TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
T4-LDS-0102 Rev. 1 (090097) Page 1 of 2
DEVICES LEVELS
2N7224 2N7224U JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 100 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 34 Adc
Continuous Drain Current
T
C = +100°C ID2 21 Adc
Max. Power Dissipation
T
C = +25°C Ptl 150
(1) W
Drain to Source On State Resistance Rds(on) 0.070
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 21A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
IDSS1
IDSS2
25
0.25
µAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 21A pulsed
VGS = 10V, ID = 34A pulsed
Tj = +125°C
VGS = 10V, ID = 21A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.070
0.081
0.11
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 34A pulsed VSD 1.8 Vdc
TO-254AA
U-PKG (SMD -1 )
(TO-267AB)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
T4-LDS-0102 Rev. 1 (090097) Page 2 of 2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 34A
VDS = 50V
Qg(on)
Qgs
Qgd
125
22
65
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Sy mbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 21A, VGS = 10Vdc,
Gate drive impedance = 2.35Ω,
VDD = 50Vdc
td(on)
tr
td(off)
tf
35
190
170
130
ns
Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V,
ID = 34A trr 500 ns
