HETERO JUNCTION FIELD EFFECT TRANSISTOR K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES 3 I N nt :C U E3 E 52 D 0K NE3514S02 * Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz * Micro-X plastic (S02) package APPLICATIONS * 20 GHz-band DBS LNB * Other K-band communication systems ORDERING INFORMATION Order Number Package Quantity O Re pla N c T Part Number NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A S02 (Pb-Free) 2 kpcs/reel Supplying Form * 8 mm wide embossed taping D * Pin 4 (Gate) faces the perforation side 10 kpcs/reel of the tape em e NE3514S02-T1C Marking Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3514S02-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS 3 V Drain Current ID IDSS mA Gate Current IG 100 A 165 mW Tch +125 C Tstg 65 to +125 C SC Parameter Total Power Dissipation -In Channel Temperature Storage Temperature Ptot Note 2 ro p D D I Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10593EJ01V0DS (1st edition) Date Published February 2006 CP(N) NE3514S02 RECOMMENDED OPERATING CONDITIONS (T A = +25C) MIN. TYP. MAX. Unit VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin 0 dBm 3 Drain to Source Voltage Symbol I N nt :C U E3 E 52 D 0K Parameter ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA VGS (off) VDS = 2 V, ID = 100 A 0.2 0.7 2.0 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 20 GHz 0.75 1.0 dB Associated Gain Ga 8 10 dB ro p D D I -In SC em e O Re pla N c T Gate to Source Cutoff Voltage 2 Data Sheet PG10593EJ01V0DS NE3514S02 ro p D D I -In SC em e O Re pla N c T 3 I N nt :C U E3 E 52 D 0K TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. Data Sheet PG10593EJ01V0DS 3 NE3514S02 ro p D D I -In SC em e O Re pla N c T 3 I N nt :C U E3 E 52 D 0K S-PARAMETERS 4 Data Sheet PG10593EJ01V0DS NE3514S02 RT/duroid 5880/ROGERS t = 0.254 mm r = 2.20 tan delta = 0.0009 @10 GHz ro p D D I -In SC em e O Re pla N c T 3 I N nt :C U E3 E 52 D 0K RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) Data Sheet PG10593EJ01V0DS 5 NE3514S02 PACKAGE DIMENSIONS ro p D D I -In SC em e O Re pla N c T 3 I N nt :C U E3 E 52 D 0K S02 (UNIT: mm) 6 Data Sheet PG10593EJ01V0DS NE3514S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 3 Soldering Method I N nt :C U E3 E 52 D 0K methods and conditions other than those recommended below, contact your nearby sales office. HS350 ro p D D I -In SC em e O Re pla N c T Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10593EJ01V0DS 7 NE3514S02 This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. I N nt :C U E3 E 52 D 0K Caution GaAs Products * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 3 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. ro p D D I -In SC em e O Re pla N c T * Do not lick the product or in any way allow it to enter the mouth. 8 Data Sheet PG10593EJ01V0DS NOTICE 4. 5. 6. 7. 8. 9. 3 SC 10. I en N t: U CE E 35 20 D K 3. em 2. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 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This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. O Re pla N c T 1. 11. 12. D D I -In NOTE 1: "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. NOTE 2: "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. NOTE 3: Products and product information are subject to change without notice. ro p CEL Headquarters * 4590 Patrick Henry Drive, Santa Clara, CA 95054 * Phone (408) 919-2500 * www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus