Vishay Siliconix
Si4800BDY
Document Number: 72124
S-70138-Rev. G, 22-Jan-07
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1
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
• TrenchFET® Power MOSFET
• High-Efficient PWM Optimized
• 100 % UIS and Rg Tested
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)I
D (A)
30 0.0185 at VGS = 10 V 9
0.030 at VGS = 4.5 V 7
S
SD
D
D
S
GD
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4800BDY-T1
Si4800BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 25
Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID
96.5
A
TA = 70 °C 7.0 5.0
Pulsed Drain Current (10 µs Pulse Width) IDM 40
Continuous Source Current (Diode Conduction)a, b IS2.3
Avalanche Current L = 0.1 mH IAS 15
Single-Pulse Avalanche Energy EAS 11.25 mJ
Maximum Power Dissipationa, b TA = 25 °C PD
2.5 1.3 W
TA = 70 °C 1.6 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
Limits
Unit Typ Max
Maximum Junction-to-Ambientat ≤ 10 sec RthJA
40 50
°C/W
Steady State 70 95
Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 72124
S-70138-Rev. G, 22-Jan-07
Vishay Siliconix
Si4800BDY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.8 1.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V 1µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 30 A
Drain-Source On-State ResistancearDS(on)
VGS = 10 V, ID = 9 A 0.0155 0.0185 Ω
VGS = 4.5 V, ID = 7 A 0.023 0.030
Forward Transconductanceagfs VDS = 15 V, ID = 9 A 16 S
Diode Forward VoltageaVSD IS = 2.3 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = 15 V, VGS = 5.0 V, ID = 9 A
8.7 13
nCGate-Source Charge Qgs 1.5
Gate-Drain Charge Qgd 3.5
Gate Resistance Rg0.5 1.4 2.2 Ω
Tur n -O n D e lay T i m e td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
715
ns
Rise Time tr12 20
Turn-Off Delay Time td(off) 32 50
Fall Time tf14 25
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/µs 30 60
Document Number: 72124
S-70138-Rev. G, 22-Jan-07
www.vishay.com
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Vishay Siliconix
Si4800BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
35
40
012345
VGS = 10 thru 5 V
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
- On-Resistance (Ω)rDS(on)
0.000
0.008
0.016
0.024
0.032
0.040
0 5 10 15 20 25 30
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
1
2
3
4
5
6
0246810
VDS = 15 V
ID = 9 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TC = - 55 °C
125 °C
25 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
0
200
400
600
800
1000
1200
048121620
VDS - Drain-to-Source Voltage (V)
Crss
C - Capacitance (pF)
Coss
Ciss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 9 A
TJ - Junction Temperature (°C)
rDS(on) - On-Resistance
(Normalized)
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Document Number: 72124
S-70138-Rev. G, 22-Jan-07
Vishay Siliconix
Si4800BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 °C
50
1
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
10
TJ = 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
ID = 9 A
- On-Resistance (Ω)rDS(on)
VGS - Gate-to-Source Voltage (V)
0
90
150
30
60
Power (W)
Time (sec)
120
11010-1
10-2
10-3
Safe Operating Area, Junction-to-Ambient
VDS - Drain-to-Source Voltage (V)
*VGS > minimum VGS at which rDS(on) is specified
100
1
0.1 1 10 100
0.01
10
100 ms
- Drain Current (A)ID
0.1
*Limited
by rDS(on)
TC = 25 °C
Single Pulse
1 s
10 s
dc
10 ms
1 ms
Document Number: 72124
S-70138-Rev. G, 22-Jan-07
www.vishay.com
5
Vishay Siliconix
Si4800BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72124.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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