BSS63 - Fairchild Semiconductor - Datasheet.Directory

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 1

March 2014

BSS63

PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be op era-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number Marking Package Packing Method

BSS63 T3 SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -100 V

VCBO Collector-Base Voltage -110 V

VEBO Emitter-Base Voltage -6 V

ICCollector Current - Continuous -200 mA

TJ , TSTG Junction and Storage Temperature Ran ge -55 to +150 °C

SOT-23

Mark: T3

Description

This device is designed for general-purpose amplifier

and switch applications requiring high voltages.

Sourced from process 74.

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Electrical Characteristics

Values ar e at TA = 25°C unle ss otherwise noted.

Symbol Parameter Max. Unit

PDTotal Device Dissipation 350 mW

Derate Above TA = 25°C 2.8 mW/°C

RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Symbol Parameter Conditions Min. Max. Unit

V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100 μA, IB = 0 -100 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -110 V

V(BR)EBO Emitter-Base Breakdown V oltage IE = -1.0 μA, IC = 0 -6.0 V

ICBO Collector Cut-Off Current VCB = -90 V, IE = 0 -100 nA

VCB = -90 V, IE = 0,

TA = 150°C -50 μA

IEBO Emitter Cut-Off Current VEB = -6.0 V, IC = 0 -200 nA

hFE DC Current Gain IC = -10 mA, VCE = -1.0 V 30

IC = -25 mA, VCE = -1.0 V 30

VCE(sat) Collector-Emitter Saturation Voltage IC = -25 mA, IB = -2.5 mA -0.25 V

VBE(sat) Base-Emitter Saturation Voltage IC = -25 mA, I B = -2.5 mA -0.9 V

fTCurrent Gain - Bandwidth Product IC = 25 mA, VCE = -5.0 V,

f = 35 MHz 50 MHz

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gai n vs.

Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Em itter Saturation Voltage

vs. Collector Current Figure 4. Base-Emitter On Voltage vs.

Collector Current

Figure 5. Collect or Cut-Off Current vs.

Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with

Resistance Between Emitter-Base

0.0001 0.001 0.01 0.1 1

100

150

200

I - COLL EC TOR CU RR ENT (A)

h - TYPICAL PULSED CURRE NT GAIN

- 40 °C

25 °C

V = 5V

125 °C

0.1 1 10 100

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

β= 1 0

125 °C

- 40 °C

25 °C

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAG E (V)

BESAT

β= 10

125 °C

- 40 °C

25 °C

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BA SE-E MITTER ON VOLTA GE (V)

BE(O N)

125 °C

- 40 °C

25 °C

V = 5V

25 50 75 100 125 150

0.1

10 0

T - AM BI EN T TE MPE RATU R E ( C )

I - COLLECTOR CURRENT (nA)

V = 10 0V

CBO

0.1 1 10 100 1000

170

180

190

200

210

220

RESISTANCE (k )

BV - BREAKDOWN VOLTAGE (V)

CER

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Input and Output Capacitance vs.

Reverse Voltage Figure 8. Power Dissipation vs.

Ambient Temperature

0.1 1 10 100

V - REVERSE BIAS VOLTAGE(V)

CAPACITANCE (pF)

f = 1.0 MHz

0 25 50 75 100 125 150

100

150

200

250

300

350

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

SOT-23

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 5

Physical Dimensions

Figure 9. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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Rev. I68

Mouser Electronics

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BSS63