KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6 KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6 Silicon-Press-Fit-Diodes - High Temperature Diodes Silizium-Einpress-Dioden - Hochtemperatur-Dioden Version 2006-04-22 Nominal Current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 6.60.5 16 4 O 16 50 ... 600 V Metal press-fit case with glass seal Metall-Einpressgehause mit Glas-Durchfuhrung 1.50.5 Weight approx. - Gewicht ca. O 12.770.04 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Dimensions - Mae [mm] Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stospitzensperrspannung VRSM [V] Anode Cathode KYZ35A05 KYZ35K05 50 60 KYZ35A1 KYZ35K1 100 120 KYZ35A2 KYZ35K2 200 240 KYZ35A3 KYZ35K3 300 360 KYZ35A4 KYZ35K4 400 480 KYZ35A6 KYZ35K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100C IFAV 35 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 130 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle TA = 25C IFSM 360/400 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25C i2t 660 A2s Tj TS -50...+175C -50...+175C Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 Max. case temperature TC = 150C - Max. Gehausetemperatur TC = 150C (c) Diotec Semiconductor AG http://www.diotec.com/ 1 KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6 Characteristics Kennwerte Forward Voltage Durchlass-Spannung Tj = 25C IF = 35 A VF < 1.1 V Leakage Current Sperrstrom Tj = 25C VR = VRRM IR < 100 A RthC < 0.8 K/W Thermal Resistance Junction - Case Warmewiderstand Sperrschicht - Gehause 120 3 10 [%] [A] 100 Tj = 125C 2 10 80 Tj = 25C 10 60 40 1 20 IF IFAV 360a-(35a-1,1v) -1 10 0 0 TC 100 50 150 [C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehausetemp. 0.4 VF 0.8 1.0 1.4 1.2 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 3 10 [A] 102 iF 10 1 (c) Diotec Semiconductor AG 2 3 10 10 [n] 10 Peak forward surge current versus number of cycles at 50 Hz Durchla-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz http://www.diotec.com/ 2