MMBT3906
PNP General
Purpose Amplifier
SOT-23
Suggested Solder
Pad Layout
Features
• Surface Mount SOT-23 Package
• Capable of 350mWatts of Power Dissipation
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0) 40 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0) 40 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0) 5.0 Vdc
IBL Base Cutoff Current
(VCE=30Vdc, V BE=3.0Vdc) 50 nAdc
ICEX Collector Cutoff Current
(VCE=30Vdc, V BE=3.0Vdc) 50 nAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
60
80
100
60
30
300
VCE(sat) Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc) 0.25
0.4 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc) 0.65 0.85
0.95 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTCurrent Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz) 250 MHz
Cobo Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz) 4.5 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz) 10.0 pF
NF Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ
f=10Hz to 15.7kHz) 4.0 dB
SWITCHING CHARACTERISTICS
td Delay Time (VCC=3.0Vdc, V BE=0.5Vdc 35 ns
tr Rise Time IC=10mAdc, I B1=1.0mAdc) 35 ns
ts Storage Time (VCC=3.0Vdc, IC=10mAdc 225 ns
tf Fall Time IB1=IB2=1.0mAdc) 75 ns
*Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
mm
2 A
C
B E
Pin Configuration
Top View
K
A
B
D
F
G
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omponents
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