APT8030B2VFR 27A 0.300 800V POWER MOS V (R) FREDFET T-MAXTM Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Fast Recovery Body Diode * 100% Avalanche Tested * Lower Leakage * New T-MAXTM Package D FREDFET (Clip-mounted TO-247 Package) G * Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT8030B2VFR UNIT 800 Volts Drain-Source Voltage 27 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 520 Watts Linear Derating Factor 4.16 W/C VGSM PD TJ,TSTG 108 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 27 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) 800 Volts 27 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.300 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5623 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT8030B2VFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 6600 7900 Coss Output Capacitance VDS = 25V 645 900 Crss Reverse Transfer Capacitance f = 1 MHz 320 480 Qg Total Gate Charge VGS = 10V 340 510 Qgs Gate-Source Charge VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 31 170 47 250 VGS = 15V 16 32 Qgd 3 Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 14 28 ID = ID [Cont.] @ 25C 59 90 RG = 0.6 8 16 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol 27 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Peak Diode Recovery dt dv/ 108 (Body Diode) dt (VGS = 0V, IS = -ID [Cont.]) 6 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 300 Tj = 125C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 2.0 Tj = 125C 6.7 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 13 Tj = 125C 22 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP MAX 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 VR = 200V. D=0.5 0.1 0.2 0.1 0.05 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5623 Rev A 0.3 0.01 0.02 0.005 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 C/W 4 Starting T = +25C, L = 6.86mH, R = 25, Peak I = 27A j G L 5 These dimensions are equal to the TO-247 without mounting hole 6 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.05 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT8030B2VFR 50 50 40 5V 30 20 4.5V 10 VGS=15V ID, DRAIN CURRENT (AMPERES) VGS=10V 40 VGS=5.5V, 6V & 7V 30 20 4.5V 10 4V 4V 0 0 ID, DRAIN CURRENT (AMPERES) TJ = -55C TJ = +25C 80 TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125C 20 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 0 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 1.4 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 5V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5623 Rev A ID, DRAIN CURRENT (AMPERES) VGS=5.5V, 6V, 7V, 10V & 15V APT8030B2VFR 200 30,000 10S OPERATION HERE LIMITED BY RDS (ON) 50 100S 10,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 1mS 10 5 10mS 100mS 1 TC =+25C TJ =+150C SINGLE PULSE .5 DC IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) D VDS=100V VDS=250V VDS=400V 12 8 4 0 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE I = I [Cont.] 16 Coss 1,000 100 1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 5,000 Crss .1 20 Ciss 0 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 50 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE T-MAXTM Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 5 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) Gate Drain 1.01 (.040) 1.40 (.055) Source 050-5623 Rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058