Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 2 1Publication Order Number:
BCW68GLT1/D
BCW68GLT1
General Purpose Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –45 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current – Continuous IC–800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR–5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to
+150 °C
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT–23 (T O–236)
CASE 318
STYLE 6
MARKING DIAGRAM
3
DG M
COLLECTOR
3
1
BASE
2
EMITTER
12
Device Package Shipping
ORDERING INFORMATION
BCW68GLT1 SOT–23 3000/Tape & Reel
DG = Device Code
M = Date Code
http://onsemi.com
BCW68GLT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO –45 – – Vdc
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) V(BR)CES –60 – – Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 – – Vdc
Collector Cutoff Current
(VCE= –45 Vdc, IE = 0)
(VCE= –45 Vdc, IB = 0, TA = 150°C)
ICES –
––
––20
–10 nAdc
µAdc
Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) IEBO – – –20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –300 mAdc, VCE = –1.0 Vdc)
hFE 120
160
60
–
–
–
400
–
–
–
Collector–Emitter Saturation Voltage (IC = –300 mAdc, IB = –30 mAdc) VCE(sat) – – –1.5 Vdc
Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) – – –2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) fT100 – – MHz
Output Capacitance
(VCB= –10 Vdc, IE = 0, f = 1.0 MHz) Cobo – – 18 pF
Input Capacitance
(VEB= –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – – 105 pF
Noise Figure
(IC= –0.2 mAdc, V CE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz,
BW = 200 Hz)
NF– – 10 dB
BCW68GLT1
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INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device
is determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device i s heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and soldering
should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
BCW68GLT1
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PACKAGE DIMENSIONS
SOT–23 (T O–236)
CASE 318–09
ISSUE AH
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-01, -02, AND -06 OBSOLETE, NEW
STANDARD 318-09.
1
3
2
AL
BS
VG
DH
C
KJ
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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Sales Representative.
BCW68GLT1/D
Thermal Clad is a registered trademark of the Bergquist Company.
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