BFR460L3 Low Noise Silicon Bipolar RF Transistor * For low voltage / low current applications * Ideal for VCO modules and low noise amplifiers * Low noise figure: 1.1 dB at 1.8 GHz * Excellent ESD performance typical value 1500V (HBM) * High fT of 22 GHz * Pb-free (RoHS compliant) and halogen-free thin small leadless package * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR460L3 Marking AB Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 4.5 TA = -55 C 4.2 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 50 Base current IB 5 Total power dissipation1) Ptot 200 mW Junction temperature TJ 150 C Storage temperature TStg mA TS 108C 1T S is -55 ... 150 measured on the collector lead at the soldering point to the pcb 1 2013-09-13 BFR460L3 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 210 K/W Electrical Characteristics at T A = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 4.5 5.8 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 1 A hFE 90 120 160 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain - IC = 20 mA, VCE = 3 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-13 BFR460L3 Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 16 22 - Ccb - 0.28 0.45 Cce - 0.14 - Ceb - 0.55 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz - 1.1 - f = 3 GHz - 1.35 - Gms - 16.0 - dB Gma - 11 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 20 mA, VCE = 3 V, ZS = ZL = 50, f = 1,8 GHz - 14 - f = 3 GHz - 10 - IP3 - 27 - P-1dB - 11.5 - Third order intercept point at output2) dBm VCE = 3 V, IC = 20 mA, f = 1.8 GHz 1dB compression point at output IC = 20 mA, VCE = 3 V, f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k-1) ), G ms = S21 / S12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2013-09-13 BFR460L3 Total power dissipation P tot = (TS) Collector-base capacitance Ccb = (VCB ) f = 1MHz 240 0.8 pF mW 160 Ccb P tot 0.6 120 0.5 0.4 0.3 80 0.2 40 0.1 0 0 15 30 45 60 75 90 105 120 C 0 0 150 2 4 6 8 10 V TS 14 VCB Transition frequency fT= (IC) Power gain Gma, Gms, |S21|2 = (f) f = 1 GHz VCE = 3 V, IC = 20 mA VCE = parameter in V 50 26 GHz dB 2 to 4V 1V 22 40 20 35 16 G fT 18 30 14 25 12 20 10 15 Gms |S21| 8 Gma 10 6 5 4 2 0 5 10 15 20 25 30 35 mA 0 0 45 IC 1 2 3 4 GHz 6 f 4 2013-09-13 BFR460L3 Power gain Gma, Gms = (IC) Power gain Gma, Gms = (VCE ) VCE = 3V IC = 20 mA f = parameter in GHz f = parameter in GHz 24 24 dB 0.9 dB 0.9 20 20 18 1.8 16 16 1.8 14 2.4 12 3 G G 18 10 4 2.4 12 3 10 4 8 5 6 6 5 8 4 6 6 4 0 14 5 10 15 20 25 30 mA 2 0 0.5 40 IC 1 1.5 2 2.5 3 3.5 V 4.5 VCE 5 2013-09-13 BFR460L3 SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR460L3 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 6 GHz using typical devices. The BFR460L3 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 6 2013-09-13 Package TSLP-3-1 7 BFR460L3 2013-09-13 BFR460L3 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2013-09-13