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PRELIMINARY DATA
May 2000
PD55015 - PD55015S
RF POWER TRANSISTORS
The
LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
•EXCELLENT THERMAL STABILITY
•COMMON SOURCE CONFIGURATION
•POUT = 15 W with 13.5 dB gain @ 500 MHz /
12.5V
•NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55015 is acommon source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12V in common source mode at frequencies of
up to 1GHz. PD55015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55015’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
XPD55015
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD55015
PD55015S XPD55015S
ABSOLUTE MAXIMUM RATINGS(TCASE =25O
C)
Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
IDDrain Current 5 A
PDISS Power Dissipation (@ Tc = 70 0C) 73 W
TjMax. Operating Junction Temperature 165 0C
TSTG Storage Temperature -65 to 165 0C
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance 1.3 0C/W
PD55015 - PD55015S
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PD55015S
Frequency
MHz Zin
ΩZdl
Ω
480 1.43 - j1.27 1.47 + j.65
500 1.62 - j1.05 1.49 + j.58
520 1.57 - j.91 1.35 +j.36
PIN CONNECTION
SOURCE
DRAINGATE
SC15200
ELECTRICAL SPECIFICATION(TCASE =250
C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
IDSS VGS =0V V
DS =28V 1µA
I
GSS VGS =20V V
DS =0V 1µA
V
GS(Q) VDS =10V I
D= 150 mA 2.0 5.0 V
VDS(ON) VGS =10V I
D= 2.5 A 0.8 V
gFS VDS =10V I
D= 2.5 A 2.0 2.5 mho
CISS VGS =0V V
DS = 12.5 V f = 1 MHz 89 pF
COSS VGS =0V V
DS = 12.5 V f = 1 MHz 60 pF
CRSS VGS =0V V
DS = 12.5 V f = 1 MHz 6.5 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
POUT f = 500 MHz VDD = 12.5 V IDQ =150mA 15 W
GPS f = 500 MHz VDD = 12.5 V POUT =15W I
DQ =150mA 13.5 dB
ηDf = 500 MHz VDD = 12.5 V POUT =15W I
DQ =150mA 50 %
LOAD
Mismatch f = 500 MHz VDD = 15.5 V POUT =15W I
DQ =150mA
ALL PHASE ANGLES 20:1 VSWR
PD55015
Frequency
MHz Zin
ΩZdl
Ω
480 2.13 - j1.09 1.55 + j.34
500 1.95 - j.31 1.63 - j.25
520 1.83 - j.70 1.43 + j.30
D
S
Typical Input
Impedance
Zin
G
ZDL
Typical Drain
Load Impedance
SC13140
IMPEDANCE DATA
3/10
PD55015 - PD55015S
Capacitance vs. Drain Voltage
0 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
f=1MHz
Drain Current vs. Gate Voltage
2.5 3 3.5 4 4.5 5
Vgs, GATE-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
Id, DRAIN CURRENT (A)
VDS=10V
Gate-Source Volatge vs. Case Temperature
-25 0 25 50 75
Tc, CASE TEMPERATURE (°C)
0.96
0.98
1
1.02
1.04
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
ID=.25A
ID=1A
ID=1.5A
ID=2A
I
D=3A
V
DS=10V
TYPICAL PERFORMANCE
PD55015 - PD55015S
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Output Power vs. Input Power
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
16
18
Pout, OUTPUT POWER (W)
VDD=12.5V
IDQ=150mA
480MHz
500MHz
520MHz
Power Gain vs. Output Power
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
8
10
12
14
16
18
Gp, POWER GAIN (dB)
VDD =12.5V
IDQ =150mA
480MHz
500MHz
520MHz
Drain Efficiency vs. Output Power
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
VDD=12.5V
IDQ=150mA
480MHz
500MHz
520MHz
Return Loss vs. Output Power
024681012141618
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, RETURN LOSS (dB)
VDD=12.5V
IDQ =150mA
480MHz
500MHz
520MHz
Output Power vs. Bias Current
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
8
10
12
14
16
18
20
Pout, OUTPUT POWER (W)
VDD =12.5V
Pin=0.8W
480MHz
500MHz
520MHz
Drain Efficiency vs. Bias Current
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
VDD=12.5V
Pin=0.8W
480MHz
500MHz
520MHz
TYPICAL PERFORMANCE PD55015
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PD55015 - PD55015S
0 0.2 0.4 0.6 0.8 1 1.2
Pin, INPUT POWER (W)
0
2
4
6
8
10
12
14
16
18
Pout, OUTPUT POWER (W)
VDD =12.5V
IDQ=150mA
480MHz
500MHz
520MHz
024681012141618
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
VDD=12.5V
IDQ =150mA
480 MHz
500 MHz
520MHz
Output Power vs. Input Power
Output Power vs. Drain Voltage
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10
15
20
25
Pout, OUTPUT POWER (W)
Idq=150mA
Pin=0.8W
480MHz
500MHz
520MHz
Drain Efficency vs. Drain Voltage
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
Idq=150mA
Pin=0.8W
480MHz
500MHz
520MHz
Output Power vs. Gate Bias Voltage
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE BIAS VOLTAGE (V)
0
5
10
15
20
Pout, OUTPUT POWER (W)
VDD=12.5V
Pin=0.8W
480MHz
500MHz
520MHz
TYPICAL PERFORMANCE
Power Gain vs. Output Power
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
8
10
12
14
16
18
Gp, POWER GAIN (dB)
VDD=12.5V
IDQ =150mA
480MHz
500MHz
520MHz
Drain Efficiency vs. Output Power
PD55015S
PD55015 - PD55015S
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Return Loss vs. Output Power
024681012141618
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl, RETURN LOSS (dB)
VDD =12.5V
IDQ =150mA
480MHz
500MHz
520MHz
520MHz
Output Power vs. Bias Current
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
8
10
12
14
16
18
20
Pout, OUTPUT POWER (W)
VDD=12.5V
Pin=0.5 W
480MHz
500MHz
520MHz
Drain Efficiency vs. Bias Current
0 200 400 600 800 1000
Idq, BIAS CURRENT (mA)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
VDD =12.5V
Pin=0.5W
480MHz
500MHz
520MHz
Output Power vs. Drain Voltage
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10
15
20
25
Pout, OUTPUT POWER (W)
Idq=150mA
Pin=0.5W
480MHz
500MHz
520MHz
Drain Efficency vs. Drain Voltage
7 8 9 10 11 12 13 14 15 16 17
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
60
70
Nd, DRAIN EFFICIENCY (%)
Idq=150mA
Pin=0.5W
480MHz 500MHz
520MHz
Output Power vs. Gate Bias Voltage
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE BIAS VOLTAGE (V)
0
5
10
15
20
Pout, OUTPUT POWER (W)
VDD=12.5V
Pin=0.5W
480MHz
500MHz
520MHz
TYPICAL PERFORMANCE
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PD55015 - PD55015S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2 FERRITE BEAD R2 1k
Ω, 1W CHIP RESISTOR
C1,C12 300pF, 100 mil CHIP CAPACITOR R3 33 kΩ, 1W CHIP RESISTOR
C2,C3,C4,C11,
C12,C13 1 TO 20 pF TRIMMER CAPACITOR Z1 0.471” X 0.080” MICROSTRIP
C6,C18 pF 100 mil CHIP CAP Z2 1.082” X 0.080” MICROSTRIP
C9,C15 10µF,50V ELECTROLYTIC
CAPACITOR Z3 0.372” X 0.080” MICROSTRIP
C8,C16 0.1mF, 100 mil CHIP CAP Z4,Z5 0.260” X 0.223” MICROSTRIP
C7,C17 1,000pF 100 mil CHIP CAP Z6 0.050” X 0.080” MICROSTRIP
C5, C10 33pF, 100 mil CHIP CAP Z7 0.551” X 0.080” MICROSTRIP
L1 56nH, 7 TURN, COILCRAFT Z8 0.825” X 0.080” MICROSTRIP
N1,N2 TYPE N FLANGE MOUNT Z9 0.489” X 0.080” MICROSTRIP
R1 15 Ω, 1W CHIP RESISTOR BOARD ROGER, ULTRA LAM 2000
THK 0.030” εr=2.55
2oz ED Cu 2 SIDES
PD55015 - PD55015S
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TEST CIRCUIT
6.4 inches
4inches
TEST CIRCUITTEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
9/10
PD55015 - PD55015S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
PD55015 - PD55015S
10/10
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of use of such information nor for any infringement of patents or otherrights ofthird partieswhich may resultfrom its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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