1
TO-220F
Tch 150°C
*1
VDS 500V
*2
*3
Ta=25°C
Tc=25°C
t=60sec f=60Hz
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 500
Continuous drain current ID±13
Pulsed drain current ID(puls] ±52
Gate-source voltage VGS ±30
Non-Repetitive IAS 13
Maximum avalanche current
Non-Repetitive EAS 202
Maximum avalanche energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Peak diode recovery -di/dt -di/dt 100
Max. power dissipation PD2.16
70
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3696-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=6.5A VGS=10V
ID=6.5A VDS=25V
VCC=300V ID=6.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
nC
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.79
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=13A
VGS=10V
L=2.20mH Tch=25°C
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
kV/s
kV/µs
A/µs
W
°C
°C
kVrms
500
3.0 5.0
10 25
1.0 2
10 100
0.42 0.55
5.5 11
1100 1650
165 250
9 13.5
23 35
6.5 11
47 71
7.5 12
28 42
10 15
914
13 1.05 1.60
120 250
0.5 1.2
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
200309
<
=
<
=
*1 L=2.20mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph
*2 IF -ID, -di/dt=100A/µs, VCC BVDSS, Tch 150°C
*3 IF -ID, dV/dt=5kV/µs, VCC BVDSS, Tch 150°C
<
=<
=<
=
<
=<
=<
=
http://store.iiic.cc/
2
Characteristics
2SK3696-01MR FUJI POWER MOSFET
0 5 10 15 20 25 30
0
5
10
15
20
25
30 20V
10V
8V
6.5V
7.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse t est,Tch=25 °C
VGS=6.0V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Ch ar act er istic
ID=f(VGS):80 µs p u lse te st, VDS= 2 5V,Tch=25 °C
0.1 1 10 100
0.1
1
10
100
gfs [ S]
ID [A]
Ty p ica l Transconductan ce
gfs=f(ID) :80 µs pu lse test, VDS=25V,T ch = 25 °C
0 5 10 15 20 25 30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
RDS(on) [ Ω ]
ID [A]
Typ ical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pu lse test,Tch=25 °C
10V
20V
8V
7.0V
6.5V
VGS=6.0V
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Sour ce On-s ta te R esistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
0 255075100125150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
http://store.iiic.cc/
3
2SK3696-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Th reshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [°C]
0 10203040506070
0
2
4
6
8
10
12
14
16
18
20
22
Qg [nC]
Typical Gate Charge Characteristics
VGS= f(Q g ):I D= 1 3A,Tch= 25 °C
VGS [V]
400V
250V
Vcc= 100V
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A ]
VSD [V]
Ty pical Forwa rd Characteristics of Reverse Diode
IF=f(VSD):80 µs p u lse test,Tch =25 °C
10-1 100101102
100
101
102
103
Ty pical Sw itchin g Characteristics vs. ID
t=f(ID):V cc=3 00V, VGS = 10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
IAS=13A
IAS=6A
IAS=8A
E AS [mJ]
starti ng Tch [°C]
Maximum Avalanche Energy vs. startin g T ch
EAS=f(starting Tch):Vcc=50V
http://store.iiic.cc/
4
2SK3696-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Cu rren t vs Pulse width
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche C ur re nt I AV [A ]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximu m Transient T hermal Im pedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
http://store.iiic.cc/
