MBR3030PT thru MBR3045PT
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125 C
IFSM
Maximum Ratings
30
200
A
A
Unit
o
Maximum Forward
Voltage (Note 1)
IF=20A @TJ=25 C
IF=20A @TJ=125 C
IF=30A @TJ=25 C
IF=30A @TJ=125 C
VF
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=125 C
CJTypical Junction Capacitance Per Element (Note 3)
TJOperating Temperature Range
-
0.60
0.76
0.72
1
60
1.4
500
-55 to +150
-55 to +175
V
mA
pF
o
o
o
o
o
Typical Thermal Resistance (Note 2)ROJC C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
o
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
MBR3030PT
MBR3035PT
MBR3040PT
MBR3045PT
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
A=Anode, C=Cathode, TAB=Cathode
A
AC
C(TAB)
A C A Dimensions TO-247AD Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
MBR3030PT thru MBR3045PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
