Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 22*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 16
IDM Pulsed Drain Current ➀88
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁200 mJ
IAR Avalanche Current ➀16 A
EAR Repetitive Avalanche Energy ➀7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂4.1 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5 s)
Weight 1.0 g
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
oC
A
7/13/01
www.irf.com 1
100V, N-CHANNEL
SMD-0.5
Product Summary
Part Number BVDSS RDS(on) ID
IRF5NJ540 100V 0.052Ω 22A*
Features:
nLow RDS(on)
nAvalanche Energy Ratings
nDynamic dv/dt Rating
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nLight Weight
For footnotes refer to the last page
* Current is limited by package
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-0.5) IRF5NJ540
PD - 94020A
IRF5NJ540
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 1.67 °C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 22*
ISM Pulse Source Current (Body Diode) ➀—— 88
VSD Diode Forward Voltage — — 1.3 V Tj = 25°C, IS = 16A, VGS = 0V ➃
trr Reverse Recovery Time — — 240 nS Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 1.67 µCV
DD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 250µA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.052 ΩVGS = 10V, ID = 16A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 11 — — S ( )V
DS = 50V, IDS = 16A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS = 100V ,VGS=0V
— — 250 VDS = 80V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 104 VGS =10V, ID = 16A
Qgs Gate-to-Source Charge — — 20 nC VDS = 80V
Qgd Gate-to-Drain (‘Miller’) Charge — — 43
td(on) Turn-On Delay Time — — 24 VDD = 50V, ID = 16A,
trRise Time — — 125 VGS =10V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 86
tfFall Time — — 82
LS + LDTotal Inductance — 4.0 — Measured from the center of
drain pad to center of source pad
Ciss Input Capacitance — 1487 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 353 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 182 —
nA
Ω
➃
nH
ns
µA
* Current is limited by package
www.irf.com 3
IRF5NJ540
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J°
T = 25 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
22A
IRF5NJ540
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
2500
3000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
020 40 60 80 100 120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
16A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
www.irf.com 5
IRF5NJ540
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
5
10
15
20
25
30
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
VGS
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF5NJ540
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
7.2A
10A
16A
VGS
www.irf.com 7
IRF5NJ540
Footnotes:
Case Outline and Dimensions — SMD-0.5
P AD ASSIGNMENTS
Repetitive Rating; Pulse width limited by
maximum junction temperature.
ISD ≤ 16A, di/dt ≤ 350 A/µs,
VDD ≤ 100V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD = 25 V, Starting TJ = 25°C, L=1.5mH
Peak IAS =16A, VGS = 10 V, RG= 25Ω
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
