2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm * Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) * High speed switching time: tstg = 1.0 s (typ.) * Small flat package * PC = 1.0 to 2.0 W (mounted on a ceramic substrate) * Complementary to 2SC2873 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.4 A PC Collector power dissipation 500 PC 1000 (Note 1) Junction temperature Storage temperature range PW-MINI JEDEC mW Tj 150 C Tstg -55 to 150 C JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note 1: Mounted on a ceramic substrate (250 mm x 0.8 t) 1 2004-07-07 2SA1213 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 -0.1 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 A V (BR) CEO IC = -10 mA, IB = 0 -50 V VCE = -2 V, IC = -0.5 A 70 240 hFE (2) VCE = -2 V, IC = -2.0 A 20 Collector-emitter saturation voltage VCE (sat) IC = -1 A, IB = -0.05 A -0.5 V Base-emitter saturation voltage VBE (sat) IC = -1 A, IB = -0.05 A -1.2 V fT Collector-emitter breakdown voltage hFE (1) DC current gain (Note 2) VCE = -2 V, IC = -0.5 A 120 MHz Cob VCB = -10 V, IE = 0, f = 1 MHz 40 pF Turn-on time ton IB2 0.1 Storage time tstg 1.0 0.1 Collector output capacitance Switching time INPUT IB1 20 s Fall time Note 2: hFE (1) classification tf -IB1 = IB2 = 0.05 A, DUTY CYCLE 1% IB2 IB1 OUTPUT 30 Transition frequency -30 V s O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) N Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1213 VCE - IC VCE - IC -1.6 -1.6 VCE -1.2 -10 IB = -5 mA -20 -30 -0.8 -40 -0.4 0 0 -0.4 -0.8 -1.2 Collector current IC -1.6 Common emitter (V) Ta = 25C Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter Ta = 100C -1.2 IB = -3 mA -0.4 -1.2 Collector current IC -1.6 -2.0 (A) hFE - IC Common emitter Common emitter (V) hFE Ta = -55C -1.2 IB = -5 mA -10 -20 -30 -40 -0.8 -0.4 VCE = -2 V 500 DC current gain VCE Collector-emitter voltage -0.8 1000 Ta = 100C 300 25 -55 100 50 30 -50 10 -10 -0.4 -0.8 -1.2 Collector current IC -1.6 -30 -100 -300 Collector current -2.0 -1000 -3000 IC (mA) (A) VCE (sat) - IC VBE (sat) - IC -1 -10 Common emitter Common emitter IC/IB = 20 -0.5 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) -30 -50 VCE - IC -0.3 Ta = 100C -0.1 -0.05 25 -55 -0.03 -0.01 -10 -20 -0.4 (A) -1.6 0 0 -10 -40 0 0 -2.0 -5 -0.8 -30 -100 Collector current -300 -1000 -3 IC (mA) Ta = -55C -1 -0.5 25 100 -0.3 -0.1 -10 -3000 IC/IB = 20 -5 -30 -100 Collector current 3 -300 -1000 -3000 IC (mA) 2004-07-07 2SA1213 IC - VBE Safe Operating Area -2.0 -3000 Common emitter IC max (pulse)* -1.6 10 ms* 1 ms* 100 ms* 1 s* IC max -1000 (continuous) (mA) -500 -1.2 Ta = 100C 25 -55 Collector current IC Collector current IC (A) VCE = -2 V -0.8 -0.4 0 0 -0.4 -0.8 -1.6 -1.2 Base-emitter voltage VBE -2.0 -300 DC operation Ta = 25C -100 -50 -30 -10 *: Single nonrepetitive pulse Ta = 25C -2.4 -5 (V) -3 Curves must be derated linearly with increase in temperature. Tested without a substrate. -1 -0.1 -0.3 -1 -3 Collector-emitter voltage VCEO max -10 VCE -30 -100 (V) PC - Ta Collector power dissipation PC (W) 1.2 1.0 (1) Mounted on ceramic substrate 2 (250 mm x 0.8 t) (1) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 Ambient temperature Ta 120 140 160 (C) 4 2004-07-07 2SA1213 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07