100V
80V
10V
7.5A
4A
115W
–65 to 200°C
200°C
2N3448
VCBO Collector – Base Voltage (IE= 0)
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICCollector Current
IBBase Current
Ptot Total Power Dissipation at Tcase ≤ 25°C
Tstg,Storage Temperature
TjJunction Temperature
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
NPN SILICON POWER
TRANSISTOR
FEATURES
• HIGH GAIN
• LOW SATURATION VOLTAGES
• HIGH RELIABILITY
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
TO–3(TO204AA)
PIN 1 — Base PIN 2 — Emitter Case is Collector
.
APPLICATIONS
• POWER SWITCHING CIRCUITS
• MOTOR DRIVE APPLICATIONS
MECHANICAL DATA
Dimensions in mm(inches)
Document Number 6520
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N3448
IC= 100mA
IC= 5A VCE = 5V
VCE = 80V VBE = -1.0V
TCASE =150°C
VEB = 10V IC= 0
VCE = 60V IB= 0
IC= 1.0A IE= 0
IC= 5A IB= 0.5A
IC= 5A IB= 0.5A
IC= 0.5A VCE = 5V
IC= 5.0A VCE = 5V
IC= 0.5A VCE = 10V f = 1 KHz
IC= 0.5A VCE = 10V f = 10 MHz
VCB = 10V f =0.1 MHz
VCC = 25V IC= 5.0A
IB1 =-IB2 = 0.5A
Collector - Emitter Breakdown
Voltage
Base – Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Collector Base Breakdown
Voltage
Collector – Emitter Saturation
Voltage
Base – Emitter
Saturation Voltage
DC Current Gain
Small Signal Current Gain
Collector Base Capacitance
Delay Time +Rise Time
Storage Time
Fall Time
80
1.0 1.4
0.1
1.0
0.25
1.0
100
0.8 1.5
1.0 1.5
40 85
40 75 120
40 200
1.0 1.6
260 400
0.15 0.35
0.9 2.0
0.15 0.35
V
V
mA
mA
mA
V
V
V
—
—
pF
μs
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
VCEO(BR)
VBE
ICEX
IEBO
ICEO
VCBO(BR)
VCE(sat)
VBE(sat)
hFE
hfe
Ccbo
td+tr
ts
tf
Document Number 6520
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
