SILICON PLANAR PNP LOW NOISE, LOW LEVEL AMPLIFIERS The 2N 3962, 2N 3964 and 2N 3965 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case particularly intended for use in low noise applications. They features are excellent current gain linearity from 1 UA to 50 mA. ABSOLUTE MAXIMUM RATINGS 2N 3962 2N 3964 | 2N 3965 Veso Collector-base voltage (!_= 0) -45V | -60 V Collector-emitter voltage (I, = 0) 45 V -60 V cEO ge ile VeBo Emitter-base voltage (I-= 0) eV c Collector current -200 mA Prot Total power dissipation at Tamp & 25C 0.36 W at Tease < 25C 1.2 W T stg Tj Storage and junction temperature -65 to 200 C MECHANICAL DATA Dimensions in mm aS Collector : 207 7/76 THERMAL DATA Rth j-case Thermal resistance junction-case max 146 C/W Rth ;amp Thermal resistance junction-ambient max 487 C/W ELECTRICAL CHARACTERISTICS (T, m= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.} Unit lees Collector cutoff for 2N 3964 current (Vge= 0) Vce= -40V -10| nA VceE=-40V Tamp= 150C -10; pA for 2N 3962 and 2N 3965 Vce= -50V -10} nA Vee=-50V Tamp= 150C ~10} BA lego Emitter cutoff Vep= -4V -10; nA current (c= 0) Viarycpo Collector-base le=-10 NA reakdown voltage for 2N 3964 -45 Vv (le= 0) for 2N 3962 and 2N 3965 -60 Vv Visrjyces Collector-emitter Ic=-10 "A breakdown voltage for 2N 3964 ~45 Vv (Vee= 0) for 2N 3962 and 2N 3965 -60 Vv V ceo (sus) Collector-emitter IlG=-5 mA sustaining voltage for 2N 3964 -45 Vv (Ip = 0) for 2N 3962 and 2N 3965 -60 Vv VieryEBO Emitter--base le= -10 LA -6 Vv breakdown voltage (te= 0) Vee gat) Collector-emitter Ic=-10mA Ig=-0.5mA -0.25} V saturation voltage lc=-50mA Ig=-5mA -0.4) V Vee (sat) Base-emitter le=-10mA_ Ig=-0.5mA -0.9;) V saturation voltage fe=-50mA Ig=-5mA -0.95| V hee DC current gain for 2N 3962 Ic=-1 UA Vce=-bV 60 tle=-10MA Voe=-5V 100 300] Ile=-100BLA Voe=-5V 100 - Ic=-1mA Vee= -5V 100 450} Ic=-10mMA Vee=-5V 100 - Ic=-50mA Vee=-5V 90 - Ilc=-i0NYA Vee=-5V Tamp = -85C 40 - 298 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.] Unit hee DC current gain for 2N 3962 le=-50mA Vee= -5V Tamp= -85C 45 lo -1 mn Vce= -5V 00 600] far'BN 3964 and 2N 3965 Io= ~1 LA Vce= -5V 180 _ le=-104NA VeR= -5V 250 500} [e=-100UA Vcoe= -5V 250 _ Ie=-1 mA Vce= -5V 250 600] Ie=-10mMA Vee=-5V 200 _ 1e=-50mMA VcE= -5V 180 - lc=-10NA Vcoe=-5V Tamp= ~b8C 100 - IG=-50mA Vee= -5V Tamp= -55C 90 _ Ic=-1mA Voe=-5V Tamp= 100C 800) hee Small signal current lo=-1mMA Vee =-5V current gain f=1kHz for 2N 3962 100 550; for 2N 3964 and 2N 3965 250 700) f+ Transition frequency le=-0.5mA Vee= -5V f= 20 MHz for 2N 3962 40 160 | MHz for 2N 3964 and 2N 3965 50 160 |MHz CEeBo Emitter-base Ie =0 Ves= -0.5V Capacitance = 1 MHz 15| pF Cceo Collector-base 1p=0- Vep= -5V capacitance f= 1 MHz 6| pF NF Noise figure le=-20UA Vee=-5V g 10 k2 for 2N 3962 f= 10 to 10 000 Hz 3/ dB f= 100 Hz B= 15 Hz 10| dB f= 1 kHz B= 150 Hz 3| dB = 10 kHz B= 1.5 kHz 3] dB for 2N 3964 and 2N 3965 f = 10 to 10 000 Hz 2| dB f= 10 Hz B=2H 8| dB f= 100 Hz B= 15 Hz 4| dB f= 1 kHz B= 150 Hz 2| dB f= 10 kHz B= 1.5 kHz 2; dB 299 BEE ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.| Unit hie Input impedance Ic=-1mA Vce= -5V f= 1 kHz for 2N 3962 2.5 17| ka for 2N 3964 and 2N 3965 6 20] ka re Reverse valtage ratio Ic=-1mA Vce= -5V = 1kHz 10x104) Hoe Output admittance Ie=-1mA Vce= -5V f= 1 kHz for 2N 3962 5 40} us for 2N 3964 and 2N 3965 5 50} us * Pulsed: pulse duration = 300 ws, duty cycle = 1% 300