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IXFN 180N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 15 V; ID = 60A, pulse test 9 0 1 3 0 S
Ciss 22000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3800 pF
Crss 600 pF
td(on) 55 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 85 ns
td(off) RG= 1 W (External), 1 8 0 ns
tf56 ns
Qg(on) 660 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 120 nC
Qgd 270 nC
RthJC 0.18 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 1 80 A
ISM Repetitive; 720 A
pulse width limited by TJM
VSD IF = 100A, VGS = 0 V, 1. 2 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = 50A, -di/dt = 100 A/ms, VR = 100 V TJ = 25°C 250 ns
QRM TJ = 25°C 1.5 mC
IRM 10 A
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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