VS-ST730CL Series
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Phase Control Thyristors
(Hockey PUK Version), 990 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case B-PUK (TO-200AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
IT(AV) 990 A
VDRM/VRRM 800 V, 1200 V, 1400 V, 1600 V,
1800 V, 2000 V
VTM 1.62 V
IGT 100 mA
TJ-40 °C to +125 °C
Package B-PUK (TO-200AC)
Circuit configuration Single SCR
B-PUK (TO-200AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
990 A
Ths 55 °C
IT(RMS)
2000 A
Ths 25 °C
ITSM
50 Hz 17 800 A
60 Hz 18 700
I2t50 Hz 1591 kA2s
60 Hz 1452
VDRM/VRRM 800 to 2000 V
tqTypical 150 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST730CL
08 800 900
80
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
VS-ST730CL Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
990 (375) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 2000
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
17 800
t = 8.3 ms 18 700
t = 10 ms 100 % VRRM
reapplied
15 000
t = 8.3 ms 15 700
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1591
kA2s
t = 8.3 ms 1452
t = 10 ms 100 % VRRM
reapplied
1125
t = 8.3 ms 1027
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 15 910 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.98 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.12
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.32 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.27
Maximum on-state voltage VTM Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tqITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA
VS-ST730CL Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
Typ. Max.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 2.5 -
V
TJ = 25 °C 1.8 3.0
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.073
K/W
DC operation double side cooled 0.031
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet B-PUK (TO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.010 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
VS-ST730CL Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 100200300400500600700
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 3 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
020040060080010001200
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduc tion Period
Maximum Allowable Heatsink Temperature (°C)
ST730C..L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
30° 60° 90° 120° 180°
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 3 0 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000 2400
DC
30°
60°
90°
120°180°
Avera g e On-st a te Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST7 3 0 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
500
1000
1500
2000
2500
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30° RM S Li m i t
Conduc tion Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST730C..L Series
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 400 800 1200 1600 2000 2400
DC
180°
120°
90°
60°
30°
RM S Lim i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-sta te Current (A)
ST730C..L Series
T = 1 2 5 ° C
J
VS-ST730CL Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Ha lf Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST7 3 0 C . . L Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
0.01 0.1 1
Pulse Train Duration (s)
Ve rsus Pulse Train Dura t ion. Contro l
Peak Half Sine Wave On-state Current (A)
Init ial T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST7 3 0 C . . L Se r i e s
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST7 3 0 C . . L Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Steady State Value
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST7 3 0 C . . L Se r i e s
Transient Thermal Impedance Z (K/W)
VS-ST730CL Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2) (3)
Instantaneous Gate Current (A)
In st a n t a n e o u s G a t e V o lt a g e ( V )
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ d t : 10V, 10ohms
Fre q u e n c y Lim it e d b y PG ( A V )
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Device: ST730C..L Series
(4)
- Thyristor
2
- Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- L = PUK case B-PUK (TO-200AC)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
9
8
- Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
Device code
51 32 4 6 7 8 9
STVS- 73 0 C 20 L 1 -
1- Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95076
Outline Dimensions
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B-PUK (TO-200AC)
DIMENSIONS in millimeters (inches)
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
2 places
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
36.5 (1.44)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
C
A
Note:
A = Anode
C = Cathode
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