1
1 G : Gate
2 S1 : Source1
3 S2 : Source2
4 D : Drain
FUJI POWER MOS FET
Fig.1
Ｐ矢視図参照
Fig.1
Ｐ矢視図
Note:1. Dimension shown in ( ) is
reference values.
注）１.（ ）内寸法は参考値とする。
Special
specification
for customer
Trademark
Lot No.
Type name
ロットNo.
D
S2
G
S1
MARKING
OUT VIEW
外形寸法図
DIMENSIONS ARE IN MILLIMETERS.
MARKING
表示内容
CONNECTION
結線図
商標
特殊品記号
形名
表示内容
1 G : Gate
2 S1 : Source1
3 S2 : Source2
4 D : Drain
Item Symbol Ratings Unit
Drain-source voltage V DS 100
VDSX *5 70
Continuous drain current ID±50
±6.9 **
Pulsed drain current ID(puls] ±200
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 50
Maximum Avalanche Energy EAS *1 465
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Tc=25°C 123
Ta=25°C 2.4
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3589-01
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V
ID=25A VGS=10V
ID=25A VDS=25V
VCC=48V ID=25A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance 0.93
87.0
52.0
°C/W
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=50V
ID=50A
VGS=10V
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
100
3.0 5.0
25
250
10 100
19 25
19 25
1830 2745
460 690
38 57
20 30
35 53
50 75
23 35
52 78
16 24
18 27
50 1.10 1.65
0.1
0.4
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
*1 L=223µH, Vcc=48V *2 Tch 150°C
=
<
*4 VDS 100V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
Tc=25°C
Ta=25°C
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Rth(ch-a) ** channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
G : Gate
S2 : Source
D : Drain
S1 : Source
2
Characteristics
2SK3589-01 FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
0 25 50 75 100 125 150
0
100
200
300
400
500
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A
024681012
0
40
80
120
160
200 20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 25 50 75 100 125 150
0
1
2
3
4
5Surface mounted on
1000mm2,t=1.6mm FR-4 PCB
(Drain pad area : 500mm2)
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
3
2SK3589-01 FUJI POWER MOSFET
VGS=f(Qg):ID=50A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
-50 -25 0 25 50 75 100 125 150
0
10
20
30
40
50
60
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
VGS(th) [V]
Tch [°C]
µA
0 20406080
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 50V
10-1 100101102
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0 40 80 120 160 200
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
4
2SK3589-01 FUJI POWER MOSFET
IAV=f(tAV):starting Tch=25°C. Vcc=48V
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
0 1000 2000 3000 4000 5000
0
10
20
30
40
50
60
70
80
90
100
Rth(ch-a) [°C/W]
Drain Pad Area [mm 2]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
