TSAL4400
Document Number 81006
Rev. 1.5, 28-Nov-06
Vishay Semiconductors
www.vishay.com
1
94 8488
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL4400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve about 100 % radiant
power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1 (∅ 3 mm) package
• Angle of half intensity ϕ = ± 25°
• Peak wavelength λp = 940 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card
readers
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
e2
Parameter Test condition Symbol Value Unit
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 1.5 A
Power dissipation PV210 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 350 K/W
