2SB1325 / 2SD1999 Ordering number : EN3175B SANYO Semiconductors DATA SHEET 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features * * * * * Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Specifications ( ) : 2SB1325 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO (--)25 (--)20 V VEBO IC (--)6 V (--)4 A ICP PC (--)6 A 1.5 W 150 C --55 to +150 C Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm20.8mm) V Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current DC Current Gain Symbol ICBO hFE1 hFE2 Conditions VCB=(--)20V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)3A Marking 2SB1325 : BM 2SD1998 : DN Ratings min typ max (--)1.0 Unit A 70 50 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 33110EA TK IM / 82003 TS IM TA-3678 / O1598 HA(KT) 7149 MO, TS No.3175-1/4 2SB1325 / 2SD1999 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Gain-Bandwidth Product fT VCE=(--)2V, IC=(--)0.5A Output Capacitance Cob VCB=(--)10V, f=1MHz (60)45 Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)3A, IB=(--)150mA (--)0.25 Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)3A, IB=(--)150mA Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10A, IE=0A (--)25 V V(BR)CEO1 IC=(--)10A, RBE= (--)25 V V(BR)CEO2 IC=(--)10mA, RBE= (--)20 Diode Forwad Voltage VF IF=0.5A Base-to-Emitter Resistance RBE Collector-to-Emitter Breakdown Voltage (300)200 V V 1.5 V k Electrical Connection Collector Base Collector Base RBE RBE Emitter Emitter PNP hFE -- IC 2SB1325 VCE=2V 3 C 75 Ta= C 25 C --25 10 2 NPN hFE -- IC 2SD1999 VCE=2V 5C 7 Ta= DC Current Gain, hFE DC Current Gain, hFE V (--)1.5 unit : mm (typ) 7007B-004 2 pF (--)0.5 1.5 Package Dimensions 3 MHz 7 5 3 2 100 25C 5 3 2 10 10 7 7 5 C --25 7 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT04937 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT04938 No.3175-2/4 2SB1325 / 2SD1999 Cob -- VCB 100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V C 5 =2 a T C 75 5C --2 7 5 3 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT04940 VCE(sat) -- IC 2SD1999 IC / IB=20 3 C 5 =2 a T C 75 C 5 --2 2 0.1 7 5 3 2 3 7 2 0.1 75C 5 3 5 7 2 1.0 3 5 IT04934 VBE(sat) -- IC 2 Ta=25C C --25 7 5 Collector Current, IC -- A 3 2SD1999 IC / IB=20 C Ta=25 --25C 1.0 C 75 7 5 3 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 3 3 5 2 0.1 3 5 7 2 1.0 3 5 IT04936 PC -- Ta 1.8 2SB1325 / 2SD1999 10 1m ms 10 s Collector Dissipation, PC -- W IC=4A 2 0m 1.0 7 5 DC s op era tio 3 n 2 2SB1325 / 2SD1999 Ta=25C Single pulse Mounted on a ceramic board (250mm20.8mm) (For PNP, minus sign is omitted) 2 7 Collector Current, IC -- A ASO 0.01 0.1 5 IT04935 ICP=6A 3 Collector Current, IC -- A 2 IT04933 2SB1325 IC / IB=20 0.01 3 2 3 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 VBE(sat) -- IC 2 0.1 7 5 5 0.01 0.01 10 7 5 7 5 2 0.1 100 Collector-to-Base Voltage, VCB -- V 2SB1325 IC / IB=20 3 2SD1999 f=1MHz 2 0.1 5 7 100 IT04939 VCE(sat) -- IC 5 Cob -- VCB 2 2SB1325 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 1.6 1.5 1.4 M ou nt 1.2 ed on ac er 1.0 am ic 0.8 bo ar d (2 50 0.6 m 0.4 m2 0. 8m m ) 0.2 0 2 3 IT04941 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT04942 No.3175-3/4 2SB1325 / 2SD1999 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.3175-4/4