AP2311GN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Small Package Outline BVDSS -60V RDS(ON) 250m ID Surface Mount Device - 1.8A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S The SOT-23 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units - 60 V +20 V 3 - 1.8 A 3 - 1.4 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -10 A PD@TA=25 Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 /W 1 200811263 AP2311GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -60 - - V - -0.04 - V/ VGS=-10V, ID=-1.8A - 200 250 m VGS=-4.5V, ID=-1.4A - 240 300 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-1A - 2 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=70 C) VDS=-48V, VGS=0V - - -25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=-1A - 6 10 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC VDS=-30V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 22 - ns tf Fall Time RD=30 - 3 - ns Ciss Input Capacitance VGS=0V - 510 810 pF Coss Output Capacitance VDS=-25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 6.4 9.6 Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V IS=-1A, VGS=0V, - 30 - ns dI/dt=100A/s - 38 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 270 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2311GN-HF 10 10 -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) T A =25 C 7.5 V G = -3.0V 5 8 5 V G = - 3 .0V 3 2.5 0 0 0 1 2 3 4 5 0 6 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 250 I D =-1.4A I D =-1.8A V G =-10V T A =25 o C 240 Normalized RDS(ON) 1.6 RDS(ON) (m ) -10V -7.0V -5.0V -4.5V T A = 150 o C -ID , Drain Current (A) o 230 220 1.2 0.8 210 0.4 200 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.5 Normalized -VGS(th) (V) 1.5 o o T j =25 C T j =150 C -IS(A) 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) 1.0 0.5 1.3 1.0 0.8 0.0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. 3 AP2311GN-HF f=1.0MHz 1000 I D = -1 A V DS = - 48 V 10 C iss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 100 C oss 4 C rss 2 0 10 0 2 4 6 8 10 12 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 -ID (A) 100us 1 1ms 0.1 10ms 100ms 1s DC 0.01 o T A =25 C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270/W 0.001 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 VG V DS =-5V -ID , Drain Current (A) 8 T j =25 o C QG T j =150 o C -4.5V 6 QGS QGD 4 2 Charge Q 0 0 1 2 3 4 5 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-23 D Millimeters SYMBOLS D1 E1 E e MIN NOM MAX A 1.00 1.15 1.30 A1 0.00 -- 0.10 A2 0.10 0.15 0.25 D1 0.30 0.40 0.50 e 1.70 2.00 2.30 D 2.70 2.90 3.10 E 2.40 2.65 3.00 E1 1.40 1.50 1.60 1.All Dimension Are In Millimeters. A 2.Dimension Does Not Include Mold Protrusions. A2 A1 Part Marking Information & Packing : SOT-23 Laser Marking Part Number : NG If second letter has underline : HF & Rohs product If second letter has not underline : Rohs product NGSS Date Code : SS:2004,2008,2012... SS:2003,2007,2011... SS:2002,2006,2010... SS:2001,2005,2009... "A~Z" showed on 3rd position --> week 1 ~ week 26, "A~Z" showed on 4th position --> week 27 ~ week 52. 5