This is information on a product in full production.
August 2015 DocID16558 Rev 20 1/24
2N2222AHR
Hi-Rel 40 V, 0.8 A NPN transistor
Datasheet
-
production data
Figure 1. Internal schematic diagramI
Features
•Hermetic packages
•ESCC and JANS qualified
•Up to 100 krad(Si) low dose ratee
Description
The 2N2222AHR is a silicon planar NPN
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
TO-18
LCC-3
3
1
2
UB
3
1
2
3
1
2
4
Pin 4 in UB is connected to the metallic lid.
Parameter ESCC JANS
BV
CEO min
40 V 50 V
I
C
(max) 0.8 A
h
FE
at 10 V - 150 mA 100
Table 1. Device summary
Device Qualification
system Agency
specification Package Radiation level EPPL
JANSR2N2222AUBx JANSR MIL-PRF-19500/255 UB 100 krad
high and low dose rate -
JANS2N2222AUBx JANS MIL-PRF-19500/255 UB - -
2N2222ARUBx ESCC Flight 5201/002 UB 100 krad - low dose rate Target
2N2222AUBx ESCC Flight 5201/002 UB - Target
SOC2222ARHRx ESCC Flight 5201/002 LCC-3 100 krad - low dose rate Yes
SOC2222AHRx ESCC Flight 5201/002 LCC-3 - Yes
2N2222ARHRx ESCC Flight 5201/002 TO-18 100 krad - low dose rate Target
2N2222AHRx ESCC Flight 5201/002 TO-18 - -
www.st.com
Contents 2N2222AHR
2/24 DocID16558 Rev 20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3 T O-18 pa ckage information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID16558 Rev 20 3/24
2N2222AHR Electrical ratings
24
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 75 V
V
CEO
Collector-emitter voltage (I
B
= 0) for JANS devices 50 V
Collector-emitter voltage (I
B
= 0) for ESCC devices 40 V
V
EBO
Emitter-base voltage (I
C
= 0) 6 V
I
C
Collector current 0.8 A
P
TOT
Total dissipation at T
amb
£ 25 °C
ESCC: TO-18
LCC-3 and UB
LCC-3 and UB
(1)
JANS: LCC-3UB
Total dissipation at T
case
£ 25 °C
ESCC: TO-18
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
0.5
0.5
0.73
0.5
1.8
W
Total dissipation at T
sp(IS)
= 25 °C
JANS: UB 1W
T
STG
Storage temperature -65 to 200 °C
T
J
Max. operating junction temperature 200 °C
Table 3. Thermal data
Symbol Parameter LCC-3
and UB TO-18 Unit
R
thJC
Thermal resistance junction-case (max) for JANS - -
°C/W
Thermal resistance junction-case (max) for ESCC - 97
Rt
hJSP(IS)
Thermal resistance junction-solder pad (infinite
sink) (max) for JANS 90 -
Thermal resistance junction-solder pad (infinite
sink) (max) for ESCC --
R
thJA
Thermal resistance junction-ambient (max) for
JANS 325 -
Thermal resistance junction-ambient (max) for
ESCC 350
240
(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
350
Ele ctr ical characteristics 2N2222AHR
4/24 DocID16558 Rev 20
2 Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provide d in dedicated ta bles.
T
case
= 25 °C unless otherwise specified.
2.1 JANS electrical characteristics
Table 4. JANS electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0)
V
CB
= 75 V
V
CB
= 60 V
V
CB
= 60 V T
amb
= 150 °C
10
10
10
µA
nA
µA
I
CES
Collector cut-off
current
(I
E
= 0) V
CE
= 50 V 50 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 6 V
V
EB
= 4 V 10
10 µA
nA
V
(BR)CEO (1)
Collector-emitter
breakd own vo ltage
(I
B
= 0) I
C
= 10 mA 50 V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA 0.3
1V
V
V
BE(sat) (1)
Base-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA 0.6 1.2
2V
V
h
FE (1)
DC current gain
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
T
amb
= -55 °C
50
75
100
100
30
35
325
300
h
fe
Small signal current
gain
V
CE
= 20 V I
C
= 20 mA
f = 100 MHz
V
CE
= 10 V I
C
=1 mA
f = 1 kHz
2.5
50
C
obo
Out put capacitance
(I
E
= 0) V
CB
= 10 V
100 kHz £ f £ 1 MHz 8pF
C
ibo
Out put capacitance
(I
E
= 0) V
EB
= 0.5 V
100 kHz £ f £ 1 MHz 25 pF
DocID16558 Rev 20 5/24
2N2222A HR Electri cal chara ct er istics
24
2.2 ESCC electrical characteristics
t
on
Turn-on time V
CC
= 30 V I
C
= 150 mA
I
B1
= 15 mA 35 ns
t
off
Turn-off time V
CC
= 30 V I
C
= 150 mA
I
B1
= -I
B2
= 15 mA 300 ns
1. Pulsed duration = 300 µs, duty cycle £ 2 %
Table 4. JANS electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Table 5. ESCC electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 60 V
V
CB
= 60 V T
amb
= 150 °C 10
10 nA
µA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 3 V 10 nA
V
(BR)CBO
Collector-base
breakd own vo ltage
(I
E
= 0) I
C
= 100 µA 75 V
V
(BR)CEO (1)
Collector-emitter
breakd own vo ltage
(I
B
= 0) I
C
= 30 mA 40 V
V
(BR)EBO
Emitter-base
breakd own vo ltage
(I
C
= 0) I
E
= 100 µA 6 V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 0.3 V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 0.87 1.2 V
h
FE (1)
DC current gain
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
T
amb
= -55 °C
35
75
100
40
35
300
h
fe
Small signal current
gain V
CE
= 20 V I
C
= 20 mA
f = 100 MHz 310
C
obo
Out put capacitance
(I
E
= 0) V
CB
= 10 V
100 kHz £ f £ 1 MHz 8pF
Ele ctr ical characteristics 2N2222AHR
6/24 DocID16558 Rev 20
2.3 Electrical characteristics (curves)
t
on
Turn-on time V
CC
= 30 V I
C
= 150 mA
I
B1
= 15 mA 35 ns
t
off
Turn-off time V
CC
= 30 V I
C
= 150 mA
I
B1
= -I
B2
= 15 mA 285 ns
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
Table 5. ESCC electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Figure 2. Safe operating area for LCC-3 and UB Figure 3. Safe operating area for TO-18
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DocID16558 Rev 20 7/24
2N2222A HR Electri cal chara ct er istics
24
2.4 Test circuits
Figure 7. JANS saturated turn-on switching time test circuit
Figure 6. Base emitter saturation voltage
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Ele ctr ical characteristics 2N2222AHR
8/24 DocID16558 Rev 20
Figure 8. JANS saturated turn-off switching time test circuit
Figure 9. ESCC resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
DocID16558 Rev 20 9/24
2N2222AHR Radiation hardness assurance
24
3 Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/255 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5201/002 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N2222AHR
series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s,
identical to the ESCC 100 krad guarantee. It is supported with the same Radiation
Verification Test report provided with each shipment. A brief summary of the standard High
Dose Rate by wafer lot JANSR guarantee is provided below:
– All test are performed in accordance to MIL-PRF-19500 and test method 1019 of
MIL-STD-750 for total Ionizing dose.
– The table below provides for each monitored parameters of the test conditions and
the acceptance criteria
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical charact eri stics
Symbol Parame ter Test conditions Value Unit
Min. Max.
I
CBO
Collector to base
cutoff curr ent V
CB
= 75 20 µA
V
CB
= 60 V 20 nA
I
EBO
Emitter to base
cutoff current
V
EB
= 6 V 20 µA
V
EB
= 4 V 20 nA
V
(BR)CEO
Breakdow n vo ltage,
collector to emitter I
C
= 10 mA 50 V
I
CES
Collector to emitter
cutoff curr ent V
CE
= 50 V 100 nA
h
FE
Forward-current
transfer ratio
V
CE
= 10 V; I
C
= 0.1 mA [25]
(1)
V
CE
= 10 V; I
C
= 1.0 mA [37.5]
(1)
325
V
CE
= 10 V; I
C
= 10 mA [50]
(1)
V
CE
= 10 V; I
C
= 150 mA [50]
(1)
300
V
CE
= 10 V; I
C
= 500 mA [15]
(1)
V
CE(sat)
Collector-emitter
saturation voltage I
C
= 150 mA; I
B
= 15 mA 0.35 V
I
C
= 500 mA; I
B
= 50 mA 1.15
V
BE(sat)
Base-emitter
saturation voltage I
C
= 150 mA; I
B
= 15 mA 0.6 1.38 V
I
C
= 500 mA; I
B
= 50 mA 2.3
Radiation hardness assurance 2N2222AHR
10/24 DocID16558 Rev 20
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/o r detailed speci fic ati on.
ST goes beyond the ESCC specification by performing the following procedure:
– Test of 11 pieces by wafer, 5 biased at least 80% of V
(BR)CEO
, 5 unbiased and 1
kept for reference
– Irradiation at 0.1 rad (Si)/s
– Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10
samples comply with the post radiation electrical characteristics provided in
Table 8
– Delivery together with the parts of the radiation verification test (RVT) report of the
particular wafer used to manufacture the products. This RVT includes the value of
each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at
room temperature and after an additional 168 hour annealing at 100°C.
1. See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the
pre- and Post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The
[h
FE
] value can never exceed the pre-radiation minimum h
FE
that it is based upon.
Table 7. Radiation summary
Radiation test 10 0 kra d ESCC
Wafer tes t e ach
Part tested 5 biased + 5 unbiased
Dose rate 0.1 rad/s
Acceptance MIL-STD-750 method 1019
Displacement damage Optional
Agency part number (ex) 5202/001/02
(1)
1. Example of the 2N2222A in LCC-3 gold finish.
ST part number (ex) SOC2222ARHRG
Documents CoC + RVT
DocID16558 Rev 20 11/24
2N2222AHR Radiation hardness assurance
24
Table 8. ESCC 5201/002 post radiation electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 60 V 10 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 3 V 10 nA
V
(BR)CBO
Collector-base
breakd own vo ltage
(I
E
= 0) I
C
= 100 µA 75 V
V
(BR)CEO(1)
1. Pulsed duration = 300 µs, duty cycle £ 2 %
Collector-emitter
breakd own vo ltage
(I
B
= 0)
I
C
= 30 mA
I
C
= 10 mA 40
50 V
V
V
(BR)EBO
Emitter-base
breakd own vo ltage
(I
C
= 0) I
E
= 100 µA 6 V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 0.3 V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 1.2 V
[h
FE
]
(1)
Post irradiation gain
calculation
(2)
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
[17.5]
[37.5]
[50]
[20] 300
Package mechanical data 2N2222AHR
12/24 DocID16558 Rev 20
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Table 9. Product mass summary
Package Mass (g)
UB 0.06
LCC-3 0.06
TO-18 0.40
DocID16558 Rev 20 13/24
2N2222AHR Package mechanical data
24
4.1 UB package information
Figure 10. UB package outline
Package mechanical data 2N2222AHR
14/24 DocID16558 Rev 20
Table 10. UB mechanica l data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.46 0.51 0.56
D 0.56 0.76 0.96
E 0.92 1.02 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.18
I 2.41 2.54 2.67
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.41 0.51 0.61
M 2.46 2.54 2.62
N 1.81 1.91 2.01
r 0.20
r1 0.30
r2 0.56
DocID16558 Rev 20 15/24
2N2222AHR Package mechanical data
24
4.2 LCC-3 package information
Figure 11. LCC-3 package outline
21
3
Package mechanical data 2N2222AHR
16/24 DocID16558 Rev 20
Table 11. LCC-3 mechanical data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.45 0.50 0.56
D 0.60 0.76 0.91
E 0.91 1.01 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.17
I 2.41 2.54 2.66
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.40 0.50 0.60
M 2.46 2.54 2.62
N 1.80 1.90 2.00
R 0.30
DocID16558 Rev 20 17/24
2N2222AHR Package mechanical data
24
4.3 TO-18 package information
Figure 12. TO-18 package outline
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*
+
,
/
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(
%
Package mechanical data 2N2222AHR
18/24 DocID16558 Rev 20
Table 12. TO-18 mechanical data
Dim. mm.
Min. Typ. Max.
A 12.70 13.20 14.20
B 0.41 0.45 0.48
C0.36 0.47
D 4.88 5.33
E 4.63 4.70
F 5.31 5.45
G 2.49 2.54 2.59
H 0.80 0.90 1.00
I 0.95 1.00 1.05
L 42° 45° 48°
2N2222AHR Order codes
DocID16558 Rev 20 19/24
5 Order codes
Table 13. Ordering information
CPN Agency
specification EPPL Quality level Radiation level
(1)
Package Lead finish Marking
(2)
Packing
J2N2222AUB1 - - Engineering
model JANS - UB Gold J2222AUB1 WafflePack
2N2222AUB1 - - Engineering
model ESCC - UB Gold 2N2222AUB1 WafflePack
SOC2222A1 - - Engineering
model ESCC - LCC-3 Gold SOC2222A1 WafflePack
JANSR2N2222AUBG MIL-PRF-
19500/255 - JANSR 100 krad
high and low dose rate UB Gold JSR2222 WafflePack
JANSR2N2222AUBT MIL-PRF-
19500/255 - JANSR 100 krad
high and low dose rate UB Solder Dip JSR2222 WafflePack
JANS2N2222AUBG MIL-PRF-
19500/255 - JANS - UB Gold JS2222 WafflePack
JANS2N2222AUBT MIL-PRF-
19500/255 - JANS - UB Solder Dip JS2222 WafflePack
2N2222ARU BG 5 201/00 2/11R Target ESCC Flight 100 krad - low dose ra te UB Gold 5 20100 211R W af f lePack
2N222 2ARUBT 5201/002 /12R Target ESCC Flight 100 k rad - lo w dose ra te UB So lder Dip 5201002 12R W af fle Pack
2N2222AUB G 5201/00 2/11 Target E SCC Fli ght - UB Gold 520100 211 Waffle Pac k
2N222 2AUB T 5201/002/12 Target E SCC Fli ght - UB Solde r Dip 5201002 12 W affle Pac k
SOC2222ARHRG 5201/002/04R Yes E SCC Flight 100 krad - low dose rate LCC-3 Gold 520100204R Waf flePack
SOC2222AR HR T 5201/002 /05R Yes ESCC Flight 100 krad - lo w dose ra te LCC-3 So lder Dip 520100205R Waf fle Pack
SOC2222AH RG 5201/ 002 /04 Yes ESCC Flight - LCC-3 Gold 520100204 W affle Pac k
SOC2222AH R T 5201/002/05 Yes ESCC Flight - LCC-3 So lde r Dip 5201002 05 W afflePac k
2N2222ARHRG 5201/002/01R Target ESCC Flight 100 krad - lo w dose rate TO-18 Gold 520100201R S trip Pack
2N2222A RHR T 52 01/002 /02R Target ESCC Flight 100 k rad - lo w dose ra te T O-18 Solder Dip 520100202R Strip Pack
Order codes 2N2222AHR
20/24 DocID16558 Rev 20
Contact ST sales office for information about the specific conditions for:
– Products in die form
– Other JANS quality levels
– Tape and reel packing
2N2222AHRG 5201/002/01 - ESCC Flight - TO-18 Gold 520100201 Strip Pack
2N2222AHRT 5201/002/02 - ESCC Flight - TO-18 Solder Dip 520100202 Strip Pack
1. High dose rate as per MIL-PRF-19500 specification group D, subgroup 2 inspection. Low dose rate as per ESCC specification 22900.
2. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date
code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts: ST logo, date code, country of origin (FR), manufacturer
code (CSTM), serial number of the part within the assembly lot.
Table 13. Ordering information (continued )
CPN Agency
specification EPPL Quality level Radiation level
(1)
Package Lead finish Marking
(2)
Packing
DocID16558 Rev 20 21/24
2N2222AHR Shipping details
24
6 Shipping details
6.1 Date code
Date code xyywwz is structured as below table:
6.2 Documentation
Table 14. Date code
xyywwz
EM
(ESCC & JANS) 3
last two digits of
the year week digits lot index in the
week
ESCC
FLIGHT -
JANS
FLIGHT
(diffused in
Singapore)
W
Table 15. Documentation provided for each type of product
Quality lev el Radiation level Document a t ion
Engineering model - -
JANS Flight - Certificate of conformance
JANSR Flight MIL-STD 100krad Certificate of conformance
50 rad/s radiation verification test report
ST 100Krad Certificate of conformance
0.1 rad/s radiation verification test report on each wafer
ESCC Flight
- Certificate of conformance
100 k rad Certificate of conformance
0.1 rad/s radiation verification test report
Revision history 2N2222AHR
22/24 DocID16558 Rev 20
7 Revision history
Table 16. Document revision history
Date Revision Changes
04-Jan-2010 1 Initial release
16-Apr-2010 2 Added Table 1 on page 1
09-Jul-2010 3 Modified: Table 1 on page 1 and Table 12 on page 18
30-Nov-2011 4
– Modified: Table 5 on page 5
– Added: Section 2.3: Electrical characteristics (curves)
– Modified: Table 1 and 2
– Added: Table 2, 11, 12
– Minor text changes in the document title and description on the
cover page.
12-Dec-2011 5 Minor text changes to improve readability
17-Apr-2012 6
Updated:
– Title and description in cover page.
–P
TOT
in Table 2 : Absolute maximum ratings.
– The entire Section 2: Electrical characteristics.
Added:
–Table 3: Thermal data, Section 3: Rad iation hardness assurance
and Table 13: Ordering information.
–Figure 7: JANS saturated turn-on switching time test circuit and
Figure 8: JANS saturated turn-off switching time test circuit.
–Section 6: Shipping details.
19-Apr-2012 7 Updated titles in Figure 7: JANS saturated turn-on switching time
test circuit and Figure 8: JANS saturated turn-off switching time test
circuit.
24-Apr-2012 8 Updated R
thJA
value in
Table 3: Th ermal data.
14-May-2012 9 Updated Table 13: Ordering information.
21-Feb-2013 10 Table 1: De vice summary and Table 13: Ordering informa tio n have
been updated.
Updated tex t in Section 3: Radiation hardness assurance.
04-Apr-2013 11 Inserted Table 7: Radiation summ ary
06-Jun-2 013 12 Updated package name for UB.
18-Sep-2013 13 Table 1: Device summary and Table 13: Ordering info rma tio n have
been updated.
25-Mar-2014 14
Table 1: Device summary and Table 13: Ordering informa tio n have
been updated.
Updated Section 3: Radiation hardness assurance.and Section 4:
Package mechanical data
Inserted Figure 2: Safe operating area for LCC-3 and UB and
Figure 3: S afe operating area for TO-18
DocID16558 Rev 20 23/24
2N2222AHR Revision history
24
01-Apr-2014 15 Modified note in package silhouette on cover page.
29-May-2014 16 Updated Table 1: Device summary and Table 13: Ordering
information.
17-Feb-2015 17 Updated Table 1.: Device summary
Minor text chan ges .
27-Feb-20 15 18 Minor text chan ges
05-May-2015 19 Updated Table 1.: Device summary
Minor text chan ges .
21-Aug-2015 20 Updated: Section 4.3: TO-18 package information
Minor text chan ges
Tabl