2SD1999 - ON Semiconductor L.L.C.

2SB1325 / 2SD1999

No.3175-1/4

Features

•Low saturation voltage.

•Contains diode between collector and emitter.

•Contains bias resistance between collector and emitter.

•Large current capacity.

•Small-sized package making it easy to provide high-density, small-sized hybrid ICs.

Specifications ( ) : 2SB1325

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (--)25 V

Collector-to-Emitter Voltage VCEO (--)20 V

Emitter-to-Base Voltage VEBO (--)6 V

Collector Current IC(--)4 A

Collector Current (Pulse) ICP (--)6 A

Collector Dissipation PC

Mounted on a ceramic board (250mm

✕0.8mm)

1.5 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Collector Cutoff Current ICBO VCB=(--)20V, IE=0A (--)1.0 μA

DC Current Gain hFE1V

CE=(--)2V, IC=(--)0.5A 70

hFE2V

CE=(--)2V, IC=(--)3A 50

Marking 2SB1325 : BM Continued on next page.

2SD1998 : DN

www.semiconductor-sanyo.com/network

Ordering number : EN3175B

33110EA TK IM / 82003 TS IM TA-3678 / O1598 HA(KT) 7149 MO, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

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SANYO Semiconductors

DATA SHEET

2SB1325 / 2SD1999

PNP / NPN Epitaxial Planar Silicon Transistors

Compact Motor Driver Applications

2SB1325 / 2SD1999

No.3175-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Gain-Bandwidth Product fTVCE=(--)2V, IC=(--)0.5A (300)200 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (60)45 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)3A, IB=(--)150mA (--)0.25 (--)0.5 V

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)3A, IB=(--)150mA (--)1.5 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)25 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO1I

C=(--)10μA, RBE=∞(--)25 V

V(BR)CEO2I

C=(--)10mA, RBE=∞(--)20 V

Diode Forwad Voltage VFIF=0.5A 1.5 V

Base-to-Emitter Resistance RBE 1.5 kΩ

Package Dimensions Electrical Connection

unit : mm (typ)

7007B-004

DC Current Gain, hFE

Collector Current, IC -- A IT04938

hFE -- IC

DC Current Gain, hFE

Collector Current, IC -- A IT04937

50.01 0.1 1.0

7 2357 2357 235

2SB1325

VCE=2V

--25

°C

Ta=75

°C

hFE -- IC

100

50.01 0.1 1.0

723572357235

Ta=75°

--25

°C

2SD1999

VCE=2V

RBE

Base

Collector

Emitter

PNP

RBE

Base

Collector

Emitter

NPN

2SB1325 / 2SD1999

No.3175-3/4

Collector-to-Emitter Voltage, VCE -- V

A S O

Collector Current, IC -- A

IT04941

0.1 1.0

23 57 10

23 57 23

1.0

0.1

0.01

Ambient Temperature, Ta -- °C

PC -- Ta

Collector Dissipation, PC -- W

IT04942

0 175

1.8

25 50 75 100 125 150

1.6

1.5

1.4

1.2

1.0

0.8

0.6

0.4

0.2

ICP=6A

IC=4A

10ms

1ms

DC operation

100ms

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

IT04940

10 23 5723 5723 57 1001.00.1

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

IT04939

10 23 5723 5723 57 1001.00.1

100

2SB1325

f=1MHz

2SB1325 / 2SD1999

Mounted on a ceramic board (250mm

✕0.8mm)

100

2SD1999

f=1MHz

2SB1325 / 2SD1999

Ta=25°C

Single pulse

Mounted on a ceramic board (250mm

✕0.8mm)

(For PNP, minus sign is omitted)

VCE(sat) -- IC

Collector Current, IC -- A

IT04934

0.01

0.1

0.1 1.0

23 57357 523

°C

--25°C

Ta=25

VBE(sat) -- IC

Collector Current, IC -- A

IT04936

3750.1 1.0

23 57 23 5

Collector Current, IC -- A

IT04933

0.01

0.1

°C

Ta=25

°C

--25

2SB1325

IC / IB=20

0.1 1.0

23 57357 523

VCE(sat) -- IC2SD1999

IC / IB=20

Collector Current, IC -- A

IT04935

0.01

0.1 1.0

23 57357 523

VBE(sat) -- IC2SB1325

IC / IB=20

°C

--25

°C

Ta=25

°C

1.0

2SD1999

IC / IB=20

°C

--25°

Ta=25

°C

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V

Base-to-Emitter

Saturation Voltage, VBE(sat) -- V Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

2SB1325 / 2SD1999

No.3175-4/4

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