AT25DF041A-SH-B - Atmel Corporation

Features

•Single 2.3V - 3.6V or 2.7V - 3.6V Supply

•Serial Peripheral Interface (SPI) Compatible

– Supports SPI Modes 0 and 3

•70 MHz Maximum Clock Frequency

•Flexible, Uniform Erase Architecture

– 4-Kbyte Blocks

– 32-Kbyte Blocks

– 64-Kbyte Blocks

– Full Chip Erase

•Individual Sector Protection with Global Protect/Unprotect Feature

– One 16-Kbyte Top Sector

– Two 8-Kbyte Sectors

– One 32-Kbyte Sector

– Seven 64-Kbyte Sectors

•Hardware Controlled Locking of Protected Sectors via WP pin

•Flexible Programming Options

– Byte/Page Program (1 to 256 Bytes)

– Sequential Program Mode Capability

•Fast Program and Erase Times

– 1.2 ms Typical Page Program (256 Bytes) Time

– 50 ms Typical 4-Kbyte Block Erase Time

– 250 ms Typical 32-Kbyte Block Erase Time

– 400 ms Typical 64-Kbyte Block Erase Time

•Automatic Checking and Reporting of Erase/Program Failures

•JEDEC Standard Manufacturer and Device ID Read Methodology

•Low Power Dissipation

– 5 mA Active Read Current (Typical)

– 15 µA Deep Power-down Current (Typical)

•Endurance: 100,000 Program/Erase Cycles

•Data Retention: 20 Years

•Complies with Full Industrial Temperature Range

•Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

– 8-lead SOIC (150-mil and 208-mil Wide)

– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)

1. Description

The AT25DF041A is a serial interface Flash memory device designed for use in a

wide variety of high-volume consumer-based applications in which program code is

shadowed from Flash memory into embedded or external RAM for execution. The

flexible erase architecture of the AT25DF041A, with its erase granularity as small as

4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional

data storage EEPROM devices.

4-megabit

2.3-volt or

2.7-volt

Minimum

SPI Serial Flash

Memory

AT25DF041A

3668D–DFLASH–9/08

AT25DF041A

The physical sectoring and the erase block sizes of the AT25DF041A have been optimized to

meet the needs of today’s code and data storage applications. By optimizing the size of the

physical sectors and erase blocks, the memory space can be used much more efficiently.

Because certain code modules and data storage segments must reside by themselves in their

own protected sectors, the wasted and unused memory space that occurs with large sectored

and large block erase Flash memory devices can be greatly reduced. This increased memory

space efficiency allows additional code routines and data storage segments to be added while

still maintaining the same overall device density.

The AT25DF041A also offers a sophisticated method for protecting individual sectors against

erroneous or malicious program and erase operations. By providing the ability to individually pro-

tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while

keeping the remaining sectors of the memory array securely protected. This is useful in applica-

tions where program code is patched or updated on a subroutine or module basis, or in

applications where data storage segments need to be modified without running the risk of errant

modifications to the program code segments. In addition to individual sector protection capabili-

ties, the AT25DF041A incorporates Global Protect and Global Unprotect features that allow the

entire memory array to be either protected or unprotected all at once. This reduces overhead

during the manufacturing process since sectors do not have to be unprotected one-by-one prior

to initial programming.

Specifically designed for use in 2.5-volt or 3-volt systems, the AT25DF041A supports read, pro-

gram, and erase operations with a supply voltage range of 2.3V to 3.6V or 2.7V to 3.6V. No

separate voltage is required for programming and erasing.

3668D–DFLASH–9/08

AT25DF041A

2. Pin Descriptions and Pinouts

Table 2-1. Pin Descriptions

Symbol Name and Function

Asserted

State Type

CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the

device will be deselected and normally be placed in standby mode (not Deep Power-down mode),

and the SO pin will be in a high-impedance state. When the device is deselected, data will not be

accepted on the SI pin.

A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition

is required to end an operation. When ending an internally self-timed operation such as a program

or erase cycle, the device will not enter the standby mode until the completion of the operation.

Low Input

SCK

SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of

data to and from the device. Command, address, and input data present on the SI pin is always

latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the

falling edge of SCK.

Input

SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input

including command and address sequences. Data on the SI pin is always latched on the rising

edge of SCK.

Input

SO SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is

always clocked out on the falling edge of SCK. Output

WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer to

section “Protection Commands and Features” on page 15 for more details on protection features

and the WP pin.

The WP pin is internally pulled-high and may be left floating if hardware-controlled protection will

not be used. However, it is recommended that the WP pin also be externally connected to VCC

whenever possible.

Low Input

HOLD

HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or

resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the

SI pin will be ignored, and the SO pin will be in a high-impedance state.

The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold

condition to start. A Hold condition pauses serial communication only and does not have an effect

on internally self-timed operations such as a program or erase cycle. Please refer to section “Hold”

on page 30 for additional details on the Hold operation.

The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be used.

However, it is recommended that the HOLD pin also be externally connected to VCC whenever

possible.

Low Input

VCC

DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.

Operations at invalid VCC voltages may produce spurious results and should not be attempted. Power

GND GROUND: The ground reference for the power supply. GND should be connected to the

system ground. Power

Figure 2-1. 8-SOIC Top View Figure 2-2. 8-UDFN Top View

GND

VCC

HOLD

SCK

GND

VCC

HOLD

SCK

3668D–DFLASH–9/08

AT25DF041A

3. Block Diagram

4. Memory Array

To provide the greatest flexibility, the memory array of the AT25DF041A can be erased in four

levels of granularity including a full chip erase. In addition, the array has been divided into phys-

ical sectors of various sizes, of which each sector can be individually protected from program

and erase operations. The sizes of the physical sectors are optimized for both code and data

storage applications, allowing both code and data segments to reside in their own isolated

regions. Figure 4-1 on page 5 illustrates the breakdown of each erase level as well as the break-

down of each physical sector.

FLASH

MEMORY

ARRAY

Y-GATING

SCK

Y-DECODER

ADDRESS LATCH

X-DECODER

I/O BUFFERS

AND LATCHES

CONTROL AND

PROTECTION LOGIC

SRAM

DATA BUFFER

INTERFACE

CONTROL

AND

LOGIC

3668D–DFLASH–9/08

AT25DF041A

Figure 4-1. Memory Architecture Diagram

4KB 07FFFFh – 07F000h 256 Bytes 07FFFFh – 07FF00h

4KB 07EFFFh – 07E000h 256 Bytes 07FEFFh – 07FE00h

4KB 07DFFFh – 07D000h 256 Bytes 07FDFFh – 07FD00h

4KB 07CFFFh – 07C000h 256 Bytes 07FCFFh – 07FC00h

4KB 07BFFFh – 07B000h 256 Bytes 07FBFFh – 07FB00h

4KB 07AFFFh – 07A000h 256 Bytes 07FAFFh – 07FA00h

4KB 079FFFh – 079000h 256 Bytes 07F9FFh – 07F900h

4KB 078FFFh – 078000h 256 Bytes 07F8FFh – 07F800h

4KB 077FFFh – 077000h 256 Bytes 07F7FFh – 07F700h

4KB 076FFFh – 076000h 256 Bytes 07F6FFh – 07F600h

4KB 075FFFh – 075000h 256 Bytes 07F5FFh – 07F500h

4KB 074FFFh – 074000h 256 Bytes 07F4FFh – 07F400h

4KB 073FFFh – 073000h 256 Bytes 07F3FFh – 07F300h

4KB 072FFFh – 072000h 256 Bytes 07F2FFh – 07F200h

4KB 071FFFh – 071000h 256 Bytes 07F1FFh – 07F100h

4KB 070FFFh – 070000h 256 Bytes 07F0FFh – 07F000h

4KB 06FFFFh – 06F000h 256 Bytes 07EFFFh – 07EF00h

4KB 06EFFFh – 06E000h 256 Bytes 07EEFFh – 07EE00h

4KB 06DFFFh – 06D000h 256 Bytes 07EDFFh – 07ED00h

4KB 06CFFFh – 06C000h 256 Bytes 07ECFFh – 07EC00h

4KB 06BFFFh – 06B000h 256 Bytes 07EBFFh – 07EB00h

4KB 06AFFFh – 06A000h 256 Bytes 07EAFFh – 07EA00h

4KB 069FFFh – 069000h 256 Bytes 07E9FFh – 07E900h

4KB 068FFFh – 068000h 256 Bytes 07E8FFh – 07E800h

4KB 067FFFh – 067000h

4KB 066FFFh – 066000h

4KB 065FFFh – 065000h

4KB 064FFFh – 064000h 256 Bytes 0017FFh – 001700h

4KB 063FFFh – 063000h 256 Bytes 0016FFh – 001600h

4KB 062FFFh – 062000h 256 Bytes 0015FFh – 001500h

4KB 061FFFh – 061000h 256 Bytes 0014FFh – 001400h

4KB 060FFFh – 060000h 256 Bytes 0013FFh – 001300h

256 Bytes 0012FFh – 001200h

256 Bytes 0011FFh – 001100h

256 Bytes 0010FFh – 001000h

4KB 00FFFFh – 00F000h 256 Bytes 000FFFh – 000F00h

4KB 00EFFFh – 00E000h 256 Bytes 000EFFh – 000E00h

4KB 00DFFFh – 00D000h 256 Bytes 000DFFh – 000D00h

4KB 00CFFFh – 00C000h 256 Bytes 000CFFh – 000C00h

4KB 00BFFFh – 00B000h 256 Bytes 000BFFh – 000B00h

4KB 00AFFFh – 00A000h 256 Bytes 000AFFh – 000A00h

4KB 009FFFh – 009000h 256 Bytes 0009FFh – 000900h

4KB 008FFFh – 008000h 256 Bytes 0008FFh – 000800h

4KB 007FFFh – 007000h 256 Bytes 0007FFh – 000700h

4KB 006FFFh – 006000h 256 Bytes 0006FFh – 000600h

4KB 005FFFh – 005000h 256 Bytes 0005FFh – 000500h

4KB 004FFFh – 004000h 256 Bytes 0004FFh – 000400h

4KB 003FFFh – 003000h 256 Bytes 0003FFh – 000300h

4KB 002FFFh – 002000h 256 Bytes 0002FFh – 000200h

4KB 001FFFh – 001000h 256 Bytes 0001FFh – 000100h

4KB 000FFFh – 000000h 256 Bytes 0000FFh – 000000h

64KB

(Sector 0)

32KB

• • •

64KB

32KB

• • •

64KB

32KB

• • •

64KB

(Sector 6)

64KB

16KB

(Sector 10)

8KB

(Sector 9)

8KB

(Sector 8)

32KB

(Sector 7)

Internal Sectoring fo

64KB 32KB 4KB 1-256 Byte

Sector Protection Block Erase Block Erase Block ErasePage Program

Function (D8h Command) (52h Command) (20h Command) (02h Command)

Block Erase Detail Page Program Detail

Page AddressBlock Address

RangeRange

3668D–DFLASH–9/08

AT25DF041A

5. Device Operation

The AT25DF041A is controlled by a set of instructions that are sent from a host controller, com-

monly referred to as the SPI Master. The SPI Master communicates with the AT25DF041A via

the SPI bus which is comprised of four signal lines: Chip Select (CS), Serial Clock (SCK), Serial

Input (SI), and Serial Output (SO).

The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode

differing in respect to the SCK polarity and phase and how the polarity and phase control the

flow of data on the SPI bus. The AT25DF041A supports the two most common modes, SPI

modes 0 and 3. The only difference between SPI modes 0 and 3 is the polarity of the SCK signal

when in the inactive state (when the SPI Master is in standby mode and not transferring any

data). With SPI modes 0 and 3, data is always latched in on the rising edge of SCK and always

output on the falling edge of SCK.

Figure 5-1. SPI Mode 0 and 3

6. Commands and Addressing

A valid instruction or operation must always be started by first asserting the CS pin. After the CS

pin has been asserted, the SPI Master must then clock out a valid 8-bit opcode on the SPI bus.

Following the opcode, instruction dependent information such as address and data bytes would

then be clocked out by the SPI Master. All opcode, address, and data bytes are transferred with

the most significant bit (MSB) first. An operation is ended by deasserting the CS pin.

Opcodes not supported by the AT25DF041A will be ignored by the device and no operation will

be started. The device will continue to ignore any data presented on the SI pin until the start of

the next operation (CS pin being deasserted and then reasserted). In addition, if the CS pin is

deasserted before complete opcode and address information is sent to the device, then no oper-

ation will be performed and the device will simply return to the idle state and wait for the next

operation.

Addressing of the device requires a total of three bytes of information to be sent, representing

address bits A23 - A0. Since the upper address limit of the AT25DF041A memory array is

07FFFFh, address bits A23 - A19 are always ignored by the device.

SCK

MSB LSB

3668D–DFLASH–9/08

AT25DF041A

Note: 1. Three address bytes are only required for the first operation to designate the address to start programming at. Afterwards,

the internal address counter automatically increments, so subsequent Sequential Program Mode operations only require

clocking in of the opcode and the data byte until the Sequential Program Mode has been exited.

Table 6-1. Command Listing

Command Opcode Address Bytes Dummy Bytes Data Bytes

Read Commands

Read Array 0Bh 0000 1011 3 1 1+

Read Array (Low Frequency) 03h 0000 0011 3 0 1+

Program and Erase Commands

Block Erase (4 Kbytes) 20h 0010 0000 3 0 0

Block Erase (32 Kbytes) 52h 0101 0010 3 0 0

Block Erase (64 Kbytes) D8h 1101 1000 3 0 0

Chip Erase 60h 0110 0000 0 0 0

C7h 1100 0111 0 0 0

Byte/Page Program (1 to 256 Bytes) 02h 0000 0010 3 0 1+

Sequential Program Mode ADh 1010 1101 3, 0(1) 01

AFh 1010 1111 3, 0(1) 01

Protection Commands

Write Enable 06h 0000 0110 0 0 0

Write Disable 04h 0000 0100 0 0 0

Protect Sector 36h 0011 0110 3 0 0

Unprotect Sector 39h 0011 1001 3 0 0

Global Protect/Unprotect Use Write Status Register command

Read Sector Protection Registers 3Ch 0011 1100 3 0 1+

Status Register Commands

Read Status Register 05h 0000 0101 0 0 1+

Write Status Register 01h 0000 0001 0 0 1

Miscellaneous Commands

Read Manufacturer and Device ID 9Fh 1001 1111 0 0 1 to 4

Deep Power-down B9h 1011 1001 0 0 0

Resume from Deep Power-down ABh 1010 1011 0 0 0

3668D–DFLASH–9/08

AT25DF041A

7. Read Commands

7.1 Read Array

The Read Array command can be used to sequentially read a continuous stream of data from

the device by simply providing the SCK signal once the initial starting address has been speci-

fied. The device incorporates an internal address counter that automatically increments on every

clock cycle.

Two opcodes, 0Bh and 03h, can be used for the Read Array command. The use of each opcode

depends on the maximum SCK frequency that will be used to read data from the device. The

0Bh opcode can be used at any SCK frequency up to the maximum specified by fSCK. The 03h

opcode can be used for lower frequency read operations up to the maximum specified by fRDLF.

To perform the Read Array operation, the CS pin must first be asserted and the appropriate

opcode (0Bh or 03h) must be clocked into the device. After the opcode has been clocked in, the

three address bytes must be clocked in to specify the starting address location of the first byte to

read within the memory array. If the 0Bh opcode is used, then one don't care byte must also be

clocked in after the three address bytes.

After the three address bytes (and the one don't care byte if using opcode 0Bh) have been

clocked in, additional clock cycles will result in serial data being output on the SO pin. The data

is always output with the MSB of a byte first. When the last byte (07FFFFh) of the memory array

has been read, the device will continue reading back at the beginning of the array (000000h).

No delays will be incurred when wrapping around from the end of the array to the beginning

of the array.

Deasserting the CS pin will terminate the read operation and put the SO pin into a high-imped-

ance state. The CS pin can be deasserted at any time and does not require that a full byte

of data be read.

Figure 7-1. Read Array – 0Bh Opcode

Figure 7-2. Read Array – 03h Opcode

SCK

MSB MSB

2310

00001011

675410119812 394243414037 3833 36353431 3229 30 44 47 484645

OPCODE

AAAA AAAA A

MSB

XXXXXXXX

MSB MSB

DDDDDDDDDD

ADDRESS BITS A23-A0 DON'T CARE

DATA BYTE 1

HIGH-IMPEDANCE

SCK

MSB MSB

2310

00000011

675410119812 373833 36353431 3229 30 39 40

OPCODE

AAAA AAAA A

MSB MSB

DDDDDDDDDD

ADDRESS BITS A23-A0

DATA BYTE 1

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

8. Program and Erase Commands

8.1 Byte/Page Program

The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of

data to be programmed into previously erased memory locations. An erased memory location is

one that has all eight bits set to the logical “1” state (a byte value of FFh). Before a Byte/Page

Program command can be started, the Write Enable command must have been previously

issued to the device (see “Write Enable” on page 15 command description) to set the Write

Enable Latch (WEL) bit of the Status Register to a logical “1” state.

To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device

followed by the three address bytes denoting the first byte location of the memory array to begin

programming at. After the address bytes have been clocked in, data can then be clocked into the

device and will be stored in an internal buffer.

If the starting memory address denoted by A23 - A0 does not fall on an even 256-byte page

boundary (A7 - A0 are not all 0’s), then special circumstances regarding which memory locations

will be programmed will apply. In this situation, any data that is sent to the device that goes

beyond the end of the page will wrap around back to the beginning of the same page. For exam-

ple, if the starting address denoted by A23 - A0 is 0000FEh, and three bytes of data are sent to

the device, then the first two bytes of data will be programmed at addresses 0000FEh and

0000FFh while the last byte of data will be programmed at address 000000h. The remaining

bytes in the page (addresses 000001h through 0000FDh) will be unaffected and will not change.

In addition, if more than 256 bytes of data are sent to the device, then only the last 256 bytes

sent will be latched into the internal buffer.

When the CS pin is deasserted, the device will take the data stored in the internal buffer and pro-

gram it into the appropriate memory array locations based on the starting address specified by

A23 - A0 and the number of data bytes sent to the device. If less than 256 bytes of data were

sent to the device, then the remaining bytes within the page will not be altered. The program-

ming of the data bytes is internally self-timed and should take place in a time of tPP.

The three address bytes and at least one complete byte of data must be clocked into the device

before the CS pin is deasserted, and the CS pin must be deasserted on even byte boundaries

(multiples of eight bits); otherwise, the device will abort the operation and no data will be pro-

grammed into the memory array. In addition, if the address specified by A23 - A0 points to a

memory location within a sector that is in the protected state (see section “Protect Sector” on

page 16), then the Byte/Page Program command will not be executed, and the device will return

to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be

reset back to the logical “0” state if the program cycle aborts due to an incomplete address being

sent, an incomplete byte of data being sent, or because the memory location to be programmed

is protected.

While the device is programming, the Status Register can be read and will indicate that the

device is busy. For faster throughput, it is recommended that the Status Register be polled

rather than waiting the tBP or tPP time to determine if the data bytes have finished programming.

At some point before the program cycle completes, the WEL bit in the Status Register will be

reset back to the logical “0” state.

The device also incorporates an intelligent programming algorithm that can detect when a byte

location fails to program properly. If a programming error arises, it will be indicated by the EPE

bit in the Status Register.

3668D–DFLASH–9/08

AT25DF041A

The Byte/Page Program mode is the default programming mode after the device powers-up or

resumes from a device reset.

Figure 8-1. Byte Program

Figure 8-2. Page Program

8.2 Sequential Program Mode

The Sequential Program Mode improves throughput over the Byte/Page Program command

when the Byte/Page Program command is used to program single bytes only into consecutive

address locations. For example, some systems may be designed to program only a single byte

of information at a time and cannot utilize a buffered Page Program operation due to design

restrictions. In such a case, the system would normally have to perform multiple Byte Program

operations in order to program data into sequential memory locations. This approach can add

considerable system overhead and SPI bus traffic.

The Sequential Programming Mode helps reduce system overhead and bus traffic by incorporat-

ing an internal address counter that keeps track of the byte location to program, thereby

eliminating the need to supply an address sequence to the device for every byte to program.

When using the Sequential Program mode, all address locations to be programmed must be in

the erased state. Before the Sequential Program mode can first be entered, the Write Enable

command must have been previously issued to the device to set the WEL bit of the Status Reg-

ister to a logical “1” state.

To start the Sequential Program Mode, the CS pin must first be asserted, and either an opcode

of ADh or AFh must be clocked into the device. For the first program cycle, three address bytes

must be clocked in after the opcode to designate the first byte location to program. After the

address bytes have been clocked in, the byte of data to be programmed can be sent to the

SCK

MSB MSB

2310

00000010

675410119812 3937 3833 36353431 3229 30

OPCODE

HIGH-IMPEDANCE

AAAA AAAA A

MSB

DDDDDDDD

ADDRESS BITS A23-A0 DATA IN

SCK

MSB MSB

2310

00000010

6754983937 3833 36353431 3229 30

OPCODE

HIGH-IMPEDANCE

AA AAAA

MSB

DDDDDDDD

ADDRESS BITS A23-A0 DATA IN BYTE 1

MSB

DDDDDDDD

DATA IN BYTE n

3668D–DFLASH–9/08

AT25DF041A

device. Deasserting the CS pin will start the internally self-timed program operation, and the byte

of data will be programmed into the memory location specified by A23 - A0.

After the first byte has been successfully programmed, a second byte can be programmed by

simply reasserting the CS pin, clocking in the ADh or AFh opcode, and then clocking in the next

byte of data. When the CS pin is deasserted, the second byte of data will be programmed into

the next sequential memory location. The process would be repeated for any additional bytes.

There is no need to reissue the Write Enable command once the Sequential Program Mode has

been entered.

When the last desired byte has been programmed into the memory array, the Sequential

Program Mode operation can be terminated by reasserting the CS pin and sending the

Write Disable command to the device to reset the WEL bit in the Status Register back to the

logical “0” state.

If more than one byte of data is ever clocked in during each program cycle, then only the last

byte of data sent on the SI pin will be stored in the internal latches. The programming of each

byte is internally self-timed and should take place in a time of tBP. For each program cycle, a

complete byte of data must be clocked into the device before the CS pin is deasserted, and the

CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the

device will abort the operation, the byte of data will not be programmed into the memory array,

and the WEL bit in the Status Register will be reset back to the logical “0” state.

If the address initially specified by A23 - A0 points to a memory location within a sector that is in

the protected state, then the Sequential Program Mode command will not be executed, and the

device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Sta-

tus Register will also be reset back to the logical “0” state.

There is no address wrapping when using the Sequential Program Mode. Therefore, when the

last byte (07FFFFh) of the memory array has been programmed, the device will automatically

exit the Sequential Program mode and reset the WEL bit in the Status Register back to the logi-

cal “0” state. In addition, the Sequential Program mode will not automatically skip over protected

sectors; therefore, once the highest unprotected memory location in a programming sequence

has been programmed, the device will automatically exit the Sequential Program mode and

reset the WEL bit in the Status Register. For example, if Sector 1 was protected and Sector 0

was currently being programmed, once the last byte of Sector 0 was programmed, the Sequen-

tial Program mode would automatically end. To continue programming with Sector 2, the

Sequential Program mode would have to be restarted by supplying the ADh or AFh opcode, the

three address bytes, and the first byte of Sector 2 to program.

While the device is programming a byte, the Status Register can be read and will indicate that

the device is busy. For faster throughput, it is recommended that the Status Register be polled at

the end of each program cycle rather than waiting the tBP time to determine if the byte has fin-

ished programming before starting the next Sequential Program mode cycle.

The device also incorporates an intelligent programming algorithm that can detect when a byte

location fails to program properly. If a programming error arises, it will be indicated by the EPE

bit in the Status Register.

3668D–DFLASH–9/08

AT25DF041A

Figure 8-3. Sequential Program Mode – Status Register Polling

Figure 8-4. Sequential Program Mode – Waiting Maximum Byte Program Time

8.3 Block Erase

A block of 4, 32, or 64 Kbytes can be erased (all bits set to the logical “1” state) in a single oper-

ation by using one of three different opcodes for the Block Erase command. An opcode of 20h is

used for a 4-Kbyte erase, an opcode of 52h is used for a 32-Kbyte erase, and an opcode of D8h

is used for a 64-Kbyte erase. Before a Block Erase command can be started, the Write Enable

command must have been previously issued to the device to set the WEL bit of the Status Reg-

ister to a logical “1” state.

To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h,

52h or D8h) must be clocked into the device. After the opcode has been clocked in, the three

address bytes specifying an address within the 4-, 32-, or 64-Kbyte block to be erased must be

clocked in. Any additional data clocked into the device will be ignored. When the CS pin is deas-

serted, the device will erase the appropriate block. The erasing of the block is internally self-

timed and should take place in a time of tBLKE.

Since the Block Erase command erases a region of bytes, the lower order address bits do not

need to be decoded by the device. Therefore, for a 4-Kbyte erase, address bits A11 - A0 will be

ignored by the device and their values can be either a logical “1” or “0”. For a 32-Kbyte erase,

address bits A14 - A0 will be ignored, and for a 64-Kbyte erase, address bits A15 - A0 will be

ignored by the device. Despite the lower order address bits not being decoded by the device, the

complete three address bytes must still be clocked into the device before the CS pin is deas-

serted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);

otherwise, the device will abort the operation and no erase operation will be performed.

Opcode

23-16

15-8

7-0

05hData

HIGH-IMPEDANCE

Opcode

Data 05h 04h

Opcode

Data 05h

STATUS REGISTER

DATA

STATUS REGISTER

DATA

STATUS REGISTER

DATA

Seqeuntial Program Mode

Command

First Address to Program

Status Register Read

Command

Write Disable

Command

Seqeuntial Program Mode

Command

Seqeuntial Program Mode

Command

Note: Each transition shown for SI represents one byte (8 bits)

Opcode

23-16

15-8

7-0

Data

HIGH-IMPEDANCE

Opcode

Data 04h

Opcode

Data

Seqeuntial Program Mode

Command

First Address to Program

Write Disable

Command

Seqeuntial Program Mode

Command

Seqeuntial Program Mode

Command

Note: Each transition shown for SI represents one byte (8 bits)

3668D–DFLASH–9/08

AT25DF041A

If the address specified by A23 - A0 points to a memory location within a sector that is in the pro-

tected state, then the Block Erase command will not be executed, and the device will return to

the idle state once the CS pin has been deasserted. In addition, with the larger Block Erase

sizes of 32K and 64 Kbytes, more than one physical sector may be erased (e.g. sectors 18

through 15) at one time. Therefore, in order to erase a larger block that may span more than one

sector, all of the sectors in the span must be in the unprotected state. If one of the physical sec-

tors within the span is in the protected state, then the device will ignore the Block Erase

command and will return to the idle state once the CS pin is deasserted.

The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle

aborts due to an incomplete address being sent or because a memory location within the region

to be erased is protected.

While the device is executing a successful erase cycle, the Status Register can be read and will

indicate that the device is busy. For faster throughput, it is recommended that the Status Regis-

ter be polled rather than waiting the tBLKE time to determine if the device has finished erasing. At

some point before the erase cycle completes, the WEL bit in the Status Register will be reset

back to the logical “0” state.

The device also incorporates an intelligent erase algorithm that can detect when a byte location

fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status

Figure 8-5. Block Erase

SCK

MSB MSB

2310

CCCCCCCC

675410119812 3129 3027 2826

OPCODE

AAAA AAAA A A A A

ADDRESS BITS A23-A0

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

8.4 Chip Erase

The entire memory array can be erased in a single operation by using the Chip Erase command.

Before a Chip Erase command can be started, the Write Enable command must have been pre-

viously issued to the device to set the WEL bit of the Status Register to a logical “1” state.

Two opcodes, 60h and C7h, can be used for the Chip Erase command. There is no difference in

device functionality when utilizing the two opcodes, so they can be used interchangeably. To

perform a Chip Erase, one of the two opcodes (60h or C7h) must be clocked into the device.

Since the entire memory array is to be erased, no address bytes need to be clocked into the

device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted,

the device will erase the entire memory array. The erasing of the device is internally self-timed

and should take place in a time of tCHPE.

The complete opcode must be clocked into the device before the CS pin is deasserted, and the

CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no

erase will be performed. In addition, if any sector of the memory array is in the protected state,

then the Chip Erase command will not be executed, and the device will return to the idle state

once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to

the logical “0” state if a sector is in the protected state.

While the device is executing a successful erase cycle, the Status Register can be read and will

indicate that the device is busy. For faster throughput, it is recommended that the Status Regis-

ter be polled rather than waiting the tCHPE time to determine if the device has finished erasing. At

some point before the erase cycle completes, the WEL bit in the Status Register will be reset

back to the logical “0” state.

The device also incorporates an intelligent erase algorithm that can detect when a byte location

fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status

Figure 8-6. Chip Erase

SCK

MSB

2310

CCCCCCCC

6754

OPCODE

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

9. Protection Commands and Features

9.1 Write Enable

The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Regis-

ter to a logical “1” state. The WEL bit must be set before a program, erase, Protect Sector,

Unprotect Sector, or Write Status Register command can be executed. This makes the issuance

of these commands a two step process, thereby reducing the chances of a command being

accidentally or erroneously executed. If the WEL bit in the Status Register is not set prior to the

issuance of one of these commands, then the command will not be executed.

To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h

must be clocked into the device. No address bytes need to be clocked into the device, and any

data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in

the Status Register will be set to a logical “1”. The complete opcode must be clocked into the

device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte

boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of

the WEL bit will not change.

Figure 9-1. Write Enable

9.2 Write Disable

The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Reg-

ister to the logical “0” state. With the WEL bit reset, all program, erase, Protect Sector, Unprotect

Sector, and Write Status Register commands will not be executed. The Write Disable command

is also used to exit the Sequential Program Mode. Other conditions can also cause the WEL bit

to be reset; for more details, refer to the WEL bit section of the Status Register description.

To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h

must be clocked into the device. No address bytes need to be clocked into the device, and any

data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in

the Status Register will be reset to a logical “0”. The complete opcode must be clocked into the

device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte

boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of

the WEL bit will not change.

SCK

MSB

2310

00000110

6754

OPCODE

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

Figure 9-2. Write Disable

9.3 Protect Sector

Every physical sector of the device has a corresponding single-bit Sector Protection Register

that is used to control the software protection of a sector. Upon device power-up or after a

device reset, each Sector Protection Register will default to the logical “1” state indicating that all

sectors are protected and cannot be programmed or erased.

Issuing the Protect Sector command to a particular sector address will set the corresponding

Sector Protection Register to the logical “1” state. The following table outlines the two states of

the Sector Protection Registers.

Before the Protect Sector command can be issued, the Write Enable command must have been

previously issued to set the WEL bit in the Status Register to a logical “1”. To issue the Protect

Sector command, the CS pin must first be asserted and the opcode of 36h must be clocked into

the device followed by three address bytes designating any address within the sector to be

locked. Any additional data clocked into the device will be ignored. When the CS pin is deas-

serted, the Sector Protection Register corresponding to the physical sector addressed by

A23 - A0 will be set to the logical “1” state, and the sector itself will then be protected from

program and erase operations. In addition, the WEL bit in the Status Register will be reset back

to the logical “0” state.

The complete three address bytes must be clocked into the device before the CS pin is deas-

serted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);

otherwise, the device will abort the operation, the state of the Sector Protection Register will be

unchanged, and the WEL bit in the Status Register will be reset to a logical “0”.

As a safeguard against accidental or erroneous protecting or unprotecting of sectors, the Sector

Protection Registers can themselves be locked from updates by using the SPRL (Sector Protec-

tion Registers Locked) bit of the Status Register (please refer to the Status Register description

for more details). If the Sector Protection Registers are locked, then any attempts to issue the

Protect Sector command will be ignored, and the device will reset the WEL bit in the Status Reg-

ister back to a logical “0” and return to the idle state once the CS pin has been deasserted.

SCK

MSB

2310

00000100

6754

OPCODE

HIGH-IMPEDANCE

Table 9-1. Sector Protection Register Values

Value Sector Protection Status

0 Sector is unprotected and can be programmed and erased.

1 Sector is protected and cannot be programmed or erased. This is the default state.

3668D–DFLASH–9/08

AT25DF041A

Figure 9-3. Protect Sector

9.4 Unprotect Sector

Issuing the Unprotect Sector command to a particular sector address will reset the correspond-

ing Sector Protection Register to the logical “0” state (see Table 9-1 for Sector Protection

tection Register that is used to control the software protection of a sector.

Before the Unprotect Sector command can be issued, the Write Enable command must have

been previously issued to set the WEL bit in the Status Register to a logical “1”. To issue the

Unprotect Sector command, the CS pin must first be asserted and the opcode of 39h must be

clocked into the device. After the opcode has been clocked in, the three address bytes designat-

ing any address within the sector to be unlocked must be clocked in. Any additional data clocked

into the device after the address bytes will be ignored. When the CS pin is deasserted, the Sec-

tor Protection Register corresponding to the sector addressed by A23 - A0 will be reset to the

logical “0” state, and the sector itself will be unprotected. In addition, the WEL bit in the Status

The complete three address bytes must be clocked into the device before the CS pin is deas-

serted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);

otherwise, the device will abort the operation, the state of the Sector Protection Register will be

unchanged, and the WEL bit in the Status Register will be reset to a logical “0”.

As a safeguard against accidental or erroneous locking or unlocking of sectors, the Sector Pro-

tection Registers can themselves be locked from updates by using the SPRL (Sector Protection

Registers Locked) bit of the Status Register (please refer to the Status Register description for

more details). If the Sector Protection Registers are locked, then any attempts to issue the

Unprotect Sector command will be ignored, and the device will reset the WEL bit in the Status

Figure 9-4. Unprotect Sector

SCK

MSB MSB

2310

00110110

675410119812 3129 3027 2826

OPCODE

AAAA AAAA A A A A

ADDRESS BITS A23-A0

HIGH-IMPEDANCE

SCK

MSB MSB

2310

00111001

675410119812 3129 3027 2826

OPCODE

AAAA AAAA A A A A

ADDRESS BITS A23-A0

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

9.5 Global Protect/Unprotect

The Global Protect and Global Unprotect features can work in conjunction with the Protect Sec-

tor and Unprotect Sector functions. For example, a system can globally protect the entire

memory array and then use the Unprotect Sector command to individually unprotect certain sec-

tors and individually reprotect them later by using the Protect Sector command. Likewise, a

system can globally unprotect the entire memory array and then individually protect certain sec-

tors as needed.

Performing a Global Protect or Global Unprotect is accomplished by writing a certain combina-

tion of data to the Status Register using the Write Status Register command (see “Write Status

mand is also used to modify the SPRL (Sector Protection Registers Locked) bit to control

hardware and software locking.

To perform a Global Protect, the appropriate WP pin and SPRL conditions must be met, and the

system must write a logical “1” to bits 5, 4, 3, and 2 of the Status Register. Conversely, to per-

form a Global Unprotect, the same WP and SPRL conditions must be met but the system must

write a logical “0” to bits 5, 4, 3, and 2 of the Status Register. Table 9-2 details the conditions

necessary for a Global Protect or Global Unprotect to be performed.

3668D–DFLASH–9/08

AT25DF041A

Essentially, if the SPRL bit of the Status Register is in the logical “0” state (Sector Protection

Registers are not locked), then writing a 00h to the Status Register will perform a Global Unpro-

tect without changing the state of the SPRL bit. Similarly, writing a 7Fh to the Status Register will

perform a Global Protect and keep the SPRL bit in the logical “0” state. The SPRL bit can, of

course, be changed to a logical “1” by writing an FFh if software-locking or hardware-locking is

desired along with the Global Protect.

Table 9-2. Valid SPRL and Global Protect/Unprotect Conditions

State

Current

SPRL

Value

New

Write Status

Protection Operation

New

SPRL

Value

Bit

7 6 5 4 3 2 1 0

0 x 0 0 0 0 x x

0 x 0 0 0 1 x x

↕

0 x 1 1 1 0 x x

0 x 1 1 1 1 x x

1 x 0 0 0 0 x x

1 x 0 0 0 1 x x

↕

1 x 1 1 1 0 x x

1 x 1 1 1 1 x x

Global Unprotect – all Sector Protection Registers reset to 0

No change to current protection.

Global Protect – all Sector Protection Registers set to 1

Global Unprotect – all Sector Protection Registers reset to 0

No change to current protection.

Global Protect – all Sector Protection Registers set to 1

0 1 x x x x x x x x

No change to the current protection level. All sectors currently

protected will remain protected and all sectors currently unprotected

will remain unprotected.

The Sector Protection Registers are hard-locked and cannot be

changed when the WP pin is LOW and the current state of SPRL is 1.

Therefore, a Global Protect/Unprotect will not occur. In addition, the

SPRL bit cannot be changed (the WP pin must be HIGH in order to

change SPRL back to a 0).

0 x 0 0 0 0 x x

0 x 0 0 0 1 x x

↕

0 x 1 1 1 0 x x

0 x 1 1 1 1 x x

1 x 0 0 0 0 x x

1 x 0 0 0 1 x x

↕

1 x 1 1 1 0 x x

1 x 1 1 1 1 x x

Global Unprotect – all Sector Protection Registers reset to 0

No change to current protection.

Global Protect – all Sector Protection Registers set to 1

Global Unprotect – all Sector Protection Registers reset to 0

No change to current protection.

Global Protect – all Sector Protection Registers set to 1

0 x 0 0 0 0 x x

0 x 0 0 0 1 x x

↕

0 x 1 1 1 0 x x

0 x 1 1 1 1 x x

1 x 0 0 0 0 x x

1 x 0 0 0 1 x x

↕

1 x 1 1 1 0 x x

1 x 1 1 1 1 x x

No change to the current protection level. All sectors

currently protected will remain protected, and all sectors

currently unprotected will remain unprotected.

The Sector Protection Registers are soft-locked and cannot

be changed when the current state of SPRL is 1. Therefore,

a Global Protect/Unprotect will not occur. However, the

SPRL bit can be changed back to a 0 from a 1 since the WP

pin is HIGH. To perform a Global Protect/Unprotect, the

Write Status Register command must be issued again after

the SPRL bit has been changed from a 1 to a 0.

3668D–DFLASH–9/08

AT25DF041A

If the desire is to only change the SPRL bit without performing a Global Protect or Global Unpro-

tect, then the system can simply write a 0Fh to the Status Register to change the SPRL bit from

a logical “1” to a logical “0” provided the WP pin is deasserted. Likewise, the system can write an

F0h to change the SPRL bit from a logical “0” to a logical “1” without affecting the current sector

protection status (no changes will be made to the Sector Protection Registers).

When writing to the Status Register, bits 5, 4, 3, and 2 will not actually be modified but will be

decoded by the device for the purposes of the Global Protect and Global Unprotect functions.

Only bit 7, the SPRL bit, will actually be modified. Therefore, when reading the Status Register,

bits 5, 4, 3, and 2 will not reflect the values written to them but will instead indicate the status of

the WP pin and the sector protection status. Please refer to the “Read Status Register” section

and Table 10-1 on page 23 for details on the Status Register format and what values can be

read for bits 5, 4, 3, and 2.

9.6 Read Sector Protection Registers

The Sector Protection Registers can be read to determine the current software protection status

of each sector. Reading the Sector Protection Registers, however, will not determine the status

of the WP pin.

To read the Sector Protection Register for a particular sector, the CS pin must first be asserted

and the opcode of 3Ch must be clocked in. Once the opcode has been clocked in, three address

bytes designating any address within the sector must be clocked in. After the last address byte

has been clocked in, the device will begin outputting data on the SO pin during every subse-

quent clock cycle. The data being output will be a repeating byte of either FFh or 00h to denote

the value of the appropriate Sector Protection Register.

Deasserting the CS pin will terminate the read operation and put the SO pin into a high-imped-

ance state. The CS pin can be deasserted at any time and does not require that a full byte of

data be read.

In addition to reading the individual Sector Protection Registers, the Software Protection Status

(SWP) bit in the Status Register can be read to determine if all, some, or none of the sectors are

software protected (refer to the “Status Register Commands” on page 23 for more details).

Figure 9-5. Read Sector Protection Register

Table 9-3. Read Sector Protection Register – Output Data

Output Data Sector Protection Register Value

00h Sector Protection Register value is 0 (sector is unprotected).

FFh Sector Protection Register value is 1 (sector is protected).

SCK

MSB MSB

2310

00111100

675410119812 373833 36353431 3229 30 39 40

OPCODE

AAAA AAAA A

MSB MSB

DDDDDDDDDD

ADDRESS BITS A23-A0

DATA BYTE

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

9.7 Protected States and the Write Protect (WP) Pin

The WP pin is not linked to the memory array itself and has no direct effect on the protection sta-

tus of the memory array. Instead, the WP pin, in conjunction with the SPRL (Sector Protection

Registers Locked) bit in the Status Register, is used to control the hardware locking mechanism

of the device. For hardware locking to be active, two conditions must be met – the WP pin must

be asserted and the SPRL bit must be in the logical “1” state.

When hardware locking is active, the Sector Protection Registers are locked and the SPRL bit

itself is also locked. Therefore, sectors that are protected will be locked in the protected state,

and sectors that are unprotected will be locked in the unprotected state. These states cannot be

changed as long as hardware locking is active, so the Protect Sector, Unprotect Sector, and

Write Status Register commands will be ignored. In order to modify the protection status of a

sector, the WP pin must first be deasserted, and the SPRL bit in the Status Register must be

reset back to the logical “0” state using the Write Status Register command. When resetting the

SPRL bit back to a logical “0”, it is not possible to perform a Global Protect or Global Unprotect

at the same time since the Sector Protection Registers remain soft-locked until after the Write

Status Register command has been executed.

If the WP pin is permanently connected to GND, then once the SPRL bit is set to a logical “1”,

the only way to reset the bit back to the logical “0” state is to power-cycle or reset the device.

This allows a system to power-up with all sectors software protected but not hardware locked.

Therefore, sectors can be unprotected and protected as needed and then hardware locked at a

later time by simply setting the SPRL bit in the Status Register.

When the WP pin is deasserted, or if the WP pin is permanently connected to VCC, the SPRL bit

in the Status Register can still be set to a logical “1” to lock the Sector Protection Registers. This

provides a software locking ability to prevent erroneous Protect Sector or Unprotect Sector com-

mands from being processed. When changing the SPRL bit to a logical “1” from a logical “0”, it is

also possible to perform a Global Protect or Global Unprotect at the same time by writing the

appropriate values into bits 5, 4, 3, and 2 of the Status Register.

Tables 9-4 and 9-5 detail the various protection and locking states of the device.

Note: 1. “n” represents a sector number

Table 9-4. Sector Protection Register States

Sector Protection Register

n(1)

Sector

n(1)

(Don't Care)

0 Unprotected

1Protected

3668D–DFLASH–9/08

AT25DF041A

Table 9-5. Hardware and Software Locking

WP SPRL Locking SPRL Change Allowed Sector Protection Registers

0 0 Can be modified from 0 to 1

Unlocked and modifiable using

the Protect and Unprotect Sector

commands. Global Protect and

Unprotect can also be performed.

Hardware

Locked Locked

Locked in current state. Protect

and Unprotect Sector commands

will be ignored. Global Protect and

Unprotect cannot be performed.

1 0 Can be modified from 0 to 1

Unlocked and modifiable using the

Protect and Unprotect Sector

commands. Global Protect and

Unprotect can also be performed.

Software

Locked Can be modified from 1 to 0

Locked in current state. Protect and

Unprotect Sector commands will be

ignored. Global Protect and Unprotect

cannot be performed.

3668D–DFLASH–9/08

AT25DF041A

10. Status Register Commands

10.1 Read Status Register

The Status Register can be read to determine the device's ready/busy status, as well as the sta-

tus of many other functions such as Hardware Locking and Software Protection. The Status

operation.

To read the Status Register, the CS pin must first be asserted and the opcode of 05h must be

clocked into the device. After the last bit of the opcode has been clocked in, the device will begin

outputting Status Register data on the SO pin during every subsequent clock cycle. After the last

bit (bit 0) of the Status Register has been clocked out, the sequence will repeat itself starting

again with bit 7 as long as the CS pin remains asserted and the SCK pin is being pulsed. The

data in the Status Register is constantly being updated, so each repeating sequence will output

new data.

Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin

into a high-impedance state. The CS pin can be deasserted at any time and does not require

that a full byte of data be read.

Notes: 1. Only bit 7 of the Status Register will be modified when using the Write Status Register command.

2. R/W = Readable and writable

R = Readable only

Table 10-1. Status Register Format

Bit(1) Name Type(2) Description

7 SPRL Sector Protection Registers Locked R/W 0 Sector Protection Registers are unlocked (default).

1 Sector Protection Registers are locked.

6 SPM Sequential Program Mode Status R 0 Byte/Page Programming Mode (default).

1 Sequential Programming Mode entered.

5 EPE Erase/Program Error R 0 Erase or program operation was successful.

1 Erase or program error detected.

4 WPP Write Protect (WP) Pin Status R 0WP

is asserted.

1WP

is deasserted.

3:2 SWP Software Protection Status R

00 All sectors are software unprotected (all Sector

Protection Registers are 0).

Some sectors are software protected. Read individual

Sector Protection Registers to determine which

sectors are protected.

10 Reserved for future use.

11 All sectors are software protected (all Sector

Protection Registers are 1 – default).

1 WEL Write Enable Latch Status R 0 Device is not write enabled (default).

1 Device is write enabled.

0 RDY/BSY Ready/Busy Status R 0 Device is ready.

1 Device is busy with an internal operation.

3668D–DFLASH–9/08

AT25DF041A

10.1.1 SPRL Bit

The SPRL bit is used to control whether the Sector Protection Registers can be modified or not.

When the SPRL bit is in the logical “1” state, all Sector Protection Registers are locked and can-

not be modified with the Protect Sector and Unprotect Sector commands (the device will ignore

these commands). In addition, the Global Protect and Global Unprotect features cannot be per-

formed. Any sectors that are presently protected will remain protected, and any sectors that are

presently unprotected will remain unprotected.

When the SPRL bit is in the logical “0” state, all Sector Protection Registers are unlocked and

can be modified (the Protect Sector and Unprotect Sector commands, as well as the Global Pro-

tect and Global Unprotect features, will be processed as normal). The SPRL bit defaults to the

logical “0” state after a power-up or a device reset.

The SPRL bit can be modified freely whenever the WP pin is deasserted. However, if the WP pin

is asserted, then the SPRL bit may only be changed from a logical “0” (Sector Protection Regis-

ters are unlocked) to a logical “1” (Sector Protection Registers are locked). In order to reset the

SPRL bit back to a logical “0” using the Write Status Register command, the WP pin will have to

first be deasserted.

The SPRL bit is the only bit of the Status Register that can be user modified via the Write Status

10.1.2 SPM Bit

The SPM bit indicates whether the device is in the Byte/Page Program mode or the Sequential

Program Mode. The default state after power-up or device reset is the Byte/Page Program

mode.

10.1.3 EPE Bit

The EPE bit indicates whether the last erase or program operation completed successfully or

not. If at least one byte during the erase or program operation did not erase or program properly,

then the EPE bit will be set to the logical “1” state. The EPE bit will not be set if an erase or pro-

gram operation aborts for any reason such as an attempt to erase or program a protected region

or if the WEL bit is not set prior to an erase or program operation. The EPE bit will be updated

after every erase and program operation.

10.1.4 WPP Bit

The WPP bit can be read to determine if the WP pin has been asserted or not.

10.1.5 SWP Bits

The SWP bits provide feedback on the software protection status for the device. There are three

possible combinations of the SWP bits that indicate whether none, some, or all of the sectors

have been protected using the Protect Sector command or the Global Protect feature. If the

SWP bits indicate that some of the sectors have been protected, then the individual Sector Pro-

tection Registers can be read with the Read Sector Protection Registers command to determine

which sectors are in fact protected.

3668D–DFLASH–9/08

AT25DF041A

10.1.6 WEL Bit

The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is

in the logical “0” state, the device will not accept any program, erase, Protect Sector, Unprotect

Sector, or Write Status Register commands. The WEL bit defaults to the logical “0” state after a

device power-up or reset. In addition, the WEL bit will be reset to the logical “0” state automati-

cally under the following conditions:

• Write Disable operation completes successfully

• Write Status Register operation completes successfully or aborts

• Protect Sector operation completes successfully or aborts

• Unprotect Sector operation completes successfully or aborts

• Byte/Page Program operation completes successfully or aborts

• Sequential Program Mode reaches highest unprotected memory location

• Sequential Program Mode reaches the end of the memory array

• Sequential Program Mode aborts

• Block Erase operation completes successfully or aborts

• Chip Erase operation completes successfully or aborts

• Hold condition aborts

If the WEL bit is in the logical “1” state, it will not be reset to a logical “0” if an operation aborts

due to an incomplete or unrecognized opcode being clocked into the device before the CS pin is

deasserted. In order for the WEL bit to be reset when an operation aborts prematurely, the entire

opcode for a program, erase, Protect Sector, Unprotect Sector, or Write Status Register com-

mand must have been clocked into the device.

10.1.7 RDY/BSY Bit

The RDY/BSY bit is used to determine whether or not an internal operation, such as a program

or erase, is in progress. To poll the RDY/BSY bit to detect the completion of a program or erase

cycle, new Status Register data must be continually clocked out of the device until the state of

the RDY/BSY bit changes from a logical “1” to a logical “0”.

Figure 10-1. Read Status Register

SCK

MSB

2310

00000101

675410119812 212217 20191815 1613 14 23 24

OPCODE

MSB MSB

DDDDDD DDDD

MSB

DDDDDDDD

STATUS REGISTER DATA STATUS REGISTER DATA

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

10.2 Write Status Register

The Write Status Register command is used to modify the SPRL bit of the Status Register

and/or to perform a Global Protect or Global Unprotect operation. Before the Write Status Regis-

ter command can be issued, the Write Enable command must have been previously issued to

set the WEL bit in the Status Register to a logical “1”.

To issue the Write Status Register command, the CS pin must first be asserted and the opcode

of 01h must be clocked into the device followed by one byte of data. The one byte of data con-

sists of the SPRL bit value, a don’t care bit, four data bits to denote whether a Global Protect or

Unprotect should be performed, and two additional don’t care bits (see Table 10-2). Any addi-

tional data bytes that are sent to the device will be ignored. When the CS pin is deasserted, the

SPRL bit in the Status Register will be modified, and the WEL bit in the Status Register will be

reset back to a logical “0”. The values of bits 5, 4, 3, and 2 and the state of the SPRL bit before

the Write Status Register command was executed (the prior state of the SPRL bit) will determine

whether or not a Global Protect or Global Unprotect will be perfomed. Please refer to the “Global

Protect/Unprotect” section on page 18 for more details.

The complete one byte of data must be clocked into the device before the CS pin is deasserted;

otherwise, the device will abort the operation, the state of the SPRL bit will not change, no

potential Global Protect or Unprotect will be performed, and the WEL bit in the Status Register

will be reset back to the logical “0” state.

If the WP pin is asserted, then the SPRL bit can only be set to a logical “1”. If an attempt is made

to reset the SPRL bit to a logical “0” while the WP pin is asserted, then the Write Status Register

command will be ignored, and the WEL bit in the Status Register will be reset back to the logical

“0” state. In order to reset the SPRL bit to a logical “0”, the WP pin must be deasserted.

Figure 10-2. Write Status Register

Table 10-2. Write Status Register Format

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

SPRL X Global Protect/Unprotect X X

SCK

MSB

2310

0000000

675410119814151312

OPCODE

MSB

1DXDDDDXX

STATUS REGISTER IN

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

11. Other Commands and Functions

11.1 Read Manufacturer and Device ID

Identification information can be read from the device to enable systems to electronically query

and identify the device while it is in system. The identification method and the command opcode

comply with the JEDEC standard for “Manufacturer and Device ID Read Methodology for SPI

Compatible Serial Interface Memory Devices”. The type of information that can be read from the

device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the ven-

dor specific Extended Device Information.

To read the identification information, the CS pin must first be asserted and the opcode of 9Fh

must be clocked into the device. After the opcode has been clocked in, the device will begin out-

putting the identification data on the SO pin during the subsequent clock cycles. The first byte

that will be output will be the Manufacturer ID followed by two bytes of Device ID information.

The fourth byte output will be the Extended Device Information String Length, which will be 00h

indicating that no Extended Device Information follows. After the Extended Device Information

String Length byte is output, the SO pin will go into a high-impedance state; therefore, additional

clock cycles will have no affect on the SO pin and no data will be output. As indicated in the

JEDEC standard, reading the Extended Device Information String Length and any subsequent

data is optional.

Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and put

the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not

require that a full byte of data be read.

Table 11-1. Manufacturer and Device ID Information

Byte No. Data Type Value

1 Manufacturer ID 1Fh

2 Device ID (Part 1) 44h

3 Device ID (Part 2) 01h

4 Extended Device Information String Length 00h

Table 11-2. Manufacturer and Device ID Details

Data Type Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

Hex

Value Details

Manufacturer ID

JEDEC Assigned Code

1Fh JEDEC Code: 0001 1111 (1Fh for Atmel)

00011111

Device ID (Part 1)

Family Code Density Code

44h Family Code: 010 (AT25/26DFxxx series)

Density Code: 00100 (4-Mbit)

01000100

Device ID (Part 2)

Sub Code Product Version Code

01h Sub Code: 000 (Standard series)

Product Version: 00001 (First major revision)

00000001

3668D–DFLASH–9/08

AT25DF041A

Figure 11-1. Read Manufacturer and Device ID

11.2 Deep Power-down

During normal operation, the device will be placed in the standby mode to consume less power

as long as the CS pin remains deasserted and no internal operation is in progress. The Deep

Power-down command offers the ability to place the device into an even lower power consump-

tion state called the Deep Power-down mode.

When the device is in the Deep Power-down mode, all commands including the Read Status

command. Since all commands will be ignored, the mode can be used as an extra protection

mechanism against program and erase operations.

Entering the Deep Power-down mode is accomplished by simply asserting the CS pin, clocking

in the opcode of B9h, and then deasserting the CS pin. Any additional data clocked into the

device after the opcode will be ignored. When the CS pin is deasserted, the device will enter the

Deep Power-down mode within the maximum time of tEDPD.

The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must

be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort

the operation and return to the standby mode once the CS pin is deasserted. In addition, the

device will default to the standby mode after a power-cycle or a device reset.

The Deep Power-down command will be ignored if an internally self-timed operation such as a

program or erase cycle is in progress. The Deep Power-down command must be reissued after

the internally self-timed operation has been completed in order for the device to enter the Deep

Power-down mode.

SCK

6 0

9Fh

8 7 38

OPCODE

1Fh 44h 01h 00h

MANUFACTURER ID DEVICE ID

BYTE 1

DEVICE ID

BYTE 2

EXTENDED

DEVICE

INFORMATION

STRING LENGTH

HIGH-IMPEDANCE

14 16 15 22 24 23 30 32 31

Note: Each transition shown for SI and SO represents one byte (8 bits)

3668D–DFLASH–9/08

AT25DF041A

Figure 11-2. Deep Power-down

11.3 Resume from Deep Power-down

In order exit the Deep Power-down mode and resume normal device operation, the Resume

from Deep Power-down command must be issued. The Resume from Deep Power-down com-

mand is the only command that the device will recognize while in the Deep Power-down mode.

To resume from the Deep Power-down mode, the CS pin must first be asserted and opcode of

ABh must be clocked into the device. Any additional data clocked into the device after the

opcode will be ignored. When the CS pin is deasserted, the device will exit the Deep Power-

down mode within the maximum time of tRDPD and return to the standby mode. After the device

has returned to the standby mode, normal command operations such as Read Array can be

resumed.

If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not

deasserted on an even byte boundary (multiples of eight bits), then the device will abort the

operation and return to the Deep Power-down mode.

Figure 11-3. Resume from Deep Power-down

SCK

MSB

2310

10111001

6754

OPCODE

HIGH-IMPEDANCE

Standby Mode Current

Active Current

Deep Power-Down Mode Current

EDPD

SCK

MSB

ICC

2310

10101011

6754

OPCODE

HIGH-IMPEDANCE

Deep Power-Down Mode Current

Active Current

Standby Mode Current

RDPD

3668D–DFLASH–9/08

AT25DF041A

11.4 Hold

The HOLD pin is used to pause the serial communication with the device without having to stop

or reset the clock sequence. The Hold mode, however, does not have an affect on any internally

self-timed operations such as a program or erase cycle. Therefore, if an erase cycle is in

progress, asserting the HOLD pin will not pause the operation, and the erase cycle will continue

until it is finished.

The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated

simply by asserting the HOLD pin during the SCK low pulse. If the HOLD pin is asserted during

the SCK high pulse, then the Hold mode won't be started until the beginning of the next SCK low

pulse. The device will remain in the Hold mode as long as the HOLD pin and CS pin are

asserted.

While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin

and the SCK pin will be ignored. The WP pin, however, can still be asserted or deasserted while

in the Hold mode.

To end the Hold mode and resume serial communication, the HOLD pin must be deasserted

during the SCK low pulse. If the HOLD pin is deasserted during the SCK high pulse, then the

Hold mode won't end until the beginning of the next SCK low pulse.

If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may

have been started will be aborted, and the device will reset the WEL bit in the Status Register

back to the logical “0” state.

Figure 11-4. Hold Mode

SCK

HOLD

Hold HoldHold

3668D–DFLASH–9/08

AT25DF041A

12. Electrical Specifications

12.1 Absolute Maximum Ratings*

Temperature under Bias ............................... -55°C to +125°C*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect device

reliability.

Storage Temperature .................................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground .....................................-0.6V to +4.1V

All Output Voltages

with Respect to Ground .............................-0.6V to VCC + 0.5V

12.2 DC and AC Operating Range

AT25DF041A (2.3V version) AT25DF041A

Operating Temperature (Case) Ind. -40°C to 85°C-40°C to 85°C

VCC Power Supply 2.3V to 3.6V 2.7V to 3.6V

12.3 DC Characteristics

Symbol Parameter Condition Min Typ Max Units

ISB Standby Current CS, WP, HOLD = VCC,

all inputs at CMOS levels 25 35 µA

IDPD Deep Power-down Current CS, WP, HOLD = VCC,

all inputs at CMOS levels 15 20 µA

ICC1 Active Current, Read Operation

f = 70 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max 11 16

f = 66 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max 10 15

f = 50 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max 914

f = 33 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max 812

f = 20 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max 710

ICC2 Active Current, Program Operation CS = VCC, VCC = Max 12 18 mA

ICC3 Active Current, Erase Operation CS = VCC, VCC = Max 14 20 mA

ILI Input Leakage Current VIN = CMOS levels 1 µA

ILO Output Leakage Current VOUT = CMOS levels 1 µA

VIL Input Low Voltage 0.3 x VCC V

VIH Input High Voltage 0.7 x VCC V

VOL Output Low Voltage IOL = 1.6 mA; VCC = Min 0.4 V

VOH Output High Voltage IOH = -100 µA VCC - 0.2V V

3668D–DFLASH–9/08

AT25DF041A

Notes: 1. Not 100% tested (value guaranteed by design and characterization).

2. 15 pF load at 70 MHz, 30 pF load at 66 MHz.

3. Only applicable as a constraint for the Write Status Register command when SPRL = 1

12.4 AC Characteristics

Symbol Parameter

AT25DF041A

(2.3V version) AT25DF041A

Min Max Min Max Units

fSCK Serial Clock (SCK) Frequency 50 70 MHz

fRDLF SCK Frequency for Read Array (Low Frequency - 03h opcode) 33 33 MHz

tSCKH SCK High Time 8.0 6.4 ns

tSCKL SCK Low Time 8.0 6.4 ns

tSCKR(1) SCK Rise Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns

tSCKF(1) SCK Fall Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns

tCSH Chip Select High Time 50 50 ns

tCSLS Chip Select Low Setup Time (relative to SCK) 5 5 ns

tCSLH Chip Select Low Hold Time (relative to SCK) 5 5 ns

tCSHS Chip Select High Setup Time (relative to SCK) 5 5 ns

tCSHH Chip Select High Hold Time (relative to SCK) 5 5 ns

tDS Data In Setup Time 2 2 ns

tDH Data In Hold Time 3 3 ns

tDIS(1) Output Disable Time 7 6 ns

tV(2) Output Valid Time 7 6 ns

tOH Output Hold Time 0 0 ns

tHLS HOLD Low Setup Time (relative to SCK) 5 5 ns

tHLH HOLD Low Hold Time (relative to SCK) 5 5 ns

tHHS HOLD High Setup Time (relative to SCK) 5 5 ns

tHHH HOLD High Hold Time (relative to SCK) 5 5 ns

tHLQZ(1) HOLD Low to Output High-Z 7 6 ns

tHHQX(1) HOLD High to Output Low-Z 7 6 ns

tWPS(1)(3) Write Protect Setup Time 20 20 ns

tWPH(1)(3) Write Protect Hold Time 100 100 ns

tSECP(1) Sector Protect Time (from Chip Select High) 20 20 ns

tSECUP(1) Sector Unprotect Time (from Chip Select High) 20 20 ns

tEDPD(1) Chip Select High to Deep Power-down 3 3 µs

tRDPD(1) Chip Select High to Standby Mode 3 3 µs

3668D–DFLASH–9/08

AT25DF041A

Note: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.

2. Not 100% tested (value guaranteed by design and characterization).

12.7 Input Test Waveforms and Measurement Levels

tR, tF < 2 ns (10% to 90%)

12.8 Output Test Load

12.5 Program and Erase Characteristics

Symbol Parameter Min Typ Max Units

tPP(1) Page Program Time (256 Bytes) 1.2 5 ms

tBP Byte Program Time 7 µs

tBLKE(1) Block Erase Time

4 Kbytes 50 200

ms32 Kbytes 250 600

64 Kbytes 400 950

tCHPE(1)(2) Chip Erase Time 3 7 sec

tWRSR(2) Write Status Register Time 200 ns

12.6 Power-up Conditions

Symbol Parameter Min Max Units

tVCSL Minimum VCC to Chip Select Low Time 70 µs

tPUW Power-up Device Delay Before Program or Erase Allowed 10 ms

VPOR Power-on Reset Voltage 1.5 2.2 V

DRIVING

LEVELS

MEASUREMENT

LEVEL

0.45V

1.5V

2.4V

DEVICE

UNDER

TEST

30 pF

3668D–DFLASH–9/08

AT25DF041A

13. Waveforms

Figure 13-1. Serial Input Timing

Figure 13-2. Serial Output Timing

Figure 13-3. HOLD Timing – Serial Input

SCK

MSB

HIGH-IMPEDANCE

MSBLSB

tCSLS

tSCKH tSCKL tCSHS

tCSHH

tDStDH

tCSLH

tCSH

SCK

SCKH

SCKL

DIS

SCK

tHHH tHLS

tHLH tHHS

HOLD

HIGH-IMPEDANCE

3668D–DFLASH–9/08

AT25DF041A

Figure 13-4. HOLD Timing – Serial Output

Figure 13-5. WP Timing for Write Status Register Command When SPRL = 1

SCK

HHH

HLS

HLQZ

HLH

HHS

HOLD

HHQX

SCK

000

HIGH-IMPEDANCE

MSBX

WPS

WPH

LSB OF

WRITE STATUS REGISTER

DATA BYTE

MSB OF

WRITE STATUS REGISTER

OPCODE

MSB OF

NEXT OPCODE

3668D–DFLASH–9/08

AT25DF041A

14. Ordering Information

14.1 Ordering Code Detail

Note: The shipping carrier option code is not marked on the devices.

AT25D 04 SS FHB1A– –F

Atmel Designator

Product Family

Device Density

04 = 4-megabit

Interface

1 = Serial

Package Option

M = 8-pad, 5 x 6 x 0.6 mm UDFN

SS = 8-lead, 0.150" wide SOIC

S = 8-lead, 0.208" wide SOIC

Device Grade

H = Green, NiPdAu lead finish, industrial

temperature range (-40°C to +85°C)

Shipping Carrier Option

B = Bulk (tubes)

Y = Trays

T = Tape and reel

Operating Voltage

Blank = 2.7V minimum (2.7V to 3.6V)

F = 2.3V minimum (2.3V to 3.6V)

Device Revision

14.2 Green Package Options (Pb/Halide-free/RoHS Compliant)

Ordering Code Package Lead Finish Operating Voltage fSCK (MHz) Operation Range

AT25DF041A-MH-Y

AT25DF041A-MH-T 8MA1

NiPdAu 2.7V to 3.6V 70

Industrial

(-40°C to +85°C)

AT25DF041A-SSH-B

AT25DF041A-SSH-T 8S1

AT25DF041A-SH-B

AT25DF041A-SH-T 8S2

AT25DF041A-MHF-Y

AT25DF041A-MHF-T 8MA1

NiPdAu 2.3V to 3.6V 50

AT25DF041A-SSHF-B

AT25DF041A-SSHF-T 8S1

Package Type

8MA1 8-pad, 5 x 6 x 0.6 mm Body, Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN)

8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)

8S2 8-lead, 0.208” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)

3668D–DFLASH–9/08

AT25DF041A

15. Packaging Information

15.1 8MA1 – UDFN

TITLE DRAWING NO.GPC REV.

Package Drawing Contact:

packagedrawings@atmel.com 8MA1YFG D

8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally

Enhanced Plastic Ultra Thin Dual Flat No Lead

Package (UDFN)

COMMON DIMENSIONS

(Unit of Measure = mm)

SYMBOL MIN NOM MAX NOTE

A 0.45 0.55 0.60

A1 0.00 0.02 0.05

b 0.35 0.40 0.48

C 0.152 REF

D 4.90 5.00 5.10

D2 3.80 4.00 4.20

E 5.90 6.00 6.10

E2 3.20 3.40 3.60

e 1.27

L 0.50 0.60 0.75

y 0.00 – 0.08

K 0.20 – –

4/15/08

Pin 1 ID

TOP VIEW

SIDE VIEW

BOTTOM VIEW

Pin #1 Notch

(0.20 R)

0.45

Pin #1

Chamfer

(C 0.35)

Option A

(Option B)

3668D–DFLASH–9/08

AT25DF041A

15.2 8S1 – JEDEC SOIC

1150 E. Cheyenne Mtn. Blvd.

Colorado Springs, CO 80906

TITLE DRAWING NO.

REV.

Note:

3/17/05

8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing

Small Outline (JEDEC SOIC) 8S1C

COMMON DIMENSIONS

(Unit of Measure = mm)

SYMBOL MIN NOM MAX NOTE

A1 0.10 – 0.25

These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.

TOP VIEW

END VIEW

SIDE VIEW

3668D–DFLASH–9/08

AT25DF041A

15.3 8S2 – EIAJ SOIC

TITLE DRAWING NO. GPC REV.

Package Drawing Contact:

packagedrawings@atmel.com 8S2STN F

8S2, 8-lead, 0.208” Body, Plastic Small

Outline Package (EIAJ)

4/15/08

COMMON DIMENSIONS

(Unit of Measure = mm)

SYMBOL MIN NOM MAX NOTE

Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.

2. Mismatch of the upper and lower dies and resin burrs aren't included.

3. Determines the true geometric position.

4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.

A 1.70 2.16

A1 0.05 0.25

b 0.35 0.48 4

C 0.15 0.35 4

D 5.13 5.35

E1 5.18 5.40 2

E 7.70 8.26

L 0.51 0.85

θ 0° 8°

e 1.27 BSC 3

TOP VIEW

END VIEW

SIDE VIEW

3668D–DFLASH–9/08

AT25DF041A

16. Revision History

Revision Level – Release Date History

A – March 2007 Initial release.

B – November 2007

Changed part number ordering code to reflect NiPdAu lead finish.

- Changed AT25DF041A-SSU to AT25DF041A-SSH.

- Changed AT25DF041A-SU to AT25DF041A-SH.

- Changed AT25DF041A-MU to AT25DF041A-MH.

Added lead finish details to Ordering Information table.

Added 2.3V - 3.6V operating range.

Changed 8M1-A MLF package to 8MA1 UDFN package.

Added Ordering Code Detail.

C – March 2008 Updated 8MA1 UDFN package drawing with current revision (Rev. C).

D – September 2008

Removed “Preliminary” designation from datasheet

Changed Deep Power-Down Current values

– Increased typical value from 10 µA to 15 µA

– Increased maximum value from 15 µA to 20 µA

Updated Features section

Changed tVCSL minimum from 50 µs to 70 µs

Changed VPOR maximum from 2.5V to 2.2V

3668D–DFLASH–9/08

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Product Contact

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Technical Support

dataflash@atmel.com

Sales Contact

www.atmel.com/contacts

Literature Requests

www.atmel.com/literature

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