LS4148/LS4448
Document Number 85561
Rev. 1.8, 04-May-07
Vishay Semiconductors
www.vishay.com
1
9612009
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the devices
1N4148 and 1N4448 respectively
• Quadro Melf package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Extremely fast switches
Mechanical Data
Case: QuadroMELF Glass case (SOD80)
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Type Marking Remarks
LS4148 VF = max. 1000 mV at IF = 50 mA LS4148-GS18 or LS4148-GS08 - Tape and Reel
LS4448 VF = max. 1000 mV at IF = 100 mA LS4448-GS18 or LS4448-GS08 - Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 100 V
Reverse voltage VR75 V
Peak forward surge current tp = 1 µs IFSM 2A
Repetitive peak forward current IFRM 500 mA
Forward continuous current IF300 mA
Average forward current VR = 0 IFAV 150 mA
Power dissipation Ptot 500 mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
on PC board
50 mm x 50 mm x 1.6mm
RthJA 500 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
e2
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Document Number 85561
Rev. 1.8, 04-May-07
LS4148/LS4448
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 5 mA LS4448 VF620 720 mV
IF = 50 mA LS4148 VF860 1000 mV
IF = 100 mA LS4448 VF930 1000 mV
Reverse current VR = 20 V IR25 nA
VR = 20 V, Tj = 150 °C IR50 µA
VR = 75 V IR5µA
Breakdown voltage IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR) 100 V
Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD4pF
Rectification efficiency VHF = 2 V, f = 100 MHz ηr45 %
Reverse recovery time IF = IR = 10 mA, iR = 1 mA trr 8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr 4ns
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
0 0.4 0.81.2 1.6
0.1
1
10
100
1000
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
2.0
16640
LS4148
T
j
= 25 °C
Scattering Limit
LS4448
T
j
= 25 °C
Scattering Limit
0 0.4 0.81.2 1.6
0.1
1
10
100
1000
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
2.0
16642
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
IR- Reverse Current (nA)
VR- Reverse Voltage (V)
10 1 100
94 9098
Tj = 25 °C
Scattering Limit
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
CD - Diode Capacitance (pF)
100
94 9099
2.5
VR - Reverse Voltage (V)
f = 1 MHz
Tj = 25 °C
LS4148/LS4448
Document Number 85561
Rev. 1.8, 04-May-07
Vishay Semiconductors
www.vishay.com
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Package Dimensions in millimeters (inches): Quadro MELF SOD80
96 12071
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Document Number 85561
Rev. 1.8, 04-May-07
LS4148/LS4448
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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