© 2003 IXYS All rights reserved 1 - 2
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
●International standard package
miniBLOC
●Isolation voltage 2500 V~
●UL registered E 72873
●2 independent FRED in 1 package
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
Applications
●Antiparallel diode for high frequency
switching devices
●Antisaturation diode
●Snubber diode
●Free wheeling diode in converters
and motor control circuits
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●Avalanche voltage rated for reliable
operation
●Soft reverse recovery for low
EMI/RFI
●Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
miniBLOC, SOT-227 B
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 2x 91-06A
IFAV = 2x 90 A
VRRM = 600 V
trr = 35 ns
VRSM VRRM Type
V V
600 600 DSEP 2x 91-06A
Symbol Conditions Maximum Ratings
IFRMS 100 A
IFAVM TC = 55°C; rectangular, d = 0.5 90 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 1000 A
EAS TVJ = 25°C; non-repetitive 0.4 mJ
IAS = 2 A; L = 180 µH
IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 200 W
VISOL 50/60 Hz, RMS 2500 V~
IISOL £ 1 mA
Mdmounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Conditions Characteristic Values
typ. max.
IR①TVJ = 25°C VR= VRRM 1mA
TVJ = 150°C VR= VRRM 4mA
VF②IF = 90 A; TVJ = 125°C 1.52 V
TVJ = 25°C 2.05 V
RthJC 0.6 K/W
RthCH 0.1 K/W
trr IF = 1 A; -di/dt = 400 A/ms; 35 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 200 A; -diF/dt = 100 A/ms 7.7 A
TVJ = 100°C
329
6
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© 2003 IXYS All rights reserved 2 - 2
DSEP 2x 91-06A
200 600 10000 400 800
90
100
110
120
130
140
150
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C-diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
012
0
25
50
75
100
125
150
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
µC
A/
m
sA/
m
s
trr
ns
tfr
A/
m
s
µs
DSEP 2x91-06A
ZthJC
IF= 180A
IF= 90A
IF= 45A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 90A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
IF= 180A
IF= 90A
IF= 45A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF= 180A
IF= 90A
IF= 45A
tfr VFR
Fig. 7 Transient thermal resistance junction to case
329
TVJ=150°C
TVJ=100°C
TVJ= 25°C
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
NOTE: Fig. 2 to Fig. 6 shows typical values
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