SLVU2.8-8 EPD TVS Diode Array For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. 600 Watts peak pulse power (tp = 8/20s) Transient protection for high speed data lines to The devices are constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. The SLVU2.8-8 features integrated low capacitance compensation diodes that reduce the maximum capacitance to 8pF per line. This, combined with low leakage current, means signal integrity is preserved in high-speed applications such as 10/100 Ethernet. IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) IEC 61000-4-5 (Lightning) 24A (tp = 8/20s) Protects four line pairs (eight lines) Comprehensive pin out for easy board layout Low capacitance High peak pulse current (30A, 8/20s) Low leakage current Low operating and clamping voltages Solid-state EPD TVS process technology Mechanical Characteristics The SLVU2.8-8 is in an SO-8 package and may be used to protect four high-speed line pairs. The layout of the device minimizes trace inductance and reduces voltage overshoot associated with ESD events. The low clamping voltage of the SLVU2.8-8 minimizes the stress on the protected IC. JEDEC SO-8 package Molding compound flammability rating: UL 94V-0 Marking : Part number, date code, logo Packaging : Tape and Reel per EIA 481 Applications The SLV series TVS diodes will meet the surge requirements of IEC 61000-4-2 (ESD), IEC61000-4-5 (Lightning), and ETSI ETS 300 386. Circuit Diagram (Each Line) 10/100 Ethernet WAN/LAN Equipment Switching Systems DSLAMs Desktops, Servers, & Notebooks Instrumentation Base Stations Analog Inputs Schematic & PIN Configuration SO-8 (Top View) Revision 1/18/2008 1 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20s) Pp k 600 Watts Peak Pulse Current (tp = 8/20s) IP P 30 A ESD Per IEC 61000-4-2 (Air) ESD Per IEC 61000-4-2 (Contact) ESD 30 25 kV TJ -55 to +125 C TSTG -55 to +150 C Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) SLVU2.8-8 Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Maximum Units 2.8 V Punch-Through Voltage V PT IPT = 2A 3.0 V Snap-Back Voltage VSB ISB = 50mA 2.8 V Reverse Leakage Current IR VRWM = 2.8V, T=25C (Each Line) Clamping Voltage VC Clamping Voltage 1 A IPP = 1A, tp = 8/20s (Each Line) 4.6 V VC IPP = 24A, tp = 8/20s (Each Line) 15 V Clamping Voltage VC IPP = 30A, tp = 8/20s (Each Line) 17 V Junction Capacitance Cj VR = 0V, f = 1MHz (Each Line) 8 pF 2008 Semtech Corp. 2 .100 www.semtech.com SLVU2.8-8 PRELIMINARY PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 10 100 % of Rated Power or IPP Peak Pulse Power - PPP (kW) 90 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0 0.1 1 10 100 25 1000 Pulse Waveform e 60 Clamping Voltage Vc - (V) Percent of IPP 70 -t 50 40 125 150 16 Waveform Parameters: tr = 8s td = 20s 80 100 Clamping Voltage vs. Peak Pulse Current 110 90 75 o Pulse Duration - tp (s) 100 50 Ambient Temperature - TA ( C) td = IPP/2 30 20 12 8 Waveform Parameters: tr = 8s td = 20s 4 10 0 0 0 5 10 15 20 25 30 0 5 10 Time (s) 15 20 25 30 35 Peak Pulse Current Ipp - (A) Normalized Capacitance vs. Reverse Voltage Insertion Loss S21 CH1 1.4 S21 LOG 10 dB/ REF 0 dB C J(VR) / C J(VR=0) 1.2 1 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 0.5 1 1.5 2 2.5 3 Reverse Voltage - VR (V) START 2008 Semtech Corp. 3 .030 000 MHz STOP 3 000. 000 000 MHz www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Applications Information SLVU2.8-8 Circuit Diagram Device Connection for Protection of Eight Data Lines Electronic equipment is susceptible to transient disturbances from a variety of sources including: ESD to an open connector or interface, direct or nearby lightning strikes to cables and wires, and charged cables "hot plugged" into I/O ports. The SLVU2.8-8 is designed to protect sensitive components from damage and latchup which may result from such transient events. The SLVU2.8-8 can be configured to protect four highspeed line pairs differentially, or four lines to ground (common mode). The device is connected as follows: 1 . Differential Protection of four line pairs: Line pairs are connected at pins 1 and 2, 3 and 4, 5 and 6, and 7 and 8. Circuit Board Layout Recommendations for Suppression of ESD. Differential Protection of Four Line Pairs Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: z Place the device near the input terminals or connectors to restrict transient coupling. z Minimize the path length between the TVS and the protected line. z Minimize all conductive loops including power and ground loops. z The ESD transient return path to ground should be kept as short as possible. z Never run critical signals near board edges. z Use ground planes whenever possible. 2008 Semtech Corp. From Connector 4 1 8 2 7 3 6 4 5 www.semtech.com SLVU2.8-8 PRELIMINARY PROTECTION PRODUCTS Typical Applications One SLVU2.8.8 Protecting Two 10/100 Ethernet Port 2008 Semtech Corp. 5 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Applications Information (continued) EPD TVSTM Characteristics IPP The SLVU2.8-8 is constructed using Semtech's proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the SLVU2.8-8 can effectively operate at 2.8V while maintaining excellent electrical characteristics. ISB IPT VBRR IR VRWM VSB VPT VC IBRR The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will "punch-through" to a conducting state. This structure results in a device with superior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents. EPD TVS VI Characteristic Curve The IV characteristic curve of the EPD device is shown in Figure 1. The device represents a high impedance to the circuit up to the working voltage (VRWM). During a transient event, the device will begin to conduct as it is biased in the reverse direction. When the punchthrough voltage (VPT) is exceeded, the device enters a low impedance state, diverting the transient current away from the protected circuit. When the device is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristic due to its structure. This must be considered when connecting the device to a power supply rail. To return to a non-conducting state, the current through the device must fall below the snap-back current (approximately < 50mA). 2008 Semtech Corp. 6 www.semtech.com SLVU2.8-8 PRELIMINARY PROTECTION PRODUCTS Applications Information - SPICE Model 0.8 nH SLVU2.8-8 Spice Model SLVU2.8-8 Spice Parameters 2008 Semtech Corp. Parameter Unit D1 (T VS) D2 (LCR D) IS Amp 6.09E-14 8.57E-9 BV Volt 3.4 420 VJ Volt 13.8 0.62 RS Ohm 0.389 0.15 IB V Amp 10E-3 10E-3 CJO Farad 24.75E-12 3.15E-12 TT sec 2.541E-9 2.541E-9 M -- 0.145 0.113 N -- 1.1 1.1 EG eV 1.11 1.11 7 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Outline Drawing - SO-8 A h D e N h H 2X E/2 E1 E 1 0.25 L (L1) e/2 DETAIL B 01 A D aaa C SEATING PLANE A2 A C SEE DETAIL A .053 .069 .010 .004 .065 .049 .012 .020 .010 .007 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 8 0 .004 .010 .008 1.35 1.75 0.10 0.25 1.25 1.65 0.31 0.51 0.17 0.25 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 0 8 0.10 0.25 0.20 SIDE VIEW A1 bxN bbb DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc c GAGE PLANE 2 ccc C 2X N/2 TIPS DIM C A-B D NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. Land Pattern - SO-8 X DIM (C) G C G P X Y Z Z Y DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. 2008 Semtech Corp. 8 www.semtech.com SLVU2.8-8 PRELIMINARY PROTECTION PRODUCTS Marking SC YYWW SLVU2.8 -8 1 Top View Note: (1) yyww = Date Code Ordering Information Part Number Working Voltage Qty/Pkg R eel Size SLVU2.8-8.TB 2.8V 500/Reel 7 Inch 2.8V 500/Reel 7 Inch 2.8V 98/Tube N /A 2.8V 98/Tube N /A SLVU2.8-8.TBT (1) SLVU2.8-8 SLVU2.8-8.T (1) Note: (1) Lead-Free Product Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2008 Semtech Corp. 9 www.semtech.com