NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC(R) NRF1 process - A proprietary GaN-on-Silicon technology FEATURES * Optimized for broadband operation from DC-4000MHz * 25W P3dB CW power at 3000MHz * 16-20W P3dB CW power from 1000-2500MHz in application board with >45% drain efficiency * 10-20W P3dB CW power from 30-1000MHz in application board with >50% drain efficiency * High efficiency from 14 - 28V * 4.0 C/W RTH with maximum TJ rating of 200 C * Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 C flange * Subject to EAR99 export control DC - 4000 MHz 25 Watt, 28 Volt GaN HEMT RF Specifications (CW, 3000MHz): VDS = 28V, IDQ = 225mA, TC = 25C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units 43 44 - dBm P3dB Average Output Power at 3dB Gain Compression P1dB Average Output Power at 1dB Gain Compression - 43 - dBm GSS Small Signal Gain 12 13 - dB Drain Efficiency at 3dB Gain Compression 57 65 - % h VSWR 10:1 VSWR at all phase angles No damage to the device Figure 1 - Typical CW Performance in Load-Pull, VDS = 28V, IDQ = 225mA Figure 2 - Typical CW Performance1 in Load-Pull, VDS = 28V, IDQ = 225mA Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 resistor in the RF path added for stability NPT1012 Page 1 NDS-025 Rev. 3, April 2013 NPT1012 DC Specifications: TC = 25C Symbol Parameter Min Typ Max Units 100 - - V - - 4 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 8mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 225mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 60mA) - 0.44 0.55 W Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS = 2.0V) - 5.4 - A Min Typ Max Units - 4.0 - C/W ID,MAX Thermal Resistance Specification Symbol qJC Parameter Thermal Resistance (Junction-to-Case), TJ = 180 C Absolute Maximum Ratings: Not simultaneous, TC = 25C unless otherwise noted Symbol Parameter Max Units V VDS Drain-Source Voltage 100 VGS Gate-Source Voltage -10 to 3 V IG Gate Current 40 mA PT Total Device Power Dissipation (Derated above 25C) 44 W TSTG TJ Storage Temperature Range Operating Junction Temperature HBM Human Body Model ESD Rating (per JESD22-A114) MM Machine Model ESD Rating (per JESD22-A115) CDM NPT1012 Charge Device Model ESD Rating (per JESD22-C101) Page 2 -65 to 150 C 200 C 1B (+/-500V) A (>100V) IV (>1000V) NDS-025 Rev. 3, April 2013 NPT1012 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =225mA, TA=25C unless otherwise noted Table 1: Optimum Source and Load Impedances1 for CW Gain, Drain Efficiency, and Output Power Performance Frequency (MHz) VDS (V) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 500 14 7.0 + j8.2 8.6 + j7.4 12 27.8 76 500 22 7.0 + j8.2 9.7+ j11.3 21 29.2 74 500 28 7.0 + j8.2 9.7 + j14.1 26 29.7 68 900 14 5.8 + j3.1 6.8 + j4.7 12 22.4 74 900 22 5.8 + j3.1 9.6 + j5.3 24 23.3 74 900 28 5.8 + j3.1 9.8 + j 7.8 26 23.6 67 1800 28 3.5 - j3.6 6.9 + j2.0 26 18.4 69 2500 14 3.9 - j7.5 6.2 - j8.0 13 13.7 70 2500 22 4.8 - j7.0 5.5 - j4.1 19 14.9 69 2500 28 4.8 - j7.0 5.5 - j4.1 26 15.2 69 3000 28 5.3 - j8.8 5.3 - j6.4 26 13.2 66 3500 28 5.0 - j14.5 7.0 - j9.5 26 12.9 63 Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 resistor in the RF path added for stability ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 3 - Optimum Impedances for CW Performance, VDS = 28V NPT1012 Page 3 NDS-025 Rev. 3, April 2013 NPT1012 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =225mA, TA=25C unless otherwise noted 72% 72% 43.5dBm 44.0dBm Figure 5 - Load-Pull Contours1, 900MHz, PIN = 21.0dBm, ZS = 5.8 + j3.1 Figure 4 - Load-Pull Contours1, 500MHz, PIN = 14.5dBm, ZS = 7.0 + j8.2 Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 resistor in the RF path added for stability 66% 69% 44.0dBm 44.0dBm Figure 7 - Load-Pull Contours, 2500MHz, PIN = 29.4dBm, ZS = 4.8 - j7.0 Figure 6 - Load-Pull Contours, 1800MHz, PIN = 26.5dBm, ZS = 3.5 - j3.6 NPT1012 Page 4 NDS-025 Rev. 3, April 2013 NPT1012 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =225mA, TA=25C unless otherwise noted 63% 63% 44.0dBm 44.0dBm Figure 8 - Load-Pull Contours, 3000MHz, PIN = 31.7dBm, ZS = 5.3 - j8.8 Figure 9 - Load-Pull Contours, 3500MHz, PIN = 33.5dBm, ZS = 5.0 - j14.5 Figure 10 - Typical CW Performance in Load-Pull Figure 11 - Typical CW Performance1 Over Voltage in Load-Pull, 500MHz Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 resistor in the RF path added for stability NPT1012 Page 5 NDS-025 Rev. 3, April 2013 NPT1012 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =225mA, TA=25C unless otherwise noted Figure 12 - Typical CW Performance1 Over Voltage in Load-Pull, 900MHz Figure 13 - Typical CW Performance Over Voltage in Load-Pull, 2500MHz Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 resistor in the RF path added for stability Figure 14 - Typical CW Performance Over Temperature in Nitronex Test Fixture, 3000MHz Figure 15 - Quiescent Gate Voltage (VGSQ) Required to Reach IDQ as a Function of Case Temperature, VDS = 28V Figure 16 - MTTF of NRF1 Devices as a Function of Junction Temperature Figure 17 - Power Derating Curve NPT1012 Page 6 NDS-025 Rev. 3, April 2013 NPT1012 Ordering Information1 Part Number NPT1012B Description NPT1012 in AC200B-2 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 18 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPT1012 Page 7 NDS-025 Rev. 3, April 2013 NPT1012 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. (c) Nitronex, LLC 2012. All rights reserved. NPT1012 Page 8 NDS-025 Rev. 3, April 2013