MM Yt gat HIGH VOLTAGE oNeare N CHANNEL JFET Leet GEOMETRY 1143 * High BVDGO 300V - Selections to 400V. High Fansconductance - fo 6mmho TO-39 Package 26 ? Ronkonkoma, N.Y. 11779 MAXIMUM RATINGS 2N5277 1NS277 PARAMETER 2N5278 1N5276 | UNIS Gate Source Votlage 450 450 Vv Gate Drain Voltage 200 150 . VV Drain Source Voliage 450 v Gate Current 40 410 mA Device Dissipation <25C| 0.8 4 WwW Linear Derating Factor 457 5.74 mwrec Storage Range ~55 to 20C} -65 to + 200C . TN5277 & TNS278 2NS277 & 2N5278 ELECTRICAL CHARACTERISTICS AT 25C FREE-AIR TEMPERATURE 2N5277 2N5278 1N5277 1N5276 Gate Reverse Current less VGS = -75V, Vos =0 5 5 5 |nA VG =-75V, Vos = 0, TA= 150C 5 5 5 5 pA Gate Source Breakdown Voltage BV6ss |1G=1.0)A, Vos=0 450 150 Vv Gate Source Breakclown Vollage BVeso |VbpS=0, 1G = 14pA 4150 150 Vv Drain Gate : Breakdown Voltage BVDGO =4yA. Is =0 (see note) 300 300 Vv Saturation Drain Current* {pss Vos = 30V, Ves =0 2.5 | 12.5 | 40 25 |2.5 | 12.5] 40 25 | mA Gate Source Cutoff Voltage Ves (off) |Vbs = 30V, Ib = 40nA 5 7 2 40 55 7 2 10 |V Forward Transconductance ofs Vos = 30V, Ves =0, f= (KHz 2 5 3 6 2 5 3 6 mmho Output Conductance | gos os = 30V, Ves = 0, . f= (KHz 25 60 25 .60 | pmho Input Capacitance Ciss Vos = 30V, V6s= 0, f= IMHz 25 25 3% 30 | pF Feedback Capacitance | Crss bs = 30V, Ves=D, f= {MHz 5 5 5 5 pF NOISE FIGURE NF Vbs = 30V, Ves = OV, f= 4KHz 3 3 3 3 | cB i BW =200Hz, RG = {Ma *Pulse test required, pulse width 300s; duty cycle <3% Note - Special selection available up to 400 V CRYSTALONCS 2805 Veterans Highway, Suite 14