BSS63 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS63 Rev. 1.1.0 1
March 2014
BSS63
PNP General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be op era-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Marking Package Packing Method
BSS63 T3 SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -100 V
VCBO Collector-Base Voltage -110 V
VEBO Emitter-Base Voltage -6 V
ICCollector Current - Continuous -200 mA
TJ , TSTG Junction and Storage Temperature Ran ge -55 to +150 °C
SOT-23
Mark: T3
C
B
E
Description
This device is designed for general-purpose amplifier
and switch applications requiring high voltages.
Sourced from process 74.
BSS63 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS63 Rev. 1.1.0 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics
Values ar e at TA = 25°C unle ss otherwise noted.
Symbol Parameter Max. Unit
PDTotal Device Dissipation 350 mW
Derate Above TA = 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100 μA, IB = 0 -100 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -110 V
V(BR)EBO Emitter-Base Breakdown V oltage IE = -1.0 μA, IC = 0 -6.0 V
ICBO Collector Cut-Off Current VCB = -90 V, IE = 0 -100 nA
VCB = -90 V, IE = 0,
TA = 150°C -50 μA
IEBO Emitter Cut-Off Current VEB = -6.0 V, IC = 0 -200 nA
hFE DC Current Gain IC = -10 mA, VCE = -1.0 V 30
IC = -25 mA, VCE = -1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = -25 mA, IB = -2.5 mA -0.25 V
VBE(sat) Base-Emitter Saturation Voltage IC = -25 mA, I B = -2.5 mA -0.9 V
fTCurrent Gain - Bandwidth Product IC = 25 mA, VCE = -5.0 V,
f = 35 MHz 50 MHz
BSS63 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS63 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gai n vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Em itter Saturation Voltage
vs. Collector Current Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collect or Cut-Off Current vs.
Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with
Resistance Between Emitter-Base
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLL EC TOR CU RR ENT (A)
h - TYPICAL PULSED CURRE NT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
C
β= 1 0
125 °C
- 40 °C
25 °C
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAG E (V)
BESAT
C
β= 10
125 °C
- 40 °C
25 °C
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BA SE-E MITTER ON VOLTA GE (V)
BE(O N)
125 °C
- 40 °C
25 °C
C
V = 5V
CE
25 50 75 100 125 150
0.1
1
10
10 0
T - AM BI EN T TE MPE RATU R E ( C )
I - COLLECTOR CURRENT (nA)
A
V = 10 0V
CB
°
CBO
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
BSS63 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS63 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Input and Output Capacitance vs.
Reverse Voltage Figure 8. Power Dissipation vs.
Ambient Temperature
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLTAGE(V)
CAPACITANCE (pF)
C
f = 1.0 MHz
R
C
cb
eb
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
BSS63 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS63 Rev. 1.1.0 5
Physical Dimensions
Figure 9. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I68
®
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BSS63