Ol DE 3875 a 3875081 GE SOLID STATL _ ' GS) OObeLeN oO T> tT 33-07 ~~ High-Speed Power Transistors File Number 325 2N5320, 2N5321, 2N5322, 2N5323 Complementary N-P-N & P-N-P Silicon Power Transistors General-Purpose Types for Small-Signal, Medium-Power Applications Features: = 2N5322 P-N-P 2N5320 2N5323 Complements of: 2N5321 = Maximum safe-area-of-operation curves i = Planar construction for iow-noise and low leakage characteristics : = Low saturation voltage : = High beta at high collector current i | TERMINAL DESIGNATIONS | The RCA-2N5320, 2N5321, 2N5322 and 2N5323 are doubled-diffused epltaxial-planar silicon power transistors intended for small-signal medium-power applications. The 2N5320 and 2N5321 n-p-n types are actually high-current, high-dissipation versions of the 2N2102 with all of the | | salient features of that device. The 2N5322 and 2N5323, e (CASED p-n-p complements of the 2N5320 and 2N5321, are actually high-current, high-power versions of the 2N4036 with all of 92c$-27512 its additional outstanding features. ' The 2N5320, 2N5321, 2N5322, and 2N5323 are supplied in JEDEC TO-205AD : the TO-205AD package. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5321 2N5323 2N5320 2N5322 75 -75 100 -100 Vv 75 -75 100 -100 Vv 65 5 90 -90 Vv 50 -50 76 -76 v 5 -5 7 -7 Vv 2 -2 2 2 A 1 -1 1 -1 A 10 10 10 10 Ww Derate linearly at 0.057 W/C -65 to +200 C Th At distance > 1/16 In. (1.58 mm) from seating plane FOr 10 $ MAX. 2... cece cee e nec e eee e rete sree eres renaesene 230 C * In accordance with JEDEC registration data format (JS-6-RDF-1). 127 0667 F-04 o 3875081 G E SOLID STATE OL DEG 3875081 OO171be5 2 TI. T-33-07 High-Speed Power Transistors 2N5320, 2N5321, 2N5322, 2N5323 ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25C, unfess otherwise specified TEST CONDITIONS LIMITS VOLTAGE | CURRENT CHARACTERISTIC 2N5320 2N5321 | 2N5322 | 2N5323 |UNITS Vde mA de Voce | VBE Ic tg | Min. | Max. | Min.| Max. | Min. |Max. | Min. | Max. 80a 7yost-}] -J/-{f-]J-]- 60 - -j- 5 - -]|-jJ- 'cBo 804 =JoO,o] =] = |-os} - |] - | #4 604 ~f-J- -/|/-]-|]|-/3 100 | -1.5 ~yor1!-}-/]-t-[-|- 7% [-15 -~/|-f--]orj -]-] -] - ICEX 100] 15 ~ fo; o] 2] - fof -|-4 -75 | 15 -}/-]-[-} -]-] =- [-e1 70 | -1.5 -~}/5 |-]| -] ~-}|-}-]- To = 160C Se four) 2) ryaycyot 45 | 15 ~}|/-]-{-]| -]-}|-[- -7 0 ~forl-] -} -{-]-]- a) 0 ~)}-]--for-eff-j-q|- 7 0 ~} oP op ty = foul = |= | 5 0 -f-j-{ -| -[- | - [0.1 *!EB0 rs fory-f-}-lf-]-]- ' -4 0 -|-{[-|]o5s}/ -} -y}-|[- 5 | 0 ~}-)-4) 2] - Joa} - | - | #4 4 0 -~-}|-{[-]-{1-] =} = [05 V 1.5] 0.1 yo] - |} 7} -| -] -] -] - (BRICEV 1.5 | -0.1 ~ | | - | ~ [rool - [-75| - | Y Vcer(susl@ 1006 gj -je}~]| -| -] -] - v Ree = 1002 1006 -~|- ]|--] - | -90) - |-65] - j00b |} o | 75 | - | 50} - | - | - | - | - [Vceolsusl? -iob} o | | - | - | - | -75} - [sol - | Y 500o |} 50] } 05] -] os} - | -] -]- *|Vcelsat) -soob}_sol - | - | - | | - j-o7} - Lal 4 5006 -]Jirt-] 14, -]-] -]- Vy . . BE -4 =500b ee ee ee eee 4 5006 30 |] 130] 40 | 20); - | - |] -4- tlhee -4 500b -}|- }- |] | 30 | 130) 40 | 250 2 1000b i | ~|-}-] -}|-] -7U - -2 10000 -/-t-] -] 0]-}$-|- #! (hte| 4 50 5i/-{|[5{!-}=-{,-]-|- f= 10MHz -4 50 ~}|/-{[-}] -|5]-]54- lend 50 200} |200; ~}j j -] -]|- S/b _36 ~}|}- | |-sss} |-2es] | le 30 soo | 50/ | so} | so} | -} -] - ON 30 _soo |-so} |} - | | - | | 100] - [1o0| 30 500 | 50/ | 800}; | soo} - | - | - | - Orr ~30 _s00 |-sol | - | - | | [1000] |1o00} 4] ROJC [175] | 175] | 175] | 17.5 | OCA ROJA |150| | 150] | 150] | 150 jC/W Vos * tn accordance with JEDEC registration data format (JS-6 ROF-1) @ CAUTION: The sustaining voltages Veeolsus! and VceR(sus) MUST NOT be measured on a curve tracer. B Pulsed: pulse duration < 300 ps, duty factor < 0.02. @ Pulsed; 0.4 s non-repetitive pulse. a 3875081 GE SOLID STATE OL DE 3875081 0017126 4 po T-Bs-O7 COLLECTOR CURRENT (I}-A 10 | COLLECTOR-TO-EMITTER VOLTAGE [VCEI-V Hign-sp' Power Transistors 2N5320, 2N5321, 2N5322, 2N5323 00 9208-17548 Fig.1 Maximum operating areas for types 2N5320 and 2N5321. COLLECTOR-To EMITTER VOLTAGE {ceh= 4 COLLECTOR CURRENT (1)-mA BASE-TO-EMITTER VOLTAGE (ae) 92C$-I5003R) Fig.2 Typical static beta characteristics for types 2N5320 and 2N5321. COLLECTOR. TO-EMITTER VOLTAGE (Vee) = ( + ; a 5 5 & 3 2 BASE-TO-EMITTER VOLTAGE (ge)- g32C$I5001Rt Fig.4 Typical output characteristics for types 2N5320 and 2N5321. COLLECTOR-TO EMITTER VOLTAGE (c_el= -4 COLLECTOR CURRENT (i}-mA BASE TQ EMITTER VOLTAGE (Ype)- 9205-15002 RI Fig.:3 Typical static beta characteristics for types 2N5322 and 2N5323. COLLECTOR-TO-EMITTER YOLTAGE (cg}= -4 < E U 3 E z & 5 3 g < a BASE-TO-EMITIER VOLTAGE (Yae)- 920S~ISOCORI Fig.5 - Typical output characterisites for types 2N5322 and 2N323. 0669 F-06 \ 129 3875081 G E SOLID sTATEO) DE) 3875081 oo1zze7 b ff , 7-33-07 High Speed Power Transistors 2N5320, 2N5321, 2N5322, 2N5323 7 < uo a e z a 4 > Oo k 3 ir] a J 3 o 2 4 6 6 -10 -100 2 4 668 2 COLLECTOR-10- EMITTER VOLTAGE (og)-V 9209-17547 Fig.6 Maximum operating areas for types 2N5322 and 2N5323. COLLECTOR-TO-EMLTTER YOLTAGE (ce) 4 as 3 DC FORWARD.CURRENT TRANSFER RATIO (hee) 1 to 10? 193 COLLECTOR CURRENT (I}~mA Ot 920$-15005RI Fig.7 Typical transfer characteristics for types 2N5320 and 2N5321. CASE TEMPERATURE 25C COLLECTOR CURRENT (Ig }-A COLLECTOR-TO-EMITTER VOLTAGE (Yce]V 92C8-ISO06RI Fig.9 Typical input characteristics for types 2N5320 and 2N5321, 130 tod 3 Ctr Tl ry Be eatin ll eo T WL Ld | i EEN POTN LE i CCITT TIES 0 -13 ~ ih -10e COLLECTOR CURRENT (Ic)-@A DC PORWARD~CURRENT TRANSFER RATIO (hFEY S 92C5-IS004RI Fig.8 Typical transter characteristics for types 2N5322 and 2N5323. CURRENT COLLECTOR-TO-EMITTER VOLTAGE {VceEIV 920S-i8007RI Fig.10 Typical input characteristics for types 2N5322 and 2N5323. 0670 F-07 a 3875081 GE SOLID sTaTe O1 De ff 3a7soa1 gooLzi2a & Tt T-33-0O7 High-Speed Power Transistors 2N5320, 2N5321, 2N5322, 2N5323 Vea-l0v vocr30 1AOUUST TO SET Tpzt QUTPUT TO OSCILLOSCOPE "CHANNEL A OUTPUT To 2052 60 ACOSCILLOSCOPE iy" 200F EL8 ty $18 reer B zeta SuF Ciy*200F INES. . INPUT FROM PULSE 2N5320 GENERATOR 2no321* PULSE OURATION=20u8 PULSE REP FREQ IO kHz 3 lOns oO O ae OSCILLOSCOPE ee GROUND For 2N5322 or 2N5323, reverse 9eC3-17020 direction of 1gy and Iga and re- verse polarity of Vgg and Vcc. Fig.11 Circuit used to measure switching times for all types. 131 0671 F-08