MPSA55
MPSA56
PNP Silicon
Amplifier Transistor
TO-92
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
Features
• Capable of 1.5Watts of Power Dissipation.
• Collector-current 500mA
• Collector-base Voltage 80V
• Operating and storage junction temperature range: -55OC to +150OC
Maximum Ratings
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 80 V
VCBO
Collector-Base Voltage 80 V
VEBO
Emitter-Base Voltage 4.0 V
IC Collector Current Continuous 500 mA
PD Total Device Dissipation @TA=25OC
Derate above 25OC 625
5.0 mW
mW/OC
PD Total Device Dissipation @TA=25OC
Derate above 25OC 1.5
12 W
mW/OC
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage(1)
(IC=1.0mAdc, IB=0) MPSA55
MPSA56 60
80
Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 4.0 Vdc
ICES Collector Cutoff Current
(VCE=60Vdc, IB=0) 0.1 uAdc
ICBO Collector Cutoff Current
(VCB=60Vdc, IE=0) MPSA55
(VCB=80Vdc, IE=0) MPSA56
0.1
0.1 uAdc
ON CHARACTERISTICS (1)
hFE(1) DC Current Gain
(IC=10mAdc, VCE=1.0Vdc) 100
hFE(2) DC Current Gain
(IC=100mAdc, VCE=1.0Vdc) 100
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
0.25
Vdc
VBE(on) Base-Emitter Saturation Voltage
(IC=100mAdc, VCE=1.0Vdc)
1.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current-Gain – Bandwidth Product (3)
(IC=100mAdc, VCE=1.0Vdc,
f=100MHz) MPSA55
MPSA56
50
MHz
1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2.
fT is defined as the frequency at which |hfe| extrapolates to unity.
A
E
B
C
D
G
Pin Configuration
Bottom View CB E
omponents
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