TSF10L100CW - TSF10L200CW
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Mounting torque: 0.56 Nm max.
V
RRM
V
dV/dt V/μs
TYP MAX TYP MAX TYP MAX
I
F
= 5A 0.71 0.80 0.81 0.88 0.84 0.90
I
F
= 10A 0.91 1.00 0.89 0.96 0.92 0.98
I
F
= 5A 0.62 0.71 0.67 0.74 0.72 0.78
I
F
= 10A 0.72 0.81 0.76 0.83 0.80 0.86
T
J
= 25°C - 100 - 50 - 50 μA
T
J
= 125°C -10- 5 - 5mA
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D0000084 Version: A15
Operating junction temperature range
Typical thermal resistance per diode
T
J
= 25°C
ITO-220AB
SYMBOL
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
I
FSM
A
V
TYPIC AL APPLICATIONS
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
- 55 to +150
Case: ITO-220AB
Polarity: As marked
Trench Schottky barrier rectifier is designed for high frequency
switched mode power supplies such as adapters, lighting, and
DC/DC converters.
TSF10L
100CW
Weight: 1.7 g (approximately)
Voltage rate of change (Rated V
R
)
6.5
TSF10L
200CW
200
per device
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Maximum average forward
rectified current A
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
5
10
I
R
Maximum repetitive peak reverse voltage 150100
T
J
= 125°C
- 55 to +150
100
10000
UNIT
V
F
Instantaneous forward
voltage per diode (Note1)
PARAMETER TSF10L
150CW
I
F(AV)
per diode
Document Number: DS_D0000084 Version: A15
TSF10LXXXCW
(Note 1) ITO-220AB
EXAMPLE
PACKING CODE
SUFFIX
C0 G
PREFERRED
PART NO.
TSF10L100CW - TSF10L200CW
Taiwan Semiconductor
ORDERING INFORMATION
PACKINGPACKAGEPART NO. PACKING CODE PACKING CODE
SUFFIX
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
TSF10L150CW C0G
PART NO.
TSF10L150CW
Note 1: "XXX" defines voltage from 100V (TSF10L100CW) to 200V (TSF10L200CW)
50 / Tube
Green compound
DESCRIPTION
C0
PACKING
CODE
G
0
2
4
6
8
10
12
0 25 50 75 100 125 150
FIG. 1 FORWARD CURRENT DERATING CURVE
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
CASE TEMPERATURE (oC)
AVERAGE FORWARD CURRENT (A)
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
TSF10L100CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
TJ=150oC
TJ=125oC
TJ=25oC
TJ=100oC
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
TSF10L150CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
TJ=150oC
TJ=125oC
TJ=25oC
TJ=100oC
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
TSF10L200CW
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
TJ=150oC
TJ=125oC
TJ=25oC
TJ=100oC
Document Number: DS_D0000084 Version: A15
TSF10L100CW - TSF10L200CW
Taiwan Semiconductor
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
TSF10L150CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
TJ=150oC
TJ=125oC
TJ=25oC
TJ=100oC
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
TSF10L100CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT
(mA)
TJ=150oC
TJ=125oC
TJ=25oC
TJ=100oC
10
100
1000
0.1 1 10 100
FIG. 8 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
TSF10L150CW
TSF10L100CW
TSF10L200CW
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
TSF10L200CW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
TJ=150oC
TJ=125oC
TJ=25oC
TJ=100oC
0
25
50
75
100
125
150
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 9 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine-Wave
DIM.
Min Max Min Max
A 4.30 4.70 0.17 0.19
B 2.50 3.16 0.10 0.12
C 2.30 2.96 0.09 0.12
D 0.46 0.76 0.02 0.03
E 6.30 6.90 0.25 0.27
F 9.60 10.30 0.38 0.41
G 3.00 3.40 0.12 0.13
H 0.95 1.45 0.04 0.06
I 0.50 0.90 0.02 0.04
J 2.40 3.20 0.09 0.13
K 14.80 15.50 0.58 0.61
L - 4.10 - 0.16
M 12.60 13.80 0.50 0.54
N - 1.80 - 0.07
O 2.41 2.67 0.09 0.11
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D0000084 Version: A15
TSF10L100CW - TSF10L200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
ITO-220AB
Unit (mm) Unit (inch)
CREAT BY ART
Document Number: DS_D0000084 Version: A15
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any
damages resulting from such improper use or sale.
TSF10L100CW - TSF10L200CW
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such
products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use
of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
