo

—

31

—

pF

VCB = 10V, f = 1MHz

Switching Times

tON

—

42

—

ns

VCC = 10V, IC = 1A,

IB1 = -IB2 = 100mA

tOFF

—

760

—

Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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ZXTN2010G

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 110

10m

100m

1

1m 10m 100m 110

0.0

0.1

0.2

0.3

0.4

0.5

0.6

1m 10m 100m 110

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 110

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m 110

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

200

250

VCE(SAT) v IC

Tamb=25OC

IC/IB=50

IC/IB=20

IC/IB=10

VCE(SAT) (V)

IC Collector Current (A)

VBE(SAT) v IC

IC/IB=10

100OC

25OC

-55OC

VCE(SAT) (V)

IC Collector Current (A)

hFE v IC

VCE=1V

-55OC

25OC

100OC

Normalised Gain

IC Collector Current (A)

25OC

VCE(SAT) v IC

IC/IB=10

100OC

-55OC

VBE(SAT) (V)

IC Collector Current (A)

VBE(ON) v IC

VCE=1V

100OC

25OC

-55OC

VBE(ON) (V)

IC Collector Current (A)

Typical Gain (hFE)

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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December 2015

ZXTN2010G

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

SOT223

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT223

Dim

Min

Max

Typ

A

1.55

1.65

1.60

A1

0.010

0.15

0.05

b

0.60

0.80

0.70

b1

2.90

3.10

3.00

C

0.20

0.30

0.25

D

6.45

6.55

6.50

E

3.45

3.55

3.50

E1

6.90

7.10

7.00

e

-

4.60

e1

-

2.30

L

0.85

1.05

0.95

Q

0.84

0.94

0.89

All Dimensions in mm

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

A1

A

7°

D

b

e

e1

b1

C

E1

L

0°-10°

Q

E

0.25

Seating

Plane

Gauge

Plane

X1

Y1

Y

XC

C1 Y2

ZXTP2010G

Document number: DS33660 Rev. 3 - 2

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December 2015

ZXTN2010G

IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

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labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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