IRFP064V
HEXFET® Power MOSFET
3/30/01
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.60
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
www.irf.com 1
VDSS = 60V
RDS(on) = 5.5mΩ
ID = 130A
S
D
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lOptimized for SMPS Applications
Description
PD - 94112
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 95 A
IDM Pulsed Drain Current 520
PD @TC = 25°C Power Dissipation 250 W
Linear Derating Factor 1.7 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current130 A
EAR Repetitive Avalanche Energy25 mJ
dv/dt Peak Diode Recovery dv/dt 4.7 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
TO-247AC
IRFP064V
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 130A, VGS = 0V
trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 130A
Qrr Reverse Recovery Charge ––– 360 540 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
130
520 A
Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 130A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 –– – ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –– – 0.067 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 5.5 mΩVGS = 10V, ID = 78A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 88 ––– ––– S VDS = 25V, ID = 78A
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge –– – ––– 2 6 0 ID = 130A
Qgs Gate-to-Source Charge ––– ––– 68 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 94 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 26 ––– VDD = 30V
trRise Time ––– 200 ––– ID = 130A
td(off) Turn-Off Delay Time –– – 100 ––– RG = 4.3 Ω
tfFall Time ––– 150 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 6760 ––– VGS = 0V
Coss Output Capacitance ––– 1330 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy––– 1880310mJ IAS = 130A, L = 37µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
5.0
13
IDSS Drain-to-Source Leakage Current
IRFP064V
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
70A
IRFP064V
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
050 100 150 200 250 300
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
130A
V = 30V
DS
V = 48V
DS
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRFP064V
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
VGS
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRFP064V
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
150
300
450
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
53A
92A
130A
IRFP064V
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRFP064V
8 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
NOTES:
- D - 5.30
(
.209
)
4.70
(
.185
)
2.50
(
.089
)
1.50
(
.059
)
4
3X 0.80
(
.031
)
0.40
(
.016
)
2.60
(
.102
)
2.20
(
.087
)
3.40
(
.133
)
3.00
(
.118
)
3X
0.25
(
.010
)
MCA
S
4.30
(
.170
)
3.70
(
.145
)
- C -
2X 5.50
(
.217
)
4.50
(
.177
)
5.50
(
.217
)
0.25
(
.010
)
1.40
(
.056
)
1.00
(
.039
)
3.65
(
.143
)
3.55
(
.140
)
D
MM
B
- A -
15.90
(
.626
)
15.30
(
.602
)
- B -
123
20.30
(
.800
)
19.70
(
.775
)
14.80
(
.583
)
14.20
(
.559
)
2.40
(
.094
)
2.00
(
.079
)
2X
2X
5.45
(
.215
)
1 DIMENSIO NING & TOLER ANCING
PE R A NS I Y14.5M , 1982.
2 CONTR OLLING DIMENSIO N : INCH.
3 CONFORMS TO JEDEC OUTLINE
T O - 24 7 - A C.
1 - G ATE
2 - DRAIN
3 - SOURC E
4 - DRAIN
INTERNATIONAL
RE C T IF IER
L O G O
ASSEMBLY
LOT CO DE
E X AM PL E : T H IS IS A N IR FPE 3 0
W IT H A SS EM B L Y
LO T C OD E 3 A1 Q PART NUMBER
DATE CODE
(YYWW)
YY = YEA R
WW WEEK
3A1Q 9302
IRFPE30
A
