CSD-8M
CSD-8N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 600 THRU 800 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-8M and
CSD-8N are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL CSD-8M CSD-8N UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V
RMS On-State Current (TC=90°C) IT(RMS) 8.0 A
Peak One Cycle Surge, t=10ms ITSM 80 A
I2t Value for Fusing, t=10ms I2t 32 A2s
Peak Gate Power, tp=10μs PGM 40 W
Average Gate Power Dissipation PG(AV) 1.0 W
Peak Forward Gate Current, tp=10μs IFGM 4.0 A
Peak Forward Gate Voltage, tp=10μs VFGM 16 V
Peak Reverse Gate Voltage, tp=10μs VRGM 5.0 V
Critical Rate of Rise of On-State Current di/dt 50 A/μs
Operating Junction Temperature TJ -40 to +125 °C
Storage Temperature Tstg -40 to +150 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM, IRRM Rated VDRM, VRRM 10 μA
IDRM, IRRM Rated VDRM, VRRM, TC=125°C 2.0 mA
IGT V
D=12V, RL=10Ω 3.0 15 mA
IH I
T=100mA 7.3 20 mA
VGT V
D=12V, RL=10Ω 0.9 1.5 V
VTM I
TM=16A, tp=380μs 1.3 1.8 V
dv/dt VD=2/3 VDRM, TC=125°C 200 V/μs
DPAK CASE
R2 (21-January 2013)
www.centralsemi.com
CSD-8M
CSD-8N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 600 THRU 800 VOLT
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
4) Anode
MARKING:
FULL PART NUMBER
www.centralsemi.com
R2 (21-January 2013)
