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BFR460L3
Low Noise Silicon Bipolar RF Transistor
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
typical value 1500V (HBM)
• High fT of 22 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR460L3 AB 1 = B 2 = E 3 = C TSLP-3-1
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
4.5
4.2
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC50 mA
Base current IB5
Total power dissipation1)
TS ≤ 108°C
Ptot 200 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the collector lead at the soldering point to the pcb
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BFR460L3
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 210 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5.8 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 20 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR460L3
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 1 GHz
fT16 22 - GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.28 0.45 pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.14 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Minimum noise figure
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
f = 3 GHz
NFmin
-
-
1.1
1.35
-
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
Gms - 16.0 - dB
Power gain, maximum available1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 3 GHz
Gma - 11 - dB
Transducer gain
IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1,8 GHz
f = 3 GHz
|S21e|2
-
-
14
10
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 20 mA, f = 1.8 GHz
IP3 - 27 - dBm
1dB compression point at output
IC = 20 mA, VCE = 3 V, f = 1.8 GHz
P-1dB - 11.5 -
1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR460L3
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
mW
240
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 V14
VCB
0
0.1
0.2
0.3
0.4
0.5
0.6
pF
0.8
Ccb
Transition frequency fT= ƒ(IC)
f = 1 GHz
VCE = parameter in V
0 5 10 15 20 25 30 35 mA 45
IC
2
4
6
8
10
12
14
16
18
20
22
GHz
26
fT
2 to 4V
1V
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 3 V, IC = 20 mA
01234GHz 6
f
0
5
10
15
20
25
30
35
40
dB
50
G
Gms
Gma
|S21|²
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BFR460L3
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter in GHz
0 5 10 15 20 25 30 mA 40
IC
4
6
8
10
12
14
16
18
20
dB
24
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0.5 1 1.5 2 2.5 3 3.5 V4.5
VCE
0
2
4
6
8
10
12
14
16
18
20
dB
24
G
0.9
1.8
2.4
3
4
5
6
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BFR460L3
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFR460L3 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 6 GHz using typical devices.
The BFR460L3 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
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BFR460L3
Package TSLP-3-1
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BFR460L3
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
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