TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. 94 8488 Features Applications * * * * * * * * * * * Infrared remote control units * Free air transmission systems * Infrared source for optical counters and card readers Extra high radiant power Low forward voltage Suitable for high pulse current operation e2 Standard T-1 ( 3 mm) package Angle of half intensity = 25 Peak wavelength p = 940 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 s IFM Surge forward current tp = 100 s IFSM 1.5 A PV 210 mW Power dissipation Junction temperature Tj 100 C Operating temperature range Tamb - 55 to + 100 C Storage temperature range Tstg - 55 to + 100 C Tsd 260 C RthJA 350 K/W Soldering temperature Thermal resistance junction/ ambient Document Number 81006 Rev. 1.5, 28-Nov-06 t 5 sec, 2 mm from case www.vishay.com 1 TSAL4400 Vishay Semiconductors Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Forward voltage Typ. Max IF = 100 mA, tp = 20 ms Symbol VF Min 1.35 1.6 V IF = 1 A, tp = 100 s VF 2.6 3 V TKVF - 1.3 Temp. coefficient of VF IF = 100 mA Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp = 20 ms Ie 16 30 IF = 1.0 A, tp = 100 s Ie 135 240 Unit mV/K 10 A 80 mW/sr 25 pF mW/sr Radiant power IF = 100 mA, tp = 20 ms e 35 mW Temp. coefficient of e IF = 20 mA TKe - 0.6 %/K 25 deg Peak wavelength IF = 100 mA p 940 nm Angle of half intensity Spectral bandwidth IF = 100 mA 50 nm Temp. coefficient of p IF = 100 mA TKp 0.2 nm/K Rise time IF = 100 mA tr 800 ns Fall time IF = 100 mA tf 800 ns Virtual source diameter method: 63 % encircled energy 1.9 mm Typical Characteristics Tamb = 25 C, unless otherwise specified 250 IF - Forward Current (mA) PV - Power Dissipation (MW) 250 200 150 R thJA 100 50 200 150 100 RthJA 50 0 0 94 7957 20 40 60 80 Tamb - Ambient Temperature (C) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 0 100 0 96 11986 20 40 60 80 100 Tamb - Ambient Temperature (C) Figure 2. Forward Current vs. Ambient Temperature Document Number 81006 Rev. 1.5, 28-Nov-06 TSAL4400 Vishay Semiconductors 1000 I e - Radiant Intensity (mw/sr) I F - Forward Current (A) 10 1 I FSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 10 -2 96 11987 10 1 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 100 10 2 104 Figure 6. Radiant Intensity vs. Forward Current 104 e - Radiant Power (mW) 1000 103 102 tP = 100 s tP/T = 0.001 101 1 0 2 3 4 VF - Forward Voltage (V) 13600 100 10 1 0.1 10 0 100 13602 Figure 4. Forward Current vs. Forward Voltage 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Figure 7. Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA I e rel ; e rel V Frel - Relative Forward Voltage (V) 101 102 103 I F - Forward Current (mA) 14309 Figure 3. Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 100 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 100 T amb - Ambient Temperature (C) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81006 Rev. 1.5, 28-Nov-06 0 - 10 0 10 94 7993 50 140 100 T amb - Ambient Temperature (C) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSAL4400 Vishay Semiconductors 0 10 20 30 I e rel - Relative Radiant Intensity e rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 40 1.0 0.9 50 0.8 60 70 0.7 80 0 890 14291 940 990 - Wavelength (nm) Figure 9. Relative Radiant Power vs. Wavelength 0.6 0.4 0.2 0 0.2 0.4 0.6 14328 Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions in mm 95 10913 www.vishay.com 4 Document Number 81006 Rev. 1.5, 28-Nov-06 TSAL4400 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81006 Rev. 1.5, 28-Nov-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1