CBR1F-D020S SERIES
SURFACE MOUNT
1 AMP FAST RECOVERY
SILICON BRIDGE RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1F-D020S
Series types are fast recovery, full wave bridge
rectifiers mounted in a durable epoxy surface mount
molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: CBR1F- CBR1F- CBR1F- CBR1F- CBR1F-
(TA=25°C unless otherwise specified) SYMBOL D020S D040S D060S D080S D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V
DC Blocking Voltage VR 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V
Average Forward Current (TA=40°C) IO 1.0 A
Peak Forward Surge Current IFSM 50 A
Rating for Fusing (t<8.35ms) I2t 3.74 A2s
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR V
R=Rated VRRM 5.0 µA
IR V
R=Rated VRRM, TA=125°C 0.5 mA
VF I
F=1.0A 1.3 V
trr I
F=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) 200 ns
trr I
F=0.5A, IR=1.0A, Rec. to 0.25A (600V) 300 ns
trr I
F=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) 500 ns
CJ V
R=4.0V, f=1.0MHz 25 pF
SMDIP CASE
R1 (4-January 2010)
www.centralsemi.com
CBR1F-D020S SERIES
SURFACE MOUNT
1 AMP FAST RECOVERY
SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (4-January 2010)
