Nov 2008 Release, Rev i sio n E
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Schottky Barrier Diode
Absolute Ma ximum Rati ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature +125 °C
VRM Repetitive Peak Reverse Voltage 30 V
VR Maximum DC Blocking Voltage 20 V
IF(AV) Average Forward Rectified Current 500 mA
IFSM Peak Forward Surge Current
(8.3mS Single Half-wave) 5 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Low Forward Voltage Drop
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODE:
Device Type Device Marking
RB551V-30 B3
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=500µA 30 Volts
IR Reverse Leakage Current VR=20V 100 µA
VF Forward Voltage TCBAT42WS, IF=100mA
IF=500mA
0.360
0.470 Volts
RB551V-30