DDR3L SDRAM
MT41K1G4 – 128 Meg x 4 x 8 banks
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM
(Die Rev :E) data sheet specifications when running in
1.5V compatible mode.
Features
•V
DD = VDDQ = 1.35V (1.283–1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
•8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
•T
C of 105°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
– 16ms, 8192-cycle refresh at >95°C to 105°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration
Options Marking
• Configuration
– 1 Gig x 4 1G4
– 512 Meg x 8 512M8
– 256 Meg x 16 256M16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 10.5mm) Rev. E RH
– 78-ball (7.5mm x 10.6mm) Rev. N RG
– 78-ball (8mm x 10.5mm) Rev. P DA
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E HA
– 96-ball (7.5mm x 13.5mm) Rev. N LY
– 96-ball (8mm x 14mm) Rev. P TW
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133) -093
– 1.07ns @ CL = 13 (DDR3-1866) -107
– 1.25ns @ CL = 11 (DDR3-1600) -125
• Operating temperature
– Commercial (0°C TC +95°C) None
– Industrial (–40°C TC +95°C) IT
– Automotive (–40°C TC +105°C) AT
• Revision :E/:N/:P
Table 1: Key Timing Parameters
Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns)
-093 1, 2 2133 14-14-14 13.09 13.09 13.09
-107 1 1866 13-13-13 13.91 13.91 13.91
-125 1600 11-11-11 13.75 13.75 13.75
Notes: 1. Backward compatible to 1600, CL = 11 (-125).
2. Backward compatible to 1866, CL = 13 (-107).
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 1 Gig x 4 512 Meg x 8 256 Meg x 16
Configuration 128 Meg x 4 x 8 banks 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks
Refresh count 8K 8K 8K
Row address 64K (A[15:0]) 64K (A[15:0]) 32K (A[14:0])
Bank address 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0])
Column address 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0])
Page size 1KB 1KB 2KB
Figure 1: DDR3L Part Numbers
([DPSOH3DUW1XPEHU 07.0'$3
&RQILJXUDWLRQ
*LJ[
0HJ[
0HJ[
*
0
0
&RQILJXUDWLRQ
07. 3DFNDJH 6SHHG
5HYLVLRQ
5HYLVLRQ
(13
&RPPHUFLDO
,QGXVWULDOWHPSHUDWXUH
^
1RQH
,7
$XWRPRWLYHWHPSHUDWXUH $7
3DFNDJH
EDOOPP[PP)%*$
0DUN
+$
5HY
(
EDOOPP[PP)%*$
5+(
6SHHG*UDGH
W
&. QV&/
W
&. QV&/
7HPSHUDWXUH
EDOOPP[PP)%*$
3'$
W
&. QV&/
EDOOPP[PP)%*$
EDOOPP[PP)%*$
1
1
5*
/<
EDOOPP[PP)%*$
37:
Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 2Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Contents
State Diagram ................................................................................................................................................ 11
Functional Description ................................................................................................................................... 12
Industrial Temperature ............................................................................................................................... 12
Automotive Temperature ............................................................................................................................ 12
General Notes ............................................................................................................................................ 13
Functional Block Diagrams ............................................................................................................................. 14
Ball Assignments and Descriptions ................................................................................................................. 16
Package Dimensions ....................................................................................................................................... 22
Electrical Specifications .................................................................................................................................. 28
Absolute Ratings ......................................................................................................................................... 28
Input/Output Capacitance .......................................................................................................................... 29
Thermal Characteristics .................................................................................................................................. 30
Electrical Specifications – IDD Specifications and Conditions ............................................................................ 32
Electrical Characteristics – Operating IDD Specifications .................................................................................. 43
Electrical Specifications – DC and AC .............................................................................................................. 48
DC Operating Conditions ........................................................................................................................... 48
Input Operating Conditions ........................................................................................................................ 49
DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 53
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 56
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 58
ODT Characteristics ....................................................................................................................................... 59
1.35V ODT Resistors ................................................................................................................................... 60
ODT Sensitivity .......................................................................................................................................... 61
ODT Timing Definitions ............................................................................................................................. 61
Output Driver Impedance ............................................................................................................................... 65
34 Ohm Output Driver Impedance .............................................................................................................. 66
DDR3L 34 Ohm Driver ................................................................................................................................ 67
DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 68
DDR3L Alternative 40 Ohm Driver ............................................................................................................... 69
DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 69
Output Characteristics and Operating Conditions ............................................................................................ 71
Reference Output Load ............................................................................................................................... 74
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 74
Slew Rate Definitions for Differential Output Signals .................................................................................... 76
Speed Bin Tables ............................................................................................................................................ 77
Electrical Characteristics and AC Operating Conditions ................................................................................... 82
Command and Address Setup, Hold, and Derating .......................................................................................... 102
Data Setup, Hold, and Derating ...................................................................................................................... 109
Commands – Truth Tables ............................................................................................................................. 117
Commands ................................................................................................................................................... 120
DESELECT ................................................................................................................................................ 120
NO OPERATION ........................................................................................................................................ 120
ZQ CALIBRATION LONG ........................................................................................................................... 120
ZQ CALIBRATION SHORT .......................................................................................................................... 120
ACTIVATE ................................................................................................................................................. 120
READ ........................................................................................................................................................ 120
WRITE ...................................................................................................................................................... 121
PRECHARGE ............................................................................................................................................. 122
REFRESH .................................................................................................................................................. 122
SELF REFRESH .......................................................................................................................................... 123
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 3Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DLL Disable Mode ..................................................................................................................................... 124
Input Clock Frequency Change ...................................................................................................................... 128
Write Leveling ............................................................................................................................................... 130
Write Leveling Procedure ........................................................................................................................... 132
Write Leveling Mode Exit Procedure ........................................................................................................... 134
Initialization ................................................................................................................................................. 135
Voltage Initialization / Change ....................................................................................................................... 137
VDD Voltage Switching ............................................................................................................................... 138
Mode Registers .............................................................................................................................................. 139
Mode Register 0 (MR0) ................................................................................................................................... 140
Burst Length ............................................................................................................................................. 140
Burst Type ................................................................................................................................................. 141
DLL RESET ................................................................................................................................................ 142
Write Recovery .......................................................................................................................................... 143
Precharge Power-Down (Precharge PD) ...................................................................................................... 143
CAS Latency (CL) ....................................................................................................................................... 143
Mode Register 1 (MR1) ................................................................................................................................... 145
DLL Enable/DLL Disable ........................................................................................................................... 145
Output Drive Strength ............................................................................................................................... 146
OUTPUT ENABLE/DISABLE ...................................................................................................................... 146
TDQS Enable ............................................................................................................................................. 146
On-Die Termination .................................................................................................................................. 147
WRITE LEVELING ..................................................................................................................................... 147
POSTED CAS ADDITIVE Latency ................................................................................................................ 147
Mode Register 2 (MR2) ................................................................................................................................... 148
CAS Write Latency (CWL) ........................................................................................................................... 149
AUTO SELF REFRESH (ASR) ....................................................................................................................... 149
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 149
SRT vs. ASR ............................................................................................................................................... 150
DYNAMIC ODT ......................................................................................................................................... 150
Mode Register 3 (MR3) ................................................................................................................................... 150
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 151
MPR Functional Description ...................................................................................................................... 152
MPR Register Address Definitions and Bursting Order ................................................................................. 153
MPR Read Predefined Pattern .................................................................................................................... 158
MODE REGISTER SET (MRS) Command ........................................................................................................ 158
ZQ CALIBRATION Operation ......................................................................................................................... 159
ACTIVATE Operation ..................................................................................................................................... 160
READ Operation ............................................................................................................................................ 162
WRITE Operation .......................................................................................................................................... 173
DQ Input Timing ....................................................................................................................................... 181
PRECHARGE Operation ................................................................................................................................. 183
SELF REFRESH Operation .............................................................................................................................. 183
Extended Temperature Usage ........................................................................................................................ 185
Power-Down Mode ........................................................................................................................................ 186
RESET Operation ........................................................................................................................................... 194
On-Die Termination (ODT) ............................................................................................................................ 196
Functional Representation of ODT ............................................................................................................. 196
Nominal ODT ............................................................................................................................................ 196
Dynamic ODT ............................................................................................................................................... 198
Dynamic ODT Special Use Case ................................................................................................................. 198
Functional Description .............................................................................................................................. 198
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 4Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Synchronous ODT Mode ................................................................................................................................ 204
ODT Latency and Posted ODT .................................................................................................................... 204
Timing Parameters .................................................................................................................................... 204
ODT Off During READs .............................................................................................................................. 207
Asynchronous ODT Mode .............................................................................................................................. 209
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 211
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 213
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 215
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 5Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
List of Figures
Figure 1: DDR3L Part Numbers ........................................................................................................................ 2
Figure 2: Simplified State Diagram ................................................................................................................. 11
Figure 3: 1 Gig x 4 Functional Block Diagram .................................................................................................. 14
Figure 4: 512 Meg x 8 Functional Block Diagram ............................................................................................. 15
Figure 5: 256 Meg x 16 Functional Block Diagram ........................................................................................... 15
Figure 6: 78-Ball FBGA – x4, x8 (Top View) ...................................................................................................... 16
Figure 7: 96-Ball FBGA – x16 (Top View) ......................................................................................................... 17
Figure 8: 78-Ball FBGA – x4, x8 (RH) ............................................................................................................... 22
Figure 9: 78-Ball FBGA – x4, x8 (RG) ............................................................................................................... 23
Figure 10: 78-Ball FBGA – x4, x8 (DA) ............................................................................................................. 24
Figure 11: 96-Ball FBGA – x16 (HA) ................................................................................................................. 25
Figure 12: 96-Ball FBGA – x16 (LY) .................................................................................................................. 26
Figure 13: 96-Ball FBGA – x16 (TW) ................................................................................................................ 27
Figure 14: Thermal Measurement Point ......................................................................................................... 30
Figure 15: DDR3L 1.35V Input Signal .............................................................................................................. 52
Figure 16: Overshoot ..................................................................................................................................... 53
Figure 17: Undershoot ................................................................................................................................... 54
Figure 18: VIX for Differential Signals .............................................................................................................. 54
Figure 19: Single-Ended Requirements for Differential Signals ........................................................................ 54
Figure 20: Definition of Differential AC-Swing and tDVAC ............................................................................... 55
Figure 21: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 57
Figure 22: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 58
Figure 23: ODT Levels and I-V Characteristics ................................................................................................ 59
Figure 24: ODT Timing Reference Load .......................................................................................................... 62
Figure 25: tAON and tAOF Definitions ............................................................................................................ 63
Figure 26: tAONPD and tAOFPD Definitions ................................................................................................... 63
Figure 27: tADC Definition ............................................................................................................................. 64
Figure 28: Output Driver ................................................................................................................................ 65
Figure 29: DQ Output Signal .......................................................................................................................... 72
Figure 30: Differential Output Signal .............................................................................................................. 73
Figure 31: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 74
Figure 32: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 75
Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 76
Figure 34: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock) ............................................. 105
Figure 35: Nominal Slew Rate for tIH (Command and Address – Clock) ........................................................... 106
Figure 36: Tangent Line for tIS (Command and Address – Clock) .................................................................... 107
Figure 37: Tangent Line for tIH (Command and Address – Clock) .................................................................... 108
Figure 38: Nominal Slew Rate and tVAC for tDS (DQ – Strobe) ......................................................................... 113
Figure 39: Nominal Slew Rate for tDH (DQ – Strobe) ...................................................................................... 114
Figure 40: Tangent Line for tDS (DQ – Strobe) ................................................................................................ 115
Figure 41: Tangent Line for tDH (DQ – Strobe) ............................................................................................... 116
Figure 42: Refresh Mode ............................................................................................................................... 123
Figure 43: DLL Enable Mode to DLL Disable Mode ........................................................................................ 125
Figure 44: DLL Disable Mode to DLL Enable Mode ........................................................................................ 126
Figure 45: DLL Disable tDQSCK .................................................................................................................... 127
Figure 46: Change Frequency During Precharge Power-Down ........................................................................ 129
Figure 47: Write Leveling Concept ................................................................................................................. 130
Figure 48: Write Leveling Sequence ............................................................................................................... 133
Figure 49: Write Leveling Exit Procedure ....................................................................................................... 134
Figure 50: Initialization Sequence ................................................................................................................. 136
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 6Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 51: VDD Voltage Switching .................................................................................................................. 138
Figure 52: MRS to MRS Command Timing (tMRD) ......................................................................................... 139
Figure 53: MRS to nonMRS Command Timing (tMOD) .................................................................................. 140
Figure 54: Mode Register 0 (MR0) Definitions ................................................................................................ 141
Figure 55: READ Latency .............................................................................................................................. 144
Figure 56: Mode Register 1 (MR1) Definition ................................................................................................. 145
Figure 57: READ Latency (AL = 5, CL = 6) ....................................................................................................... 148
Figure 58: Mode Register 2 (MR2) Definition ................................................................................................. 148
Figure 59: CAS Write Latency ........................................................................................................................ 149
Figure 60: Mode Register 3 (MR3) Definition ................................................................................................. 151
Figure 61: Multipurpose Register (MPR) Block Diagram ................................................................................. 152
Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 154
Figure 63: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 155
Figure 64: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 156
Figure 65: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 157
Figure 66: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 159
Figure 67: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 160
Figure 68: Example: tFAW ............................................................................................................................. 161
Figure 69: READ Latency .............................................................................................................................. 162
Figure 70: Consecutive READ Bursts (BL8) .................................................................................................... 164
Figure 71: Consecutive READ Bursts (BC4) .................................................................................................... 164
Figure 72: Nonconsecutive READ Bursts ....................................................................................................... 165
Figure 73: READ (BL8) to WRITE (BL8) .......................................................................................................... 165
Figure 74: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 166
Figure 75: READ to PRECHARGE (BL8) .......................................................................................................... 166
Figure 76: READ to PRECHARGE (BC4) ......................................................................................................... 167
Figure 77: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 167
Figure 78: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 167
Figure 79: Data Output Timing – tDQSQ and Data Valid Window .................................................................... 169
Figure 80: Data Strobe Timing – READs ......................................................................................................... 170
Figure 81: Method for Calculating tLZ and tHZ ............................................................................................... 171
Figure 82: tRPRE Timing ............................................................................................................................... 171
Figure 83: tRPST Timing ............................................................................................................................... 172
Figure 84: tWPRE Timing .............................................................................................................................. 174
Figure 85: tWPST Timing .............................................................................................................................. 174
Figure 86: WRITE Burst ................................................................................................................................ 175
Figure 87: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 176
Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 176
Figure 89: Nonconsecutive WRITE to WRITE ................................................................................................. 177
Figure 90: WRITE (BL8) to READ (BL8) .......................................................................................................... 177
Figure 91: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 178
Figure 92: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 179
Figure 93: WRITE (BL8) to PRECHARGE ........................................................................................................ 180
Figure 94: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 180
Figure 95: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 181
Figure 96: Data Input Timing ........................................................................................................................ 182
Figure 97: Self Refresh Entry/Exit Timing ...................................................................................................... 184
Figure 98: Active Power-Down Entry and Exit ................................................................................................ 188
Figure 99: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 188
Figure 100: Precharge Power-Down (Slow-Exit Mode) Entry and Exit .............................................................. 189
Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ........................................... 189
Figure 102: Power-Down Entry After WRITE .................................................................................................. 190
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 7Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 103: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 190
Figure 104: REFRESH to Power-Down Entry .................................................................................................. 191
Figure 105: ACTIVATE to Power-Down Entry ................................................................................................. 191
Figure 106: PRECHARGE to Power-Down Entry ............................................................................................. 192
Figure 107: MRS Command to Power-Down Entry ......................................................................................... 192
Figure 108: Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 193
Figure 109: RESET Sequence ......................................................................................................................... 195
Figure 110: On-Die Termination ................................................................................................................... 196
Figure 111: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 201
Figure 112: Dynamic ODT: Without WRITE Command .................................................................................. 201
Figure 113: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 202
Figure 114: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 203
Figure 115: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 203
Figure 116: Synchronous ODT ...................................................................................................................... 205
Figure 117: Synchronous ODT (BC4) ............................................................................................................. 206
Figure 118: ODT During READs .................................................................................................................... 208
Figure 119: Asynchronous ODT Timing with Fast ODT Transition .................................................................. 210
Figure 120: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 212
Figure 121: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 214
Figure 122: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 216
Figure 123: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 216
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 8Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
List of Tables
Table 1: Key Timing Parameters ....................................................................................................................... 1
Table 2: Addressing ......................................................................................................................................... 2
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions .............................................................................................. 18
Table 4: 96-Ball FBGA – x16 Ball Descriptions ................................................................................................. 20
Table 5: Absolute Maximum Ratings .............................................................................................................. 28
Table 6: DDR3L Input/Output Capacitance .................................................................................................... 29
Table 7: Thermal Characteristics .................................................................................................................... 30
Table 8: Thermal Impedance ......................................................................................................................... 31
Table 9: Timing Parameters Used for IDD Measurements – Clock Units ............................................................ 32
Table 10: IDD0 Measurement Loop .................................................................................................................. 33
Table 11: IDD1 Measurement Loop .................................................................................................................. 34
Table 12: IDD Measurement Conditions for Power-Down Currents ................................................................... 35
Table 13: IDD2N and IDD3N Measurement Loop ................................................................................................ 36
Table 14: IDD2NT Measurement Loop .............................................................................................................. 36
Table 15: IDD4R Measurement Loop ................................................................................................................ 37
Table 16: IDD4W Measurement Loop ............................................................................................................... 38
Table 17: IDD5B Measurement Loop ................................................................................................................ 39
Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 40
Table 19: IDD7 Measurement Loop .................................................................................................................. 41
Table 20: IDD Maximum Limits Die Rev. E for 1.35/1.5V Operation ................................................................... 43
Table 21: IDD Maximum Limits Die Rev. N for 1.35V/1.5V Operation ................................................................ 44
Table 22: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation ................................................................. 46
Table 23: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 48
Table 24: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 49
Table 25: DDR3L 1.35V Input Switching Conditions – Command and Address ................................................. 50
Table 26: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 51
Table 27: DDR3L Control and Address Pins ..................................................................................................... 53
Table 28: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 53
Table 29: DDR3L 1.35V – Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ... 55
Table 30: Single-Ended Input Slew Rate Definition .......................................................................................... 56
Table 31: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 58
Table 32: On-Die Termination DC Electrical Characteristics ............................................................................ 59
Table 33: 1.35V RTT Effective Impedance ........................................................................................................ 60
Table 34: ODT Sensitivity Definition .............................................................................................................. 61
Table 35: ODT Temperature and Voltage Sensitivity ........................................................................................ 61
Table 36: ODT Timing Definitions .................................................................................................................. 62
Table 37: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 62
Table 38: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 66
Table 39: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 67
Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.35V ..................................... 67
Table 41: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.45V ..................................... 67
Table 42: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.283 ..................................... 68
Table 43: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 68
Table 44: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 68
Table 45: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 69
Table 46: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 69
Table 47: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 70
Table 48: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 71
Table 49: DDR3L Differential Output Driver Characteristics ............................................................................ 72
Table 50: DDR3L Differential Output Driver Characteristics VOX(AC) ................................................................. 73
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 9Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 51: Single-Ended Output Slew Rate Definition ....................................................................................... 74
Table 52: Differential Output Slew Rate Definition .......................................................................................... 76
Table 53: DDR3L-1066 Speed Bins .................................................................................................................. 77
Table 54: DDR3L-1333 Speed Bins .................................................................................................................. 78
Table 55: DDR3L-1600 Speed Bins .................................................................................................................. 79
Table 56: DDR3L-1866 Speed Bins .................................................................................................................. 80
Table 57: DDR3L-2133 Speed Bins .................................................................................................................. 81
Table 58: Electrical Characteristics and AC Operating Conditions .................................................................... 82
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 92
Table 60: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based ............... 102
Table 61: DDR3L-800/1066 Derating Values tIS/tIH – AC160/DC90-Based ....................................................... 103
Table 62: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based ................................ 103
Table 63: DDR3L-1866/2133 Derating Values for tIS/tIH – AC125/DC90-Based ................................................ 103
Table 64: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD Transition . 104
Table 65: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based ....................... 109
Table 66: DDR3L Derating Values for tDS/tDH – AC160/DC90-Based .............................................................. 110
Table 67: DDR3L Derating Values for tDS/tDH – AC135/DC90-Based .............................................................. 110
Table 68: DDR3L Derating Values for tDS/tDH – AC130/DC90-Based at 2V/ns ................................................. 111
Table 69: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition ............. 112
Table 70: Truth Table – Command ................................................................................................................. 117
Table 71: Truth Table – CKE .......................................................................................................................... 119
Table 72: READ Command Summary ............................................................................................................ 121
Table 73: WRITE Command Summary .......................................................................................................... 121
Table 74: READ Electrical Characteristics, DLL Disable Mode ......................................................................... 127
Table 75: Write Leveling Matrix ..................................................................................................................... 131
Table 76: Burst Order .................................................................................................................................... 142
Table 77: MPR Functional Description of MR3 Bits ........................................................................................ 152
Table 78: MPR Readouts and Burst Order Bit Mapping ................................................................................... 153
Table 79: Self Refresh Temperature and Auto Self Refresh Description ............................................................ 185
Table 80: Self Refresh Mode Summary ........................................................................................................... 185
Table 81: Command to Power-Down Entry Parameters .................................................................................. 186
Table 82: Power-Down Modes ....................................................................................................................... 187
Table 83: Truth Table – ODT (Nominal) ......................................................................................................... 197
Table 84: ODT Parameters ............................................................................................................................ 197
Table 85: Write Leveling with Dynamic ODT Special Case .............................................................................. 198
Table 86: Dynamic ODT Specific Parameters ................................................................................................. 199
Table 87: Mode Registers for RTT,nom ............................................................................................................. 199
Table 88: Mode Registers for RTT(WR) ............................................................................................................. 200
Table 89: Timing Diagrams for Dynamic ODT ................................................................................................ 200
Table 90: Synchronous ODT Parameters ........................................................................................................ 205
Table 91: Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 210
Table 92: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 212
4Gb: x4, x8, x16 DDR3L SDRAM
Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
State Diagram
Figure 2: Simplified State Diagram
SRX = Self refresh exit
WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION
Bank
active
ReadingWriting
Activating
Refreshing
Self
refresh
Idle
Active
power-
down
ZQ
calibration
From any
state
Power
applied Reset
procedure
Power
on
Initial-
ization
MRS, MPR,
write
leveling
Precharge
power-
down
Writing Reading
Automatic
sequence
Command
sequence
Precharging
READ
READ READ
READ AP
READ AP
READ AP
PRE, PREA
PRE, PREA PRE, PREA
WRITE
WRITE
CKE L CKE L
CKE L
WRITE
WRITE AP
WRITE AP
WRITE AP
PDE
PDE
PDX
PDX
SRX
SRE
REF
MRS
ACT
RESET
ZQCL
ZQCL/ZQCS
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
PREA = PRECHARGE ALL
READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
4Gb: x4, x8, x16 DDR3L SDRAM
State Diagram
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Functional Description
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.
The double data rate architecture is an 8n-prefetch architecture with an interface de-
signed to transfer two data words per clock cycle at the I/O pins. A single read or write
operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-
cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-
half-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK
going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, com-
mand, and address signals are registered at every positive edge of CK. Input data is reg-
istered on the first rising edge of DQS after the WRITE preamble, and output data is ref-
erenced on the first rising edge of DQS after the READ preamble.
Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a se-
lected location and continue for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an ACTIVATE command, which is then
followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVATE command are used to select the bank and row to be accessed. The ad-
dress bits registered coincident with the READ or WRITE commands are used to select
the bank and the starting column location for the burst access.
The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be
enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM
allows for concurrent operation, thereby providing high bandwidth by hiding row pre-
charge and activation time.
A self refresh mode is provided, along with a power-saving, power-down mode.
Industrial Temperature
The industrial temperature (IT) device requires that the case temperature not exceed
–40°C or 95°C. JEDEC specifications require the refresh rate to double when TC exceeds
85°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when TC is < 0°C or
>95°C.
Automotive Temperature
The Automotive temperature (AT) device requires that the case temperature not exceed
–40°C or 105°C. Micron specification requires the refresh rate to 4X when TC exceeds
95°C; this also requires use of the high-temperature self refresh option. Additionally,
ODT resistance and the input/output impedance must be derated when TC is < 0°C or
>95°C.
4Gb: x4, x8, x16 DDR3L SDRAM
Functional Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
General Notes
• The functionality and the timing specifications discussed in this data sheet are for the
DLL enable mode of operation (normal operation).
• Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to be
interpreted as any and all DQ collectively, unless specifically stated otherwise.
• The terms “DQS” and “CK” found throughout this data sheet are to be interpreted as
DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.
• Complete functionality may be described throughout the document; any page or dia-
gram may have been simplified to convey a topic and may not be inclusive of all re-
quirements.
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not sup-
ported, and can result in unknown operation.
• Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4,
x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4,
x8).
• Dynamic ODT has a special use case: when DDR3 devices are architected for use in a
single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer
to the Dynamic ODT Special Use Case section.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
– Connect UDQS to ground via 1kȍ* resistor.
– Connect UDQS# to VDD via 1kȍ* resistor.
– Connect UDM to VDD via 1kȍ* resistor.
– Connect DQ[15:8] individually to either VSS, VDD, or VREF via 1kȍ resistors,* or float
DQ[15:8].
*If ODT is used, 1kȍ resistor should be changed to 4x that of the selected ODT.
4Gb: x4, x8, x16 DDR3L SDRAM
Functional Description
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Functional Block Diagrams
DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally
configured as an 8-bank DRAM.
Figure 3: 1 Gig x 4 Functional Block Diagram
Bank 5
Bank 6
Bank 7
Bank 4
Bank 7
Bank 4
Bank 5
Bank 6
16
Row-
address
MUX
Control
logic
Column-
address
counter/
latch
Mode registers
11
Command
decode
A[15:0]
BA[2:0]
16
Address
register
19
256
(x32)
8,192
I/O gating
DM mask logic
Column
decoder
Bank 0
memory
array
(65,536 x 256 x 32)
Bank 0
row-
address
latch
and
decoder
65,536
Sense amplifiers
Bank
control
logic
19
Bank 1
Bank 2
Bank 3
16
8
3
3
Refresh
counter
4
32
32
32
DQS, DQS#
Columns 0, 1, and 2
Columns 0, 1, and 2
ZQCL, ZQCS
To pull-up/pull-down
networks
READ
drivers DQ[3:0]
READ
FIFO
and
data
MUX
Data
4
3
Bank 1
Bank 2
Bank 3
DM
DM
CK, CK#
DQS, DQS#
ZQ CAL
CS#
ZQ
RZQ
CK, CK#
RAS#
WE#
CAS#
ODT
CKE
RESET#
CK, CK#
DLL
DQ[3:0]
(1 . . . 4)
(1, 2)
sw1 sw2
VDDQ/2
RTT,nom
R
TT(WR)
sw1 sw2
V
DDQ
/2
RTT,nom RTT(WR)
sw1 sw2
VDDQ/2
RTT,nom
R
TT(WR)
OTF
BC4 (burst chop)
BC4
Column 2
(select upper or
lower nibble for BC4)
Data
interface
WRITE
drivers
and
input
logic
ODT
control
VSSQ A12
OTF
BC4
4Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 4: 512 Meg x 8 Functional Block Diagram
Bank 5
Bank 6
Bank 7
Bank 4
Bank 7
Bank 4
Bank 5
Bank 6
16
Row-
address
MUX
Control
logic
Column-
address
counter/
latch
Mode registers
10
Command
decode
A[15:0]
BA[2:0]
16
19
8,192
I/O gating
DM mask logic
Column
decoder
Bank 0
Memory
array
(65,536 x 128 x 64)
Bank 0
row-
address
latch
and
decoder
65,536
Sense amplifiers
Bank
control
logic
19
Bank 1
Bank 2
Bank 3
16
7
3
3
Refresh
counter
8
64
64
64
DQS, DQS#
Columns 0, 1, and 2
Columns 0, 1, and 2
ZQCL, ZQCS
To ODT/output drivers
Read
drivers DQ[7:0]
READ
FIFO
and
data
MUX
Data
8
3
Bank 1
Bank 2
Bank 3
DM/TDQS
(shared pin)
TDQS#
CK, CK#
DQS/DQS#
ZQ CAL
ZQ
RZQ
ODT
CKE
CK, CK#
RAS#
WE#
CAS#
CS#
RESET#
CK, CK#
DLL
DQ[7:0]
DQ8
(1 . . . 8)
(1, 2)
sw1 sw2
VDDQ/2
RTT(WR)
RTT,nom
sw1 sw2
V
DDQ
/2
RTT,nom RTT(WR)
sw1 sw2
VDDQ/2
RTT,nom RTT(WR)
BC4 (burst chop)
BC4
BC4
Write
drivers
and
input
logic
Data
interface
Column 2
(select upper or
lower nibble for BC4)
(128
x64)
ODT
control
Address
register
A12
V
SSQ
OTF
OTF
Figure 5: 256 Meg x 16 Functional Block Diagram
Bank 5
Bank 6
Bank 7
Bank 4
Bank 7
Bank 4
Bank 5
Bank 6
13
Row-
address
MUX
Control
logic
Column-
address
counter/
latch
Mode registers
10
Command
decode
A[14:0]
BA[2:0]
15
Address
register
18
(128
x128)
16,384
I/O gating
DM mask logic
Column
decoder
Bank 0
memory
array
(32,768 x 128 x 128)
Bank 0
row-
address
latch
and
decoder
32,768
Sense amplifiers
Bank
control
logic
18
Bank 1
Bank 2
Bank 3
15
7
3
3
Refresh
counter
16
128
128
128
LDQS, LDQS#, UDQS, UDQS#
Column 0, 1, and 2
Columns 0, 1, and 2
ZQCL, ZQCS
To ODT/output drivers
BC4
READ
drivers DQ[15:0]
READ
FIFO
and
data
MUX
Data
16
BC4 (burst chop)
3
Bank 1
Bank 2
Bank 3
LDM/UDM
CK, CK#
LDQS, LDQS#
UDQS, UDQS#
ZQ CAL
ZQ
RZQ
ODT
CKE
CK, CK#
RAS#
WE#
CAS#
CS#
RESET#
CK, CK#
DLL
DQ[15:0]
(1 . . . 16)
(1 . . . 4)
(1, 2)
sw1 sw2
VDDQ/2
RTT,nom RTT(WR)
BC4
sw1 sw2
VDDQ/2
RTT,nom RTT(WR)
sw1 sw2
VDDQ/2
RTT,nom RTT(WR)
Column 2
(select upper or
lower nibble for BC4)
Data
interface
WRITE
drivers
and
input
logic
ODT
control
V
SSQ
A12
OTF
OTF
4Gb: x4, x8, x16 DDR3L SDRAM
Functional Block Diagrams
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Ball Assignments and Descriptions
Figure 6: 78-Ball FBGA – x4, x8 (Top View)
1234 67895
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
V
DD
VSS
VDD
VSSQ
DQ2
NF, DQ6
VDDQ
VSS
VDD
CS#
BA0
A3
A5
A7
RESET#
NC
DQ0
DQS
DQS#
NF, DQ4
RAS#
CAS#
WE#
BA2
A0
A2
A9
A13
NF, NF/TDQS#
DM, DM/TDQS
DQ1
VDD
NF, DQ7
CK
CK#
A10/AP
A15
A12/BC#
A1
A11
A14
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
VSS
VSSQ
DQ3
VSS
NF, DQ5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
A
B
C
D
E
F
G
H
J
K
L
M
N
Notes: 1. Ball descriptions listed in Table 3 (page 18) are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-
fined in Table 3).
4Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 7: 96-Ball FBGA – x16 (Top View)
1234 67895
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
VDDQ
VSSQ
VDDQ
VSSQ
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
DQ13
VDD
DQ11
VDDQ
VSSQ
DQ2
DQ6
VDDQ
VSS
VDD
CS#
BA0
A3
A5
A7
RESET#
DQ15
VSS
DQ9
UDM
DQ0
LDQS
LDQS#
DQ4
RAS#
CAS#
WE#
BA2
A0
A2
A9
A13
DQ12
UDQS#
UDQS
DQ8
LDM
DQ1
VDD
DQ7
CK
CK#
A10/AP
NC
A12/BC#
A1
A11
A14
VDDQ
DQ14
DQ10
VSSQ
VSSQ
DQ3
VSS
DQ5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
VSS
VSSQ
VDDQ
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
Notes: 1. Ball descriptions listed in Table 4 (page 20) are listed as “x4, x8” if unique; otherwise,
x4 and x8 are the same.
2. A comma separates the configuration; a slash defines a selectable function.
Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies
to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-
fined in Table 3).
4Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions
Symbol Type Description
A[15:13], A12/BC#,
A11, A10/AP, A[9:0]
Input Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 117).
BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of
CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW)
internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/
disabled is dependent upon the DDR3 SDRAM configuration and operating mode.
Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations
(all banks idle), or active power-down (row active in any bank). CKE is synchronous
for power-down entry and exit and for self refresh entry. CKE is asynchronous for
self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are
disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disa-
bled during SELF REFRESH. CKE is referenced to VREFCA.
CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
DM Input Input data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with the input data during a write access.
Although the DM ball is input-only, the DM loading is designed to match that of the
DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on
the x8.
ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,
and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is
ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input re-
ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ุ 0.8 × VDD and
DC LOW ื 0.2 × VDDQ. RESET# assertion and desertion are asynchronous.
4Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)
Symbol Type Description
DQ[3:0] I/O Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are
referenced to VREFDQ.
DQ[7:0] I/O Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are
referenced to VREFDQ.
DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write
data. Center-aligned to write data.
TDQS, TDQS# Output Termination data strobe: Applies to the x8 configuration only. When TDQS is
enabled, DM is disabled, and the TDQS and TDQS# balls provide termination
resistance.
VDD Supply Power supply: 1.5V ±0.075V.
VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immuni-
ty.
VREFCA Supply Reference voltage for control, command, and address: VREFCA must be
maintained at all times (including self refresh) for proper device operation.
VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS Supply Ground.
VSSQ Supply DQ ground: Isolated on the device for improved noise immunity.
ZQ Reference External reference ball for output drive calibration: This ball is tied to an
external 240˖ resistor (RZQ), which is tied to VSSQ.
NC – No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
NF – No function: When configured as a x4 device, these balls are NF. When configured
as a x8 device, these balls are defined as TDQS#, DQ[7:4].
4Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 4: 96-Ball FBGA – x16 Ball Descriptions
Symbol Type Description
A[14:13], A12/BC#,
A11, A10/AP, A[9:0]
Input Address inputs: Provide the row address for ACTIVATE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one bank
(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE command. Address inputs are referenced
to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during
READ and WRITE commands to determine whether burst chop (on-the-fly) will be
performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 117).
BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,
WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode
register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command.
BA[2:0] are referenced to VREFCA.
CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals
are sampled on the crossing of the positive edge of CK and the negative edge of
CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.
CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal
circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-
pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE
LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks
idle),or active power-down (row active in any bank). CKE is synchronous for power-
down entry and exit and for self refresh entry. CKE is asynchronous for self refresh
exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during
POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF
REFRESH. CKE is referenced to VREFCA.
CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS# pro-
vides for external rank selection on systems with multiple ranks. CS# is considered
part of the command code. CS# is referenced to VREFCA.
LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte
input data is masked when LDM is sampled HIGH along with the input data during a
write access. Although the LDM ball is input-only, the LDM loading is
designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ.
ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal
operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS,
LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS,
and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for
the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is
referenced to VREFCA.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command
being entered and are referenced to VREFCA.
RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input re-
ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ุ 0.8 × VDD and
DC LOW ื 0.2 × VDDQ. RESET# assertion and desertion are asynchronous.
4Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued)
Symbol Type Description
UDM Input Input data mask: UDM is an upper-byte, input mask signal for write data. Upper-
byte input data is masked when UDM is sampled HIGH along with that input data
during a WRITE access. Although the UDM ball is input-only, the UDM loading is
designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ.
DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration.
DQ[7:0] are referenced to VREFDQ.
DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration.
DQ[15:8] are referenced to VREFDQ.
LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data.
Input with write data. Center-aligned to write data.
UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data.
Input with write data. DQS is center-aligned to write data.
VDD Supply Power supply: 1.5V ±0.075V.
VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immuni-
ty.
VREFCA Supply Reference voltage for control, command, and address: VREFCA must be
maintained at all times (including self refresh) for proper device operation.
VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self
refresh) for proper device operation.
VSS Supply Ground.
VSSQ Supply DQ ground: Isolated on the device for improved noise immunity.
ZQ Reference External reference ball for output drive calibration: This ball is tied to an
external 240˖ resistor (RZQ), which is tied to VSSQ.
NC – No connect: These balls should be left unconnected (the ball has no connection to
the DRAM or to other balls).
4Gb: x4, x8, x16 DDR3L SDRAM
Ball Assignments and Descriptions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Package Dimensions
Figure 8: 78-Ball FBGA – x4, x8 (RH)
6.4 CTR
9 ±0.1
0.8 TYP
10.5 ±0.1
9.6 CTR
0.8 TYP
1.1 ±0.1
0.25 MIN
1
A
23789
B
C
D
E
F
G
H
J
K
L
M
N
0.12 AA
0.155
78X Ø0.45
Dimensions apply
to solder balls post-
reflow on Ø0.35 SMD
ball pads.
Seating plane
Ball A1 ID
(covered by SR)
Ball A1 ID
1.8 CTR
Nonconductive
overmold
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
4Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 9: 78-Ball FBGA – x4, x8 (RG)
1.8 CTR
nonconductive
overmold
0.155
Seating plane
0.12 A
Ball A1 ID
(covered by SR) Ball A1 ID
A
0.25 MIN
1.1 ±0.1
6.4 CTR
7.5 ±0.1
0.8 TYP
9.6 CTR
10.6 ±0.1
78X Ø0.47
Dimensions apply
to solder balls post-
reflow on Ø0.42 SMD
ball pads.
0.8 TYP
123789
A
B
C
D
E
F
G
H
J
K
L
M
N
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
4Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 10: 78-Ball FBGA – x4, x8 (DA)
1.8 CTR
Nonconductive
overmold
0.155
Seating plane
0.12 A
Ball A1 ID
(covered by SR) Ball A1 ID
0.29 MIN
1.1 ±0.1
6.4 CTR
8 ±0.1
0.8 TYP
9.6 CTR
10.5 ±0.1
78X Ø0.47
Dimensions apply
to solder balls post-
reflow on Ø0.42 SMD
ball pads.
0.8 TYP
123789
A
B
C
D
E
F
G
H
J
K
L
M
N
A
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
4Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 11: 96-Ball FBGA – x16 (HA)
Ball A1 Index
Dimensions
apply to solder
balls post-reflow
on Ø0.35 SMD
ball pads.
14 ±0.1
0.8 TYP
1.1 ±0.1
12 CTR
Ball A1 Index
(covered by SR)
0.8 TYP
9 ±0.1
0.25 MIN6.4 CTR
96X Ø0.45
9 8 7 3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A 0.12 A
Seating plane
1.8 CTR
Nonconductive
overmold
0.155
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).
4Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 12: 96-Ball FBGA – x16 (LY)
Seating plane
0.12 A
Ball A1 ID
(covered by SR)
Ball A1 ID
A
0.29 MIN
1.1 ±0.1
6.4 CTR
7.5 ±0.1
0.8 TYP
12 CTR
13.5 ±0.1
96X Ø0.47
Dimensions apply
to solder balls post-
reflow on Ø0.42
SMD ball pads.
0.8 TYP
1.8 CTR
Nonconductive
overmold
0.155
123789
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
Notes: 1. All dimensions are in millimeters.
2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
4Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 13: 96-Ball FBGA – x16 (TW)
1.8 CTR
Nonconductive
overmold
0.155
Seating plane
0.12 A
Ball A1 ID
(covered by SR)
Ball A1 ID
0.34 ±0.05
1.1 ±0.1
6.4 CTR
8 ±0.1
0.8 TYP
12 CTR
14 ±0.1
96X Ø0.47
Dimensions apply
to solder balls post-
reflow on Ø0.42 SMD
ball pads.
0.8 TYP
123789
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
A
Notes: 1. All dimensions are in millimeters.
2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu).
4Gb: x4, x8, x16 DDR3L SDRAM
Package Dimensions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Electrical Specifications
Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not im-
plied. Exposure to absolute maximum rating conditions for extended periods may ad-
versely affect reliability.
Table 5: Absolute Maximum Ratings
Symbol Parameter Min Max Unit Notes
VDD VDD supply voltage relative to VSS –0.4 1.975 V 1
VDDQ VDD supply voltage relative to VSSQ –0.4 1.975 V
VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V
TCOperating case temperature – Commercial 0 95 °C 2, 3
Operating case temperature – Industrial –40 95 °C 2, 3
Operating case temperature – Automotive –40 105 °C 2, 3
TSTG Storage temperature –55 150 °C
Notes: 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
greater than 0.6 × VDDQ. When VDD and VDDQ are <500mV, VREF can be ื300mV.
2. MAX operating case temperature. TC is measured in the center of the package.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC dur-
ing operation.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Input/Output Capacitance
Table 6: DDR3L Input/Output Capacitance
Note 1 applies to the entire table
Capacitance
Parameters Sym
DDR3L
-800
DDR3L
-1066
DDR3L
-1333
DDR3L
-1600
DDR3L
-1866
DDR3L
-2133
Unit NotesMin Max Min Max Min Max Min Max Min Max Min Max
CK and CK# CCK 0.8 1.6 0.8 1.6 0.8 1.4 0.8 1.4 0.8 1.3 0.8 1.3 pF
˂C: CK to CK# CDCK 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 pF
Single-end
I/O: DQ, DM CIO 1.4 2.5 1.4 2.5 1.4 2.3 1.4 2.2 1.4 2.1 1.4 2.1 pF 2
Differential
I/O: DQS,
DQS#, TDQS,
TDQS#
CIO 1.4 2.5 1.4 2.5 1.4 2.3 1.4 2.2 1.4 2.1 1.4 2.1 pF
3
˂C: DQS to
DQS#, TDQS,
TDQS#
CDDQS
0.0 0.2 0.0 0.2 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15
pF
3
˂C: DQ to
DQS CDIO
–0.5 0.3 –0.5 0.3 –0.5 0.3 –0.5 0.3 –0.5 0.3 –0.5 0.3 pF 4
Inputs (CTRL,
CMD, ADDR) CI0.75 1.3 0.75 1.3 0.75 1.3 0.75 1.2 0.75 1.2 0.75 1.2 pF 5
˂C: CTRL to
CK CDI_CTRL
–0.5 0.3 –0.5 0.3 –0.4 0.2 –0.4 0.2 –0.4 0.2 –0.4 0.2 pF 6
˂C:
CMD_ADDR
to CK
CDI_CMD
_ADDR
–0.5 0.5 –0.5 0.5 –0.4 0.4 –0.4 0.4 –0.4 0.4 –0.4 0.4
pF
7
ZQ pin
capacitance CZQ
– 3.0 – 3.0 – 3.0 – 3.0 – 3.0 – 3.0 pF
Reset pin
capacitance CRE
– 3.0 – 3.0 – 3.0 – 3.0 – 3.0 – 3.0 pF
Notes: 1. VDD = 1.35V (1.283–1.45V), VDDQ = VDD, VREF = VSS, f = 100 MHz, TC = 25°C. VOUT(DC) = 0.5
× VDDQ, VOUT = 0.1V (peak-to-peak).
2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading.
3. Includes TDQS, TDQS#. CDDQS is for DQS vs. DQS# and TDQS vs. TDQS# separately.
4. CDIO = CIO(DQ) - 0.5 × (CIO(DQS) + CIO(DQS#)).
5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR =
A[n:0], BA[2:0].
6. CDI_CTRL = CI(CTRL) - 0.5 × (CCK(CK) + CCK(CK#)).
7. CDI_CMD_ADDR = CI(CMD_ADDR) - 0.5 × (CCK(CK) + CCK(CK#)).
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Thermal Characteristics
Table 7: Thermal Characteristics
Notes 1–3 apply to entire table
Parameter Symbol Value Units Notes
Operating temperature - Commercial TC0 to 85 °C
Operating temperature - Industrial TC-40 to 95 °C 4
Operating temperature - Automotive TC-40 to105 °C 5
Notes: 1. MAX operating case temperature TC is measured in the center of the package, as shown
below.
2. A thermal solution must be designed to ensure that the device does not exceed the
maximum TC during operation.
3. Device functionality is not guaranteed if the device exceeds maximum TC during
operation.
4. If TC exceeds 85°C, but is less than 95°C, the DRAM must be refreshed manually at 2x re-
fresh, which is a 3.9μs interval refresh rate. The use of self refresh temperature (SRT) or
automatic self refresh (ASR), must be enabled.
5. If TC exceeds 95°C, but less than 105°C, the DRAM must be refreshed manually at 4x re-
fresh, which is a 1.95μs interval refresh rate. The use of self refresh temperature (SRT) or
automatic self refresh (ASR), must be enabled.
Figure 14: Thermal Measurement Point
(L/2)
L
W
(W/2)
Tc test point
4Gb: x4, x8, x16 DDR3L SDRAM
Thermal Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 8: Thermal Impedance
Die Rev. Package Substrate
ˆ
ˆ
JA (°C/W)
Airflow =
0m/s
ˆ
JA (°C/W)
Airflow =
1m/s
ˆ
JA (°C/W)
Airflow =
2m/s
ˆ
JB (°C/W)
ˆ
JC (°C/W)
E
78-ball
Low conduc-
tivity 63.7 49.6 44.0 N/A 4.0
High con-
ductivity 42.3 35.7 32.9 29.7 N/A
96-ball
Low conduc-
tivity 50.4 39.2 35.1 N/A 3.9
High con-
ductivity 31.3 26.1 24.3 19.2 N/A
N
78-ball
Low conduc-
tivity 61.7 47.6 42.6 N/A 5.7
High con-
ductivity 40.6 33.4 31.2 19.1 N/A
96-ball
Low conduc-
tivity 52.1 42.1 38.4 N/A 5.6
High con-
ductivity 32.6 27.9 26.5 12.6 N/A
P
78-ball
Low conduc-
tivity 88.3 70.6 64.1 N/A 10.8
High con-
ductivity 56.5 48.4 45.7 25.5 N/A
96-ball
Low conduc-
tivity 54.3 42.1 37.3 N/A 4.6
High con-
ductivity 34.8 29.0 26.9 16.9 N/A
Note: 1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
4Gb: x4, x8, x16 DDR3L SDRAM
Thermal Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Electrical Specifications – IDD Specifications and Conditions
Within the following IDD measurement tables, the following definitions and conditions
are used, unless stated otherwise:
• LOW: VIN V IL(AC)max; HIGH: VIN VIH(AC)min.
• Midlevel: Inputs are VREF = VDD/2.
•R
ON set to RZQ/7 (34ȍ).
•R
TT,nom set to RZQ/6 (40ȍ).
•R
TT(WR) set to RZQ/2 (120ȍ).
•Q
OFF is enabled in MR1.
• ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)).
• TDQS is disabled in MR1.
• External DQ/DQS/DM load resistor is 25ȍ to VDDQ/2.
• Burst lengths are BL8 fixed.
• AL equals 0 (except in IDD7).
•I
DD specifications are tested after the device is properly initialized.
• Input slew rate is specified by AC parametric test conditions.
• Optional ASR is disabled.
• Read burst type uses nibble sequential (MR0[3] = 0).
• Loop patterns must be executed at least once before current measurements begin.
Table 9: Timing Parameters Used for IDD Measurements – Clock Units
IDD
Parameter
DDR3L
-800
DDR3L
-1066
DDR3L
-1333
DDR3L
-1600
DDR3L
-1866
DDR3L
-2133
Unit
-25E -25 -187E -187 -15E -15 -125E -125 -107 -093
5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 10-10-10 10-10-10 11-11-11 13-13-13 14-14-14
tCK (MIN) IDD 2.5 1.875 1.5 1.25 1.07 0.938 ns
CL IDD 5678 9 10 10 11 13 14CK
tRCD (MIN) IDD 5678 9 10 10 11 13 14CK
tRC (MIN) IDD 20 21 27 28 33 34 38 39 45 50 CK
tRAS (MIN) IDD 15 15 20 20 24 24 28 28 32 36 CK
tRP (MIN) 5678 9 10 10 11 13 14CK
tFAW x4, x8 16 16 20 20 20 20 24 24 26 27 CK
x16 20 20 27 27 30 30 32 32 33 38 CK
tRRD
IDD
x4, x8 4444 4 4 5 5 5 6CK
x16 4466 5 5 6 6 6 7CK
tRFC 1Gb 44 44 59 59 74 74 88 88 103 118 CK
2Gb 64 64 86 86 107 107 128 128 150 172 CK
4Gb 104 104 139 139 174 174 208 208 243 279 CK
8Gb 140 140 187 187 234 234 280 280 328 375 CK
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 10: IDD0 Measurement Loop
CK, CK#
CKE
Sub-
Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
Toggling
Static HIGH
0
0 ACT 00110000000 –
1 D 10000000000 –
2 D 10000000000 –
3 D# 11110000000 –
4 D# 11110000000 –
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed
nRAS PRE 00100000000 –
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
nRC ACT 001100000F0 –
nRC + 1 D 100000000F0 –
nRC + 2 D 100000000F0 –
nRC + 3 D# 111100000F0 –
nRC + 4 D# 111100000F0 –
Repeat cycles nRC + 1 through nRC + 4 until nRC - 1 + nRAS -1; truncate if needed
nRC + nRAS PRE 001000000F0 –
Repeat cycles nRC + 1 through nRC + 4 until 2 × RC - 1; truncate if needed
1 2 × nRC Repeat sub-loop 0, use BA[2:0] = 1
2 4 × nRC Repeat sub-loop 0, use BA[2:0] = 2
3 6 × nRC Repeat sub-loop 0, use BA[2:0] = 3
4 8 × nRC Repeat sub-loop 0, use BA[2:0] = 4
5 10 × nRC Repeat sub-loop 0, use BA[2:0] = 5
6 12 × nRC Repeat sub-loop 0, use BA[2:0] = 6
7 14 × nRC Repeat sub-loop 0, use BA[2:0] = 7
Notes: 1. DQ, DQS, DQS# are midlevel.
2. DM is LOW.
3. Only selected bank (single) active.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 11: IDD1 Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data2
Toggling
Static HIGH
0
0 ACT 00110000000 –
1 D 10000000000 –
2 D 10000000000 –
3 D# 11110000000 –
4 D# 11110000000 –
Repeat cycles 1 through 4 until nRCD - 1; truncate if needed
nRCD RD 0 1 0 1 0 0 0 0 0 0 0 00000000
Repeat cycles 1 through 4 until nRAS - 1; truncate if needed
nRAS PRE 00100000000 –
Repeat cycles 1 through 4 until nRC - 1; truncate if needed
nRC ACT 001100000F0 –
nRC + 1 D 100000000F0 –
nRC + 2 D 100000000F0 –
nRC + 3 D# 111100000F0 –
nRC + 4 D# 111100000F0 –
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1; truncate if needed
nRC + nRCD RD 0 1 0 1 0 0 0 0 0 F 0 00110011
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1; truncate if needed
nRC + nRAS PRE 001000000F0 –
Repeat cycle nRC + 1 through nRC + 4 until 2 × nRC - 1; truncate if needed
1 2 × nRC Repeat sub-loop 0, use BA[2:0] = 1
2 4 × nRC Repeat sub-loop 0, use BA[2:0] = 2
3 6 × nRC Repeat sub-loop 0, use BA[2:0] = 3
4 8 × nRC Repeat sub-loop 0, use BA[2:0] = 4
5 10 × nRC Repeat sub-loop 0, use BA[2:0] = 5
6 12 × nRC Repeat sub-loop 0, use BA[2:0] = 6
7 14 × nRC Repeat sub-loop 0, use BA[2:0] = 7
Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. Only selected bank (single) active.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 12: IDD Measurement Conditions for Power-Down Currents
Name
IDD2P0 Precharge
Power-Down
Current (Slow Exit)1
IDD2P1 Precharge
Power-Down
Current (Fast Exit)1
IDD2Q Precharge
Quiet
Standby Current
IDD3P Active
Power-Down
Current
Timing pattern N/A N/A N/A N/A
CKE LOW LOW HIGH LOW
External clock Toggling Toggling Toggling Toggling
tCK tCK (MIN) IDD tCK (MIN) IDD tCK (MIN) IDD tCK (MIN) IDD
tRC N/A N/A N/A N/A
tRAS N/A N/A N/A N/A
tRCD N/A N/A N/A N/A
tRRD N/A N/A N/A N/A
tRC N/A N/A N/A N/A
CL N/A N/A N/A N/A
AL N/A N/A N/A N/A
CS# HIGH HIGH HIGH HIGH
Command inputs LOW LOW LOW LOW
Row/column addr LOW LOW LOW LOW
Bank addresses LOW LOW LOW LOW
DM LOW LOW LOW LOW
Data I/O Midlevel Midlevel Midlevel Midlevel
Output buffer DQ, DQS Enabled Enabled Enabled Enabled
ODT2Enabled, off Enabled, off Enabled, off Enabled, off
Burst length 8 8 8 8
Active banks None None None All
Idle banks All All All None
Special notes N/A N/A N/A N/A
Notes: 1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast
exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0).
2. “Enabled, off” means the MR bits are enabled, but the signal is LOW.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 35 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 13: IDD2N and IDD3N Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
Toggling
Static HIGH
0
0 D 10000000000 –
1 D 10000000000 –
2 D# 111100000F0 –
3 D# 111100000F0 –
1 4–7 Repeat sub-loop 0, use BA[2:0] = 1
2 8–11 Repeat sub-loop 0, use BA[2:0] = 2
3 12–15 Repeat sub-loop 0, use BA[2:0] = 3
4 16–19 Repeat sub-loop 0, use BA[2:0] = 4
5 20–23 Repeat sub-loop 0, use BA[2:0] = 5
6 24–27 Repeat sub-loop 0, use BA[2:0] = 6
7 28–31 Repeat sub-loop 0, use BA[2:0] = 7
Notes: 1. DQ, DQS, DQS# are midlevel.
2. DM is LOW.
3. All banks closed during IDD2N; all banks open during IDD3N.
Table 14: IDD2NT Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
Toggling
Static HIGH
0
0 D 10000000000 –
1 D 10000000000 –
2 D# 111100000F0 –
3 D# 111100000F0 –
1 4–7 Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0
2 8–11 Repeat sub-loop 0, use BA[2:0] = 2; ODT = 1
3 12–15 Repeat sub-loop 0, use BA[2:0] = 3; ODT = 1
4 16–19 Repeat sub-loop 0, use BA[2:0] = 4; ODT = 0
5 20–23 Repeat sub-loop 0, use BA[2:0] = 5; ODT = 0
6 24–27 Repeat sub-loop 0, use BA[2:0] = 6; ODT = 1
7 28–31 Repeat sub-loop 0, use BA[2:0] = 7; ODT = 1
Notes: 1. DQ, DQS, DQS# are midlevel.
2. DM is LOW.
3. All banks closed.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 36 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 15: IDD4R Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data3
Toggling
Static HIGH
0
0 RD 0 1 0 1 0 0 0 0 0 0 0 00000000
1 D 10000000000 –
2 D# 11110000000 –
3 D# 11110000000 –
4 RD 0 1 0 1 0 0 0 0 0 F 0 00110011
5 D 100000000F0 –
6 D# 111100000F0 –
7 D# 111100000F0 –
1 8–15 Repeat sub-loop 0, use BA[2:0] = 1
2 16–23 Repeat sub-loop 0, use BA[2:0] = 2
3 24–31 Repeat sub-loop 0, use BA[2:0] = 3
4 32–39 Repeat sub-loop 0, use BA[2:0] = 4
5 40–47 Repeat sub-loop 0, use BA[2:0] = 5
6 48–55 Repeat sub-loop 0, use BA[2:0] = 6
7 56–63 Repeat sub-loop 0, use BA[2:0] = 7
Notes: 1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. All banks open.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 16: IDD4W Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data4
Toggling
Static HIGH
0
0 WR 0 1 0 0 1 0 0 0 0 0 0 00000000
1 D 10001000000 –
2 D# 11111000000 –
3 D# 11111000000 –
4 WR 0 1 0 0 1 0 0 0 0 F 0 00110011
5 D 100010000F0 –
6 D# 111110000F0 –
7 D# 111110000F0 –
1 8–15 Repeat sub-loop 0, use BA[2:0] = 1
2 16–23 Repeat sub-loop 0, use BA[2:0] = 2
3 24–31 Repeat sub-loop 0, use BA[2:0] = 3
4 32–39 Repeat sub-loop 0, use BA[2:0] = 4
5 40–47 Repeat sub-loop 0, use BA[2:0] = 5
6 48–55 Repeat sub-loop 0, use BA[2:0] = 6
7 56–63 Repeat sub-loop 0, use BA[2:0] = 7
Notes: 1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the WR command.
4. All banks open.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 17: IDD5B Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data
Toggling
Static HIGH
0 0 REF 00010000000 –
1a
1 D 10000000000 –
2 D 10000000000 –
3 D# 111100000F0 –
4 D# 111100000F0 –
1b 5–8 Repeat sub-loop 1a, use BA[2:0] = 1
1c 9–12 Repeat sub-loop 1a, use BA[2:0] = 2
1d 13–16 Repeat sub-loop 1a, use BA[2:0] = 3
1e 17–20 Repeat sub-loop 1a, use BA[2:0] = 4
1f 21–24 Repeat sub-loop 1a, use BA[2:0] = 5
1g 25–28 Repeat sub-loop 1a, use BA[2:0] = 6
1h 29–32 Repeat sub-loop 1a, use BA[2:0] = 7
2 33–nRFC - 1 Repeat sub-loop 1a through 1h until nRFC - 1; truncate if needed
Notes: 1. DQ, DQS, DQS# are midlevel.
2. DM is LOW.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8
IDD Test
IDD6: Self Refresh Current
Normal Temperature Range
TC = 0°C to +85°C
IDD6ET: Self Refresh Current
Extended Temperature Range
TC = 0°C to +95°C IDD8: Reset2
CKE LOW LOW Midlevel
External clock Off, CK and CK# = LOW Off, CK and CK# = LOW Midlevel
tCK N/A N/A N/A
tRC N/A N/A N/A
tRAS N/A N/A N/A
tRCD N/A N/A N/A
tRRD N/A N/A N/A
tRC N/A N/A N/A
CL N/A N/A N/A
AL N/A N/A N/A
CS# Midlevel Midlevel Midlevel
Command inputs Midlevel Midlevel Midlevel
Row/column addresses Midlevel Midlevel Midlevel
Bank addresses Midlevel Midlevel Midlevel
Data I/O Midlevel Midlevel Midlevel
Output buffer DQ, DQS Enabled Enabled Midlevel
ODT1Enabled, midlevel Enabled, midlevel Midlevel
Burst length N/A N/A N/A
Active banks N/A N/A None
Idle banks N/A N/A All
SRT Disabled (normal) Enabled (extended) N/A
ASR Disabled Disabled N/A
Notes: 1. “Enabled, midlevel” means the MR command is enabled, but the signal is midlevel.
2. During a cold boot RESET (initialization), current reading is valid after power is stable
and RESET has been LOW for 1ms; During a warm boot RESET (while operating), current
reading is valid after RESET has been LOW for 200ns + tRFC.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 19: IDD7 Measurement Loop
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data3
Toggling
Static HIGH
0
0 ACT00110000000 –
1 RDA0101000100000000000
2 D10000000000 –
3 Repeat cycle 2 until nRRD - 1
1
nRRD ACT001101000F0 –
nRRD + 1 RDA 010101010F000110011
nRRD + 2 D 100001000F0 –
nRRD + 3 Repeat cycle nRRD + 2 until 2 × nRRD - 1
2 2 × nRRD Repeat sub-loop 0, use BA[2:0] = 2
3 3 × nRRD Repeat sub-loop 1, use BA[2:0] = 3
44 × nRRD D100003000F0 –
4 × nRRD + 1 Repeat cycle 4 × nRRD until nFAW - 1, if needed
5nFAW Repeat sub-loop 0, use BA[2:0] = 4
6nFAW + nRRD Repeat sub-loop 1, use BA[2:0] = 5
7nFAW + 2 × nRRD Repeat sub-loop 0, use BA[2:0] = 6
8nFAW + 3 × nRRD Repeat sub-loop 1, use BA[2:0] = 7
9nFAW + 4 × nRRD D100007000F0 –
nFAW + 4 × nRRD + 1 Repeat cycle nFAW + 4 × nRRD until 2 × nFAW - 1, if needed
10
2 × nFAW ACT001100000F0 –
2 × nFAW + 1 RDA010100010F000110011
2 × nFAW + 2 D100000000F0 –
2 × nFAW + 3 Repeat cycle 2 × nFAW + 2 until 2 × nFAW + nRRD - 1
11
2 × nFAW + nRRD ACT00110100000 –
2 × nFAW + nRRD + 1 RDA 0 1 01010100000000000
2 × nFAW + nRRD + 2 D 1 0 000100000 –
2 × nFAW + nRRD + 3 Repeat cycle 2 × nFAW + nRRD + 2 until 2 × nFAW + 2 × nRRD - 1
12 2 × nFAW + 2 × nRRD Repeat sub-loop 10, use BA[2:0] = 2
13 2 × nFAW + 3 × nRRD Repeat sub-loop 11, use BA[2:0] = 3
14 2 × nFAW + 4 × nRRD D10000300000 –
2 × nFAW + 4 × nRRD + 1 Repeat cycle 2 × nFAW + 4 × nRRD until 3 × nFAW - 1, if needed
15 3 × nFAW Repeat sub-loop 10, use BA[2:0] = 4
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 19: IDD7 Measurement Loop (Continued)
CK, CK#
CKE
Sub-Loop
Cycle
Number
Command
CS#
RAS#
CAS#
WE#
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
Data3
Toggling
Static HIGH
16 3 × nFAW + nRRD Repeat sub-loop 11, use BA[2:0] = 5
17 3 × nFAW + 2 × nRRD Repeat sub-loop 10, use BA[2:0] = 6
18 3 × nFAW + 3 × nRRD Repeat sub-loop 11, use BA[2:0] = 7
19 3 × nFAW + 4 × nRRD D10000700000 –
3 × nFAW + 4 × nRRD + 1 Repeat cycle 3 × nFAW + 4 × nRRD until 4 × nFAW - 1, if needed
Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the RD command.
4. AL = CL-1.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – IDD Specifications and Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Electrical Characteristics – Operating IDD Specifications
Table 20: IDD Maximum Limits Die Rev. E for 1.35/1.5V Operation
Speed Bin DDR3/3L
-1066
DDR3/3L
-1333
DDR3/3L
-1600
DDR3/3L
-1866 Units Notes
Parameter Symbol Width
Operating current 0: One bank
ACTIVATE-to-PRECHARGE
IDD0 x4, x8 44 47 55 62 mA 1, 2
x16 55 58 66 73 mA 1, 2
Operating current 1: One bank
ACTIVATE-to-READ-to-PRECHARGE
IDD1 x4 53 57 61 65 mA 1, 2
x8 59 62 66 70 mA 1, 2
x16 80 84 87 91 mA 1, 2
Precharge power-down current:
Slow exit
IDD2P0 All 18 18 18 18 mA 1, 2
Precharge power-down current:
Fast exit
IDD2P1 All 26 28 32 37 mA 1, 2
Precharge quiet standby current IDD2Q All 27 28 32 35 mA 1, 2
Precharge standby current IDD2N All 28 29 32 35 mA 1, 2
Precharge standby ODT current IDD2NT x4, x8 32 35 39 42 mA 1, 2
x16 35 39 42 45 mA 1, 2
Active power-down current IDD3P All 32 35 38 41 mA 1, 2
Active standby current IDD3N x4, x8 32 35 38 41 mA 1, 2
x16 41 45 47 49 mA 1, 2
Burst read operating current IDD4R x4 113 130 147 164 mA 1, 2
x8 123 140 157 174 mA 1, 2
x16 185 202 235 252 mA 1, 2
Burst write operating current IDD4W x4 87 103 118 133 mA 1, 2
x8 95 110 125 141 mA 1, 2
x16 137 152 171 190 mA 1, 2
Burst refresh current IDD5B All 224 228 235 242 mA 1, 2
Room temperature self refresh IDD6 All 20 20 20 20 mA 1, 2, 3
Extended temperature self refresh IDD6ET All 25 25 25 25 mA 2, 4
All banks interleaved read current IDD7 x4, x8 160 190 220 251 mA 1, 2
x16 198 217 243 274 mA 1, 2
Reset current IDD8 All IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
mA 1, 2
Notes: 1. TC = 85°C; SRT and ASR are disabled.
2. Enabling ASR could increase IDDx by up to an additional 2mA.
3. Restricted to TC (MAX) = 85°C.
4. TC = 85°C; ASR and ODT are disabled; SRT is enabled.
5. The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0°C ื TC ื +85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – Operating IDD Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
Table 21: IDD Maximum Limits Die Rev. N for 1.35V/1.5V Operation
Speed Bin DDR3/3L
-1066
DDR3/3L
-1333
DDR3/3L
-1600
DDR3/3L
-1866
DDR3/3L
-2133 Units Notes
Parameter Symbol Width
Operating current 0: One bank
ACTIVATE-to-PRECHARGE
IDD0 x4, x8 42 45 47 49 51 mA 1, 2
x16 52 55 57 59 61 mA 1, 2
Operating current 1: One bank
ACTIVATE-to-READ-to-PRE-
CHARGE
IDD1 x4 50 53 56 59 62 mA 1, 2
x8 55 58 61 64 67 mA 1, 2
x16 75 78 81 84 87 mA 1, 2
Precharge power-down cur-
rent: Slow exit
IDD2P0 All 8 8 8 8 8 mA 1, 2
Precharge power-down cur-
rent: Fast exit
IDD2P1 All 10 12 14 16 18 mA 1, 2
Precharge quiet standby cur-
rent
IDD2Q All 20 22 24 26 28 mA 1, 2
Precharge standby current IDD2N All 20 22 24 26 28 mA 1, 2
Precharge standby ODT current IDD2NT x4, x8 24 26 28 30 32 mA 1, 2
x16 27 29 31 33 35 mA 1, 2
Active power-down current IDD3P All 22 24 26 28 30 mA 1, 2
Active standby current IDD3N x4, x8 26 28 30 32 34 mA 1, 2
x16 34 36 38 40 42 mA 1, 2
Burst read operating current IDD4R x4 65 75 85 95 105 mA 1, 2
x8 75 85 95 105 115 mA 1, 2
x16 135 145 155 165 175 mA 1, 2
Burst write operating current IDD4W x4 65 75 85 95 105 mA 1, 2
x8 75 85 95 105 115 mA 1, 2
x16 135 145 155 165 175 mA 1, 2
Burst refresh current IDD5B All 165 170 175 180 185 mA 1, 2
Room temperature self refresh IDD6 All 12 12 12 12 12 mA 1, 2, 3
Extended temperature self re-
fresh
IDD6ET All 16 16 16 16 16 mA 2, 4
All banks interleaved read cur-
rent
IDD7 x4, x8 110 120 130 140 150 mA 1, 2
x16 170 180 190 200 210 mA 1, 2
Reset current IDD8 All IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
IDD2P +
2mA
mA 1, 2
Notes: 1. TC = 85°C; SRT and ASR are disabled.
2. Enabling ASR could increase IDDx by up to an additional 2mA.
3. Restricted to TC (MAX) = 85°C.
4. TC = 85°C; ASR and ODT are disabled; SRT is enabled.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – Operating IDD Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
5. The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0°C ื TC ื 85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – Operating IDD Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 22: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation
Speed Bin DDR3/3L
-1600
DDR3/3L
-1866
DDR3/3L
-2133 Units Notes
Parameter Symbol Width
Operating current 0: One bank ACTI-
VATE-to-PRECHARGE IDD0
x4, x8 28 29 31 mA 1, 2
X16 32 32 34
Operating current 1: One bank ACTI-
VATE-to-READ-to-PRECHARGE IDD1
x4, x8 43 44 47 mA 1, 2
x16 45 46 54
Precharge power-down current: Slow
exit IDD2P0
x4, x8 10 11 12 mA 1, 2
x16 12 12 12
Precharge power-down current: Fast
exit IDD2P1
x4, x8 11 11 13 mA 1, 2
x16 12 12 14
Precharge quiet standby current IDD2Q ALL 15 15 17 mA 1, 2
Precharge standby current IDD2N
x4, x8 16 17 22 mA 1, 2
x16 17 17 22
Precharge standby ODT current IDD2NT
x4, x8 20 22 27 mA 1, 2
x16 22 23 28
Active power-down current IDD3P
x4,x8 15 15 17 mA 1, 2
x16 17 17 19
Active standby current IDD3N
x4, x8 20 21 23 mA 1, 2
x16 22 23 25
Burst read operating current IDD4R
x4, x8 90 90 110 mA 1, 2
x16 110 120 130
Burst write operating current IDD4W
x4, x8 90 90 110 mA 1, 2
16 120 130 140
Burst refresh current IDD5B
x4, x8 152 152 160 mA 1, 2
x16 156 156 160
Self refresh IDD6 ALL 15 15 15 mA 1, 2, 3
Extended temperature self refresh IDD6ET ALL 23 23 23 mA 2, 4
All banks interleaved read current IDD7
x4, x8 130 146 150 mA 1, 2
x16 132 147 160
Reset current IDD8 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA mA 1, 2
Notes: 1. TC = 85°C; SRT and ASR are disabled.
2. Enabling ASR could increase IDDx by up to an additional 2mA.
3. Restricted to TC (MAX) = 85°C.
4. TC = 85°C; ASR and ODT are disabled; SRT is enabled.
5. The IDD values must be derated (increased) on IT-option devices when operated outside
of the range 0°C ื TC ื +85°C:
5a. When TC < 0°C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must
be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – Operating IDD Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
5b. When TC > 85°C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B
must be derated by 2%; IDD2Px must be derated by 30%.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – Operating IDD Specifications
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Electrical Specifications – DC and AC
DC Operating Conditions
Table 23: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions
All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Unit Notes
Supply voltage VDD 1.283 1.35 1.45 V 1–7
I/O supply voltage VDDQ 1.283 1.35 1.45 V 1–7
Input leakage current
Any input 0V ื VIN ื VDD, VREF pin 0V ื VIN ื 1.1V
(All other pins not under test = 0V)
II–2 – 2 μA
VREF supply leakage current
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
IVREF –1 – 1 μA 8, 9
Notes: 1. VDD and VDDQ must track one another. VDDQ must be ื VDD. VSS = VSSQ.
2. VDD and VDDQ may include AC noise of ±50mV (250 kHz to 20 MHz) in addition to the
DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC
timing parameters.
3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average
of VDD/VDDQ(t) over a very long period of time (for example, 1 second).
4. Under these supply voltages, the device operates to this DDR3L specification.
5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications.
6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifi-
cations under the same speed timings as defined for this device.
7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is
in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switch-
ing (page 138)).
8. The minimum limit requirement is for testing purposes. The leakage current on the VREF
pin should be minimal.
9. VREF (see Table 24).
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Input Operating Conditions
Table 24: DDR3L 1.35V DC Electrical Characteristics and Input Conditions
All voltages are referenced to VSS
Parameter/Condition Symbol Min Nom Max Unit Notes
VIN low; DC/commands/address busses VIL VSS N/A See Table 25 V
VIN high; DC/commands/address busses VIH See Table 25 N/A VDD V
Input reference voltage command/address bus VREFCA(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 1, 2
I/O reference voltage DQ bus VREFDQ(DC) 0.49 × VDD 0.5 × VDD 0.51 × VDD V 2, 3
I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 × VDD VDD V4
Command/address termination voltage
(system level, not direct DRAM input)
VTT – 0.5 × VDDQ –V5
Notes: 1. VREFCA(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFCA may not exceed
±1% × VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not ex-
ceed ±2% of VREFCA(DC).
2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifi-
cations if the DRAM induces additional AC noise greater than 20 MHz in frequency.
3. VREFDQ(DC) is expected to be approximately 0.5 × VDD and to track variations in the DC
level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed
±1% × VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not ex-
ceed ±2% of VREFDQ(DC).
4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH,
within restrictions outlined in the SELF REFRESH section.
5. VTT is not applied directly to the device. VTT is a system supply for signal termination re-
sistors. Minimum and maximum values are system-dependent.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 25: DDR3L 1.35V Input Switching Conditions – Command and Address
Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866/2133 Units
Command and Address
Input high AC voltage: Logic 1 VIH(AC160),min5160 160 – mV
VIH(AC135),min5135 135 135 mV
VIH(AC125),min5– – 125 mV
Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV
Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV
Input low AC voltage: Logic 0 VIL(AC125),min5– – –125 mV
VIL(AC135),min5–135 –135 –135 mV
VIL(AC160),min5–160 –160 – mV
DQ and DM
Input high AC voltage: Logic 1 VIH(AC160),min5160 160 – mV
VIH(AC135),min5135 135 135 mV
VIH(AC125),min5– – 130 mV
Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV
Input low DC voltage: Logic 0 VIL(DC90),min –90 –90 –90 mV
Input low AC voltage: Logic 0 VIL(AC125),min5– – –130 mV
VIL(AC135),min5–135 –135 –135 mV
VIL(AC160),min5–160 –160 – mV
Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All
slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ
and DM inputs.
2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC).
3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC).
4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is
900mV (peak-to-peak).
5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and
VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/
command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min
with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min
with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 26: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#)
Parameter/Condition Symbol Min Max Units Notes
Differential input logic high – slew VIH,diff(AC)slew 180 N/A mV 4
Differential input logic low – slew VIL,diff(AC)slew N/A –180 mV 4
Differential input logic high VIH,diff(AC) 2 × (VIH(AC) - VREF)V
DD/VDDQ mV 5
Differential input logic low VIL,diff(AC) VSS/VSSQ 2 × (VIL(AC) - VREF)mV 6
Differential input crossing voltage
relative to VDD/2 for DQS, DQS#; CK,
CK#
VIX VREF(DC) - 150 VREF(DC) + 150 mV 5, 7, 9
Differential input crossing voltage
relative to VDD/2 for CK, CK# VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 5, 7–9
Single-ended high level for strobes VSEH
VDDQ/2 + 160 VDDQ mV 5
Single-ended high level for CK, CK# VDD/2 + 160 VDD mV 5
Single-ended low level for strobes VSEL
VSSQ VDDQ/2 - 160 mV 6
Single-ended low level for CK, CK# VSS VDD/2 - 160 mV 6
Notes: 1. Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ.
2. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe.
3. Differential input slew rate = 2 V/ns.
4. Defines slew rate reference points, relative to input crossing voltages.
5. Minimum DC limit is relative to single-ended signals; overshoot specifications are appli-
cable.
6. Maximum DC limit is relative to single-ended signals; undershoot specifications are ap-
plicable.
7. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device,
and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which
differential input signals must cross.
8. The VIX extended range (±175mV) is allowed only for the clock; this VIX extended range
is only allowed when the following conditions are met: The single-ended input signals
are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 ±250mV, and
the differential slew rate of CK, CK# is greater than 3 V/ns.
9. VIX must provide 25mV (single-ended) of the voltages separation.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 15: DDR3L 1.35V Input Signal
0.0V
VREF - 90mV
VREF = VDD/2
VDD
.51 x
VIL(AC)
VIL(DC)
VREFDQ - AC noise
VREFDQ - DC error
VREFDQ + DC error
VREFDQ + AC noise
VIH(DC)
VIH(AC)
VDD
VDD + 0.4V
Narrow pulse width
VSS - 0.40V
Narrow pulse width
VDDQ
VDDQ + 0.4V
Overshoot
VSS - 0.40V
Undershoot
VSS
VIL MIN(AC)
VIL MIN(DC)
MAX 2% Total
DC MIN
VREF
VREF DC MAX
MAX 2% Total
VIH MIN(DC)
VIH MIN(AC)
Minimum VIL and VIH levels
VIH(DC)
VIH(AC)
VIL(AC)
VIL(DC)
VIL and VIH levels with ringback
VREF DC MAX + 1%
VREF DC MIN - 1% VDD
VREF + 90mV
VREF + 125/135/160mV
VREF - 125/135/160mV
VDD
.49 x
Note: 1. Numbers in diagrams reflect nominal values.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DDR3L 1.35V AC Overshoot/Undershoot Specification
Table 27: DDR3L Control and Address Pins
Parameter DDR3L-800 DRR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 DDR3L-2133
Maximum peak ampli-
tude allowed for over-
shoot area
(see Figure 16)
0.4V 0.4V 0.4V 0.4V 0.4V 0.4V
Maximum peak ampli-
tude allowed for under-
shoot area
(see Figure 17)
0.4V 0.4V 0.4V 0.4V 0.4V 0.4V
Maximum overshoot area
above VDD (see Figure 16) 0.67 V/ns 0.5 V/ns 0.4 V/ns 0.33 V/ns 0.28 V/ns 0.25 V/ns
Maximum undershoot
area below VSS (see Fig-
ure 17)
0.67 V/ns 0.5 V/ns 0.4 V/ns 0.33 V/ns 0.28 V/ns 0.25 V/ns
Table 28: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins
Parameter DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 DDR3L-2133
Maximum peak ampli-
tude allowed for over-
shoot area
(see Figure 16)
0.4V 0.4V 0.4V 0.4V 0.4V 0.4V
Maximum peak ampli-
tude allowed for under-
shoot area
(see Figure 17)
0.4V 0.4V 0.4V 0.4V 0.4V 0.4V
Maximum overshoot area
above VDD/VDDQ (see Fig-
ure 16)
0.25 V/ns 0.19 V/ns 0.15 V/ns 0.13 V/ns 0.11 V/ns 0.10 V/ns
Maximum undershoot
area below VSS/VSSQ (see
Figure 17)
0.25 V/ns 0.19 V/ns 0.15 V/ns 0.13 V/ns 0.11 V/ns 0.10 V/ns
Figure 16: Overshoot
Maximum amplitude
Overshoot area
VDD/VDDQ
Time (ns)
Volts (V)
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 17: Undershoot
Maximum amplitude
Undershoot area
VSS/VSSQ
Time (ns)
Volts (V)
Figure 18: VIX for Differential Signals
CK, DQS
VDD/2, VDDQ/2VDD/2, VDDQ/2
VIX
VIX
CK#, DQS#
VDD, VDDQ
CK, DQS
VDD, VDDQ
VSS, VSSQ
CK#, DQS#
VSS, VSSQ
XX
XX
XX
XX
VIX
VIX
Figure 19: Single-Ended Requirements for Differential Signals
VSS or VSSQ
VDD or VDDQ
VSEL,max
VSEH,min
VSEH
VSEL
CK or DQS
VDD/2 or VDDQ/2
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 20: Definition of Differential AC-Swing and tDVAC
VIH,diff(AC)min
0.0
VIL,diff,max
tDVAC
VIH,diff,min
VIL,diff(AC)max
Half cycle tDVAC
CK - CK#
DQS - DQS#
Table 29: DDR3L 1.35V – Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC
Ringback
Slew Rate (V/ns)
DDR3L-800/1066/1333/1600 DDR3L-1866/2133
tDVAC at
320mV (ps)
tDVAC at
270mV (ps)
tDVAC at
270mV (ps)
tDVAC at
250mV (ps)
tDVAC at
260mV (ps)
>4.0 189 201 163 168 176
4.0 189 201 163 168 176
3.0 162 179 140 147 154
2.0 109 134 95 105 111
1.8 91 119 80 91 97
1.6 69 100 62 74 78
1.4 40 76 37 52 55
1.2 Note 1 44 5 22 24
1.0 Note 1
<1.0 Note 1
Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals
Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate be-
tween the last crossing of VREF and the first crossing of VIH(AC)min. Setup (tIS and tDS)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of VREF and the first crossing of VIL(AC)max.
Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate be-
tween the last crossing of VIL(DC)max and the first crossing of VREF. Hold (tIH and tDH)
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of VIH(DC)min and the first crossing of VREF (see Figure 21 (page 57)).
Table 30: Single-Ended Input Slew Rate Definition
Input Slew Rates
(Linear Signals) Measured
CalculationInput Edge From To
Setup
Rising VREF VIH(AC),min
VIH(AC),min - VREF
ǻTRSse
Falling VREF VIL(AC),max
VREF - VIL(AC),max
ǻTFSse
Hold
Rising VIL(DC),max VREF
VREF - VIL(DC),max
ǻTFHse
Falling VIH(DC),min VREF
VIH(DC),min - VREF
ǻTRSHse
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 21: Nominal Slew Rate Definition for Single-Ended Input Signals
ǻTRSse
ǻTFSse
ǻTRHse
ǻTFHse
VREFDQ or
VREFCA
VIH(AC)min
VIH(DC)min
VIL(AC)max
VIL(DC)max
VREFDQ or
VREFCA
VIH(AC)min
VIH(DC)min
VIL(AC)max
VIL(DC)max
Setup
Hold
Single-ended input voltage (DQ, CMD, ADDR)
Single-ended input voltage (DQ, CMD, ADDR)
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and meas-
ured, as shown in Table 31 and Figure 22. The nominal slew rate for a rising signal is
defined as the slew rate between VIL,diff,max and VIH,diff,min. The nominal slew rate for a
falling signal is defined as the slew rate between VIH,diff,min and VIL,diff,max.
Table 31: DDR3L 1.35V Differential Input Slew Rate Definition
Differential Input
Slew Rates
(Linear Signals) Measured
CalculationInput Edge From To
CK and
DQS
reference
Rising VIL,diff,max VIH,diff,min
VIH,diff,min - VIL,diff,max
ǻTRdiff
Falling VIH,diff,min VIL,diff,max
VIH,diff,min - VIL,diff,max
ǻTFdiff
Figure 22: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
ǻTRdiff
ǻTFdiff
VIH,diff,min
VIL,diff,max
0
Differential input voltage (DQS, DQS#; CK, CK#)
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Specifications – DC and AC
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
ODT Characteristics
The ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the
DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values
and a functional representation are listed in Table 32 and Table 33 (page 60). The indi-
vidual pull-up and pull-down resistors (RTT(PU) and RTT(PD)) are defined as follows:
•RTT(PU) = (VDDQ - VOUT)/|IOUT|, under the condition that RTT(PD) is turned off
•RTT(PD) = (VOUT)/|IOUT|, under the condition that RTT(PU) is turned off
Figure 23: ODT Levels and I-V Characteristics
RTT(PU)
RTT(PD)
ODT
Chip in termination mode
VDDQ
DQ
VSSQ
IOUT = IPD - IPU
IPU
IPD
IOUT
VOUT
To
other
circuitry
such as
RCV, . . .
Table 32: On-Die Termination DC Electrical Characteristics
Parameter/Condition Symbol Min Nom Max Unit Notes
RTT effective impedance RTT(EFF) See Table 33 (page 60) 1, 2
Deviation of VM with respect to
VDDQ/2
˂VM –5 5 % 1, 2, 3
Notes: 1. Tolerance limits are applicable after proper ZQ calibration has been performed at a
stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to ODT Sensitivity (page
61) if either the temperature or voltage changes after calibration.
2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current
I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]:
RTT = VIH(AC) - VIL(AC)
I(VIH(AC)) - I(VIL(AC))
3. Measure voltage (VM) at the tested pin with no load:
ǻVM = – 1
2 × VM
VDDQ
× 100
4. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).
4Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
1.35V ODT Resistors
Table 33 provides an overview of the ODT DC electrical characteristics. The values pro-
vided are not specification requirements; however, they can be used as design guide-
lines to indicate what RTT is targeted to provide:
•R
TT 120ȍ is made up of RTT120(PD240) and RTT120(PU240)
•R
TT 60ȍ is made up of RTT60(PD120) and RTT60(PU120)
•R
TT 40ȍ is made up of RTT40(PD80) and RTT40(PU80)
•R
TT 30ȍ is made up of RTT30(PD60) and RTT30(PU60)
•R
TT 20ȍ is made up of RTT20(PD40) and RTT20(PU40)
Table 33: 1.35V RTT Effective Impedance
MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Units
0, 1, 0 ˖RTT,120PD240 0.2 × VDDQ 0.6 1.0 1.15 RZQ/1
0.5 × VDDQ 0.9 1.0 1.15 RZQ/1
0.8 × VDDQ 0.9 1.0 1.45 RZQ/1
RTT,120PU240 0.2 × VDDQ 0.9 1.0 1.45 RZQ/1
0.5 × VDDQ 0.9 1.0 1.15 RZQ/1
0.8 × VDDQ 0.6 1.0 1.15 RZQ/1
˖VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/2
0, 0, 1 ˖RTT,60PD120 0.2 × VDDQ 0.6 1.0 1.15 RZQ/2
0.5 × VDDQ 0.9 1.0 1.15 RZQ/2
0.8 × VDDQ 0.9 1.0 1.45 RZQ/2
RTT,60PU120 0.2 × VDDQ 0.9 1.0 1.45 RZQ/2
0.5 × VDDQ 0.9 1.0 1.15 RZQ/2
0.8 × VDDQ 0.6 1.0 1.15 RZQ/2
˖VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/4
0, 1, 1 ˖RTT,40PD80 0.2 × VDDQ 0.6 1.0 1.15 RZQ/3
0.5 × VDDQ 0.9 1.0 1.15 RZQ/3
0.8 × VDDQ 0.9 1.0 1.45 RZQ/3
RTT,40PU80 0.2 × VDDQ 0.9 1.0 1.45 RZQ/3
0.5 × VDDQ 0.9 1.0 1.15 RZQ/3
0.8 × VDDQ 0.6 1.0 1.15 RZQ/3
˖VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/6
1, 0, 1 ˖RTT,30PD60 0.2 × VDDQ 0.6 1.0 1.15 RZQ/4
0.5 × VDDQ 0.9 1.0 1.15 RZQ/4
0.8 × VDDQ 0.9 1.0 1.45 RZQ/4
RTT,30PU60 0.2 × VDDQ 0.9 1.0 1.45 RZQ/4
0.5 × VDDQ 0.9 1.0 1.15 RZQ/4
0.8 × VDDQ 0.6 1.0 1.15 RZQ/4
˖VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/8
4Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 33: 1.35V RTT Effective Impedance (Continued)
MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Units
1, 0, 0 ˖RTT,20PD40 0.2 × VDDQ 0.6 1.0 1.15 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.9 1.0 1.45 RZQ/6
RTT,20PU40 0.2 × VDDQ 0.9 1.0 1.45 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.6 1.0 1.15 RZQ/6
˖VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/12
ODT Sensitivity
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 32 and Table 33 can be expected to widen according to Table 34
and Table 35.
Table 34: ODT Sensitivity Definition
Symbol Min Max Unit
RTT 0.9 - dRTTdT × |DT| - dRTTdV × |DV| 1.6 + dRTTdT × |DT| + dRTTdV × |DV| RZQ/(2, 4, 6, 8, 12)
Note: 1. ˂T = T - T(@ calibration), ˂V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
Table 35: ODT Temperature and Voltage Sensitivity
Change Min Max Unit
dRTTdT 0 1.5 %/°C
dRTTdV 0 0.15 %/mV
Note: 1. ˂T = T - T(@ calibration), ˂V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ.
ODT Timing Definitions
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 24. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another de-
fines when ODT turns on or off dynamically. Table 36 and Table 37 (page 62) outline
and provide definition and measurement references settings for each parameter.
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
4Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 24: ODT Timing Reference Load
Timing reference point
DQ, DM
DQS, DQS#
TDQS, TDQS#
DUT
V
REF
V
TT
= V
SSQ
V
DDQ
/2
ZQ
RZQ = 240ȍ
V
SSQ
R
TT
= 25ȍ
CK, CK#
Table 36: ODT Timing Definitions
Symbol Begin Point Definition End Point Definition Figure
tAON Rising edge of CK – CK# defined by the end
point of ODTLon
Extrapolated point at VSSQ Figure 25 (page 63)
tAOF Rising edge of CK – CK# defined by the end
point of ODTLoff
Extrapolated point at VRTT,nom Figure 25 (page 63)
tAONPD Rising edge of CK – CK# with ODT first being
registered HIGH
Extrapolated point at VSSQ Figure 26 (page 63)
tAOFPD Rising edge of CK – CK# with ODT first being
registered LOW
Extrapolated point at VRTT,nom Figure 26 (page 63)
tADC Rising edge of CK – CK# defined by the end
point of ODTLcnw, ODTLcwn4, or ODTLcwn8
Extrapolated points at VRTT(WR) and
VRTT,nom
Figure 27 (page 64)
Table 37: DDR3L(1.35V) Reference Settings for ODT Timing Measurements
Measured
Parameter RTT,nom Setting RTT(WR) Setting VSW1 VSW2
tAON RZQ/4 (60˖N/A 50mV 100mV
RZQ/12 (20˖N/A 100mV 200mV
tAOF RZQ/4 (60˖N/A 50mV 100mV
RZQ/12 (20˖N/A 100mV 200mV
tAONPD RZQ/4 (60˖N/A 50mV 100mV
RZQ/12 (20˖N/A 100mV 200mV
tAOFPD RZQ/4 (60˖N/A 50mV 100mV
RZQ/12 (20˖N/A 100mV 200mV
tADC RZQ/12 (20˖RZQ/2 (20˖200mV 250mV
4Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 25: tAON and tAOF Definitions
CK
CK#
tAON
VSSQ
DQ, DM
DQS, DQS#
TDQS, TDQS#
Begin point: Rising edge of CK - CK#
defined by the end point of ODTLon
VSW1
End point: Extrapolated point at VSSQ
TSW1
TSW2
CK
CK#
VDDQ/2
tAOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTLoff
End point: Extrapolated point at VRTT,nom
VRTT,nom
VSSQ
tAON tAOF
VSW2 VSW2
VSW1
TSW1
TSW1
Figure 26: tAONPD and tAOFPD Definitions
CK
CK#
tAONPD
VSSQ
DQ, DM
DQS, DQS#
TDQS, TDQS#
Begin point: Rising edge of CK - CK#
with ODT first registered high
VSW1
End point: Extrapolated point at VSSQ
TSW2
CK
CK#
VDDQ/2
tAOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered low
End point: Extrapolated point at VRTT,nom
VRTT,nom
VSSQ
tAONPD tAOFPD
TSW1
TSW2
TSW1
VSW2 VSW2
VSW1
4Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 27: tADC Definition
CK
CK#
tADC
DQ, DM
DQS, DQS#
TDQS, TDQS#
End point:
Extrapolated
point at VRTT,nom
TSW21
tADC
End point: Extrapolated point at VRTT(WR)
VDDQ/2
VSSQ
VRTT,nom
VRTT(WR)
VRTT,nom
Begin point: Rising edge of CK - CK#
defined by the end point of ODTLcnw
Begin point: Rising edge of CK - CK# defined by
the end point of ODTLcwn4 or ODTLcwn8
TSW11
VSW1
VSW2
TSW12
TSW22
4Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Output Driver Impedance
The output driver impedance is selected by MR1[5,1] during initialization. The selected
value is able to maintain the tight tolerances specified if proper ZQ calibration is per-
formed. Output specifications refer to the default output driver unless specifically sta-
ted otherwise. A functional representation of the output buffer is shown below. The out-
put driver impedance RON is defined by the value of the external reference resistor RZQ
as follows:
•RON,x = RZQ/y (with RZQ = 240ȍ ±1%; x = 34ȍ or 40ȍ with y = 7 or 6, respectively)
The individual pull-up and pull-down resistors RON(PU) and RON(PD) are defined as fol-
lows:
•RON(PU) = (VDDQ - VOUT)/|IOUT|, when RON(PD) is turned off
•RON(PD) = (VOUT)/|IOUT|, when RON(PU) is turned off
Figure 28: Output Driver
RON(PU)
RON(PD)
Output driver
To
other
circuitry
such as
RCV, . . .
Chip in drive mode
VDDQ
VSSQ
IPU
IPD
IOUT
VOUT
DQ
4Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
34 Ohm Output Driver Impedance
The 34ȍ driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings
and specifications listed herein apply to the 34ȍ driver only. Its impedance RON is de-
fined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with
nominal RZQ = 240ȍ ±1%) and is actually 34.3ȍ ±1%.
Table 38: DDR3L 34 Ohm Driver Impedance Characteristics
MR1
[5, 1] RON Resistor VOUT Min Nom Max Units
0, 1 ˖RON,34PD 0.2 × VDDQ 0.6 1.0 1.15 RZQ/7
0.5 × VDDQ 0.9 1.0 1.15 RZQ/7
0.8 × VDDQ 0.9 1.0 1.45 RZQ/7
RON,34PU 0.2 × VDDQ 0.9 1.0 1.45 RZQ/7
0.5 × VDDQ 0.9 1.0 1.15 RZQ/7
0.8 × VDDQ 0.6 1.0 1.15 RZQ/7
Pull-up/pull-down mismatch (MMPUPD)V
IL(AC) to VIH(AC) –10 N/A 10 %
Notes: 1. Tolerance limits assume RZQ of 240˖±1% and are applicable after proper ZQ calibra-
tion has been performed at a stable temperature and voltage: VDDQ = VDD; VSSQ = VSS).
Refer to DDR3L 34 Ohm Output Driver Sensitivity (page 68) if either the temperature
or the voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-
ure both RON(PU) and RON(PD) at 0.5 × VDDQ:
MMPUPD = × 100
RON(PU) - RON(PD)
RON,nom
3. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).
A larger maximum limit will result in slightly lower minimum currents.
4Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DDR3L 34 Ohm Driver
Using Table 39, the 34ȍ driver’s current range has been calculated and summarized in
Table 40 (page 67) VDD = 1.35V, Table 41 for VDD = 1.45V, and Table 42 (page 68) for
VDD = 1.283V. The individual pull-up and pull-down resistors RON34(PD) and RON34(PU)
are defined as follows:
•RON34(PD) = (VOUT)/|IOUT|; RON34(PU) is turned off
•RON34(PU) = (VDDQ - VOUT)/|IOUT|; RON34(PD) is turned off
Table 39: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations
RON Min Nom Max Unit
RZQ = 240˖ 237.6 240 242.4 ˖
RZQ/7 = (240˖ 33.9 34.3 34.6 ˖
MR1[5,1] RON Resistor VOUT Min Nom Max Unit
0, 1 ˖RON34(PD) 0.2 × VDDQ 20.4 34.3 38.1 ˖
0.5 × VDDQ 30.5 34.3 38.1 ˖
0.8 × VDDQ 30.5 34.3 48.5 ˖
RON34(PU) 0.2 × VDDQ 30.5 34.3 48.5 ˖
0.5 × VDDQ 30.5 34.3 38.1 ˖
0.8 × VDDQ 20.4 34.3 38.1 ˖
Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.35V
MR1[5,1] RON Resistor VOUT Max Nom Min Unit
0, 1 ˖RON34(PD) IOL @ 0.2 × VDDQ 13.3 7.9 7.1 mA
IOL @ 0.5 × VDDQ 22.1 19.7 17.7 mA
IOL @ 0.8 × VDDQ 35.4 31.5 22.3 mA
RON34(PU) IOH @ 0.2 × VDDQ 35.4 31.5 22.3 mA
IOH @ 0.5 × VDDQ 22.1 19.7 17.7 mA
IOH @ 0.8 × VDDQ 13.3 7.9 7.1 mA
Table 41: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.45V
MR1[5,1] RON Resistor VOUT Max Nom Min Unit
0, 1 ˖RON34(PD) IOL @ 0.2 × VDDQ 14.2 8.5 7.6 mA
IOL @ 0.5 × VDDQ 23.7 21.1 19.0 mA
IOL @ 0.8 × VDDQ 38.0 33.8 23.9 mA
RON34(PU) IOH @ 0.2 × VDDQ 38.0 33.8 23.9 mA
IOH @ 0.5 × VDDQ 23.7 21.1 19.0 mA
IOH @ 0.8 × VDDQ 14.2 8.5 7.6 mA
4Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 42: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.283
MR1[5,1] RON Resistor VOUT Max Nom Min Unit
0, 1 ˖RON34(PD) IOL @ 0.2 × VDDQ 12.6 7.5 6.7 mA
IOL @ 0.5 × VDDQ 21.0 18.7 16.8 mA
IOL @ 0.8 × VDDQ 33.6 29.9 21.2 mA
RON34(PU) IOH @ 0.2 × VDDQ 33.6 29.9 21.2 mA
IOH @ 0.5 × VDDQ 21.0 18.7 16.8 mA
IOH @ 0.8 × VDDQ 12.6 7.5 6.7 mA
DDR3L 34 Ohm Output Driver Sensitivity
If either the temperature or the voltage changes after ZQ calibration, then the tolerance
limits listed in Table 38 (page 66) can be expected to widen according to Table 43 and
Table 44.
Table 43: DDR3L 34 Ohm Output Driver Sensitivity Definition
Symbol Min Max Unit
RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |˂T| - dRONdVL × |˂V| 1.1 + dRONdTL × |˂T| + dRONdVL × |˂V| RZQ/7
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |˂T| - dRONdVM × |˂V| 1.1 + dRONdTM × |˂T| + dRONdVM × |˂V| RZQ/7
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |˂T| - dRONdVH × |˂V| 1.4 + dRONdTH × |˂T| + dRONdVH × |˂V| RZQ/7
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |˂T| - dRONdVL × |˂V| 1.4 + dRONdTL × |˂T| + dRONdVL × |˂V| RZQ/7
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |˂T| - dRONdVM × |˂V| 1.1 + dRONdTM × |˂T| + dRONdVM × |˂V| RZQ/7
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |˂T| - dRONdVH × |˂V| 1.1 + dRONdTH × |˂T| + dRONdVH × |˂V| RZQ/7
Note: 1. ˂T = T - T(@CALIBRATION)˂V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
Table 44: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity
Change Min Max Unit
dRONdTM 0 1.5 %/°C
dRONdVM 0 0.13 %/mV
dRONdTL 0 1.5 %/°C
dRONdVL 0 0.13 %/mV
dRONdTH 0 1.5 %/°C
dRONdVH 0 0.13 %/mV
4Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DDR3L Alternative 40 Ohm Driver
Table 45: DDR3L 40 Ohm Driver Impedance Characteristics
MR1
[5, 1] RON Resistor VOUT Min Nom Max Units
0, 0 ˖RON,40PD 0.2 × VDDQ 0.6 1.0 1.15 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.9 1.0 1.45 RZQ/6
RON,40PU 0.2 × VDDQ 0.9 1.0 1.45 RZQ/6
0.5 × VDDQ 0.9 1.0 1.15 RZQ/6
0.8 × VDDQ 0.6 1.0 1.15 RZQ/6
Pull-up/pull-down mismatch (MMPUPD)V
IL(AC) to VIH(AC) –10 N/A 10 %
Notes: 1. Tolerance limits assume RZQ of 240˖±1% and are applicable after proper ZQ calibra-
tion has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS).
Refer to DDR3L 40 Ohm Output Driver Sensitivity (page 69) if either the temperature
or the voltage changes after calibration.
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Meas-
ure both RON(PU) and RON(PD) at 0.5 × VDDQ:
MMPUPD = × 100
RON(PU) - RON(PD)
RON,nom
3. For IT and AT devices, the minimum values are derated by 6% when the device operates
between –40°C and 0°C (TC).
A larger maximum limit will result in slightly lower minimum currents.
DDR3L 40 Ohm Output Driver Sensitivity
If either the temperature or the voltage changes after I/O calibration, then the tolerance
limits listed in Table 45 can be expected to widen according to Table 46 and Table 47
(page 70).
Table 46: DDR3L 40 Ohm Output Driver Sensitivity Definition
Symbol Min Max Unit
RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |˂T| - dRONdVL × |˂V| 1.1 + dRONdTL × |˂T| + dRONdVL × |˂V| RZQ/6
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |˂T| - dRONdVM × |˂V| 1.1 + dRONdTM × |˂T| + dRONdVM × |˂V| RZQ/6
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |˂T| - dRONdVH × |˂V| 1.4 + dRONdTH × |˂T| + dRONdVH × |˂V| RZQ/6
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |˂T| - dRONdVL × |˂V| 1.4 + dRONdTL × |˂T| + dRONdVL × |˂V| RZQ/6
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |˂T| - dRONdVM × |˂V| 1.1 + dRONdTM × |˂T| + dRONdVM × |˂V| RZQ/6
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |˂T| - dRONdVH × |˂V| 1.1 + dRONdTH × |˂T| + dRONdVH × |˂V| RZQ/6
Note: 1. ˂T = T - T(@CALIBRATION)˂V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
4Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 47: 40 Ohm Output Driver Voltage and Temperature Sensitivity
Change Min Max Unit
dRONdTM 0 1.5 %/°C
dRONdVM 0 0.15 %/mV
dRONdTL 0 1.5 %/°C
dRONdVL 0 0.15 %/mV
dRONdTH 0 1.5 %/°C
dRONdVH 0 0.15 %/mV
4Gb: x4, x8, x16 DDR3L SDRAM
Output Driver Impedance
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Output Characteristics and Operating Conditions
Table 48: DDR3L Single-Ended Output Driver Characteristics
All voltages are referenced to VSS
Parameter/Condition Symbol Min Max Unit Notes
Output leakage current: DQ are disabled;
0V ื VOUT ื VDDQ; ODT is disabled; ODT is HIGH
IOZ –5 5 μA 1
Output slew rate: Single-ended; For rising and falling edges,
measure between VOL(AC) = VREF - 0.09 × VDDQ and VOH(AC) =
VREF + 0.09 × VDDQ
SRQse 1.75 6 V/ns 1, 2, 3, 4
Single-ended DC high-level output voltage VOH(DC) 0.8 × VDDQ V 1, 2, 5
Single-ended DC mid-point level output voltage VOM(DC) 0.5 × VDDQ V 1, 2, 5
Single-ended DC low-level output voltage VOL(DC) 0.2 × VDDQ V 1, 2, 5
Single-ended AC high-level output voltage VOH(AC) VTT + 0.1 × VDDQ V 1, 2, 3, 6
Single-ended AC low-level output voltage VOL(AC) VTT - 0.1 × VDDQ V 1, 2, 3, 6
Delta RON between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 7
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25˖ resistor 3
Notes: 1. RZQ of 240˖±1% with RZQ/7 enabled (default 34˖ driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VTT = VDDQ/2.
3. See Figure 31 (page 74) for the test load configuration.
4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from
HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are
either all static or all switching in the opposite direction. For all other DQ signal switch-
ing combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns.
5. See Figure 28 (page 65) for IV curve linearity. Do not use AC test load.
6. See Slew Rate Definitions for Single-Ended Output Signals (page 74) for output slew
rate.
7. See Figure 28 (page 65) for additional information.
8. See Figure 29 (page 72) for an example of a single-ended output signal.
4Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 29: DQ Output Signal
VOH(AC)
MIN output
MAX output
VOL(AC)
Table 49: DDR3L Differential Output Driver Characteristics
All voltages are referenced to VSS
Parameter/Condition Symbol Min Max Unit Notes
Output leakage current: DQ are disabled;
0V ื VOUT ื VDDQ; ODT is disabled; ODT is HIGH
IOZ –5 5 μA 1
DDR3L Output slew rate: Differential; For rising and fall-
ing edges, measure between VOL,diff(AC) = –0.18 × VDDQ
and VOH,diff(AC) = 0.18 × VDDQ
SRQdiff 3.5 12 V/ns 1
Differential high-level output voltage VOH,diff(AC) +0.2 × VDDQ V 1, 4
Differential low-level output voltage VOL,diff(AC) –0.2 × VDDQ V 1, 4
Delta Ron between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 5
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25˖ resistor 3
Notes: 1. RZQ of 240˖±1% with RZQ/7 enabled (default 34˖ driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. VREF = VDDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
3. See Figure 31 (page 74) for the test load configuration.
4. See Table 52 (page 76) for the output slew rate.
5. See Table 38 (page 66) for additional information.
6. See Figure 30 (page 73) for an example of a differential output signal.
4Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 50: DDR3L Differential Output Driver Characteristics VOX(AC)
All voltages are referenced to VSS
Parameter/
Condition Symbol DDR3L- 800/1066/1333 DQS/DQS# Differential Slew Rate Unit
3.5V/ns 4V/ns 5V/ns 6V/ns 7V/ns 8V/ns 9V/ns 10V/ns 12V/ns
Output differential
crosspoint voltage
VOX(AC) Max 115 130 135 195 205 205 205 205 205 mV
Min –115 –130 –135 –195 –205 –205 –205 –205 –205 mV
Parameter/
Condition Symbol DDR3L-1600/1866/2133 DQS/DQS# Differential Slew Rate Unit
3.5V/ns 4V/ns 5v/ns 6V/ns 7V/ns 8V/ns 9V/ns 10V/ns 12V/ns
Output differential
crosspoint voltage
VOX(AC) Max 90 105 135 155 180 205 205 205 205 mV
Min –90 –105 –135 –155 –180 –205 –205 –205 –205 mV
Notes: 1. RZQ of 240˖±1% with RZQ/7 enabled (default 34˖ driver) and is applicable after prop-
er ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD;
VSSQ = VSS).
2. See Figure 31 (page 74) for the test load configuration.
3. See Figure 30 (page 73) for an example of a differential output signal.
4. For a differential slew rate between the list values, the VOX(AC) value may be obtained
by linear interpolation.
Figure 30: Differential Output Signal
V
OH
MIN output
MAX output
V
OL
V
OX(AC)max
V
OX(AC)min
X
X
X
X
4Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Reference Output Load
Figure 31 (page 74) represents the effective reference load of 25ȍ used in defining the
relevant device AC timing parameters (except ODT reference timing) as well as the out-
put slew rate measurements. It is not intended to be a precise representation of a partic-
ular system environment or a depiction of the actual load presented by a production
tester. System designers should use IBIS or other simulation tools to correlate the tim-
ing reference load to a system environment.
Figure 31: Reference Output Load for AC Timing and Output Slew Rate
Timing reference point
DQ
DQS
DQS#
DUT
VREF
V
TT
= V
DDQ
/2
V
DDQ
/2
ZQ
RZQ = 240ȍ
V
SS
R
TT
= 25ȍ
Slew Rate Definitions for Single-Ended Output Signals
The single-ended output driver is summarized in Table 48 (page 71). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between VOL(AC) and VOH(AC) for single-ended signals.
Table 51: Single-Ended Output Slew Rate Definition
Single-Ended Output Slew
Rates (Linear Signals) Measured
CalculationOutput Edge From To
DQ Rising VOL(AC) VOH(AC) VOH(AC) - VOL(AC)
ǻTRse
Falling VOH(AC) VOL(AC) VOH(AC) - VOL(AC)
ǻTFse
4Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 32: Nominal Slew Rate Definition for Single-Ended Output Signals
VOH(AC)
VOL(AC)
VTT
ǻTFse
ǻTRse
4Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Slew Rate Definitions for Differential Output Signals
The differential output driver is summarized in Table 49 (page 72). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between VOL(AC) and VOH(AC) for differential signals.
Table 52: Differential Output Slew Rate Definition
Differential Output Slew
Rates (Linear Signals) Measured
CalculationOutput Edge From To
DQS, DQS# Rising VOL,diff(AC) VOH,diff(AC)
VOH,diff(AC) - VOL,diff(AC)
ǻTRdiff
Falling VOH,diff(AC) VOL,diff(AC)
VOH,diff(AC) - VOL,diff(AC)
ǻTFdiff
Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS#
ǻTRdiff
ǻTFdiff
VOH,diff(AC)
VOL,diff(AC)
0
4Gb: x4, x8, x16 DDR3L SDRAM
Output Characteristics and Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Speed Bin Tables
Table 53: DDR3L-1066 Speed Bins
DDR3L-1066 Speed Bin -187E -187
Unit Notes
CL-tRCD-tRP 7-7-7 8-8-8
Parameter Symbol Min Max Min Max
Internal READ command to first data tAA 13.125 – 15 – ns
ACTIVATE to internal READ or WRITE delay
time
tRCD 13.125 – 15 – ns
PRECHARGE command period tRP 13.125 – 15 – ns
ACTIVATE-to-ACTIVATE or REFRESH command
period
tRC 50.625 – 52.5 – ns
ACTIVATE-to-PRECHARGE command period tRAS 37.5 9 x tREFI 37.5 9 x tREFI ns 1
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 3.0 3.3 ns 2
CWL = 6 tCK (AVG) Reserved Reserved ns 3
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 2.5 3.3 ns 2
CWL = 6 tCK (AVG) Reserved Reserved ns 3
CL = 7 CWL = 5 tCK (AVG) Reserved Reserved ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 Reserved ns 2, 3
CL = 8 CWL = 5 tCK (AVG) Reserved Reserved ns 3
CWL = 6 tCK (AVG) 1.875 <2.5 1.875 <2.5 ns 2
Supported CL settings 5, 6, 7, 8 5, 6, 8 CK
Supported CWL settings 5, 6 5, 6 CK
Notes: 1. tREFI depends on TOPER.
2. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
3. Reserved settings are not allowed.
4Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 54: DDR3L-1333 Speed Bins
DDR3L-1333 Speed Bin -15E1-152
Unit Notes
CL-tRCD-tRP 9-9-9 10-10-10
Parameter Symbol Min Max Min Max
Internal READ command to first data tAA 13.5 – 15 – ns
ACTIVATE to internal READ or WRITE delay
time
tRCD 13.5 – 15 – ns
PRECHARGE command period tRP 13.5 – 15 – ns
ACTIVATE-to-ACTIVATE or REFRESH command
period
tRC 49.5 – 51 – ns
ACTIVATE-to-PRECHARGE command period tRAS 36 9 x tREFI 36 9 x tREFI ns 3
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 3.0 3.3 ns 4
CWL = 6, 7 tCK (AVG) Reserved Reserved ns 5
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 2.5 3.3 ns 4
CWL = 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) Reserved Reserved ns 5
CL = 7 CWL = 5 tCK (AVG) Reserved Reserved ns 5
CWL = 6 tCK (AVG) 1.875 <2.5 Reserved ns 4, 5
CWL = 7 tCK (AVG) Reserved Reserved ns 5
CL = 8 CWL = 5 tCK (AVG) Reserved Reserved ns 5
CWL = 6 tCK (AVG) 1.875 <2.5 1.875 <2.5 ns 4
CWL = 7 tCK (AVG) Reserved Reserved ns 5
CL = 9 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) 1.5 <1.875 Reserved ns 4, 5
CL = 10 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5
CWL = 7 tCK (AVG) 1.5 <1.875 1.5 <1.875 ns 4
Supported CL settings 5, 6, 7, 8, 9, 10 5, 6, 8, 10 CK
Supported CWL settings 5, 6, 7 5, 6, 7 CK
Notes: 1. The -15E speed grade is backward compatible with 1066, CL = 7 (-187E).
2. The -15 speed grade is backward compatible with 1066, CL = 8 (-187).
3. tREFI depends on TOPER.
4. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
5. Reserved settings are not allowed.
4Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 78 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 55: DDR3L-1600 Speed Bins
DDR3L-1600 Speed Bin -1251
Unit Notes
CL-tRCD-tRP 11-11-11
Parameter Symbol Min Max
Internal READ command to first data tAA 13.75 – ns
ACTIVATE to internal READ or WRITE delay time tRCD 13.75 – ns
PRECHARGE command period tRP 13.75 – ns
ACTIVATE-to-ACTIVATE or REFRESH command period tRC 48.75 – ns
ACTIVATE-to-PRECHARGE command period tRAS 35 9 x tREFI ns 2
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6 tCK (AVG) Reserved ns 4
CWL = 7, 8 tCK (AVG) Reserved ns 4
CL = 7 CWL = 5 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) Reserved ns 4
CL = 8 CWL = 5 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) Reserved ns 4
CL = 9 CWL = 5, 6 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 10 CWL = 5, 6 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 11 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11 CK
Supported CWL settings 5, 6, 7, 8 CK
Notes: 1. The -125 speed grade is backward compatible with 1333, CL = 9 (-15E) and 1066, CL = 7
(-187E).
2. tREFI depends on TOPER.
3. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
4. Reserved settings are not allowed.
4Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 79 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 56: DDR3L-1866 Speed Bins
DDR3L-1866 Speed Bin -1071
Unit Notes
CL-tRCD-tRP 13-13-13
Parameter Symbol Min Max
Internal READ command to first data tAA 13.91 20
ACTIVATE to internal READ or WRITE delay time tRCD 13.91 – ns
PRECHARGE command period tRP 13.91 – ns
ACTIVATE-to-ACTIVATE or REFRESH command period tRC 47.91 – ns
ACTIVATE-to-PRECHARGE command period tRAS 34 9 x tREFI ns 2
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 7 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CL = 8 CWL = 5, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CL = 9 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CL = 10 CWL = 5, 6, 9 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 11 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
CWL = 9 tCK (AVG) Reserved ns 4
CL = 12 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4
CWL = 9 tCK (AVG) Reserved ns 4
CL = 13 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4
CWL = 9 tCK (AVG) 1.07 <1.25 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11, 13 CK
Supported CWL settings 5, 6, 7, 8, 9 CK
Notes: 1. The -107 speed grade is backward compatible with 1600, CL = 11 (-125) , 1333, CL = 9
(-15E) and 1066, CL = 7 (-187E).
2. tREFI depends on TOPER.
3. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
4. Reserved settings are not allowed.
4Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 80 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 57: DDR3L-2133 Speed Bins
DDR3L-2133 Speed Bin -0931
Unit Notes
CL-tRCD-tRP 14-14-14
Parameter Symbol Min Max
Internal READ command to first data tAA 13.09 20
ACTIVATE to internal READ or WRITE delay time tRCD 13.09 – ns
PRECHARGE command period tRP 13.09 – ns
ACTIVATE-to-ACTIVATE or REFRESH command period tRC 46.09 – ns
ACTIVATE-to-PRECHARGE command period tRAS 33 9 x tREFI ns 2
CL = 5 CWL = 5 tCK (AVG) 3.0 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 6 CWL = 5 tCK (AVG) 2.5 3.3 ns 3
CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4
CL = 7 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CL = 8 CWL = 5, 8, 9 tCK (AVG) Reserved ns 4
CWL = 6 tCK (AVG) 1.875 <2.5 ns 3
CWL = 7 tCK (AVG) Reserved ns 4
CL = 9 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CL = 10 CWL = 5, 6, 9 tCK (AVG) Reserved ns 4
CWL = 7 tCK (AVG) 1.5 <1.875 ns 3
CWL = 8 tCK (AVG) Reserved ns 4
CL = 11 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4
CWL = 8 tCK (AVG) 1.25 <1.5 ns 3
CWL = 9 tCK (AVG) Reserved ns 4
CL = 12 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4
CWL = 9 tCK (AVG) Reserved ns 4
CL = 13 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4
CWL = 9 tCK (AVG) 1.07 <1.25 ns 3
CL = 14 CWL = 5, 6, 7, 8, 9 tCK (AVG) Reserved Reserved ns 4
CWL = 10 tCK (AVG) 0.938 <1.07 ns 3
Supported CL settings 5, 6, 7, 8, 9, 10, 11, 13, 14 CK
Supported CWL settings 5, 6, 7, 8, 9 CK
Notes: 1. The -093 speed grade is backward compatible with 1866, CL = 13 (-107) , 1600, CL = 11
(-125) , 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E).
2. tREFI depends on TOPER.
3. The CL and CWL settings result in tCK requirements. When making a selection of tCK,
both CL and CWL requirement settings need to be fulfilled.
4. Reserved settings are not allowed.
4Gb: x4, x8, x16 DDR3L SDRAM
Speed Bin Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 81 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Electrical Characteristics and AC Operating Conditions
Table 58: Electrical Characteristics and AC Operating Conditions
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
Clock Timing
Clock period average:
DLL disable mode
TC ื 85°C tCK
(DLL_DIS)
8 7800 8 7800 8 7800 8 7800 ns 9, 42
TC = >85°C to 95°C 8 3900 8 3900 8 3900 8 3900 ns 42
Clock period average: DLL enable mode tCK (AVG) See Speed Bin Tables for tCK range allowed ns 10, 11
High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12
Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12
Clock period jitter DLL locked tJITper –100 100 –90 90 –80 80 –70 70 ps 13
DLL locking tJITper,lck –90 90 –80 80 –70 70 –60 60 ps 13
Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper
MAX
ps
Clock absolute high pulse width tCH (ABS) 0.43 – 0.43 – 0.43 – 0.43 – tCK
(AVG)
14
Clock absolute low pulse width tCL (ABS) 0.43 – 0.43 – 0.43 – 0.43 – tCK
(AVG)
15
Cycle-to-cycle jitter DLL locked tJITcc 200 180 160 140 ps 16
DLL locking tJITcc,lck 180 160 140 120 ps 16
Cumulative error across 2 cycles tERR2per –147 147 –132 132 –118 118 –103 103 ps 17
3 cycles tERR3per –175 175 –157 157 –140 140 –122 122 ps 17
4 cycles tERR4per –194 194 –175 175 –155 155 –136 136 ps 17
5 cycles tERR5per –209 209 –188 188 –168 168 –147 147 ps 17
6 cycles tERR6per –222 222 –200 200 –177 177 –155 155 ps 17
7 cycles tERR7per –232 232 –209 209 –186 186 –163 163 ps 17
8 cycles tERR8per –241 241 –217 217 –193 193 –169 169 ps 17
9 cycles tERR9per –249 249 –224 224 –200 200 –175 175 ps 17
10 cycles tERR10per –257 257 –231 231 –205 205 –180 180 ps 17
11 cycles tERR11per –263 263 –237 237 –210 210 –184 184 ps 17
12 cycles tERR12per –269 269 –242 242 –215 215 –188 188 ps 17
n = 13, 14 . . . 49, 50
cycles
tERRnper tERRnper MIN = (1 + 0.68ln[n]) × tJITper MIN
tERRnper MAX = (1 + 0.68ln[n]) × tJITper MAX
ps 17
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 82 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 58: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
DQ Input Timing
Data setup time to
DQS, DQS#
Base (specification) tDS
(AC160)
90 – 40 – – – – – ps 18, 19,
44
VREF @ 1 V/ns 250 – 200 – – – – – ps 19, 20
Data setup time to
DQS, DQS#
Base (specification) tDS
(AC135)
140 – 90 – 45 – 25 – ps 18, 19,
44
VREF @ 1 V/ns 275 – 250 – 180 – 160 – ps 19, 20
Data hold time from
DQS, DQS#
Base (specification) tDH
(DC90)
160 – 110 – 75 – 55 – ps 18, 19
VREF @ 1 V/ns 250 – 200 – 165 – 145 – ps 19, 20
Minimum data pulse width tDIPW 600 – 490 – 400 – 360 – ps 41
DQ Output Timing
DQS, DQS# to DQ skew, per access tDQSQ – 200 – 150 – 125 – 100 ps
DQ output hold time from DQS, DQS# tQH 0.38 – 0.38 – 0.38 – 0.38 – tCK
(AVG)
21
DQ Low-Z time from CK, CK# tLZDQ –800 400 –600 300 –500 250 –450 225 ps 22, 23
DQ High-Z time from CK, CK# tHZDQ – 400 – 300 – 250 – 225 ps 22, 23
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# rising tDQSS –0.25 0.25 –0.25 0.25 –0.25 0.25 –0.27 0.27 CK 25
DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
DQS, DQS# differential input high pulse
width
tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
DQS, DQS# falling setup to CK, CK# rising tDSS 0.2 – 0.2 – 0.2 – 0.18 – CK 25
DQS, DQS# falling hold from CK, CK# rising tDSH 0.2 – 0.2 – 0.2 – 0.18 – CK 25
DQS, DQS# differential WRITE preamble tWPRE 0.9 – 0.9 – 0.9 – 0.9 – CK
DQS, DQS# differential WRITE postamble tWPST 0.3 – 0.3 – 0.3 – 0.3 – CK
DQ Strobe Output Timing
DQS, DQS# rising to/from rising CK, CK# tDQSCK –400 400 –300 300 –255 255 –225 225 ps 23
DQS, DQS# rising to/from rising CK, CK#
when DLL is disabled
tDQSCK
(DLL_DIS)
110110110110ns26
DQS, DQS# differential output high time tQSH 0.38 – 0.38 – 0.40 – 0.40 – CK 21
DQS, DQS# differential output low time tQSL 0.38 – 0.38 – 0.40 – 0.40 – CK 21
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 58: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
DQS, DQS# Low-Z time (RL - 1) tLZDQS –800 400 –600 300 –500 250 –450 225 ps 22, 23
DQS, DQS# High-Z time (RL + BL/2) tHZDQS – 400 – 300 – 250 – 225 ps 22, 23
DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 0.9 Note 24 0.9 Note 24 CK 23, 24
DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 0.3 Note 27 0.3 Note 27 CK 23, 27
Command and Address Timing
DLL locking time tDLLK 512 – 512 – 512 – 512 – CK 28
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification) tIS
(AC160)
215 – 140 – 80 – 60 – ps 29, 30,
44
VREF @ 1 V/ns 375 – 300 – 240 – 220 – ps 20, 30
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification) tIS
(AC135)
365 – 290 – 205 – 185 – ps 29, 30,
44
VREF @ 1 V/ns 500 – 425 – 340 – 320 – ps 20, 30
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification) tIH
(DC90
285 – 210 – 150 – 130 – ps 29, 30,
44
VREF @ 1 V/ns 375 – 300 – 240 – 220 – ps 20, 30
Minimum CTRL, CMD, ADDR pulse width tIPW 900 – 780 – 620 – 560 – ps 41
ACTIVATE to internal READ or WRITE delay tRCD See Speed Bin Tables for tRCD ns 31
PRECHARGE command period tRP See Speed Bin Tables for tRP ns 31
ACTIVATE-to-PRECHARGE command period tRAS See Speed Bin Tables for tRAS ns 31, 32
ACTIVATE-to-ACTIVATE command period tRC See Speed Bin Tables for tRC ns 31, 43
ACTIVATE-to-ACTIVATE
minimum command
period
x4/x8 (1KB page
size)
tRRD MIN = greater of
4CK or 10ns
MIN = greater of
4CK or 7.5ns
MIN = greater of
4CK or 6ns
MIN = greater of
4CK or 6ns
CK 31
x16 (2KB page size) MIN = greater of 4CK or 10ns MIN = greater of 4CK or 7.5ns CK 31
Four ACTIVATE
windows
x4/x8 (1KB page
size)
tFAW 40 – 37.5 – 30 – 30 – ns 31
x16 (2KB page size) 50 – 50 – 45 – 40 – ns 31
Write recovery time tWR MIN = 15ns; MAX = N/A ns 31, 32,
33,34
Delay from start of internal WRITE
transaction to internal READ command
tWTR MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 34
READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 32
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 58: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = N/A CK
Auto precharge write recovery + precharge
time
tDAL MIN = WR + tRP/tCK (AVG); MAX = N/A CK
MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = N/A CK
MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = N/A CK
MULTIPURPOSE REGISTER READ burst end to
mode register set for multipurpose register
exit
tMPRR MIN = 1CK; MAX = N/A CK
Calibration Timing
ZQCL command: Long
calibration time
POWER-UP and RE-
SET operation
tZQinit 512 – 512 – 512 – 512 – CK
Normal operation tZQoper 256 – 256 – 256 – 256 – CK
ZQCS command: Short calibration time tZQCS 64 – 64 – 64 – 64 – CK
Initialization and Reset Timing
Exit reset from CKE HIGH to a valid command tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK
Begin power supply ramp to power supplies
stable
tVDDPR MIN = N/A; MAX = 200 ms
RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms
RESET# LOW to I/O and RTT High-Z tIOZ MIN = N/A; MAX = 20 ns 35
Refresh Timing
REFRESH-to-ACTIVATE or REFRESH
command period
tRFC – 1Gb MIN = 110; MAX = 70,200 ns
tRFC – 2Gb MIN = 160; MAX = 70,200 ns
tRFC – 4Gb MIN = 260; MAX = 70,200 ns
tRFC – 8Gb MIN = 350; MAX = 70,200 ns
Maximum refresh
period
TC ื 85°C – 64 (1X) ms 36
TC > 85°C and ื
95°C
32 (2X) ms 36
TC > 95°C and ื
105°C
16 (4X) ms 36
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 85 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 58: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
Maximum average
periodic refresh
TC ื 85°C tREFI 7.8 (64ms/8192) μs 36
TC > 85°C and ื
95°C
3.9 (32ms/8192) μs 36
TC > 95°C and ื
105°C
1.95 (16ms/8192) μs 36
Self Refresh Timing
Exit self refresh to commands not requiring a
locked DLL
tXS MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK
Exit self refresh to commands requiring a
locked DLL
tXSDLL MIN = tDLLK (MIN); MAX = N/A CK 28
Minimum CKE low pulse width for self re-
fresh entry to self refresh exit timing
tCKESR MIN = tCKE (MIN) + CK; MAX = N/A CK
Valid clocks after self refresh entry or power-
down entry
tCKSRE MIN = greater of 5CK or 10ns; MAX = N/A CK
Valid clocks before self refresh exit,
power-down exit, or reset exit
tCKSRX MIN = greater of 5CK or 10ns; MAX = N/A CK
Power-Down Timing
CKE MIN pulse width tCKE (MIN) Greater of 3CK
or 7.5ns
Greater of 3CK
or 5.625ns
Greater of 3CK
or 5.625ns
Greater of 3CK
or 5ns
CK
Command pass disable delay tCPDED MIN = 1; MAX = N/A CK
Power-down entry to power-down exit tim-
ing
tPD MIN = tCKE (MIN); MAX = 9 * tREFI CK
Begin power-down period prior to CKE
registered HIGH
tANPD WL - 1CK CK
Power-down entry period: ODT either
synchronous or asynchronous
PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK
Power-down exit period: ODT either
synchronous or asynchronous
PDX tANPD + tXPDLL CK
Power-Down Entry Minimum Timing
ACTIVATE command to power-down entry tACTPDEN MIN = 1 CK
PRECHARGE/PRECHARGE ALL command to
power-down entry
tPRPDEN MIN = 1 CK
REFRESH command to power-down entry tREFPDEN MIN = 1 CK 37
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 58: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK
READ/READ with auto precharge command
to power-down entry
tRDPDEN MIN = RL + 4 + 1 CK
WRITE command to
power-down entry
BL8 (OTF, MRS)
BC4OTF
tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK
BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK
WRITE with auto
precharge command to
power-down entry
BL8 (OTF, MRS)
BC4OTF
tWRAP-
DEN
MIN = WL + 4 + WR + 1 CK
BC4MRS tWRAP-
DEN
MIN = WL + 2 + WR + 1 CK
Power-Down Exit Timing
DLL on, any valid command, or DLL off to
commands not requiring locked DLL
tXP MIN = greater of 3CK or 7.5ns;
MAX = N/A
MIN = greater of 3CK or 6ns;
MAX = N/A
CK
Precharge power-down with DLL off to
commands requiring a locked DLL
tXPDLL MIN = greater of 10CK or 24ns; MAX = N/A CK 28
ODT Timing
RTT synchronous turn-on delay ODTLon CWL + AL - 2CK CK 38
RTT synchronous turn-off delay ODTLoff CWL + AL - 2CK CK 40
RTT turn-on from ODTL on reference tAON –400 400 –300 300 –250 250 –225 225 ps 23, 38
RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39, 40
Asynchronous RTT turn-on delay
(power-down with DLL off)
tAONPD MIN = 2; MAX = 8.5 ns 38
Asynchronous RTT turn-off delay
(power-down with DLL off)
tAOFPD MIN = 2; MAX = 8.5 ns 40
ODT HIGH time with WRITE command and
BL8
ODTH8 MIN = 6; MAX = N/A CK
ODT HIGH time without WRITE command or
with WRITE command and BC4
ODTH4 MIN = 4; MAX = N/A CK
Dynamic ODT Timing
RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK
RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK
RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 58: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39
Write Leveling Timing
First DQS, DQS# rising edge tWLMRD 40 – 40 – 40 – 40 – CK
DQS, DQS# delay tWLDQSEN 25 – 25 – 25 – 25 – CK
Write leveling setup from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS 325 – 245 – 195 – 165 – ps
Write leveling hold from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH 325 – 245 – 195 – 165 – ps
Write leveling output delay tWLO09090907.5ns
Write leveling output error tWLOE 02020202ns
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 88 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Notes: 1. AC timing parameters are valid from specified TC MIN to TC MAX values.
2. All voltages are referenced to VSS.
3. Output timings are only valid for RON34 output buffer selection.
4. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
5. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environ-
ment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC).
6. All timings that use time-based values (ns, μs, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 58 (page 82) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
7. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
8. This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
31 (page 74)).
9. When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
10. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
11. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 20–60 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
12. The clock’s tCH (AVG) and tCL (AVG) are the average half clock period over any 200 con-
secutive clocks and is the smallest clock half period allowed, with the exception of a de-
viation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
13. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
14. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.
15. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one fall-
ing edge to the following rising edge.
16. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
17. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
18. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs and 2 V/ns
slew rate differential DQS, DQS#; when DQ single-ended slew rate is 2V/ns, the DQS dif-
ferential slew rate is 4V/ns.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 89 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transi-
tion edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate
of 1 V/ns, are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output pa-
rameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The fol-
lowing parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are re-
quired to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtract-
ing tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its re-
spective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT com-
mands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3L SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For exam-
ple, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifi-
cations are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the in-
ternal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
• For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
• For BC4 (OTF): Rising clock edge four clock cycles after WL
• For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in exces-
sive current, depending on bus activity.
36. The refresh period is 64ms when TC is less than or equal to 85°C. This equates to an aver-
age refresh rate of 7.8125μs. However, nine REFRESH commands should be asserted at
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
least once every 70.3μs. When TC is greater than 85°C, but less the 95°C, the refresh peri-
od is 32ms. When TC is greater than 95°C, but less the 105°C, the refresh period is 16ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)
is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 24 (page 62). This output load is used for ODT timings
(see Figure 31 (page 74)).Designs that were created prior to JEDEC tightening the maxi-
mum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parame-
ters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are
required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).
40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 24 (page 62). This output load is used for ODT timings (see Figure 31
(page 74)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Ad-
ditionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-
cesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
44. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and
VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/
command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min
with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min
with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Electrical Characteristics and AC Operating Conditions
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
Clock Timing
Clock period average:
DLL disable mode
TC = 0°C to 85°C tCK
(DLL_DIS)
8 7800 8 7800 ns 9, 42
TC = >85°C to 95°C 8 3900 8 3900 ns 42
Clock period average: DLL enable mode tCK (AVG) See Speed Bin Tables for tCK range allowed ns 10, 11
High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 CK 12
Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 CK 12
Clock period jitter DLL locked tJITper –60 60 –50 50 ps 13
DLL locking tJITper,lck –50 50 –40 40 ps 13
Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN +
tJITper MIN; MAX =
tCK (AVG) MAX +
tJITper MAX ps
Clock absolute high pulse width tCH (ABS) 0.43 – 0.43 – tCK
(AVG)
14
Clock absolute low pulse width tCL (ABS) 0.43 – 0.43 – tCK
(AVG)
15
Cycle-to-cycle jitter DLL locked tJITcc 120 120 ps 16
DLL locking tJITcc,lck 100 100 ps 16
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
Cumulative error across 2 cycles tERR2per –88 88 –74 74 ps 17
3 cycles tERR3per –105 105 –87 87 ps 17
4 cycles tERR4per –117 117 –97 97 ps 17
5 cycles tERR5per –126 126 –105 105 ps 17
6 cycles tERR6per –133 133 –111 111 ps 17
7 cycles tERR7per –139 139 –116 116 ps 17
8 cycles tERR8per –145 145 –121 121 ps 17
9 cycles tERR9per –150 150 –125 125 ps 17
10 cycles tERR10per –154 154 –128 128 ps 17
11 cycles tERR11per –158 158 –132 132 ps 17
12 cycles tERR12per –161 161 –134 134 ps 17
n = 13, 14 . . . 49, 50
cycles
tERRnper tERRnper MIN = (1 + 0.68ln[n]) × tJITper MIN
tERRnper MAX = (1 + 0.68ln[n]) × tJITper MAX
ps 17
DQ Input Timing
Data setup time to
DQS, DQS#
Base (specification)
@ 2 V/ns
tDS
(AC130)
70 – 55 – ps 18, 19
VREF @ 2 V/ns 135 – 120.5 – ps 19, 20
Data hold time from
DQS, DQS#
Base (specification)
@ 2 V/ns
tDH
(DC90)
75 – 60 – ps 18, 19
VREF @ 2 V/ns 110 – 105 – ps 19, 20
Minimum data pulse width tDIPW 320 – 280 – ps 41
DQ Output Timing
DQS, DQS# to DQ skew, per access tDQSQ – 85 – 75 ps
DQ output hold time from DQS, DQS# tQH 0.38 – 0.38 – tCK
(AVG)
21
DQ Low-Z time from CK, CK# tLZDQ –390 195 –360 180 ps 22, 23
DQ High-Z time from CK, CK# tHZDQ – 195 – 180 ps 22, 23
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# rising tDQSS –0.27 0.27 –0.27 0.27 CK 25
DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 CK
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
DQS, DQS# differential input high pulse
width
tDQSH 0.45 0.55 0.45 0.55 CK
DQS, DQS# falling setup to CK, CK# rising tDSS 0.18 – 0.18 – CK 25
DQS, DQS# falling hold from CK, CK# rising tDSH 0.18 – 0.18 – CK 25
DQS, DQS# differential WRITE preamble tWPRE 0.9 – 0.9 – CK
DQS, DQS# differential WRITE postamble tWPST 0.3 – 0.3 – CK
DQ Strobe Output Timing
DQS, DQS# rising to/from rising CK, CK# tDQSCK –195 195 –180 180 ps 23
DQS, DQS# rising to/from rising CK, CK#
when DLL is disabled
tDQSCK
(DLL_DIS)
1 10 1 10 ns 26
DQS, DQS# differential output high time tQSH 0.40 – 0.40 – CK 21
DQS, DQS# differential output low time tQSL 0.40 – 0.40 – CK 21
DQS, DQS# Low-Z time (RL - 1) tLZDQS –390 195 –360 180 ps 22, 23
DQS, DQS# High-Z time (RL + BL/2) tHZDQS – 195 – 180 ps 22, 23
DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 CK 23, 24
DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 CK 23, 27
Command and Address Timing
DLL locking time tDLLK 512 – 512 – CK 28
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification) tIS
(AC135)
65 – 60 – ps 29, 30,
44
VREF @ 1 V/ns 200 – 195 – ps 20, 30
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification) tIS
(AC125)
150 – 135 – ps 29, 30,
44
VREF @ 1 V/ns 275 – 260 – ps 20, 30
CTRL, CMD, ADDR hold
from CK,CK#
Base (specification) tIH
(DC90)
110 – 105 – ps 29, 30
VREF @ 1 V/ns 200 – 195 – ps 20, 30
Minimum CTRL, CMD, ADDR pulse width tIPW 535 – 470 – ps 41
ACTIVATE to internal READ or WRITE delay tRCD See Speed Bin Tables for tRCD ns 31
PRECHARGE command period tRP See Speed Bin Tables for tRP ns 31
ACTIVATE-to-PRECHARGE command period tRAS See Speed Bin Tables for tRAS ns 31, 32
ACTIVATE-to-ACTIVATE command period tRC See Speed Bin Tables for tRC ns 31, 43
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
ACTIVATE-to-ACTIVATE
minimum command pe-
riod
1KB page size tRRD MIN = greater of 4CK or 5ns CK 31
2KB page size MIN = greater of 4CK or 6ns CK 31
Four ACTIVATE
windows
1KB page size tFAW 27 – 25 – ns 31
2KB page size 35 – 35 – ns 31
Write recovery time tWR MIN = 15ns; MAX = N/A ns 31, 32,
33
Delay from start of internal WRITE transac-
tion to internal READ command
tWTR MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 34
READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 32
CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = N/A CK
Auto precharge write recovery + precharge
time
tDAL MIN = WR + tRP/tCK (AVG); MAX = N/A CK
MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = N/A CK
MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = N/A CK
MULTIPURPOSE REGISTER READ burst end to
mode register set for multipurpose register
exit
tMPRR MIN = 1CK; MAX = N/A CK
Calibration Timing
ZQCL command: Long
calibration time
POWER-UP and RE-
SET operation
tZQinit MIN = N/A
MAX = MAX(512nCK, 640ns)
CK
Normal operation tZQoper MIN = N/A
MAX = max(256nCK, 320ns)
CK
ZQCS command: Short calibration time MIN = N/A
MAX = max(64nCK, 80ns) tZQCS
CK
Initialization and Reset Timing
Exit reset from CKE HIGH to a valid command tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK
Begin power supply ramp to power supplies
stable
tVDDPR MIN = N/A; MAX = 200 ms
RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms
RESET# LOW to I/O and RTT High-Z tIOZ MIN = N/A; MAX = 20 ns 35
Refresh Timing
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 95 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
REFRESH-to-ACTIVATE or REFRESH
command period
tRFC – 1Gb MIN = 110; MAX = 70,200 ns
tRFC – 2Gb MIN = 160; MAX = 70,200 ns
tRFC – 4Gb MIN = 260; MAX = 70,200 ns
tRFC – 8Gb MIN = 350; MAX = 70,200 ns
Maximum refresh
period
TC ื 85°C – 64 (1X) ms 36
TC > 85°C and ื
95°C
32 (2X) ms 36
TC > 95°C and ื
105°C
16 (4X) ms 36
Maximum average
periodic refresh
TC ื 85°C tREFI 7.8 (64ms/8192) μs 36
TC > 85°C and ื
95°C
3.9 (32ms/8192) μs 36
TC > 95°C and ื
105°C
1.95 (16ms/8192) μs 36
Self Refresh Timing
Exit self refresh to commands not requiring a
locked DLL
tXS MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK
Exit self refresh to commands requiring a
locked DLL
tXSDLL MIN = tDLLK (MIN);
MAX = N/A
CK 28
Minimum CKE low pulse width for self re-
fresh entry to self refresh exit timing
tCKESR MIN = tCKE (MIN) + CK; MAX = N/A CK
Valid clocks after self refresh entry or power-
down entry
tCKSRE MIN = greater of 5CK or 10ns; MAX = N/A CK
Valid clocks before self refresh exit,
power-down exit, or reset exit
tCKSRX MIN = greater of 5CK or 10ns; MAX = N/A CK
Power-Down Timing
CKE MIN pulse width tCKE (MIN) Greater of 3CK or 5ns CK
Command pass disable delay tCPDED MIN = 2;
MAX = N/A
CK
Power-down entry to power-down exit tim-
ing
tPD MIN = tCKE (MIN);
MAX = 9 * tREFI
CK
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 96 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
Begin power-down period prior to CKE
registered HIGH
tANPD WL - 1CK CK
Power-down entry period: ODT either
synchronous or asynchronous
PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK
Power-down exit period: ODT either
synchronous or asynchronous
PDX tANPD + tXPDLL CK
Power-Down Entry Minimum Timing
ACTIVATE command to power-down entry tACTPDEN MIN = 2 CK
PRECHARGE/PRECHARGE ALL command to
power-down entry
tPRPDEN MIN = 2 CK
REFRESH command to power-down entry tREFPDEN MIN = 2 CK 37
MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK
READ/READ with auto precharge command
to power-down entry
tRDPDEN MIN = RL + 4 + 1 CK
WRITE command to
power-down entry
BL8 (OTF, MRS)
BC4OTF
tWRPDEN MIN = WL + 4 +
tWR/tCK (AVG)
CK
BC4MRS tWRPDEN MIN = WL + 2 +
tWR/tCK (AVG)
CK
WRITE with auto pre-
charge command to
power-down entry
BL8 (OTF, MRS)
BC4OTF
tWRAP-
DEN
MIN = WL + 4 + WR + 1 CK
BC4MRS tWRAP-
DEN
MIN = WL + 2 + WR + 1 CK
Power-Down Exit Timing
DLL on, any valid command, or DLL off to
commands not requiring locked DLL
tXP MIN = greater of 3CK or 6ns;
MAX = N/A
CK
Precharge power-down with DLL off to
commands requiring a locked DLL
tXPDLL MIN = greater of 10CK or 24ns; MAX = N/A CK 28
ODT Timing
RTT synchronous turn-on delay ODTL on CWL + AL - 2CK CK 38
RTT synchronous turn-off delay ODTL off CWL + AL - 2CK CK 40
RTT turn-on from ODTL on reference tAON –195 195 –180 180 ps 23, 38
RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 CK 39, 40
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-1866 DDR3L-2133
Unit NotesMin Max Min Max
Asynchronous RTT turn-on delay
(power-down with DLL off)
tAONPD MIN = 2; MAX = 8.5 ns 38
Asynchronous RTT turn-off delay
(power-down with DLL off)
tAOFPD MIN = 2; MAX = 8.5 ns 40
ODT HIGH time with WRITE command and
BL8
ODTH8 MIN = 6; MAX = N/A CK
ODT HIGH time without WRITE command or
with WRITE command and BC4
ODTH4 MIN = 4; MAX = N/A CK
Dynamic ODT Timing
RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK
RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK
RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 CK 39
Write Leveling Timing
First DQS, DQS# rising edge tWLMRD 40 – 40 – CK
DQS, DQS# delay tWLDQSEN 25 – 25 – CK
Write leveling setup from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS 140 – 125 – ps
Write leveling hold from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH 140 – 125 – ps
Write leveling output delay tWLO 0 7.5 0 7 ns
Write leveling output error tWLOE 0 2 0 2 ns
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Notes: 1. AC timing parameters are valid from specified TC MIN to TC MAX values.
2. All voltages are referenced to VSS.
3. Output timings are only valid for RON34 output buffer selection.
4. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation.
The unit CK represents one clock cycle of the input clock, counting the actual clock
edges.
5. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environ-
ment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the
AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum
slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs
(DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns for differential inputs in
the range between VIL(AC) and VIH(AC).
6. All timings that use time-based values (ns, μs, ms) should use tCK (AVG) to determine the
correct number of clocks (Table 59 (page 92) uses CK or tCK [AVG] interchangeably). In
the case of noninteger results, all minimum limits are to be rounded up to the nearest
whole integer, and all maximum limits are to be rounded down to the nearest whole
integer.
7. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is
the rising edge. Clock or CK refers to the CK and CK# differential crossing point when
CK is the rising edge.
8. This output load is used for all AC timing (except ODT reference timing) and slew rates.
The actual test load may be different. The output signal voltage reference point is
VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure
31 (page 74)).
9. When operating in DLL disable mode, Micron does not warrant compliance with normal
mode timings or functionality.
10. The clock’s tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG)
MIN is the smallest clock rate allowed, with the exception of a deviation due to clock
jitter. Input clock jitter is allowed provided it does not exceed values specified and must
be of a random Gaussian distribution in nature.
11. Spread spectrum is not included in the jitter specification values. However, the input
clock can accommodate spread-spectrum at a sweep rate in the range of 20–60 kHz with
an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread
spectrum may not use a clock rate below tCK (AVG) MIN.
12. The clock’s tCH (AVG) and tCL (AVG) are the average half clock period over any 200 con-
secutive clocks and is the smallest clock half period allowed, with the exception of a de-
viation due to clock jitter. Input clock jitter is allowed provided it does not exceed values
specified and must be of a random Gaussian distribution in nature.
13. The period jitter (tJITper) is the maximum deviation in the clock period from the average
or nominal clock. It is allowed in either the positive or negative direction.
14. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one
rising edge to the following falling edge.
15. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one fall-
ing edge to the following rising edge.
16. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle
to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL
locking time.
17. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50,
is the amount of clock time allowed to accumulate consecutively away from the average
clock over n number of clock cycles.
18. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs (DQs are at
2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns slew rate differential DQS, DQS#; when
DQ single-ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transi-
tion edge to its respective data strobe signal (DQS, DQS#) crossing.
20. The setup and hold times are listed converting the base specification values (to which
derating tables apply) to VREF when the slew rate is 1 V/ns (DQs are at 2V/ns for
DDR3-1866 and DDR3-2133). These values, with a slew rate of 1 V/ns (DQs are at 2V/ns
for DDR3-1866 and DDR3-2133), are for reference only.
21. When the device is operated with input clock jitter, this parameter needs to be derated
by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output
deratings are relative to the SDRAM input clock).
22. Single-ended signal parameter.
23. The DRAM output timing is aligned to the nominal or average clock. Most output pa-
rameters must be derated by the actual jitter error when input clock jitter is present,
even when within specification. This results in each parameter becoming larger. The fol-
lowing parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK
(MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are re-
quired to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS
(MAX), tLZDQ (MAX), and tAON (MAX). The parameter tRPRE (MIN) is derated by sub-
tracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN).
24. The maximum preamble is bound by tLZDQS (MAX).
25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its re-
spective clock signal (CK, CK#) crossing. The specification values are not affected by the
amount of clock jitter applied, as these are relative to the clock signal crossing. These
parameters should be met whether clock jitter is present.
26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command.
27. The maximum postamble is bound by tHZDQS (MAX).
28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT com-
mands. In addition, after any change of latency tXPDLL, timing must be met.
29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address
slew rate and 2 V/ns CK, CK# differential slew rate.
30. These parameters are measured from a command/address signal transition edge to its
respective clock (CK, CK#) signal crossing. The specification values are not affected by
the amount of clock jitter applied as the setup and hold times are relative to the clock
signal crossing that latches the command/address. These parameters should be met
whether clock jitter is present.
31. For these parameters, the DDR3L SDRAM device supports tnPARAM (nCK) = RU(tPARAM
[ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For exam-
ple, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifi-
cations are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will
support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are
met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are
valid even if six clocks are less than 15ns due to input clock jitter.
32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the in-
ternal PRECHARGE command until tRAS (MIN) has been satisfied.
33. When operating in DLL disable mode, the greater of 5CK or 15ns is satisfied for tWR.
34. The start of the write recovery time is defined as follows:
• For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL
• For BC4 (OTF): Rising clock edge four clock cycles after WL
• For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL
35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in
High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in exces-
sive current, depending on bus activity.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 100 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
36. The refresh period is 64ms when TC is less than or equal to 85°C. This equates to an aver-
age refresh rate of 7.8125μs. However, nine REFRESH commands should be asserted at
least once every 70.3μs. When TC is greater than 85°C, but less the 95°C, the refresh peri-
od is 32ms. When TC is greater than 95°C, but less the 105°C, the refresh period is 16ms.
37. Although CKE is allowed to be registered LOW after a REFRESH command when
tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN)
is required.
38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to
turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT
reference load is shown in Figure 24 (page 62). This output load is used for ODT timings
(see Figure 31 (page 74)).Designs that were created prior to JEDEC tightening the maxi-
mum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum.
39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when
input clock jitter is present. This results in each parameter becoming larger. The parame-
ters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both
tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are
required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX).
40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT
turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is
shown in Figure 24 (page 62). This output load is used for ODT timings (see Figure 31
(page 74)).
41. Pulse width of a input signal is defined as the width between the first crossing of
VREF(DC) and the consecutive crossing of VREF(DC).
42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should
have at least one NOP command between it and another AUTO REFRESH command. Ad-
ditionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should
be followed by a PRECHARGE ALL command.
43. DRAM devices should be evenly addressed when being accessed. Disproportionate ac-
cesses to a particular row address may result in a reduction of REFRESH characteristics or
product lifetime.
44. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific
speed bin, the user may choose either value for the input AC level. Whichever value is
used, the associated setup time for that AC level must also be used. Additionally, one
VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may
be used for data inputs.
For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and
VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/
command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min
with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min
with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps.
4Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 101 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Command and Address Setup, Hold, and Derating
The total tIS (setup time) and tIH (hold time) required is calculated by adding the data
sheet tIS (base) and tIH (base) values (see Table 60; values come from the Electrical
Characteristics and AC Operating Conditions table) to the ǻtIS and ǻtIH derating values
(see Table 61 (page 103), Table 62 (page 103) or Table 63 (page 103)) respectively. Ex-
ample: tIS (total setup time) = tIS (base) + ǻtIS. For a valid transition, the input signal
has to remain above/below VIH(AC)/VIL(AC) for some time tVAC (see Table 64 (page 104)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached VIH(AC)/VIL(AC) at the time of the rising clock transi-
tion), a valid input signal is still required to complete the transition and to reach
VIH(AC)/VIL(AC) (see Figure 15 (page 52) for input signal requirements). For slew rates that
fall between the values listed in Table 61 (page 103) and Table 63 (page 103), the derat-
ing values may be obtained by linear interpolation.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of VREF(DC) and the first crossing of VIH(AC)min. Setup (tIS) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and
the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew
rate line between the shaded VREF(DC)-to-AC region, use the nominal slew rate for derat-
ing value (see Figure 34 (page 105)). If the actual signal is later than the nominal slew
rate line anywhere between the shaded VREF(DC)-to-AC region, the slew rate of a tangent
line to the actual signal from the AC level to the DC level is used for derating value (see
Figure 36 (page 107)).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of VIL(DC)max and the first crossing of VREF(DC). Hold (tIH) nominal slew rate
for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and
the first crossing of VREF(DC). If the actual signal is always later than the nominal slew
rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derat-
ing value (see Figure 35 (page 106)). If the actual signal is earlier than the nominal slew
rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent
line to the actual signal from the DC level to the VREF(DC) level is used for derating value
(see Figure 37 (page 108)).
Table 60: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced – AC/DC-Based
Symbol 800 1066 1333 1600 1866 2133 Unit Reference
tIS(base, AC160) 215 140 80 60 – – ps VIH(AC)/VIL(AC)
tIS(base, AC135) 365 290 205 185 65 60 ps VIH(AC)/VIL(AC)
tIS(base, AC125) ––––150135psV
IH(AC)/VIL(AC)
tIH(base, DC90) 285 210 150 130 110 105 ps VIH(DC)/VIL(DC)
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 102 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 61: DDR3L-800/1066 Derating Values tIS/tIH – AC160/DC90-Based
˂
˂
tIS,
˂
tIH Derating (ps) – AC/DC-Based
CMD/ADDR
Slew Rate
V/ns
CK, CK# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
2.0 80 45 80 45 80 45 88 53 96 61 104 69 112 79 120 95
1.5 53 30 53 30 53 30 61 38 69 46 77 54 85 64 93 80
1.0 0 0 0 0 008 8 16 16 24 24 32 34 40 50
0.9 –1 –3 –1 –3 –1 –3 7 5 15 13 23 21 31 31 39 47
0.8 –3 –8 –3 –8 –3 –8 5 1 13 9 21 17 29 27 37 43
0.7 –5 –13 –5 –13 –5 –13 3 –5 11 3 19 11 27 21 35 37
0.6 –8 –20 –8 –20 –8 –20 0 –12 8 –4 16 4 24 14 32 30
0.5 –20 –30 –20 –30 –20 –30 –12 –22 –4 –14 4 –6 12 4 20 20
0.4 –40 –45 –40 –45 –40 –45 –32 –37 –24 –29 –16 –21 –8 –11 0 5
Table 62: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH – AC135/DC90-Based
˂
tIS,
˂
tIH Derating (ps) – AC/DC-Based
CMD/ADDR
Slew Rate
V/ns
CK, CK# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
2.0 68 45 68 45 68 45 76 53 84 61 92 69 100 79 108 95
1.5 45 30 45 30 45 30 53 38 61 46 69 54 77 64 85 80
1.0 0 0 0 0 008 8 16 16 24 24 32 34 40 50
0.9 2 –3 2 –3 2–3
10 5 1813262134314247
0.8 3 –8 3 –8 3 –8 11 1 19 9 27 17 35 27 43 43
0.7 6 –13 6 –13 6 –13 14 –5 22 3 30 11 38 21 46 37
0.6 9 –20 9 –20 9 –20 17 –12 25 –4 33 4 41 14 49 30
0.5 5 –30 5 –30 5 –30 13 –22 21 –14 29 –6 37 4 45 20
0.4 –3 –45 –3 –45 –3 –45 6 –37 14 –29 22 –21 30 –11 38 5
Table 63: DDR3L-1866/2133 Derating Values for tIS/tIH – AC125/DC90-Based
˂
tIS,
˂
tIH Derating (ps) – AC/DC-Based
CMD/ADDR
Slew Rate
V/ns
CK, CK# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
2.0 63 45 63 45 63 45 71 53 79 61 87 69 95 79 103 95
1.5 42 30 42 30 42 30 50 38 58 46 66 54 74 64 82 80
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 103 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 63: DDR3L-1866/2133 Derating Values for tIS/tIH – AC125/DC90-Based (Continued)
˂
˂
tIS,
˂
tIH Derating (ps) – AC/DC-Based
CMD/ADDR
Slew Rate
V/ns
CK, CK# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
˂
tIS
˂
tIH
1.0 0 0 0 0 008 8 16 16 24 24 32 34 40 50
0.9 3 –3 3 –3 3–3
11 5 1913272135314347
0.8 6 –8 6 –8 6 –8 14 1 22 9 30 17 38 27 46 43
0.7 10 –13 10 –13 10 –13 18 –5 26 3 34 11 42 21 50 37
0.6 16 –20 16 –20 16 –20 24 –12 32 –4 40 4 48 14 56 30
0.5 15 –30 15 –30 15 –30 23 –22 31 –14 39 –6 47 4 55 20
0.4 13 –45 13 –45 13 –45 21 –37 29 –29 37 –21 45 –11 53 5
Table 64: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD
Transition
Slew Rate (V/ns)
DDR3L-800/1066/1333/1600 DDR3L-1866/2133
tVAC at 160mV (ps) tVAC at 135mV (ps) tVAC at 135mV (ps) tVAC at 125mV (ps)
>2.0 200 213 200 205
2.0 200 213 200 205
1.5 173 190 178 184
1.0 120 145 133 143
0.9 102 130 118 129
0.8 80 111 99 111
0.7 51 87 75 89
0.6 13 55 43 59
0.5 Note 1 10 Note 1 18
<0.5 Note 1 10 Note 1 18
Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 104 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 34: Nominal Slew Rate and tVAC for tIS (Command and Address – Clock)
VSS
Setup slew rate
rising signal
Setup slew rate
falling signal
¨TF ¨TR
==
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Nominal
slew rate
VREF to AC
region
tVAC
tVAC
DQS
DQS#
CK#
CK
tIS tIH tIS tIH
Nominal
slew rate
VREF to AC
region
VREF(DC) - VIL(AC)max
¨TF
VIH(AC)min - VREF(DC)
¨TR
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 105 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 35: Nominal Slew Rate for tIH (Command and Address – Clock)
VSS
Hold slew rate
falling signal
Hold slew rate
rising signal
ǻTR ǻTF
==
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Nominal
slew rate
DC to VREF
region
DQS
DQS#
CK#
CK
tIS tIH tIS tIH
DC to VREF
region
Nominal
slew rate
VREF(DC) - VIL(DC)max
ǻTR
VIH(DC)min - VREF(DC)
ǻTF
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 106 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 36: Tangent Line for tIS (Command and Address – Clock)
VSS
Setup slew rate
rising signal
Setup slew rate
falling signal =
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Tangent
line
VREF to AC
region
Nominal
line
tVAC
tVAC
DQS
DQS#
CK#
CK
tIS tIH tIS tIH
VREF to AC
region
Tangent
line
Nominal
line
Tangent line (VIH(DC)min - VREF(DC))
Tangent line (VREF(DC) - VIL(AC)max)
¨TR
¨TR
¨TF
¨TF
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 107 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 37: Tangent Line for tIH (Command and Address – Clock)
VSS
Hold slew rate
falling signal =
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Tangen t
line
DC to VREF
region
Hold slew rate
rising signal =
DQS
DQS#
CK#
CK
tIS tIH tIS tIH
DC to VREF
region
Tangen t
line
Nominal
line
Nominal
line
Tangent line (VREF(DC) - VIL(DC)max)
Tangent line (VIH(DC)min - VREF(DC))
ǻTR ǻTR
ǻTR
ǻTF
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Command and Address Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 108 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Data Setup, Hold, and Derating
The total tDS (setup time) and tDH (hold time) required is calculated by adding the data
sheet tDS (base) and tDH (base) values (see Table 65 (page 109); values come from the
Electrical Characteristics and AC Operating Conditions table) to the ǻtDS and ǻtDH de-
rating values (see Table 66 (page 110), Table 67 (page 110), or Table 68 (page 111)) re-
spectively. Example: tDS (total setup time) = tDS (base) + ǻtDS. For a valid transition, the
input signal has to remain above/below VIH(AC)/VIL(AC) for some time tVAC (see Table 69
(page 112)).
Although the total setup time for slow slew rates might be negative (for example, a valid
input signal will not have reached VIH(AC)/VIL(AC)) at the time of the rising clock transi-
tion), a valid input signal is still required to complete the transition and to reach
VIH/VIL(AC). For slew rates that fall between the values listed in Table 66 (page 110), Ta-
ble 67 (page 110), or Table 68 (page 111), the derating values may obtained by linear
interpolation.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of VREF(DC) and the first crossing of VIH(AC)min. Setup (tDS) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC)
and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal
slew rate line between the shaded VREF(DC)-to-AC region, use the nominal slew rate for
derating value (see Figure 38 (page 113)). If the actual signal is later than the nominal
slew rate line anywhere between the shaded VREF(DC)-to-AC region, the slew rate of a
tangent line to the actual signal from the AC level to the DC level is used for derating
value (see Figure 40 (page 115)).
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the
last crossing of VIL(DC)max and the first crossing of VREF(DC). Hold (tDH) nominal slew
rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min
and the first crossing of VREF(DC). If the actual signal is always later than the nominal
slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for
derating value (see Figure 39 (page 114)). If the actual signal is earlier than the nominal
slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a
tangent line to the actual signal from the DC-to-VREF(DC) region is used for derating val-
ue (see Figure 41 (page 116)).
Table 65: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) – AC/DC-Based
Symbol 800 1066 1333 1600 1866 2133 Unit Reference
tDS (base) AC160 90 40 – – – – ps VIH(AC)/VIL(AC)
tDS (base) AC135 140 90 45 25 – – ps
tDS (base) AC130 - - - - 70 55 ps
tDH (base) DC90 160 110 75 55 – – ps
tDH (base) DC90 – – – – 75 60 ps
Slew Rate Referenced 1 1 1 1 2 2 V/ns
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 109 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 66: DDR3L Derating Values for tDS/tDH – AC160/DC90-Based
˂
˂
tDS,
˂
tDH Derating (ps) – AC/DC-Based
DQ Slew
Rate V/ns
DQS, DQS# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
2.0 80 45 80 45 80 45
1.5 53 30 53 30 53 30 61 38
1.0 0 0 0 0 008 8 16 16
0.9 –1 –3 –1 –3 7 5 15 13 23 21
0.8 –3 –8 5 1 13 9 21 17 29 27
0.7 –3 –5 11 3 19 11 27 21 35 37
0.6 8 –4 16 4 24 14 32 30
0.5 4 61242020
0.4 –8 –11 0 5
Table 67: DDR3L Derating Values for tDS/tDH – AC135/DC90-Based
˂
tDS,
˂
tDH Derating (ps) – AC/DC-Based
DQ Slew
Rate V/ns
DQS, DQS# Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
2.0 68 45 68 45 68 45
1.5 45 30 45 30 45 30 53 38
1.0 0 0 0 0 008 8 16 16
0.9 2–32–3
10 5 18132621
0.8 3 –8 11 1 19 9 27 17 35 27
0.7 14 –5 22 3 30 11 38 21 46 37
0.6 25 –4 33 4 41 14 49 30
0.5 39 –6 37 4 45 20
0.4 30 –11 38 5
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 110 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 68: DDR3L Derating Values for tDS/tDH – AC130/DC90-Based at 2V/ns
Shaded cells indicate slew rate combinations not supported
˂
˂
tDS,
˂
tDH Derating (ps) – AC/DC-Based
DQ Slew Rate V/ns
DQS, DQS# Differential Slew Rate
8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
˂
tDS
˂
tDH
4.0 33 23 33 23 33 23
3.5 28 19 28 19 28 19 28 19
3.0 22 15 22 15 22 15 22 15 22 15
2.5 139139139139139
2.0 0000000000
1.5 –22 –15 –22 –15 –22 –15 –22 –15 –14 –7
1.0 –65 –45 –65 –45 –65 –45 –57 –37 –49 –29
0.9 –62 –48 –62 –48 –54 –40 –46 –32 –38 –24
0.8 –61 –53 –53 –45 –45 –37 –37 –29 –29 –19
0.7 –49 –50 –41 -42 –33 –34 –25 –24 –17 –8
0.6 –37 -49 –29 –41 –21 –31 –13 –15
0.5 –31 –51 –23 –41 –15 –25
0.4 –28 –56 –20 –40
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 111 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 69: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition
Slew Rate (V/ns)
DDR3L-800/1066 160mV
(ps) min
DDR3L-800/1066/1333
135mV (ps) min
DDR3L-1866/2133
130mV (ps) min
>2.0 165 113 95
2.0 165 113 95
1.5 138 90 73
1.0 85 45 30
0.9 67 30 16
0.8 45 11 Note 1
0.7 16 Note 1 –
0.6 Note 1 Note 1 –
0.5 Note 1 Note 1 –
<0.5 Note 1 Note 1 –
Note: 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input
signal shall become equal to or less than VIL(AC) level.
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 112 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 38: Nominal Slew Rate and tVAC for tDS (DQ – Strobe)
VSS
Setup slew rate
rising signal
Setup slew rate
falling signal
ǻTF ǻTR
==
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Nominal
slew rate
VREF to AC
region
tVAC
tVAC
tDH
tDS
DQS
DQS#
tDH
tDS
CK#
CK
VREF to AC
region
Nominal
slew rate
VIH(AC)min - VREF(DC)
ǻTR
VREF(DC) - VIL(AC)max
ǻTF
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 113 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 39: Nominal Slew Rate for tDH (DQ – Strobe)
VSS
Hold slew rate
falling signal
Hold slew rate
rising signal ==
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Nominal
slew rate
DC to VREF
region
tDH
tDS
DQS
DQS#
tDH
tDS
CK#
CK
DC to VREF
region
Nominal
slew rate
VREF(DC) - VIL(DC)max VIL(DC)min - VREF(DC)
ǻTR ǻTF
ǻTFǻTR
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 114 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 40: Tangent Line for tDS (DQ – Strobe)
VSS
Setup slew rate
rising signal
Setup slew rate
falling signal =
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Tangent
line
VREF to AC
region
Nominal
line
tVAC
tVAC
tDH
tDS
DQS
DQS#
tDH
tDS
CK#
CK
VREF to AC
region
Tangent
line
Nominal
line
Tangent line (VREF(DC) - VIL(AC)max)
Tangent line (VIH(AC)min - VREF(DC))
ǻTR
ǻTR
ǻTF
ǻTF
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 115 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 41: Tangent Line for tDH (DQ – Strobe)
VSS
Hold slew rate
falling signal
ǻTFǻTR
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
Tangent
line
DC to VREF
region
Hold slew rate
rising signal =
DQS
DQS#
CK#
CK
DC to VREF
region
Tangent
line
Nominal
line
Nominal
line
Tangent line (VIH(DC)min - VREF(DC))
ǻTF
Tangent line (VREF(DC) - VIL(DC)max)
ǻTR
tDS tDH tDS tDH
Note: 1. The clock and the strobe are drawn on different time scales.
4Gb: x4, x8, x16 DDR3L SDRAM
Data Setup, Hold, and Derating
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 116 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Commands – Truth Tables
Table 70: Truth Table – Command
Notes 1–5 apply to the entire table
Function Symbol
CKE
CS# RAS# CAS# WE#
BA
[2:0] AnA12 A10
A[11,
9:0] Notes
Prev.
Cycle
Next
Cycle
MODE REGISTER SET MRS H H L L L L BA OP code
REFRESH REF H H L L L H V V V V V
Self refresh entry SRE H L L L L H V V V V V 6
Self refresh exit SRX L H H V V V V V V V V 6, 7
LH HH
Single-bank PRECHARGE PRE H H L L H L BA V V L V
PRECHARGE all banks PREA H H L L H L V V H V
Bank ACTIVATE ACT H H L L H H BA Row address (RA)
WRITE BL8MRS,
BC4MRS
WR H H L H L L BA RFU V L CA 8
BC4OTF WRS4 H H L H L L BA RFU L L CA 8
BL8OTF WRS8 H H L H L L BA RFU H L CA 8
WRITE
with auto
precharge
BL8MRS,
BC4MRS
WRAP H H L H L L BA RFU V H CA 8
BC4OTF WRAPS4 H H L H L L BA RFU L H CA 8
BL8OTF WRAPS8 H H L H L L BA RFU H H CA 8
READ BL8MRS,
BC4MRS
RD H H L H L H BA RFU V L CA 8
BC4OTF RDS4 H H L H L H BA RFU L L CA 8
BL8OTF RDS8 H H L H L H BA RFU H L CA 8
READ
with auto
precharge
BL8MRS,
BC4MRS
RDAP H H L H L H BA RFU V H CA 8
BC4OTF RDAPS4 H H L H L H BA RFU L H CA 8
BL8OTF RDAPS8 H H L H L H BA RFU H H CA 8
NO OPERATION NOP H H L H H H V V V V V 9
Device DESELECTED DES H H H X X X X X X X X 10
Power-down entry PDE H L L H H H V V V V V 6
HV V V
Power-down exit PDX L H L H H H V V V V V 6, 11
HV V V
ZQ CALIBRATION LONG ZQCL H H L H H L X X X H X 12
ZQ CALIBRATION SHORT ZQCS H H L H H L X X X L X
Notes: 1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising
edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configuration-
dependent.
4Gb: x4, x8, x16 DDR3L SDRAM
Commands – Truth Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 117 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
2. RESET# is enabled LOW and used only for asynchronous reset. Thus, RESET# must be
held HIGH during any normal operation.
3. The state of ODT does not affect the states described in this table.
4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of
four mode registers.
5. “V” means “H” or “L” (a defined logic level), and “X” means “Don’t Care.”
6. See Table 71 (page 119) for additional information on CKE transition.
7. Self refresh exit is asynchronous.
8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC
are defined in MR0.
9. The purpose of the NOP command is to prevent the DRAM from registering any unwan-
ted commands. A NOP will not terminate an operation that is executing.
10. The DES and NOP commands perform similarly.
11. The power-down mode does not perform any REFRESH operations.
12. ZQ CALIBRATION LONG is used for either ZQinit (first ZQCL command during initializa-
tion) or ZQoper (ZQCL command after initialization).
4Gb: x4, x8, x16 DDR3L SDRAM
Commands – Truth Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 118 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 71: Truth Table – CKE
Notes 1–2 apply to the entire table; see Table 70 (page 117) for additional command details
Current State3
CKE
Command5
(RAS#, CAS#, WE#, CS#) Action5Notes
Previous Cycle4
(n - 1)
Present Cycle4
(n)
Power-down L L “Don’t Care” Maintain power-down
L H DES or NOP Power-down exit
Self refresh L L “Don’t Care” Maintain self refresh
L H DES or NOP Self refresh exit
Bank(s) active H L DES or NOP Active power-down entry
Reading H L DES or NOP Power-down entry
Writing H L DES or NOP Power-down entry
Precharging H L DES or NOP Power-down entry
Refreshing H L DES or NOP Precharge power-down entry
All banks idle H L DES or NOP Precharge power-down entry 6
H L REFRESH Self refresh
Notes: 1. All states and sequences not shown are illegal or reserved unless explicitly described
elsewhere in this document.
2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges.
CKE must remain at the valid input level the entire time it takes to achieve the required
number of registration clocks. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of tIS + tCKE (MIN) + tIH.
3. Current state = The state of the DRAM immediately prior to clock edge n.
4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the
previous clock edge.
5. COMMAND is the command registered at the clock edge (must be a legal command as
defined in Table 70 (page 117)). Action is a result of COMMAND. ODT does not affect
the states described in this table and is not listed.
6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all tim-
ings from previous operations are satisfied. All self refresh exit and power-down exit pa-
rameters are also satisfied.
4Gb: x4, x8, x16 DDR3L SDRAM
Commands – Truth Tables
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 119 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Commands
DESELECT
The DESELT (DES) command (CS# HIGH) prevents new commands from being execu-
ted by the DRAM. Operations already in progress are not affected.
NO OPERATION
The NO OPERATION (NOP) command (CS# LOW) prevents unwanted commands from
being registered during idle or wait states. Operations already in progress are not affec-
ted.
ZQ CALIBRATION LONG
The ZQ CALIBRATION LONG (ZQCL) command is used to perform the initial calibra-
tion during a power-up initialization and reset sequence (see Figure 50 (page 136)).
This command may be issued at any time by the controller, depending on the system
environment. The ZQCL command triggers the calibration engine inside the DRAM. Af-
ter calibration is achieved, the calibrated values are transferred from the calibration en-
gine to the DRAM I/O, which are reflected as updated RON and ODT values.
The DRAM is allowed a timing window defined by either tZQinit or tZQoper to perform
a full calibration and transfer of values. When ZQCL is issued during the initialization
sequence, the timing parameter tZQinit must be satisfied. When initialization is com-
plete, subsequent ZQCL commands require the timing parameter tZQoper to be satis-
fied.
ZQ CALIBRATION SHORT
The ZQ CALIBRATION SHORT (ZQCS) command is used to perform periodic calibra-
tions to account for small voltage and temperature variations. A shorter timing window
is provided to perform the reduced calibration and transfer of values as defined by tim-
ing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5% RON
and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities
specified in DDR3L 34 Ohm Output Driver Sensitivity (page 68).
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the BA[2:0] inputs selects the bank, and the address
provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses
until a PRECHARGE command is issued to that bank.
A PRECHARGE command must be issued before opening a different row in the same
bank.
READ
The READ command is used to initiate a burst read access to an active row. The address
provided on inputs A[2:0] selects the starting column address, depending on the burst
length and burst type selected (see Burst Order table for additional information). The
value on input A10 determines whether auto precharge is used. If auto precharge is se-
lected, the row being accessed will be precharged at the end of the READ burst. If auto
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 120 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
precharge is not selected, the row will remain open for subsequent accesses. The value
on input A12 (if enabled in the mode register) when the READ command is issued de-
termines whether BC4 (chop) or BL8 is used. After a READ command is issued, the
READ burst may not be interrupted.
Table 72: READ Command Summary
Function Symbol
CKE
CS# RAS# CAS# WE#
BA
[2:0] AnA12 A10
A[11,
9:0]
Prev.
Cycle
Next
Cycle
READ BL8MRS,
BC4MRS
RD H L H L H BA RFU V L CA
BC4OTF RDS4 H L H L H BA RFU L L CA
BL8OTF RDS8 H L H L H BA RFU H L CA
READ with
auto
precharge
BL8MRS,
BC4MRS
RDAP H L H L H BA RFU V H CA
BC4OTF RDAPS4 H L H L H BA RFU L H CA
BL8OTF RDAPS8 H L H L H BA RFU H H CA
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value
on the BA[2:0] inputs selects the bank. The value on input A10 determines whether auto
precharge is used. The value on input A12 (if enabled in the MR) when the WRITE com-
mand is issued determines whether BC4 (chop) or BL8 is used.
Input data appearing on the DQ is written to the memory array subject to the DM input
logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory. If the DM signal is registered HIGH,
the corresponding data inputs will be ignored and a WRITE will not be executed to that
byte/column location.
Table 73: WRITE Command Summary
Function Symbol
CKE
CS# RAS# CAS# WE#
BA
[2:0] AnA12 A10
A[11,
9:0]
Prev.
Cycle
Next
Cycle
WRITE BL8MRS,
BC4MRS
WR H L H L L BA RFU V L CA
BC4OTF WRS4 H L H L L BA RFU L L CA
BL8OTF WRS8 H L H L L BA RFU H L CA
WRITE with
auto
precharge
BL8MRS,
BC4MRS
WRAP H L H L L BA RFU V H CA
BC4OTF WRAPS4 H L H L L BA RFU L H CA
BL8OTF WRAPS8 H L H L L BA RFU H H CA
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 121 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
PRECHARGE
The PRECHARGE command is used to de-activate the open row in a particular bank or
in all banks. The bank(s) are available for a subsequent row access a specified time (tRP)
after the PRECHARGE command is issued, except in the case of concurrent auto pre-
charge. A READ or WRITE command to a different bank is allowed during a concurrent
auto precharge as long as it does not interrupt the data transfer in the current bank and
does not violate any other timing parameters. Input A10 determines whether one or all
banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] se-
lect the bank; otherwise, BA[2:0] are treated as “Don’t Care.”
After a bank is precharged, it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank. A PRECHARGE command is treated as
a NOP if there is no open row in that bank (idle state) or if the previously open row is
already in the process of precharging. However, the precharge period is determined by
the last PRECHARGE command issued to the bank.
REFRESH
The REFRESH command is used during normal operation of the DRAM and is analo-
gous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersis-
tent, so it must be issued each time a refresh is required. The addressing is generated by
the internal refresh controller. This makes the address bits a “Don’t Care” during a RE-
FRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8μs
(maximum when TC 85°C or 3.9μs maximum when TC 95°C). The REFRESH period
begins when the REFRESH command is registered and ends tRFC (MIN) later.
To allow for improved efficiency in scheduling and switching between tasks, some flexi-
bility in the absolute refresh interval is provided. A maximum of eight REFRESH com-
mands can be posted to any given DRAM, meaning that the maximum absolute interval
between any REFRESH command and the next REFRESH command is nine times the
maximum average interval refresh rate. Self refresh may be entered with up to eight RE-
FRESH commands being posted. After exiting self refresh (when entered with posted
REFRESH commands), additional posting of REFRESH commands is allowed to the ex-
tent that the maximum number of cumulative posted REFRESH commands (both pre-
and post-self refresh) does not exceed eight REFRESH commands.
At any given time, a maximum of 16 REFRESH commands can be issued within
2 x tREFI.
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 122 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 42: Refresh Mode
NOP
1
NOP
1
NOP
1
PRE
RA
Bank(s)
3
BA
REF NOP
5
REF
2
NOP
5
ACTNOP
5
One bank
All banks
tCK tCH tCL
RA
tRFC2tRP tRFC (MIN)
T0 T1 T2 T3 T4 Ta0 Tb0
Ta1 Tb1 Tb2
Don’t Care
Indicates break
in time scale
Valid
5
Valid
5
Valid
5
CK
CK#
Command
CKE
Address
A10
BA[2:0]
DQ
4
DM
4
DQS, DQS#
4
Notes: 1. NOP commands are shown for ease of illustration; other valid commands may be possi-
ble at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH
commands, but may be inactive at other times (see Power-Down Mode (page 186)).
2. The second REFRESH is not required, but two back-to-back REFRESH commands are
shown.
3. “Don’t Care” if A10 is HIGH at this point; however, A10 must be HIGH if more than one
bank is active (must precharge all active banks).
4. For operations shown, DM, DQ, and DQS signals are all “Don’t Care”/High-Z.
5. Only NOP and DES commands are allowed after a REFRESH command and until tRFC
(MIN) is satisfied.
SELF REFRESH
The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the
system is powered down. When in self refresh mode, the DRAM retains data without ex-
ternal clocking. Self refresh mode is also a convenient method used to enable/disable
the DLL as well as to change the clock frequency within the allowed synchronous oper-
ating range (see Input Clock Frequency Change (page 128)). All power supply inputs
(including VREFCA and VREFDQ) must be maintained at valid levels upon entry/exit and
during self refresh mode operation. VREFDQ may float or not drive VDDQ/2 while in self
refresh mode under the following conditions:
•V
SS < VREFDQ < VDD is maintained
•V
REFDQ is valid and stable prior to CKE going back HIGH
• The first WRITE operation may not occur earlier than 512 clocks after VREFDQ is valid
• All other self refresh mode exit timing requirements are met
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 123 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DLL Disable Mode
If the DLL is disabled by the mode register (MR1[0] can be switched during initialization
or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal
mode, with a few notable exceptions:
• The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS
WRITE latency (CWL = 6).
• DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK),
but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is
required to line up the read data with the controller time domain when the DLL is dis-
abled.
• In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cy-
cles after the READ command. Additionally, with the DLL disabled, the value of
tDQSCK could be larger than tCK.
The ODT feature (including dynamic ODT) is not supported during DLL disable mode.
The ODT resistors must be disabled by continuously registering the ODT ball LOW by
programming RTT,nom MR1[9, 6, 2] and RTT(WR) MR2[10, 9] to 0 while in the DLL disable
mode.
Specific steps must be followed to switch between the DLL enable and DLL disable
modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX
and tCK [DLL_DIS] MIN, respectively). The only time the clock is allowed to cross this
clock rate gap is during self refresh mode. Thus, the required procedure for switching
from the DLL enable mode to the DLL disable mode is to change frequency during self
refresh:
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), set MR1[0] to 1 to disable the
DLL.
2. Enter self refresh mode after tMOD has been satisfied.
3. After tCKSRE is satisfied, change the frequency to the desired clock rate.
4. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with appropriate values.
5. The DRAM will be ready for its next command in the DLL disable mode after the
greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued
with appropriate timings met.
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 124 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 43: DLL Enable Mode to DLL Disable Mode
Command
T0 T1 Ta0 Ta1 Tb0 Tc0 Td0 Td1 Te0 Te1 Tf0
CK
CK#
ODT
9
Valid
1
Don’t Care
Valid1
SRE
3
NOP
MRS
2
NOP SRX
4
MRS
5
Valid
1
NOP NOP
Indicates break
in time scale
tMOD tCKSRE tMOD
tXS
tCKESR
CKE
tCKSRX876
Notes: 1. Any valid command.
2. Disable DLL by setting MR1[0] to 1.
3. Enter SELF REFRESH.
4. Exit SELF REFRESH.
5. Update the mode registers with the DLL disable parameters setting.
6. Starting with the idle state, RTT is in the High-Z state.
7. Change frequency.
8. Clock must be stable tCKSRX.
9. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
A similar procedure is required for switching from the DLL disable mode back to the
DLL enable mode. This also requires changing the frequency during self refresh mode
(see Figure 44 (page 126)).
1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT
is turned off, and RTT,nom and RTT(WR) are High-Z), enter self refresh mode.
2. After tCKSRE is satisfied, change the frequency to the new clock rate.
3. Self refresh may be exited when the clock is stable with the new frequency for
tCKSRX. After tXS is satisfied, update the mode registers with the appropriate val-
ues. At a minimum, set MR1[0] to 0 to enable the DLL. Wait tMRD, then set MR0[8]
to 1 to enable DLL RESET.
4. After another tMRD delay is satisfied, update the remaining mode registers with
the appropriate values.
5. The DRAM will be ready for its next command in the DLL enable mode after the
greater of tMRD or tMOD has been satisfied. However, before applying any com-
mand or function requiring a locked DLL, a delay of tDLLK after DLL RESET must
be satisfied. A ZQCL command should be issued with the appropriate timings
met.
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 125 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 44: DLL Disable Mode to DLL Enable Mode
CKE
T0 Ta0 Ta1 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Tg0
CK
CK#
ODT
10
SRE
1
NOP
Command NOP SRX
2
MRS
3
MRS
4
MRS
5
Valid
6
Valid
Don’t Care
Indicates break
in time scale
tCKSRE tCKSRX987 tXS tMRD tMRD
tCKESR
ODTLoff + 1 × tCK
Th0
tDLLK
Notes: 1. Enter SELF REFRESH.
2. Exit SELF REFRESH.
3. Wait tXS, then set MR1[0] to 0 to enable DLL.
4. Wait tMRD, then set MR0[8] to 1 to begin DLL RESET.
5. Wait tMRD, update registers (CL, CWL, and write recovery may be necessary).
6. Wait tMOD, any valid command.
7. Starting with the idle state.
8. Change frequency.
9. Clock must be stable at least tCKSRX.
10. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH.
The clock frequency range for the DLL disable mode is specified by the parameter tCK
(DLL_DIS). Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are
supported.
DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK)
but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to
line up read data to the controller time domain.
Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL
cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles
after the READ command.
WRITE operations function similarly between the DLL enable and DLL disable modes;
however, ODT functionality is not allowed with DLL disable mode.
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 126 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 45: DLL Disable tDQSCK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
Don’t CareTransitioning Data
Valid
NOPREAD NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
Address
DI
b + 3
DI
b + 2
DI
b + 1
DI
bDI
b + 7
DI
b + 6
DI
b + 5
DI
b + 4
DQ BL8 DLL on
DQS, DQS# DLL on
DQ BL8 DLL disable
DQS, DQS# DLL off
DQ BL8 DLL disable
DQS, DQS# DLL off
RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DI
b + 3
DI
b + 2
DI
b + 1
DI
bDI
b + 7
DI
b + 6
DI
b + 5
DI
b + 4
DI
b + 3
DI
b + 2
DI
b + 1
DI
bDI
b + 7
DI
b + 6
DI
b + 5
DI
b + 4
tDQSCK (DLL_DIS) MIN
tDQSCK (DLL_DIS) MAX
RL (DLL_DIS) = AL + (CL - 1) = 5
Table 74: READ Electrical Characteristics, DLL Disable Mode
Parameter Symbol Min Max Unit
Access window of DQS from CK, CK# tDQSCK (DLL_DIS) 1 10 ns
4Gb: x4, x8, x16 DDR3L SDRAM
Commands
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 127 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Input Clock Frequency Change
When the DDR3 SDRAM is initialized, the clock must be stable during most normal
states of operation. This means that after the clock frequency has been set to the stable
state, the clock period is not allowed to deviate, except for what is allowed by the clock
jitter and spread spectrum clocking (SSC) specifications.
The input clock frequency can be changed from one stable clock rate to another under
two conditions: self refresh mode and precharge power-down mode. It is illegal to
change the clock frequency outside of those two modes. For the self refresh mode con-
dition, when the DDR3 SDRAM has been successfully placed into self refresh mode and
tCKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the
clock becomes a “Don’t Care,” changing the clock frequency is permissible if the new
clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode
for the sole purpose of changing the clock frequency, the self refresh entry and exit
specifications must still be met.
The precharge power-down mode condition is when the DDR3 SDRAM is in precharge
power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a
logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures
RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode,
and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW
before the clock frequency can change. The DDR3 SDRAM input clock frequency is al-
lowed to change only within the minimum and maximum operating frequency speci-
fied for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input
clock frequency change, CKE must be held at a stable LOW level. When the input clock
frequency is changed, a stable clock must be provided to the DRAM tCKSRX before pre-
charge power-down may be exited. After precharge power-down is exited and tXP has
been satisfied, the DLL must be reset via the MRS. Depending on the new clock fre-
quency, additional MRS commands may need to be issued. During the DLL lock time,
RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is
ready to operate with a new clock frequency.
4Gb: x4, x8, x16 DDR3L SDRAM
Input Clock Frequency Change
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 128 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 46: Change Frequency During Precharge Power-Down
CK
CK#
Command NOPNOPNOP
Address
CKE
DQ
DM
DQS, DQS#
NOP
tCK
Enter precharge
power-down mode
Exit precharge
power-down mode
T0 T1 Ta0 Tc0Tb0T2
Don’t Care
tCKE
tXP
MRS
DLL RESET
Valid
Valid
NOP
tCH
tIH tIS
tCL
Tc1 Td0 Te1Td1
tCKSRE
tCH
b
tCL
b
tCK
b
tCH
b
tCL
b
tCK
b
tCH
b
tCL
b
tCK
b
tCPDED
ODT
NOP
Te0
Previous clock frequency New clock frequency
Frequency
change
Indicates break
in time scale
tIH tIS
tIH
tIS
tDLLK
tAOFPD/tAOF
tCKSRX
High-Z
High-Z
Notes: 1. Applicable for both SLOW-EXIT and FAST-EXIT precharge power-down modes.
2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see On-Die Termina-
tion (ODT) (page 196)for exact requirements).
3. If the RTT,nom feature was enabled in the mode register prior to entering precharge
power-down mode, the ODT signal must be continuously registered LOW, ensuring RTT
is in an off state. If the RTT,nom feature was disabled in the mode register prior to enter-
ing precharge power-down mode, RTT will remain in the off state. The ODT signal can
be registered LOW or HIGH in this case.
4Gb: x4, x8, x16 DDR3L SDRAM
Input Clock Frequency Change
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 129 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Write Leveling
For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topolo-
gy for the commands, addresses, control signals, and clocks. Write leveling is a scheme
for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK rela-
tionship at the DRAM with a simple feedback feature provided by the DRAM. Write lev-
eling is generally used as part of the initialization process, if required. For normal
DRAM operation, this feature must be disabled. This is the only DRAM operation where
the DQS functions as an input (to capture the incoming clock) and the DQ function as
outputs (to report the state of the clock). Note that nonstandard ODT schemes are re-
quired.
The memory controller using the write leveling procedure must have adjustable delay
settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins.
This is accomplished when the DRAM asynchronously feeds back the CK status via the
DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the
DQS strobe until a CK transition from 0 to 1 is detected. The DQS delay established by
this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use
fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this
procedure is shown in Figure 47.
Figure 47: Write Leveling Concept
CK
CK#
Source
Differential DQS
Differential DQS
Differential DQS
DQ
DQ
CK
CK#
Destination
Destination
Push DQS to capture
0–1 transition
T0 T1 T2 T3 T4 T5 T6 T7
T0 T1 T2 T3 T4 T5 T6Tn
CK
CK#
T0 T1 T2 T3 T4 T5 T6Tn
Don’t Care
11
00
When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ
outputs the sampled CK’s status. The prime DQ for a x4 or x8 configuration is DQ0 with
4Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 130 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the
lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS
and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a
x16 enable each byte lane to be leveled independently.
The write leveling mode register interacts with other mode registers to correctly config-
ure the write leveling functionality. Besides using MR1[7] to disable/enable write level-
ing, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst
length, and so forth need to be selected as well. This interaction is shown in Table 75. It
should also be noted that when the outputs are enabled during write leveling mode, the
DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write
leveling mode, only the DQS strobe terminations are activated and deactivated via the
ODT ball. The DQ remain disabled and are not affected by the ODT ball.
Table 75: Write Leveling Matrix
Note 1 applies to the entire table
MR1[7] MR1[12] MR1[2, 6, 9]
DRAM
ODT Ball
DRAM
RTT,nom
DRAM State Case Notes
Write
Leveling
Output
Buffers
RTT,nom
Value DQS DQ
Disabled See normal operations Write leveling not enabled 0
Enabled
(1)
Disabled
(1)
n/a Low Off Off DQS not receiving: not terminated
Prime DQ High-Z: not terminated
Other DQ High-Z: not terminated
12
˖˖
˖˖, or
120˖
High On DQS not receiving: terminated by RTT
Prime DQ High-Z: not terminated
Other DQ High-Z: not terminated
2
Enabled
(0)
n/a Low Off DQS receiving: not terminated
Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
33
˖˖, or
120˖
High On DQS receiving: terminated by RTT
Prime DQ driving CK state: not terminated
Other DQ driving LOW: not terminated
4
Notes: 1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a
dual-rank module and on the rank not being leveled or on any rank of a module not
being leveled on a multislot system. Case 2 may be used when DRAM are on any rank of
a module not being leveled on a multislot system. Case 3 is generally not used. Case 4 is
generally used when DRAM are on the rank that is being leveled.
2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe,
and all RTT,nom values are allowed. This simulates a normal standby state to DQS.
3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and
only some RTT,nom values are allowed. This simulates a normal write state to DQS.
4Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 131 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Write Leveling Procedure
A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, as-
suming the other programable features (MR0, MR1, MR2, and MR3) are first set and the
DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a
High-Z state to an undefined driving state, so the DQ bus should not be driven. During
write leveling mode, only the NOP or DES commands are allowed. The memory con-
troller should attempt to level only one rank at a time; thus, the outputs of other ranks
should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller
may assert ODT after a tMOD delay, as the DRAM will be ready to process the ODT tran-
sition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon
delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay require-
ment.
The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has
been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle
is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a
HIGH state to a LOW state, then both transition back to their original states). At a mini-
mum, ODTLon and tAON must be satisfied at least one clock prior to DQS toggling.
After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory
controller may provide either a single DQS toggle or multiple DQS toggles to sample CK
for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and tDQSH
(MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable
during write leveling mode. The DQS must be able to distinguish the CK’s rising edge
within tWLS and tWLH. The prime DQ will output the CK’s status asynchronously from
the associated DQS rising edge CK capture within tWLO. The remaining DQ that always
drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is sat-
isfied (the prime DQ going LOW). As previously noted, DQS is an input and not an out-
put during this process. Figure 48 (page 133) depicts the basic timing parameters for
the overall write leveling procedure.
The memory controller will most likely sample each applicable prime DQ state and de-
termine whether to increment or decrement its DQS delay setting. After the memory
controller performs enough DQS toggles to detect the CK’s 0-to-1 transition, the memo-
ry controller should lock the DQS delay setting for that DRAM. After locking the DQS
setting is locked, leveling for the rank will have been achieved, and the write leveling
mode for the rank should be disabled or reprogrammed (if write leveling of another
rank follows).
4Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 132 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 48: Write Leveling Sequence
CK
CK#
Command
T1 T2
Early remaining DQ
Late remaining DQ
tWLOE
NOP
2
NOP
MRS
1
NOP NOP NOP NOP NOP NOP NOP NOP NOP
tWLS
tWLH
Don’t CareUndefined Driving Mode
Indicates break
in time scale
Prime DQ
5
Differential DQS
4
ODT
tMOD
tDQSL3tDQSL3
tDQSH3
tDQSH3
tWLO
tWLMRD
tWLDQSEN
tWLO
tWLO
tWLO
Notes: 1. MRS: Load MR1 to enter write leveling mode.
2. NOP: NOP or DES.
3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL
(MIN) as defined for regular writes. The maximum pulse width is system-dependent.
4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are
the zero crossings. The solid line represents DQS; the dotted line represents DQS#.
5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ
are driven LOW and remain in this state throughout the leveling procedure.
4Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 133 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Write Leveling Mode Exit Procedure
After the DRAM are leveled, they must exit from write leveling mode before the normal
mode can be used. Figure 49 depicts a general procedure for exiting write leveling
mode. After the last rising DQS (capturing a 1 at T0), the memory controller should stop
driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memo-
ry controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become
undefined when DQS no longer remains LOW, and they remain undefined until tMOD
after the MRS command (at Te1).
The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the
DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at
~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal
mode can be used. After DQS termination is switched off, write level mode should be
disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid com-
mand may be registered by the DRAM. Some MRS commands may be issued after tMRD
(at Td1).
Figure 49: Write Leveling Exit Procedure
NOP
CK
T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 Td0 Td1 Te0 Te1
CK#
Command
ODT
RTT(DQ)
NOPNOP NOP NOP NOP NOP MRS NOP NOP
Address MR1
Valid Valid
Valid Valid
Don’t CareTransitioning
RTT DQS, RTT DQS# RTT,nom
Undefined Driving Mode
tAOF (MAX)
tMRD
Indicates break
in time scale
DQS, DQS#
CK = 1
DQ
tIS
tAOF (MIN)
tMOD
tWLO + tWLOE
ODTLoff
Note: 1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing
CK HIGH just after the T0 state.
4Gb: x4, x8, x16 DDR3L SDRAM
Write Leveling
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 134 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Initialization
The following sequence is required for power-up and initialization, as shown in Figure
50 (page 136):
1. Apply power. RESET# is recommended to be below 0.2 × VDDQ during power ramp
to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z).
All other inputs, including ODT, may be undefined.
During power-up, either of the following conditions may exist and must be met:
• Condition A:
–V
DD and VDDQ are driven from a single-power converter output and are
ramped with a maximum delta voltage between them of ǻV 300mV. Slope re-
versal of any power supply signal is allowed. The voltage levels on all balls oth-
er than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD on
one side, and must be greater than or equal to VSSQ and VSS on the other side.
– Both VDD and VDDQ power supplies ramp to VDD,min and VDDQ,min within
tVDDPR = 200ms.
–V
REFDQ tracks VDD × 0.5, VREFCA tracks VDD × 0.5.
–V
TT is limited to 0.95V when the power ramp is complete and is not applied
directly to the device; however, tVTD should be greater than or equal to 0 to
avoid device latchup.
• Condition B:
–V
DD may be applied before or at the same time as VDDQ.
–V
DDQ may be applied before or at the same time as VTT, VREFDQ, and VREFCA.
– No slope reversals are allowed in the power supply ramp for this condition.
2. Until stable power, maintain RESET# LOW to ensure the outputs remain disabled
(High-Z). After the power is stable, RESET# must be LOW for at least 200μs to be-
gin the initialization process. ODT will remain in the High-Z state while RESET# is
LOW and until CKE is registered HIGH.
3. CKE must be LOW 10ns prior to RESET# transitioning HIGH.
4. After RESET# transitions HIGH, wait 500μs (minus one clock) with CKE LOW.
5. After the CKE LOW time, CKE may be brought HIGH (synchronously) and only
NOP or DES commands may be issued. The clock must be present and valid for at
least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least
tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be
continuously registered HIGH until the full initialization process is complete.
6. After CKE is registered HIGH and after tXPR has been satisfied, MRS commands
may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applica-
ble settings (provide LOW to BA2 and BA0 and HIGH to BA1).
7. Issue an MRS command to MR3 with the applicable settings.
8. Issue an MRS command to MR1 with the applicable settings, including enabling
the DLL and configuring ODT.
9. Issue an MRS command to MR0 with the applicable settings, including a DLL RE-
SET command. tDLLK (512) cycles of clock input are required to lock the DLL.
10. Issue a ZQCL command to calibrate RTT and RON values for the process voltage
temperature (PVT). Prior to normal operation, tZQinit must be satisfied.
11. When tDLLK and tZQinit have been satisfied, the DDR3 SDRAM will be ready for
normal operation.
4Gb: x4, x8, x16 DDR3L SDRAM
Initialization
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 135 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 50: Initialization Sequence
CKE
RTT
BA[2:0]
All voltage
supplies valid
and stable
T = 200μs (MIN)
DM
DQS
Address
A10
CK
CK#
tCL
Command NOP
T0 Ta0
Don’t Care
tCL
tIS
tCK
ODT
DQ
Tb0
tDLLK
MR1 with
DLL enable
MR0 with
DLL reset
tMRD tMOD
MRSMRS
BA0 = H
BA1 = L
BA2 = L
BA0 = L
BA1 = L
BA2 = L
Code Code
Code Code
Valid
Valid
Valid
Valid
Normal
operation
MR2 MR3
tMRD tMRD
MRSMRS
BA0 = L
BA1 = H
BA2 = L
BA0 = H
BA1 = H
BA2 = L
Code Code
Code Code
Tc0 Td0
VTT
VREF
VDDQ
VDD
RESET#
T = 500μs (MIN)
tCKSRX
Stable and
valid clock
Valid
Power-up
ramp
T (MAX) = 200ms
DRAM ready for
external commands
T1
tZQinit
ZQ calibration
A10 = H
ZQCL
tIS
See power-up
conditions
in the
initialization
sequence text,
set up 1
tXPR
Valid
tIOZ = 20ns
Indicates break
in time scale
T (MIN) = 10ns
tVTD
4Gb: x4, x8, x16 DDR3L SDRAM
Initialization
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 136 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Voltage Initialization / Change
If the SDRAM is powered up and initialized for the 1.35V operating voltage range, volt-
age can be increased to the 1.5V operating range provided the following conditions are
met (See Figure 51 (page 138)):
• Just prior to increasing the 1.35V operating voltages, no further commands are issued,
other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state.
• The 1.5V operating voltages are stable prior to issuing new commands, other than
NOPs or COMMAND INHIBITs.
• The DLL is reset and relocked after the 1.5V operating voltages are stable and prior to
any READ command.
• The ZQ calibration is performed. tZQinit must be satisfied after the 1.5V operating
voltages are stable and prior to any READ command.
If the SDRAM is powered up and initialized for the 1.5V operating voltage range, voltage
can be reduced to the 1.35V operation range provided the following conditions are met
(See Figure 51 (page 138)) :
• Just prior to reducing the 1.5V operating voltages, no further commands are issued,
other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state.
• The 1.35V operating voltages are stable prior to issuing new commands, other than
NOPs or COMMAND INHIBITs.
• The DLL is reset and relocked after the 1.35V operating voltages are stable and prior to
any READ command.
• The ZQ calibration is performed. tZQinit must be satisfied after the 1.35V operating
voltages are stable and prior to any READ command.
4Gb: x4, x8, x16 DDR3L SDRAM
Voltage Initialization / Change
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 137 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
VDD Voltage Switching
After the DDR3L DRAM is powered up and initialized, the power supply can be altered
between the DDR3L and DDR3 levels, provided the sequence in Figure 51 is main-
tained.
Figure 51: VDD Voltage Switching
(
)(
)
(
)(
)
CKE
RTT
BA
(
)(
)
(
)(
)
CK, CK#
Command Note 1 Note 1
(
)(
)
(
)(
)
TdTc Tg
Don’t Care
(
)(
)
(
)(
)
(
)(
)
tIS
ODT
(
)(
)
(
)(
)
Th
tMRD tMOD
(
)(
)
(
)(
)
MRSMRS
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
tMRD tMRD
(
)(
)
(
)(
)
(
)(
)
(
)(
)
MRS
MR0MR1
MR3
MRS
MR2
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
Ti Tj Tk
(
)(
)
(
)(
)
RESET#
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
T = 500μs
(
)(
)
(
)(
)
(
)(
)
Te
Ta Tb Tf
(
)(
)
(
)(
)
ZQCL
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
tIS
Static LOW in case RTT,nom is enabled at time Tg, otherwise static HIGH or LOW
(
)(
)
(
)(
)
(
)(
)
(
)(
)
tIS tIS
tXPR
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
Time break
TMIN = 10ns
TMIN = 10ns
TMIN = 10ns
TMIN = 200μs
tCKSRX
VDD, VDDQ (DDR3)
(
)(
)
(
)(
)
tDLLK
(
)(
)
(
)(
)
(
)(
)
(
)(
)
tZQinit
(
)(
)
(
)(
)(
)(
)(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
VDD, VDDQ (DDR3L)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)
Valid
Valid
Valid
Valid
(
)(
)
(
)(
)
(
)(
)
(
)(
)
(
)(
)(
)(
)(
)(
)(
)(
)(
)(
)(
)(
)(
)(
)
Note: 1. From time point Td until Tk, NOP or DES commands must be applied between MRS and
ZQCL commands.
4Gb: x4, x8, x16 DDR3L SDRAM
Voltage Initialization / Change
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 138 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Mode Registers
Mode registers (MR0–MR3) are used to define various modes of programmable opera-
tions of the DDR3 SDRAM. A mode register is programmed via the mode register set
(MRS) command during initialization, and it retains the stored information (except for
MR0[8], which is self-clearing) until it is reprogrammed, RESET# goes LOW, the device
loses power.
Contents of a mode register can be altered by re-executing the MRS command. Even if
the user wants to modify only a subset of the mode register’s variables, all variables
must be programmed when the MRS command is issued. Reprogramming the mode
register will not alter the contents of the memory array, provided it is performed cor-
rectly.
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). After an MRS com-
mand has been issued, two parameters must be satisfied: tMRD and tMOD. The control-
ler must wait tMRD before initiating any subsequent MRS commands.
Figure 52: MRS to MRS Command Timing (tMRD)
Valid Valid
MRS1MRS2
NOP NOP NOP NOP
T0 T1 T2 Ta0 Ta1 Ta2
CK#
CK
Command
Address
CKE3
Don’t Care
Indicates break
in time scale
tMRD
Notes: 1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN)
must be satisfied, and no data bursts can be in progress.
2. tMRD specifies the MRS to MRS command minimum cycle time.
3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see Pow-
er-Down Mode (page 186)).
4. For a CAS latency change, tXPDLL timing must be met before any non-MRS command.
The controller must also wait tMOD before initiating any non-MRS commands (exclud-
ing NOP and DES). The DRAM requires tMOD in order to update the requested features,
with the exception of DLL RESET, which requires additional time. Until tMOD has been
satisfied, the updated features are to be assumed unavailable.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Registers
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 139 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 53: MRS to nonMRS Command Timing (tMOD)
Valid Valid
MRS non
MRS
NOP NOP NOP NOP
T0 T1 T2 Ta0 Ta1 Ta2
CK#
CK
Command
Address
CKE Valid
Old
setting New
setting
Indicates break
in time scale
tMOD
Updating setting
Don’t Care
Notes: 1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP
must be satisfied, and no data bursts can be in progress).
2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be
issued.
3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satis-
fied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until
tMODmin is satisfied at Ta2.
4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which
time power-down may occur (see Power-Down Mode (page 186)).
Mode Register 0 (MR0)
The base register, mode register 0 (MR0), is used to define various DDR3 SDRAM modes
of operation. These definitions include the selection of a burst length, burst type, CAS
latency, operating mode, DLL RESET, write recovery, and precharge power-down mode
(see Figure 54 (page 141)).
Burst Length
Burst length is defined by MR0[1:0]. Read and write accesses to the DDR3 SDRAM are
burst-oriented, with the burst length being programmable to 4 (chop) mode, 8 (fixed)
mode, or selectable using A12 during a READ/WRITE command (on-the-fly). The burst
length determines the maximum number of column locations that can be accessed for
a given READ or WRITE command. When MR0[1:0] is set to 01 during a READ/WRITE
command, if A12 = 0, then BC4 mode is selected. If A12 = 1, then BL8 mode is selected.
Specific timing diagrams, and turnaround between READ/WRITE, are shown in the
READ/WRITE sections of this document.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached. The block is
uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst
length is set to 8, where Ai is the most significant column address bit for a given config-
uration. The remaining (least significant) address bit(s) is (are) used to select the start-
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 140 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
ing location within the block. The programmed burst length applies to both READ and
WRITE bursts.
Figure 54: Mode Register 0 (MR0) Definitions
BL
CAS# latency CLBTPD
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Mode register 0 (MR0)
Address bus
9765438210
A10A12 A11BA0BA1
10111215–13
M3
0
1
READ Burst Type
Sequential (nibble)
Interleaved
CAS Latency
Reserved
5
6
7
8
9
10
11
12
13
14
M2
0
0
0
0
0
0
0
0
1
1
1
M4
0
1
0
1
0
1
0
1
0
1
0
M5
0
0
1
1
0
0
1
1
0
0
1
M6
0
0
0
0
1
1
1
1
0
0
0
17
DLL
Write Recovery
16
5
6
7
8
10
12
14
WR00
M12
0
1
Precharge PD
DLL off
(slow exit)
DLL on
(fast exit)
BA2
18
01
Burst Length
Fixed BL8
4 or 8 (on-the-fly via A12)
Fixed BC4 (chop)
Reserved
M0
0
1
0
1
M1
0
0
1
1
M9
0
1
0
1
0
1
0
1
M10
0
0
1
1
0
0
1
1
M11
0
0
0
0
1
1
1
1
M14
0
1
0
1
M15
0
0
1
1
Mode Register
Mode register 0 (MR0)
Mode register 1 (MR1)
Mode register 2 (MR2)
Mode register 3 (MR3)
A[15:13]
16
0101
M8
0
1
DLL Reset
No
Yes
Note: 1. MR0[18, 15:13, 7] are reserved for future use and must be programmed to 0.
Burst Type
Accesses within a given burst can be programmed to either a sequential or an inter-
leaved order. The burst type is selected via MR0[3] (see Figure 54 (page 141)). The order-
ing of accesses within a burst is determined by the burst length, the burst type, and the
starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst access
modes. Full interleave address ordering is supported for READs, while WRITEs are re-
stricted to nibble (BC4) or word (BL8) boundaries.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 141 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 76: Burst Order
Burst
Length
READ/
WRITE
Starting
Column Address
(A[2, 1, 0])
Burst Type = Sequential
(Decimal)
Burst Type = Interleaved
(Decimal) Notes
4 (chop) READ 0 0 0 0, 1, 2, 3, Z, Z, Z, Z 0, 1, 2, 3, Z, Z, Z, Z 1, 2
0 0 1 1, 2, 3, 0, Z, Z, Z, Z 1, 0, 3, 2, Z, Z, Z, Z 1, 2
0 1 0 2, 3, 0, 1, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 1, 2
0 1 1 3, 0, 1, 2, Z, Z, Z, Z 3, 2, 1, 0, Z, Z, Z, Z 1, 2
1 0 0 4, 5, 6, 7, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 1, 2
1 0 1 5, 6, 7, 4, Z, Z, Z, Z 5, 4, 7, 6, Z, Z, Z, Z 1, 2
1 1 0 6, 7, 4, 5, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 1, 2
1 1 1 7, 4, 5, 6, Z, Z, Z, Z 7, 6, 5, 4, Z, Z, Z, Z 1, 2
WRITE 0 V V 0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X 1, 3, 4
1 V V 4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X 1, 3, 4
8 (fixed) READ 0 0 0 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1
0 0 1 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 1
0 1 0 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 1
0 1 1 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 1
1 0 0 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 1
1 0 1 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 1
1 1 0 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 1
1 1 1 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 1
WRITE V V V 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1, 3
Notes: 1. Internal READ and WRITE operations start at the same point in time for BC4 as they do
for BL8.
2. Z = Data and strobe output drivers are in tri-state.
3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input
pins.
4. X = “Don’t Care.”
DLL RESET
DLL RESET is defined by MR0[8] (see Figure 54 (page 141)). Programming MR0[8] to 1
activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value
of 0 after the DLL RESET function has been initiated.
Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held
stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to
allow time for the internal clock to be synchronized with the external clock. Failing to
wait for synchronization can result in invalid output timing specifications, such as
tDQSCK timings.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 142 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Write Recovery
WRITE recovery time is defined by MR0[11:9] (see Figure 54 (page 141)). Write recovery
values of 5, 6, 7, 8, 10, or 12 can be used by programming MR0[11:9]. The user is re-
quired to program the correct value of write recovery, which is calculated by dividing
tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer:
WR (cycles) = roundup (tWR (ns)/tCK (ns)).
Precharge Power-Down (Precharge PD)
The precharge power-down (precharge PD) bit applies only when precharge power-
down mode is being used. When MR0[12] is set to 0, the DLL is off during precharge
power-down, providing a lower standby current mode; however, tXPDLL must be satis-
fied when exiting. When MR0[12] is set to 1, the DLL continues to run during precharge
power-down mode to enable a faster exit of precharge power-down mode; however, tXP
must be satisfied when exiting (see Power-Down Mode (page 186)).
CAS Latency (CL)
CAS latency (CL) is defined by MR0[6:4], as shown in Figure 54 (page 141). CAS latency
is the delay, in clock cycles, between the internal READ command and the availability of
the first bit of output data. CL can be set to 5 through 14. DDR3 SDRAM do not support
half-clock latencies.
Examples of CL = 6 and CL = 8 are shown below. If an internal READ command is regis-
tered at clock edge n, and the CAS latency is m clocks, the data will be available nomi-
nally coincident with clock edge n + m. See Speed Bin Tables for the CLs supported at
various operating frequencies.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 143 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 55: READ Latency
READ NOP NOP NOP NOP NOP NOPNOP
CK
CK#
Command
DQ
DQS, DQS#
DQS, DQS#
T0 T1 T2 T3 T4 T5 T6 T7 T8
Don’t Care
CK
CK#
Command
DQ
READ NOP NOP NOP NOP NOP NOPNOP
T0 T1 T2 T3 T4 T5 T6 T7 T8
DI
n + 3
DI
n + 1 DI
n + 2 DI
n + 4
DI
n
DI
n
NOP
NOP
AL = 0, CL = 8
AL = 0, CL = 6
Transitioning Data
Notes: 1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible.
2. Shown with nominal tDQSCK and nominal tDSDQ.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 0 (MR0)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 144 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Mode Register 1 (MR1)
The mode register 1 (MR1) controls additional functions and features not available in
the other mode registers: Q OFF (OUTPUT DISABLE), TDQS (for the x8 configuration
only), DLL ENABLE/DLL DISABLE, RTT,nom value (ODT), WRITE LEVELING, POSTED
CAS ADDITIVE latency, and OUTPUT DRIVE STRENGTH. These functions are control-
led via the bits shown in Figure 56 (page 145). The MR1 register is programmed via the
MRS command and retains the stored information until it is reprogrammed, until RE-
SET# goes LOW, or until the device loses power. Reprogramming the MR1 register will
not alter the contents of the memory array, provided it is performed correctly.
The MR1 register must be loaded when all banks are idle and no bursts are in progress.
The controller must satisfy the specified timing parameters tMRD and tMOD before ini-
tiating a subsequent operation.
Figure 56: Mode Register 1 (MR1) Definition
AL R
TT
Q Off
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Mode register 1 (MR1)
Address bus
9765438210
A10A12 A11BA0BA1
10111213
M0
0
1
DLL Enable
Enable (normal)
Disable
M5
0
0
1
1
Output Drive St rength
RZQ/6 (40ȍ [NOM])
RZQ/7 (34ȍ [NOM])
Reserved
Reserved
14
WL
01
01
1
0ODS DLL
R
TT
TDQS
M12
0
1
Q Off
Enabled
Disabled
BA2
15
01
M7
0
1
Write Levelization
Disable (normal)
Enable
Additive Latency (AL)
Disabled (AL = 0)
AL = CL - 1
AL = CL - 2
Reserved
M3
0
1
0
1
M4
0
0
1
1
R
TT
ODS
M1
0
1
0
1
A13A14A15
161718
01
M11
0
1
TDQS
Disabled
Enabled
0101
R
TT,nom
(ODT) 2
Non- Writes
R
TT,nom
disabled
RZQ/4 (60ȍ [NOM])
RZQ/2 (120ȍ [NOM])
RZQ/6 (40ȍ [NOM])
RZQ/12 (20ȍ [NOM])
RZQ/8 (30ȍ [NOM])
Reserved
Reserved
R
TT,nom
(ODT) 3
Writes
R
TT,nom
disabled
RZQ/4 (60ȍ [NOM])
RZQ/2 (120ȍ [NOM])
RZQ/6 (40ȍ [NOM])
n/a
n/a
Reserved
Reserved
M2
0
1
0
1
0
1
0
1
M6
0
0
1
1
0
0
1
1
M9
0
0
0
0
1
1
1
1
Mode Register
Mode register set 0 (MR0)
Mode register set 1 (MR1)
Mode register set 2 (MR2)
Mode register set 3 (MR3)
M16
0
1
0
1
M17
0
0
1
1
Notes: 1. MR1[18, 15:13, 10, 8] are reserved for future use and must be programmed to 0.
2. During write leveling, if MR1[7] and MR1[12] are 1, then all RTT,nom values are available
for use.
3. During write leveling, if MR1[7] is a 1, but MR1[12] is a 0, then only RTT,nom write values
are available for use.
DLL Enable/DLL Disable
The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE
command, as shown in Figure 56 (page 145). The DLL must be enabled for normal oper-
ation. DLL enable is required during power-up initialization and upon returning to nor-
mal operation after having disabled the DLL for the purpose of debugging or evalua-
tion. Enabling the DLL should always be followed by resetting the DLL using the appro-
priate LOAD MODE command.
If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disa-
bled when entering SELF REFRESH operation and is automatically re-enabled and reset
upon exit of SELF REFRESH operation. If the DLL is disabled prior to entering self re-
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 145 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
fresh mode, the DLL remains disabled even upon exit of SELF REFRESH operation until
it is re-enabled and reset.
The DRAM is not tested to check—nor does Micron warrant compliance with—normal
mode timings or functionality when the DLL is disabled. An attempt has been made to
have the DRAM operate in the normal mode where reasonably possible when the DLL
has been disabled; however, by industry standard, a few known exceptions are defined:
• ODT is not allowed to be used
• The output data is no longer edge-aligned to the clock
• CL and CWL can only be six clocks
When the DLL is disabled, timing and functionality can vary from the normal operation
specifications when the DLL is enabled (see DLL Disable Mode (page 124)). Disabling
the DLL also implies the need to change the clock frequency (see Input Clock Frequen-
cy Change (page 128)).
Output Drive Strength
The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength
mode register setting is defined by MR1[5, 1]. RZQ/7 (34ȍ [NOM]) is the primary output
driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver im-
pedance, an external precision resistor (RZQ) is connected between the ZQ ball and
VSSQ. The value of the resistor must be 240ȍ ±1%.
The output impedance is set during initialization. Additional impedance calibration up-
dates do not affect device operation, and all data sheet timings and current specifica-
tions are met during an update.
To meet the 34ȍ specification, the output drive strength must be set to 34ȍ during initi-
alization. To obtain a calibrated output driver impedance after power-up, the DDR3
SDRAM needs a calibration command that is part of the initialization and reset proce-
dure.
OUTPUT ENABLE/DISABLE
The OUTPUT ENABLE function is defined by MR1[12], as shown in Figure 56 (page
145). When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the
normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs
(DQ and DQS, DQS#) are tri-stated. The output disable feature is intended to be used
during IDD characterization of the READ current and during tDQSS margining (write
leveling) only.
TDQS Enable
Termination data strobe (TDQS) is a feature of the x8 DDR3 SDRAM configuration that
provides termination resistance (RTT) and may be useful in some system configurations.
TDQS is not supported in x4 or x16 configurations. When enabled via the mode register
(MR1[11]), the RTT that is applied to DQS and DQS# is also applied to TDQS and TDQS#.
In contrast to the RDQS function of DDR2 SDRAM, DDR3’s TDQS provides the termina-
tion resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided
by TDQS; thus, RON does not apply to TDQS and TDQS#. The TDQS and DM functions
share the same ball. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is pro-
vided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 146 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
SDRAM configuration only and must be disabled via the mode register for the x4 and
x16 configurations.
On-Die Termination
ODT resistance RTT,nom is defined by MR1[9, 6, 2] (see Figure 56 (page 145)). The RTT
termination value applies to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls. DDR3
supports multiple RTT termination values based on RZQ/n where n can be 2, 4, 6, 8, or
12 and RZQ is 240ȍ.
Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain
off during a READ burst. RTT,nom termination is allowed any time after the DRAM is ini-
tialized, calibrated, and not performing read access, or when it is not in self refresh
mode. Additionally, write accesses with dynamic ODT (RTT(WR)) enabled temporarily re-
places RTT,nom with RTT(WR).
The actual effective termination, RTT(EFF), may be different from the RTT targeted due to
nonlinearity of the termination. For RTT(EFF) values and calculations (see On-Die Termi-
nation (ODT) (page 196)).
The ODT feature is designed to improve signal integrity of the memory channel by ena-
bling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devi-
ces. The ODT input control pin is used to determine when RTT is turned on (ODTL on)
and off (ODTL off), assuming ODT has been enabled via MR1[9, 6, 2].
Timings for ODT are detailed in On-Die Termination (ODT) (page 196).
WRITE LEVELING
The WRITE LEVELING function is enabled by MR1[7], as shown in Figure 56 (page 145).
Write leveling is used (during initialization) to deskew the DQS strobe to clock offset as
a result of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory
modules adopted fly-by topology for the commands, addresses, control signals, and
clocks.
The fly-by topology benefits from a reduced number of stubs and their lengths. Howev-
er, fly-by topology induces flight time skews between the clock and DQS strobe (and
DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining
tDQSS, tDSS, and tDSH specifications without supporting write leveling in systems
which use fly-by topology-based modules. Write leveling timing and detailed operation
information is provided in Write Leveling (page 130).
POSTED CAS ADDITIVE Latency
POSTED CAS ADDITIVE latency (AL) is supported to make the command and data bus
efficient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL,
as shown in Figure 57 (page 148). MR1[4, 3] enable the user to program the DDR3
SDRAM with AL = 0, CL - 1, or CL - 2.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 1 (MR1)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 147 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 57: READ Latency (AL = 5, CL = 6)
CK
CK#
Command
DQ
DQS, DQS#
ACTIVE n
T0 T1
Don’t Care
NOP NOP
T6 T12
NOPREAD n
T13
NOP
DO
n + 3
DO
n + 2
DO
n + 1
RL = AL + CL = 11
T14
NOP
DO
n
tRCD (MIN)
AL = 5 CL = 6
T11
BC4
Indicates break
in time scale Transitioning Data
T2
NOP
Mode Register 2 (MR2)
The mode register 2 (MR2) controls additional functions and features not available in
the other mode registers. These additional functions are CAS WRITE latency (CWL), AU-
TO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT
(RTT(WR)). These functions are controlled via the bits shown in Figure 58. The MR2 is
programmed via the MRS command and will retain the stored information until it is
programmed again or until the device loses power. Reprogramming the MR2 register
will not alter the contents of the memory array, provided it is performed correctly. The
MR2 register must be loaded when all banks are idle and no data bursts are in progress,
and the controller must wait the specified time tMRD and tMOD before initiating a sub-
sequent operation.
Figure 58: Mode Register 2 (MR2) Definition
0
0
0RGH5HJLVWHU
0RGHUHJLVWHUVHW05
0RGHUHJLVWHUVHW05
0RGHUHJLVWHUVHW05
0RGHUHJLVWHUVHW05
$ $ $ $ $ $$ $ $ $
0RGHUHJLVWHU05
$GGUHVVEXV
$$ $%$%$
&:/
%$
$65
$$$
657
5
77:5
0
$XWR6HOI5HIUHVK
2SWLRQDO
'LVDEOHG0DQXDO
(QDEOHG$XWRPDWLF
0
6HOI5HIUHVK7HPSHUDWXUH
1RUPDO&WR&
([WHQGHG &WR&
&$6:ULWH/DWHQF\&:/
&.W&.QV
&.QV!
W&.QV
&.QV!
W&.QV
&.QV!
W&.QV
&.QV!
W&.QV
&.QV!
W
&.QV
5HVHUYHG
5HVHUYHG
0
0
0
0
0
'\QDPLF2'7
5
77:5
5
77:5
GLVDEOHG
5=4:>120@
5=4:>120@
5HVHUYHG
Note: 1. MR2[18, 15:11, 8, and 2:0] are reserved for future use and must all be programmed to 0.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 2 (MR2)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 148 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
CAS Write Latency (CWL)
CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the
internal write to the latching of the first data in. CWL must be correctly set to the corre-
sponding operating clock frequency (see Figure 58 (page 148)). The overall WRITE la-
tency (WL) is equal to CWL + AL (See Figure below).
Figure 59: CAS Write Latency
CK
CK#
Command
DQ
DQS, DQS#
ACTIVE n
T0 T1
Don’t Care
NOP NOP
T6 T12
NOPWRITE n
T13
NOP
DI
n + 3
DI
n + 2
DI
n + 1
T14
NOP
DI
n
tRCD (MIN)
NOP
AL = 5
T11
Indicates break
in time scale
WL = AL + CWL = 11
Transitioning Data
T2
CWL = 6
AUTO SELF REFRESH (ASR)
Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-
times referred to as 1x refresh rate). In the disabled mode, ASR requires the user to en-
sure the DRAM never exceeds a TC of 85°C while in self refresh unless the user enables
the SRT feature listed below when the TC is between 85°C and 105°C.
Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1x to
2x when the case temperature exceeds 85°C. This enables the user to operate the DRAM
beyond the standard 85°C limit up to the optional extended temperature range of 105°C
while in self refresh mode.
The standard self refresh current test specifies test conditions to normal case tempera-
ture (85°C) only, meaning if ASR is enabled, the standard self refresh current specifica-
tions do not apply (see Extended Temperature Usage).
SELF REFRESH TEMPERATURE (SRT)
Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (some-
times referred to as 1x refresh rate). In the disabled mode, SRT requires the user to en-
sure the DRAM never exceeds a TC of 85°C while in self refresh mode unless the user en-
ables ASR.
When SRT is enabled, the DRAM self refresh is changed internally from 1x to 2x, regard-
less of the case temperature. This enables the user to operate the DRAM beyond the
standard 85°C limit up to the optional extended temperature range of 105°C while in
self refresh mode. The standard self refresh current test specifies test conditions to nor-
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 2 (MR2)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 149 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
mal case temperature (85°C) only, meaning if SRT is enabled, the standard self refresh
current specifications do not apply (see Extended Temperature Usage).
SRT vs. ASR
If the normal case temperature limit of 85°C is not exceeded, then neither SRT nor ASR
is required, and both can be disabled throughout operation. However, if the extended
temperature option of up to 105°C is needed, the user is required to provide a 2x refresh
rate during (manual) refreshes when the device is (>85°C but less than 95°C) or 4X re-
freshes (>95°C but less than 105°C) and enable either the SRT or the ASR to ensure self
refresh is performed at the 2x rate.
SRT forces the DRAM to switch the internal self refresh rate from 1x to 2x. Self refresh is
performed at the 2x refresh rate regardless of the case temperature.
ASR automatically switches the DRAM’s internal self refresh rate from 1x to 2x. Howev-
er, while in self refresh mode, ASR enables the refresh rate to automatically adjust be-
tween 1x to 2x over the supported temperature range. One other disadvantage with ASR
is the DRAM cannot always switch from a 1x to a 2x refresh rate at an exact case temper-
ature of 85°C. Although the DRAM will support data integrity when it switches from a 1x
to a 2x refresh rate, it may switch at a lower temperature than 85°C.
Since only one mode is necessary, SRT and ASR cannot be enabled at the same time.
DYNAMIC ODT
The dynamic ODT (RTT(WR)) feature is defined by MR2[10, 9]. Dynamic ODT is enabled
when a value is selected. This new DDR3 SDRAM feature enables the ODT termination
value to change without issuing an MRS command, essentially changing the ODT ter-
mination on-the-fly.
With dynamic ODT (RTT(WR)) enabled, the DRAM switches from normal ODT (RTT_nom)
to dynamic ODT (RTT(WR)) when beginning a WRITE burst and subsequently switches
back to ODT (RTT_nom) at the completion of the WRITE burst. If RTT_nom is disabled, the
RTT_nom value will be High-Z. Special timing parameters must be adhered to when dy-
namic ODT (RTT(WR)) is enabled: ODTLcnw, ODTLcnw4, ODTLcnw8, ODTH4, ODTH8,
and tADC.
Dynamic ODT is only applicable during WRITE cycles. If ODT (RTT_nom) is disabled, dy-
namic ODT (RTT(WR)) is still permitted. RTT_nom and RTT(WR) can be used independent of
one other. Dynamic ODT is not available during write leveling mode, regardless of the
state of ODT (RTT_nom). For details on dynamic ODT operation, refer to Dynamic ODT
(page 198).
Mode Register 3 (MR3)
The mode register 3 (MR3) controls additional functions and features not available in
the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR).
This function is controlled via the bits shown in Figure 60 (page 151). The MR3 is pro-
grammed via the LOAD MODE command and retains the stored information until it is
programmed again or until the device loses power. Reprogramming the MR3 register
will not alter the contents of the memory array, provided it is performed correctly. The
MR3 register must be loaded when all banks are idle and no data bursts are in progress,
and the controller must wait the specified time tMRD and tMOD before initiating a sub-
sequent operation.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 150 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 60: Mode Register 3 (MR3) Definition
A9 A7 A6 A5 A4 A3A8 A2 A1 A0
Mode register 3 (MR3)
Address bus
9765438210
A10A12 A11BA0BA1
101112131415
A13A14A15
01
01
01010101010101
MPR
11
BA2
161718
0101010101
M2
0
1
MPR Enable
Normal DRAM operations2
Dataflow from MPR
MPR_RF
M16
0
1
0
1
M17
0
0
1
1
Mode Register
Mode register set (MR0)
Mode register set 1 (MR1)
Mode register set 2 (MR2)
Mode register set 3 (MR3)
MPR READ Function
Predefined pattern3
Reserved
Reserved
Reserved
M0
0
1
0
1
M1
0
0
1
1
Notes: 1. MR3[18 and 15:3] are reserved for future use and must all be programmed to 0.
2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored.
3. Intended to be used for READ synchronization.
MULTIPURPOSE REGISTER (MPR)
The MULTIPURPOSE REGISTER function is used to output a predefined system timing
calibration bit sequence. Bit 2 is the master bit that enables or disables access to the
MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The basic
concept of the multipurpose register is shown in Figure 61 (page 152).
If MR3[2] is a 0, then the MPR access is disabled, and the DRAM operates in normal
mode. However, if MR3[2] is a 1, then the DRAM no longer outputs normal read data
but outputs MPR data as defined by MR3[0, 1]. If MR3[0, 1] is equal to 00, then a prede-
fined read pattern for system calibration is selected.
To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1. Prior to issu-
ing the MRS command, all banks must be in the idle state (all banks are precharged,
and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands
are redirected to the multipurpose register. The resulting operation when either a READ
or a RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see
Table 78 (page 153)). When the MPR is enabled, only READ or RDAP commands are al-
lowed until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0).
Power-down mode, self refresh, and any other nonREAD/RDAP commands are not al-
lowed during MPR enable mode. The RESET function is supported during MPR enable
mode.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 151 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 61: Multipurpose Register (MPR) Block Diagram
Memory core
MR3[2] = 0 (MPR off)
DQ, DM, DQS, DQS#
Multipurpose register
predefined data for READs
MR3[2] = 1 (MPR on)
Notes: 1. A predefined data pattern can be read out of the MPR with an external READ com-
mand.
2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When
the data flow is defined, the MPR contents can be read out continuously with a regular
READ or RDAP command.
Table 77: MPR Functional Description of MR3 Bits
MR3[2] MR3[1:0]
FunctionMPR MPR READ Function
0 “Don’t Care” Normal operation, no MPR transaction
All subsequent READs come from the DRAM memory array
All subsequent WRITEs go to the DRAM memory array
1 A[1:0]
(see Table 78 (page 153))
Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and
2
MPR Functional Description
The MPR JEDEC definition enables either a prime DQ (DQ0 on a x4 and a x8; on a x16,
DQ0 = lower byte and DQ8 = upper byte) to output the MPR data with the remaining
DQs driven LOW, or for all DQs to output the MPR data . The MPR readout supports
fixed READ burst and READ burst chop (MRS and OTF via A12/BC#) with regular READ
latencies and AC timings applicable, provided the DLL is locked as required.
MPR addressing for a valid MPR read is as follows:
• A[1:0] must be set to 00 as the burst order is fixed per nibble
• A2 selects the burst order:
– BL8, A2 is set to 0, and the burst order is fixed to 0, 1, 2, 3, 4, 5, 6, 7
• For burst chop 4 cases, the burst order is switched on the nibble base along with the
following:
– A2 = 0; burst order = 0, 1, 2, 3
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 152 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
– A2 = 1; burst order = 4, 5, 6, 7
• Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is
assigned to MSB
• A[9:3] are a “Don’t Care”
• A10 is a “Don’t Care”
• A11 is a “Don’t Care”
• A12: Selects burst chop mode on-the-fly, if enabled within MR0
• A13 is a “Don’t Care”
• BA[2:0] are a “Don’t Care”
MPR Register Address Definitions and Bursting Order
The MPR currently supports a single data format. This data format is a predefined read
pattern for system calibration. The predefined pattern is always a repeating 0–1 bit pat-
tern.
Examples of the different types of predefined READ pattern bursts are shown in the fol-
lowing figures.
Table 78: MPR Readouts and Burst Order Bit Mapping
MR3[2] MR3[1:0] Function
Burst
Length
Read
A[2:0] Burst Order and Data Pattern
1 00 READ predefined pattern
for system calibration
BL8 000 Burst order: 0, 1, 2, 3, 4, 5, 6, 7
Predefined pattern: 0, 1, 0, 1, 0, 1, 0, 1
BC4 000 Burst order: 0, 1, 2, 3
Predefined pattern: 0, 1, 0, 1
BC4 100 Burst order: 4, 5, 6, 7
Predefined pattern: 0, 1, 0, 1
1 01 RFU N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
1 10 RFU N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
1 11 RFU N/A N/A N/A
N/A N/A N/A
N/A N/A N/A
Note: 1. Burst order bit 0 is assigned to LSB, and burst order bit 7 is assigned to MSB of the selec-
ted MPR agent.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 153 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout
T0 Ta0 Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10
CK
CK#
MRSPREA READ
1
NOPNOP NOP NOP NOP NOP NOP NOP MRS NOP NOP ValidCommand
tMPRR
Don’t Care
Indicates break
in time scale
DQS, DQS#
Bank address 3 Valid 3
0A[1:0] Valid
0
2
1A2 0
2
0
00A[9:3] Valid 00
01
A10/AP Valid 0
0A11 Valid 0
0A12/BC# Valid
1
0
0A[15:13] Valid 0
DQ
tMOD
tRP tMOD
RL
Notes: 1. READ with BL8 either by MRS or OTF.
2. Memory controller must drive 0 on A[2:0].
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 154 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 63: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout
T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
CK
CK#
tMPRR
Don’t Care
Indicates break
in time scale
RL
3 Valid 3Bank address Valid
A[1:0] Valid
0
2
0
2
0
A2 1
2
0
2
1 0
0A[15:13] Valid Valid 0
A[9:3] Valid Valid 0000
A11 Valid Valid 00
A12/BC# Valid
1
00
A10/AP Valid Valid 001
RL
PREA READ
1
NOP NOP NOP NOP NOP NOP NOP NOP NOP MRS Valid
Command READ
1
MRS
DQ
Valid
DQS, DQS#
tRP tMOD tCCD tMOD
Notes: 1. READ with BL8 either by MRS or OTF.
2. Memory controller must drive 0 on A[2:0].
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 155 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 64: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble
T0 Ta Tb
CK
CK#
DQ
DQS, DQS#
tMOD
tMPRR
Don’t Care
Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
NOP NOP NOP NOP NOP MRS NOP NOP ValidCommand MRSPREA
READ
1
READ
1
NOP NOP
Indicates break
in time scale
Bank address 3 Valid 3Valid
0A[1:0] Valid
0
2
0
2
1A2 1
4
0
3
0
00A[9:3] Valid Valid 00
01A10/AP Valid Valid 0
0A11 Valid Valid 0
0A12/BC# Valid
1
Valid
1
0
0
A[15:13] Valid Valid 0
RL
RL
tRF tMOD tCCD
Notes: 1. READ with BC4 either by MRS or OTF.
2. Memory controller must drive 0 on A[1:0].
3. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
4. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 156 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 65: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble
T0 Ta Tb
01A10/AP Valid Valid 0
CK
CK#
MRSPREA
READ
1
READ
1
NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP ValidCommand
0
0
4
1
3
1A2
tMOD
tMPRR
3 Valid 3Bank address Valid
0
2
0
2
0A[1:0] Valid
00A[15:13] Valid Valid
00A11 Valid Valid
0000A[9:3] Valid Valid
Don’t Care
Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 Td
Indicates break
in time scale
RL
DQ
DQS, DQS#
0A12/BC# Valid
1
Valid
1
0
RL
tRF tMOD tCCD
Notes: 1. READ with BC4 either by MRS or OTF.
2. Memory controller must drive 0 on A[1:0].
3. A2 = 1 selects upper 4 nibble bits 4 . . . 7.
4. A2 = 0 selects lower 4 nibble bits 0 . . . 3.
4Gb: x4, x8, x16 DDR3L SDRAM
Mode Register 3 (MR3)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 157 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
MPR Read Predefined Pattern
The predetermined read calibration pattern is a fixed pattern of 0, 1, 0, 1, 0, 1, 0, 1. The
following is an example of using the read out predetermined read calibration pattern.
The example is to perform multiple reads from the multipurpose register to do system
level read timing calibration based on the predetermined and standardized pattern.
The following protocol outlines the steps used to perform the read calibration:
1. Precharge all banks
2. After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all sub-
sequent reads and loads the predefined pattern into the MPR. As soon as tMRD
and tMOD are satisfied, the MPR is available
3. Data WRITE operations are not allowed until the MPR returns to the normal
DRAM state
4. Issue a read with burst order information (all other address pins are “Don’t Care”):
• A[1:0] = 00 (data burst order is fixed starting at nibble)
• A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7)
• A12 = 1 (use BL8)
5. After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern
(0, 1, 0, 1, 0, 1, 0, 1)
6. The memory controller repeats the calibration reads until read data capture at
memory controller is optimized
7. After the last MPR READ burst and after tMPRR has been satisfied, issue MRS,
MR3[2] = 0, and MR3[1:0] = “Don’t Care” to the normal DRAM state. All subse-
quent read and write accesses will be regular reads and writes from/to the DRAM
array
8. When tMRD and tMOD are satisfied from the last MRS, the regular DRAM com-
mands (such as activate a memory bank for regular read or write access) are per-
mitted
MODE REGISTER SET (MRS) Command
The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which
mode register is programmed:
• BA2 = 0, BA1 = 0, BA0 = 0 for MR0
• BA2 = 0, BA1 = 0, BA0 = 1 for MR1
• BA2 = 0, BA1 = 1, BA0 = 0 for MR2
• BA2 = 0, BA1 = 1, BA0 = 1 for MR3
The MRS command can only be issued (or re-issued) when all banks are idle and in the
precharged state (tRP is satisfied and no data bursts are in progress). The controller
must wait the specified time tMRD before initiating a subsequent operation such as an
ACTIVATE command (see Figure 52 (page 139)). There is also a restriction after issuing
an MRS command with regard to when the updated functions become available. This
parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure
52 (page 139) and Figure 53 (page 140). Violating either of these requirements will result
in unspecified operation.
4Gb: x4, x8, x16 DDR3L SDRAM
MODE REGISTER SET (MRS) Command
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 158 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
ZQ CALIBRATION Operation
The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON)
and ODT values (RTT) over process, voltage, and temperature, provided a dedicated
240ȍ (±1%) external resistor is connected from the DRAM’s ZQ ball to VSSQ.
DDR3 SDRAM require a longer time to calibrate RON and ODT at power-up initialization
and self refresh exit, and a relatively shorter time to perform periodic calibrations.
DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQCL and ZQCS. An example
of ZQ calibration timing is shown below.
All banks must be precharged and tRP must be met before ZQCL or ZQCS commands
can be issued to the DRAM. No other activities (other than issuing another ZQCL or
ZQCS command) can be performed on the DRAM channel by the controller for the du-
ration of tZQinit or tZQoper. The quiet time on the DRAM channel helps accurately cali-
brate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the
ZQ ball’s current consumption path to reduce power.
ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time.
Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired.
In dual-rank systems that share the ZQ resistor between devices, the controller must not
enable overlap of tZQinit, tZQoper, or tZQCS between ranks.
Figure 66: ZQ CALIBRATION Timing (ZQCL and ZQCS)
NOPZQCL NOP NOP Valid Valid ZQCS NOP NOP NOP ValidCommand
Indicates break
in time scale
T0 T1 Ta0 Ta1 Ta2 Ta3 Tb0 Tb1 Tc0 Tc1 Tc2
Address Valid ValidValid
A10 Valid ValidValid
CK
CK#
Don’t Care
DQ High-Z High-Z33 Activities Activ-
ities
Valid ValidODT 2 2 Valid
1
CKE 1 Valid Valid Valid
tZQCS
tZQinit or tZQoper
Notes: 1. CKE must be continuously registered HIGH during the calibration procedure.
2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure.
3. All devices connected to the DQ bus should be High-Z during calibration.
4Gb: x4, x8, x16 DDR3L SDRAM
ZQ CALIBRATION Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 159 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
ACTIVATE Operation
Before any READ or WRITE commands can be issued to a bank within the DRAM, a row
in that bank must be opened (activated). This is accomplished via the ACTIVATE com-
mand, which selects both the bank and the row to be activated.
After a row is opened with an ACTIVATE command, a READ or WRITE command may
be issued to that row, subject to the tRCD specification. However, if the additive latency
is programmed correctly, a READ or WRITE command may be issued prior to tRCD
(MIN). In this operation, the DRAM enables a READ or WRITE command to be issued
after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the require-
ment that (ACTIVATE-to-READ/WRITE) + AL tRCD (MIN) (see Posted CAS Additive
Latency). tRCD (MIN) should be divided by the clock period and rounded up to the next
whole number to determine the earliest clock edge after the ACTIVATE command on
which a READ or WRITE command can be entered. The same procedure is used to con-
vert other specification limits from time units to clock cycles.
When at least one bank is open, any READ-to-READ command delay or WRITE-to-
WRITE command delay is restricted to tCCD (MIN).
A subsequent ACTIVATE command to a different row in the same bank can only be is-
sued after the previous active row has been closed (precharged). The minimum time in-
terval between successive ACTIVATE commands to the same bank is defined by tRC.
A subsequent ACTIVATE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The mini-
mum time interval between successive ACTIVATE commands to different banks is de-
fined by tRRD. No more than four bank ACTIVATE commands may be issued in a given
tFAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) param-
eter applies, regardless of the number of banks already opened or closed.
Figure 67: Example: Meeting tRRD (MIN) and tRCD (MIN)
Command
Don’t Care
T1T0 T2 T3 T4 T5 T8 T9
tRRD
Row Row Col
Bank x Bank y Bank y
NOPACT NOP NOPACT NOP NOP RD/WR
tRCD
BA[2:0]
CK#
Address
CK
T10 T11
NOP NOP
Indicates break
in time scale
4Gb: x4, x8, x16 DDR3L SDRAM
ACTIVATE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 160 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 68: Example: tFAW
Command
Don’t Care
T1T0 T4 T5 T8 T9 T10 T11
tRRD
Row Row
Bank a Bank b
Row
Bank c
Row
Bank d Bank y
Row
Bank y
NOPACT NOPACT ACT NOP NOP
tFAW
BA[2:0]
CK#
Address
CK
T19 T20
NOPACT ACT
Bank e
Indicates break
in time scale
4Gb: x4, x8, x16 DDR3L SDRAM
ACTIVATE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 161 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
READ Operation
READ bursts are initiated with a READ command. The starting column and bank ad-
dresses are provided with the READ command and auto precharge is either enabled or
disabled for that burst access. If auto precharge is enabled, the row being accessed is
automatically precharged at the completion of the burst. If auto precharge is disabled,
the row will be left open after the completion of the burst.
During READ bursts, the valid data-out element from the starting column address is
available READ latency (RL) clocks later. RL is defined as the sum of posted CAS additive
latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programma-
ble in the mode register via the MRS command. Each subsequent data-out element is
valid nominally at the next positive or negative clock edge (that is, at the next crossing
of CK and CK#). Figure 69 shows an example of RL based on a CL setting of 8 and an AL
setting of 0.
Figure 69: READ Latency
CK
CK#
Command READ NOP NOP NOP NOP NOP NOP NOP
Address Bank a,
Col n
CL = 8, AL = 0
DQ
DQS, DQS#
DO
n
T0 T7 T8 T9 T10 T11
Don’t Care
Transitioning Data
T12 T12
Indicates break
in time scale
Notes: 1. DO n = data-out from column n.
2. Subsequent elements of data-out appear in the programmed order following DO n.
DQS, DQS# is driven by the DRAM along with the output data. The initial LOW state on
DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The LOW state
on DQS and the HIGH state on DQS#, coincident with the last data-out element, is
known as the READ postamble (tRPST). Upon completion of a burst, assuming no other
commands have been initiated, the DQ goes High-Z. A detailed explanation of tDQSQ
(valid data-out skew), tQH (data-out window hold), and the valid data window are de-
picted in Figure 80 (page 170). A detailed explanation of tDQSCK (DQS transition skew
to CK) is also depicted in Figure 80 (page 170).
Data from any READ burst may be concatenated with data from a subsequent READ
command to provide a continuous flow of data. The first data element from the new
burst follows the last element of a completed burst. The new READ command should be
issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 70
(page 164). If BC4 is enabled, tCCD must still be met, which will cause a gap in the data
output, as shown in Figure 71 (page 164). Nonconsecutive READ data is reflected in
Figure 72 (page 165). DDR3 SDRAM does not allow interrupting or truncating any
READ burst.
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 162 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Data from any READ burst must be completed before a subsequent WRITE burst is al-
lowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Fig-
ure 73 (page 165) (BC4 is shown in Figure 74 (page 166)). To ensure the READ data is
completed before the WRITE data is on the bus, the minimum READ-to-WRITE timing
is RL + tCCD - WL + 2tCK.
A READ burst may be followed by a PRECHARGE command to the same bank, provided
auto precharge is not activated. The minimum READ-to-PRECHARGE command spac-
ing to the same bank is four clocks and must also satisfy a minimum analog time from
the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL
cycles later than the READ command. Examples for BL8 are shown in Figure 75 (page
166) and BC4 in Figure 76 (page 167). Following the PRECHARGE command, a subse-
quent command to the same bank cannot be issued until tRP is met. The PRECHARGE
command followed by another PRECHARGE command to the same bank is allowed.
However, the precharge period will be determined by the last PRECHARGE command
issued to the bank.
If A10 is HIGH when a READ command is issued, the READ with auto precharge func-
tion is engaged. The DRAM starts an auto precharge operation on the rising edge, which
is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see
Figure 78 (page 167)). If tRAS (MIN) is not satisfied at the edge, the starting point of the
auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is
not satisfied at the edge, the starting point of the auto precharge operation is delayed
until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by tRTP, tRP
starts at the point at which the internal precharge happens (not at the next rising clock
edge after this event). The time from READ with auto precharge to the next ACTIVATE
command to the same bank is AL + (tRTP + tRP)*, where * means rounded up to the next
integer. In any event, internal precharge does not start earlier than four clocks after the
last 8n-bit prefetch.
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 163 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 70: Consecutive READ Bursts (BL8)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
Don’t CareTransitioning Data
T12 T13 T14
tRPST
NOPREAD READNOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command1
DQ
3
DQS, DQS#
Bank,
Col n Bank,
Col b
Address2
RL = 5
tRPRE
tCCD
RL = 5
DO
n + 3
DO
n + 2
DO
n + 1
DO
n DO
n + 7
DO
n + 6
DO
n + 5
DO
n + 4 DO
b + 3
DO
b + 2
DO
b + 1
DO
b DO
b + 7
DO
b + 6
DO
b + 5
DO
b + 4
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BL8, RL = 5 (CL = 5, AL = 0).
Figure 71: Consecutive READ Bursts (BC4)
NOP
CK
CK#
Command
1
DQ
3
DQS, DQS#
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
Address
2
T10 T11
Don’t CareTransitioning Data
T12 T13 T14
READ READNOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Bank,
Col n Bank,
Col b
tRPST
tRPRE tRPST tRPRE
RL = 5
DO
n + 3
DO
n + 2
DO
n + 1
DO
n DO
b + 3
DO
b + 2
DO
b + 1
DO
b
RL = 5
tCCD
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BC4, RL = 5 (CL = 5, AL = 0).
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 164 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 72: Nonconsecutive READ Bursts
Don’t CareTransitioning Data
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
DQS, DQS#
Command NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOPNOPREAD NOP READ
Address Bank a,
Col n Bank a,
Col b
CK
CK#
DQ
DO
nDO
b
CL = 8
CL = 8
Notes: 1. AL = 0, RL = 8.
2. DO n (or b) = data-out from column n (or column b).
3. Seven subsequent elements of data-out appear in the programmed order following DO n.
4. Seven subsequent elements of data-out appear in the programmed order following DO b.
Figure 73: READ (BL8) to WRITE (BL8)
Don’t CareTransitioning Data
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
CK
CK#
Command1NOP NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP
tWPST
tRPRE tWPRE
tRPST
DQS, DQS#
DQ
3
WL = 5
tWR
tWR
READ
DO
n DO
n + 1 DO
n + 2 DO
n + 3 DO
n + 4 DO
n + 5 DO
n + 6 DO
n + 7 DI
n DI
n + 1 DI
n + 2 DI
n + 3 DI
n + 4 DI
n + 5 DI
n + 6 DI
n + 7
READ-to-WRITE command delay = RL + tCCD + 2tCK - WL tBL = 4 clocks
Address2Bank,
Col b
Bank,
Col n
RL = 5
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at
T0, and the WRITE command at T6.
3. DO n = data-out from column, DI b = data-in for column b.
4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 165 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 74: READ (BC4) to WRITE (BC4) OTF
Don’t CareTransitioning Data
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
CK
CK#
Address
2
Command
1
tWPST
tWPRE
tRPST
DQS, DQS#
DQ
3
WL = 5
tWR
tWTR
tBL = 4 clocks
tRPRE
RL = 5
READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL
READ
DO
nDO
n + 1 DO
n + 2 DO
n + 3 DI
nDI
n + 1 DI
n + 2 DI
n + 3
Bank,
Col b
Bank,
Col n
NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at
T4.
3. DO n = data-out from column n; DI n = data-in from column b.
4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
Figure 75: READ to PRECHARGE (BL8)
tRAS
tRTP
CK
CK#
Command NOP NOP NOP NOP
Address
DQ
DQS, DQS#
Don’t CareTransitioning Data
NOP NOP NOP NOP NOP ACT NOP NOP NOP NOP
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
NOPREAD
Bank a,
Col n
NOP PRE
Bank a,
(or all) Bank a,
Row b
tRP
DO
nDO
n + 1 DO
n + 2 DO
n + 3 DO
n + 4 DO
n + 5 DO
n + 6 DO
n + 7
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 166 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 76: READ to PRECHARGE (BC4)
CK
CK#
Don’t CareTransitioning Data
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
Command NOP NOP NOP NOP NOP NOP NOP NOP NOP ACT NOP NOP NOP NOP
NOPREAD NOP PRE
Address
Bank a,
Col n Bank a,
(or all) Bank a,
Row b
tRP
tRTP
DQS, DQS#
DQ
DO
nDO
n + 1 DO
n + 2 DO
n + 3
tRAS
Figure 77: READ to PRECHARGE (AL = 5, CL = 6)
CK
CK#
Command NOP NOP NOP NOP
Address
DQ
DQS, DQS#
Don’t CareTransitioning Data
NOP NOP NOP NOP NOP
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
NOPREAD
Bank a,
Col n
NOP PRE
Bank a,
(or all)
ACT
Bank a,
Row b
NOP NOP
tRAS
CL = 6
AL = 5 tRTP tRP
DO
n + 3
DO
n + 2
DO
nDO
n + 1
Figure 78: READ with Auto Precharge (AL = 4, CL = 6)
CK
CK#
Command NOP NOP NOP NOP
Address
DQ
DQS, DQS#
Don’t CareTransitioning Data
NOP NOP NOP NOP NOP
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0
tRTP (MIN)
NOPREAD NOP
AL = 4
NOP NOP
CL = 6
NOP
tRAS (MIN)
ACT
Indicates break
in time scale
tRP
Bank a,
Col n Bank a,
Row b
DO
nDO
n + 1 DO
n + 2 DO
n + 3
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 167 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
DQS to DQ output timing is shown in Figure 79 (page 169). The DQ transitions between
valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must
also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ
preamble, the DQ balls will either be floating or terminated, depending on the status of
the ODT signal.
Figure 80 (page 170) shows the strobe-to-clock timing during a READ. The crossing
point DQS, DQS# must transition within ±tDQSCK of the clock crossing point. The data
out has no timing relationship to CK, only to DQS, as shown in Figure 80 (page 170).
Figure 80 (page 170) also shows the READ preamble and postamble. Typically, both
DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM,
DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble.
The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. Dur-
ing the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the
DQ is disabled or continues terminating, depending on the state of the ODT signal. Fig-
ure 83 (page 172) demonstrates how to measure tRPST.
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 168 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 79: Data Output Timing – tDQSQ and Data Valid Window
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
Bank,
Col n
tRPST
NOP
READ NOPNOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command1
Address2
tDQSQ (MAX)
DQS, DQS#
DQ3 (last data valid)
DQ3 (first data no longer valid)
All DQ collectively
DO
nDO
n + 3
DO
n + 2
DO
n + 1 DO
n + 7
DO
n + 6
DO
n + 5
DO
n + 4
DO
n + 2
DO
n + 1 DO
n + 7
DO
n + 6
DO
n + 5
DO
n + 4
DO
n + 3
DO
n + 2
DO
n + 1
DO
n DO
n + 7
DO
n + 6
DO
n + 5
DO
n DO
n + 3
tRPRE
Don’t Care
Data valid Data valid
tQH
tQH
tHZ
DQ (MAX)
DO
n + 4
RL = AL + CL
tDQSQ (MAX)
tLZ
DQ (MIN)
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at
T0.
3. DO n = data-out from column n.
4. BL8, RL = 5 (AL = 0, CL = 5).
5. Output timings are referenced to VDDQ/2 and DLL on and locked.
6. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK.
7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within
a burst.
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 169 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
tHZ and tLZ transitions occur in the same access time as valid data transitions. These
parameters are referenced to a specific voltage level that specifies when the device out-
put is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ. Figure
81 (page 171) shows a method of calculating the point when the device is no longer
driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ, by measuring the signal
at two different voltages. The actual voltage measurement points are not critical as long
as the calculation is consistent. The parameters tLZDQS, tLZDQ, tHZDQS, and tHZDQ
are defined as single-ended.
Figure 80: Data Strobe Timing – READs
RL measured
to this point
DQS, DQS#
early strobe
CK
tLZDQS (MIN)
tHZDQS (MIN)
DQS, DQS#
late strobe
tLZDQS (MAX) tHZDQS (MAX)
tDQSCK (MAX) tDQSCK (MAX) tDQSCK (MAX) tDQSCK (MAX)
tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN) tDQSCK (MIN)
CK#
tRPRE
tQSH tQSH
tQSL tQSL
tQSL tQSL
tQSH tQSH
Bit 0 Bit 1 Bit 2 Bit 7
tRPRE
Bit 0 Bit 1 Bit 2 Bit 7Bit 6Bit 3 Bit 4 Bit 5
Bit 6Bit 4Bit 3 Bit 5
tRPST
tRPST
T0 T1 T2 T3 T4 T5 T6
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 170 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 81: Method for Calculating tLZ and tHZ
tHZDQS, tHZDQ
tHZDQS, tHZDQ end point = 2 × T1 - T2
VOH - xmV
VTT - xmV
VOL + xmV
VTT + xmV
VOH - 2xmV
VTT - 2xmV
VOL + 2xmV
VTT + 2xmV
tLZDQS, tLZDQ
tLZDQS, tLZDQ begin point = 2 × T1 - T2
T1
T1
T2
T2
Notes: 1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK
(MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK
(MAX).
2. The DQS HIGH pulse width is defined by tQSH, and the DQS LOW pulse width is defined
by tQSL. Likewise, tLZDQS (MIN) and tHZDQS (MIN) are not tied to tDQSCK (MIN) (early
strobe case), and tLZDQS (MAX) and tHZDQS (MAX) are not tied to tDQSCK (MAX) (late
strobe case); however, they tend to track one another.
3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The mini-
mum pulse width of the READ postamble is defined by tRPST (MIN).
Figure 82: tRPRE Timing
tRPRE
DQS - DQS#
DQS
DQS#
T1
tRPRE begins
T2
tRPRE ends
CK
CK#
VTT
Resulting differential
signal relevant for
tRPRE specification
tC
tAtB
tD
Single-ended signal provided
as background information
0V
Single-ended signal provided
as background information
VTT
VTT
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 171 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 83: tRPST Timing
tRPST
DQS - DQS#
DQS
DQS#
T1
tRPST begins T2
tRPST ends
Resulting differential
signal relevant for
tRPST specification
CK
CK#
VTT
tC
tA
tB
tD
Single-ended signal, provided
as background information
Single-ended signal, provided
as background information
0V
VTT
VTT
4Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 172 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
WRITE Operation
WRITE bursts are initiated with a WRITE command. The starting column and bank ad-
dresses are provided with the WRITE command, and auto precharge is either enabled or
disabled for that access. If auto precharge is selected, the row being accessed is pre-
charged at the end of the WRITE burst. If auto precharge is not selected, the row will
remain open for subsequent accesses. After a WRITE command has been issued, the
WRITE burst may not be interrupted. For the generic WRITE commands used in Figure
86 (page 175) through Figure 94 (page 180), auto precharge is disabled.
During WRITE bursts, the first valid data-in element is registered on a rising edge of
DQS following the WRITE latency (WL) clocks later and subsequent data elements will
be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of
posted CAS additive latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The
values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior
to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS,
DQS#) and specified as the WRITE preamble shown in Figure 86 (page 175). The half
cycle on DQS following the last data-in element is known as the WRITE postamble.
The time between the WRITE command and the first valid edge of DQS is WL clocks
±tDQSS. Figure 87 (page 176) through Figure 94 (page 180) show the nominal case
where tDQSS = 0ns; however, Figure 86 (page 175) includes tDQSS (MIN) and tDQSS
(MAX) cases.
Data may be masked from completing a WRITE using data mask. The data mask occurs
on the DM ball aligned to the WRITE data. If DM is LOW, the WRITE completes normal-
ly. If DM is HIGH, that bit of data is masked.
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will remain High-Z, and any additional input data will be ignored.
Data for any WRITE burst may be concatenated with a subsequent WRITE command to
provide a continuous flow of input data. The new WRITE command can be tCCD clocks
following the previous WRITE command. The first data element from the new burst is
applied after the last element of a completed burst. Figure 87 (page 176) and Figure 88
(page 176) show concatenated bursts. An example of nonconsecutive WRITEs is shown
in Figure 89 (page 177).
Data for any WRITE burst may be followed by a subsequent READ command after tWTR
has been met (see Figure 90 (page 177), Figure 91 (page 178), and Figure 92 (page
179)).
Data for any WRITE burst may be followed by a subsequent PRECHARGE command,
providing tWR has been met, as shown in Figure 93 (page 180) and Figure 94 (page
180).
Both tWTR and tWR starting time may vary, depending on the mode register settings
(fixed BC4, BL8 versus OTF).
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 173 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 84: tWPRE Timing
DQS - DQS#
T1
tWPRE begins
T2
tWPRE ends
tWPRE
Resulting differential
signal relevant for
tWPRE specification
0V
CK
CK#
VTT
Figure 85: tWPST Timing
tWPST
DQS - DQS#
T1
tWPST begins
T2
tWPST ends
Resulting differential
signal relevant for
tWPST specification
0V
CK
CK#
VTT
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 174 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 86: WRITE Burst
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
Don’t Care
Transitioning Data
DI
n + 7
DI
n + 6
DI
n + 5
DI
n + 4
Bank,
Col n
NOP
WRITE NOP
NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
1
DQ
3
DQS, DQS#
Address
2
tWPST
t
WPRE
t
WPST
t
DQSL
DQ
3
DQ
3
tWPST
DQS, DQS#
DQS, DQS#
tDQSL
tWPRE
t
DQSS
tDQSS tDSH tDSH tDSH tDSH
t
DSS
t
DSS
t
DSS
t
DSS
t
DSS
t
DSS
t
DSS
t
DSS
t
DSS
t
DSS
tDSH tDSH tDSH tDSH
tDQSL
tDQSH tDQSL
tDQSH tDQSL
tDQSH tDQSH tDQSL
tDQSL
t
DQSL
tDQSL
tDQSH
tDQSH
tDQSH
t
DQSH
tDQSL
tDQSH tDQSL
tDQSH tDQSH
t
DQSL
t
DQSH
t
DQSL
t
DQSH
t
DQSL
t
DQSH
t
DQSH
WL = AL + CWL
tDQSS (MIN)
tDQSS (NOM)
tDQSS (MAX)
tDQSL
tWPRE
DI
n + 3
DI
n + 2
DI
n + 1
DI
n DI
n + 7
DI
n + 6
DI
n + 5
DI
n + 4
DI
n + 3
DI
n + 2
DI
n + 1
DI
n DI
n + 7
DI
n + 6
DI
n + 5
DI
n + 4
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during
the WRITE command at T0.
3. DI n = data-in for column n.
4. BL8, WL = 5 (AL = 0, CWL = 5).
5. tDQSS must be met at each rising clock edge.
6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST ac-
tually ends when DQS no longer drives LOW and DQS# no longer drives HIGH.
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 175 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 87: Consecutive WRITE (BL8) to WRITE (BL8)
WL = 5
WL = 5
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tCCD
tWPRE
T10 T11
Don’t CareTransitioning Data
T12 T13 T14
Valid
Valid
NOP
WRITE WRITE
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
1
DQ
3
DQS, DQS#
Address
2
tWPST
tWR
tWTR
tBL = 4 clocks
DI
n + 3
DI
n + 2
DI
n + 1
DI
n DI
n + 7
DI
n + 6
DI
n + 5
DI
n + 4 DI
b + 3
DI
b + 2
DI
b + 1
DI
b DI
b + 7
DI
b + 6
DI
b + 5
DI
b + 4
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at
T0 and T4.
3. DI n (or b) = data-in for column n (or column b).
4. BL8, WL = 5 (AL = 0, CWL = 5).
Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via OTF
WL = 5
WL = 5
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tCCD
tWPRE
T10 T11
Don’t CareTransitioning Data
T12 T13 T14
Valid Valid
NOPWRITE WRITENOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
1
DQ
3
DQS, DQS#
Address
2
tWPST
tWR
tWTR
tWPST tWPRE
DI
n + 3
DI
n + 2
DI
n + 1
DI
nDI
b + 3
DI
b + 2
DI
b + 1
DI
b
tBL = 4 clocks
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. BC4, WL = 5 (AL = 0, CWL = 5).
3. DI n (or b) = data-in for column n (or column b).
4. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4.
5. If set via MRS (fixed) tWR and tWTR would start T11 (2 cycles earlier).
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 176 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 89: Nonconsecutive WRITE to WRITE
CK
CK#
Command NOP NOP NOP
Address
DQ
DM
DQS, DQS#
Transitioning Data
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17
NOPWRITE NOP WRITE
Valid
Valid
NOP
DI
nDI
n + 1 DI
n + 2 DI
n + 3 DI
n + 4 DI
n + 5 DI
n + 6
Don't Care
DI
n + 7 DI
bDI
b + 1 DI
b + 2 DI
b + 3 DI
b + 4 DI
b + 5 DI
b + 6 DI
b + 7
WL = CWL + AL = 7
WL = CWL + AL = 7
Notes: 1. DI n (or b) = data-in for column n (or column b).
2. Seven subsequent elements of data-in are applied in the programmed order following DO n.
3. Each WRITE command may be to any bank.
4. Shown for WL = 7 (CWL = 7, AL = 0).
Figure 90: WRITE (BL8) to READ (BL8)
WL = 5
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tWPRE
T10 T11
Don’t Care
Transitioning Data
Ta0
NOP
WRITE READ
Valid
Valid
NOP NOP NOP NOP NOP NOP NOP NOPNOP NOP
CK
CK#
Command
1
DQ
4
DQS, DQS#
Address
3
tWPST
tWTR2
Indicates break
in time scale
DI
n + 3
DI
n + 2
DI
n + 1
DI
nDI
n + 7
DI
n + 6
DI
n + 5
DI
n + 4
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T9.
3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command
at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0.
4. DI n = data-in for column n.
5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 177 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 91: WRITE to READ (BC4 Mode Register Setting)
WL = 5
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0
Don’t CareTransitioning Data
NOP
WRITE
Valid
READ
Valid
NOP NOP NOP NOP NOP NOP NOPNOP
CK
CK#
Command
1
DQ
4
DQS, DQS#
Address
3
tWPST
tWTR2
tWPRE
Indicates break
in time scale
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last
write data shown at T7.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at
Ta0.
4. DI n = data-in for column n.
5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5).
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 178 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 92: WRITE (BC4 OTF) to READ (BC4 OTF)
WL = 5 RL = 5
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tWPRE
T10 T11
Don’t CareTransitioning Data
Tn
NOP
WRITE READ
ValidValid
NOP NOP NOP NOP NOP NOP NOP NOPNOP
CK
CK#
Command
1
DQ
4
DQS, DQS#
Address
3
tWPST
tBL = 4 clocks
NOP
tWTR2
Indicates break
in time scale
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. tWTR controls the WRITE-to-READ delay to the same device and starts after tBL.
3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ
command at Tn.
4. DI n = data-in for column n.
5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 179 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 93: WRITE (BL8) to PRECHARGE
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
DI
n + 6 DI
n + 7
DI
n + 5
DI
n + 4
NOPWRITE
Valid
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE
CK
CK#
Command
DQ BL8
DQS, DQS#
Address
Don’t CareTransitioning Data
Indicates break
in time scale
tWR
WL = AL + CWL
Valid
Notes: 1. DI n = data-in from column n.
2. Seven subsequent elements of data-in are applied in the programmed order following
DO n.
3. Shown for WL = 7 (AL = 0, CWL = 7).
Figure 94: WRITE (BC4 Mode Register Setting) to PRECHARGE
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
NOPWRITE
Valid
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE
CK
CK#
Command
DQ BC4
DQS, DQS#
Address
Don’t CareTransitioning Data
Indicates break
in time scale
tWR
WL = AL + CWL
Valid
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The write recovery time (tWR) is referenced from the first rising clock edge after the last
write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE
command can be issued to the same bank.
3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0.
4. DI n = data-in for column n.
5. BC4 (fixed), WL = 5, RL = 5.
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 180 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 95: WRITE (BC4 OTF) to PRECHARGE
WL = 5
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Tn
Don’t CareTransitioning Data
Bank,
Col n
NOPWRITE PRE
NOP NOP NOP NOP NOP NOP NOPNOP
CK
CK#
Command
1
DQ
4
DQS, DQS#
Address
3
tWPST
tWPRE
Indicates break
in time scale
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
tWR2
Valid
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR speci-
fies the last burst WRITE cycle until the PRECHARGE command can be issued to the same
bank.
3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command
at T0.
4. DI n = data-in for column n.
5. BC4 (OTF), WL = 5, RL = 5.
DQ Input Timing
Figure 86 (page 175) shows the strobe-to-clock timing during a WRITE burst. DQS,
DQS# must transition within 0.25tCK of the clock transitions, as limited by tDQSS. All
data and data mask setup and hold timings are measured relative to the DQS, DQS#
crossing, not the clock crossing.
The WRITE preamble and postamble are also shown in Figure 86 (page 175). One clock
prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for
a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble,
tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written
to the DRAM during the WRITE postamble, tWPST.
Data setup and hold times are also shown in Figure 86 (page 175). All setup and hold
times are measured from the crossing points of DQS and DQS#. These setup and hold
values pertain to data input and data mask input.
Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL.
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 181 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 96: Data Input Timing
tDH tDH
tDS tDS
DM
DQ DI
b
DQS, DQS#
Don’t CareTransitioning Data
tDQSH tDQSL
tWPRE tWPST
4Gb: x4, x8, x16 DDR3L SDRAM
WRITE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 182 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
PRECHARGE Operation
Input A10 determines whether one bank or all banks are to be precharged and, in the
case where only one bank is to be precharged, inputs BA[2:0] select the bank.
When all banks are to be precharged, inputs BA[2:0] are treated as “Don’t Care.” After a
bank is precharged, it is in the idle state and must be activated prior to any READ or
WRITE commands being issued.
SELF REFRESH Operation
The SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW.
The DLL is automatically disabled upon entering SELF REFRESH and is automatically
enabled and reset upon exiting SELF REFRESH.
All power supply inputs (including VREFCA and VREFDQ) must be maintained at valid lev-
els upon entry/exit and during self refresh mode operation. VREFDQ may float or not
drive VDDQ/2 while in self refresh mode under certain conditions:
•V
SS < VREFDQ < VDD is maintained.
•V
REFDQ is valid and stable prior to CKE going back HIGH.
• The first WRITE operation may not occur earlier than 512 clocks after VREFDQ is valid.
• All other self refresh mode exit timing requirements are met.
The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no
bursts are in progress) before a self refresh entry command can be issued. ODT must
also be turned off before self refresh entry by registering the ODT ball LOW prior to the
self refresh entry command (see On-Die Termination (ODT) ( for timing requirements).
If RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”
After the self refresh entry command is registered, CKE must be held LOW to keep the
DRAM in self refresh mode.
After the DRAM has entered self refresh mode, all external control signals, except CKE
and RESET#, are “Don’t Care.” The DRAM initiates a minimum of one REFRESH com-
mand internally within the tCKE period when it enters self refresh mode.
The requirements for entering and exiting self refresh mode depend on the state of the
clock during self refresh mode. First and foremost, the clock must be stable (meeting
tCK specifications) when self refresh mode is entered. If the clock remains stable and
the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit
self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR
later than when CKE was registered LOW). Since the clock remains stable in self refresh
mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the
clock is altered during self refresh mode (if it is turned-off or its frequency changes),
then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE
must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh
mode, tCKSRX must be satisfied prior to registering CKE HIGH.
When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS
is required for the completion of any internal refresh already in progress and must be
satisfied before a valid command not requiring a locked DLL can be issued to the de-
vice. tXS is also the earliest time self refresh re-entry may occur. Before a command re-
quiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER tim-
ing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL.
4Gb: x4, x8, x16 DDR3L SDRAM
PRECHARGE Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 183 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 97: Self Refresh Entry/Exit Timing
CK
CK#
Command NOP NOP
4
SRE (REF)
3
Address
CKE
ODT
2
RESET#
2
Valid
Valid
6
SRX (NOP) NOP
5
tRP8
tXSDLL7, 9
ODTL
tIS
tCPDED
tIS
tIS
Enter self refresh mode
(synchronous) Exit self refresh mode
(asynchronous)
T0 T1 T2 Tc0 Tc1 Td0Tb0
Don’t Care
Te0
Valid
Valid
7
Valid
Valid Valid
tIH
Ta0 Tf0
Indicates break
in time scale
tCKSRX1
tCKSRE1
tXS6, 9
tCKESR (MIN)1
Notes: 1. The clock must be valid and stable, meeting tCK specifications at least tCKSRE after en-
tering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the
clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and
unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not
apply; however, tCKESR must be satisfied prior to exiting at SRX.
2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both
RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a “Don’t Care.”
3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW.
4. A NOP or DES command is required at T2 after the SRE command is issued prior to the
inputs becoming “Don’t Care.”
5. NOP or DES commands are required prior to exiting self refresh mode until state Te0.
6. tXS is required before any commands not requiring a locked DLL.
7. tXSDLL is required before any commands requiring a locked DLL.
8. The device must be in the all banks idle state prior to entering self refresh mode. For
example, all banks must be precharged, tRP must be met, and no data bursts can be in
progress.
9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising
clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that
tISXR is satisfied at Tc1.
4Gb: x4, x8, x16 DDR3L SDRAM
SELF REFRESH Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 184 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Extended Temperature Usage
Micron’s DDR3 SDRAM support the optional extended case temperature (TC) range of
0°C to 105°C. Thus, the SRT and ASR options must be used at a minimum for tempera-
tures above 85°C (and does not exceed 105°C).
The extended temperature range DRAM must be refreshed manually at 2x (double re-
fresh) anytime the case temperature is above 85°C (and does not exceed 95°C) and 4x
(four times refresh) anytime the case temperature is above 95°C (and does not exceed
105°C). The manual refresh requirement is accomplished by reducing the refresh period
from 64ms to 32ms (2x refresh) or 64ms to 16ms (4x refresh). However, self refresh mode
requires either ASR or SRT to support the extended temperature. Thus, either ASR or
SRT must be enabled when TC is above 85°C or self refresh cannot be used until TC is at
or below 85°C. Table 79 summarizes the two extended temperature options and Table
80 summarizes how the two extended temperature options relate to one another.
Table 79: Self Refresh Temperature and Auto Self Refresh Description
Field MR2 Bits Description
Self Refresh Temperature (SRT)
SRT 7 If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh:
*MR2[7] = 0: Normal operating temperature range (0°C to 85°C)
*MR2[7] = 1: Extended operating temperature range (0°C to 105°C)
If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is
supported
*MR2[7] = 0: SRT is disabled
Auto Self Refresh (ASR)
ASR 6 When ASR is enabled, the DRAM automatically provides SELF REFRESH power management func-
tions, (refresh rate for all supported operating temperature values)
* MR2[6] = 1: ASR is enabled (M7 must = 0)
When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH
operation
* MR2[6] = 0: ASR is disabled; must use manual self refresh temperature (SRT)
Table 80: Self Refresh Mode Summary
MR2[6]
(ASR)
MR2[7]
(SRT) SELF REFRESH Operation
Permitted Operating Temperature
Range for Self Refresh Mode
0 0 Self refresh mode is supported in the normal temperature
range
Normal (0°C to 85°C)
0 1 Self refresh mode is supported in normal and extended temper-
ature ranges; When SRT is enabled, it increases self refresh
power consumption
Normal and extended (0°C to 105°C)
1 0 Self refresh mode is supported in normal and extended temper-
ature ranges; Self refresh power consumption may be tempera-
ture-dependent
Normal and extended (0°C to 105°C)
1 1 Illegal
4Gb: x4, x8, x16 DDR3L SDRAM
Extended Temperature Usage
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 185 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Power-Down Mode
Power-down is synchronously entered when CKE is registered LOW coincident with a
NOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL,
READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the
other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or RE-
FRESH) are in progress. However, the power-down IDD specifications are not applicable
until such operations have completed. Depending on the previous DRAM state and the
command issued prior to CKE going LOW, certain timing constraints must be satisfied
(as noted in Table 81). Timing diagrams detailing the different power-down mode entry
and exits are shown in Figure 98 (page 188) through Figure 107 (page 192).
Table 81: Command to Power-Down Entry Parameters
DRAM Status
Last Command Prior to
CKE LOW1Parameter (Min) Parameter Value Figure
Idle or active ACTIVATE tACTPDEN 1tCK Figure 105 (page 191)
Idle or active PRECHARGE tPRPDEN 1tCK Figure 106 (page 192)
Active READ or READAP tRDPDEN RL + 4tCK + 1tCK Figure 101 (page 189)
Active WRITE: BL8OTF, BL8MRS,
BC4OTF
tWRPDEN WL + 4tCK + tWR/tCK Figure 102 (page 190)
Active WRITE: BC4MRS WL + 2tCK + tWR/tCK Figure 102 (page 190)
Active WRITEAP: BL8OTF, BL8MRS,
BC4OTF
tWRAPDEN WL + 4tCK + WR + 1tCK Figure 103 (page 190)
Active WRITEAP: BC4MRS WL + 2tCK + WR + 1tCK Figure 103 (page 190)
Idle REFRESH tREFPDEN 1tCK Figure 104 (page 191)
Power-down REFRESH tXPDLL Greater of 10tCK or 24ns Figure 108 (page 193)
Idle MODE REGISTER SET tMRSPDEN tMOD Figure 107 (page 192)
Note: 1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asyn-
chronous tANPD prior to CKE going LOW and remains asynchronous until tANPD +
tXPDLL after CKE goes HIGH.
Entering power-down disables the input and output buffers, excluding CK, CK#, ODT,
CKE, and RESET#. NOP or DES commands are required until tCPDED has been satis-
fied, at which time all specified input/output buffers are disabled. The DLL should be in
a locked state when power-down is entered for the fastest power-down exit timing. If
the DLL is not locked during power-down entry, the DLL must be reset after exiting
power-down mode for proper READ operation as well as synchronous ODT operation.
During power-down entry, if any bank remains open after all in-progress commands are
complete, the DRAM will be in active power-down mode. If all banks are closed after all
in-progress commands are complete, the DRAM will be in precharge power-down
mode. Precharge power-down mode must be programmed to exit with either a slow exit
mode or a fast exit mode. When entering precharge power-down mode, the DLL is
turned off in slow exit mode or kept on in fast exit mode.
The DLL also remains on when entering active power-down. ODT has special timing
constraints when slow exit mode precharge power-down is enabled and entered. Refer
to Asynchronous ODT Mode (page 209) for detailed ODT usage requirements in slow
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 186 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
exit mode precharge power-down. A summary of the two power-down modes is listed in
Table 82 (page 187).
While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable
clock signal must be maintained. ODT must be in a valid state but all other input signals
are “Don’t Care.” If RESET# goes LOW during power-down, the DRAM will switch out of
power-down mode and go into the reset state. After CKE is registered LOW, CKE must
remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for power-
down duration is tPD (MAX) (9 × tREFI).
The power-down states are synchronously exited when CKE is registered HIGH (with a
required NOP or DES command). CKE must be maintained HIGH until tCKE has been
satisfied. A valid, executable command may be applied after power-down exit latency,
tXP, and tXPDLL have been satisfied. A summary of the power-down modes is listed be-
low.
For specific CKE-intensive operations, such as repeating a power-down-exit-to-refresh-
to-power-down-entry sequence, the number of clock cycles between power-down exit
and power-down entry may not be sufficient to keep the DLL properly updated. In addi-
tion to meeting tPD when the REFRESH command is used between power-down exit
and power-down entry, two other conditions must be met. First, tXP must be satisfied
before issuing the REFRESH command. Second, tXPDLL must be satisfied before the
next power-down may be entered. An example is shown in Figure 108 (page 193).
Table 82: Power-Down Modes
DRAM State MR0[12] DLL State
Power-
Down Exit Relevant Parameters
Active (any bank open) “Don’t Care” On Fast tXP to any other valid command
Precharged
(all banks precharged)
1 On Fast tXP to any other valid command
0 Off Slow tXPDLL to commands that require the DLL to be
locked (READ, RDAP, or ODT on);
tXP to any other valid command
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 187 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 98: Active Power-Down Entry and Exit
CK
CK#
Command NOP NOP NOP NOP
Address
CKE
tCK tCH tCL
Enter power-down
mode
Exit power-down
mode
Don’t Care
ValidValid
Valid
tCPDED
Valid
tIS
tIH
tIH
tIS
T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
NOP
tXP
tCKE (MIN)
Indicates break
in time scale
tPD
Figure 99: Precharge Power-Down (Fast-Exit Mode) Entry and Exit
CK
CK#
Command NOP NOP NOP NOP
CKE
tCK tCH tCL
Enter power-down
mode
Exit power-down
mode
tPD
Valid
tCPDED
tIS
tIH
tIS
T0 T1 T2 T3 T4 T5 Ta0 Ta1
NOP
Don’t Care
Indicates break
in time scale
tXP
tCKE (MIN)
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 188 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 100: Precharge Power-Down (Slow-Exit Mode) Entry and Exit
CK
CK#
Command NOP NOP NOP
CKE
tCK tCH tCL
Enter power-down
mode
Exit power-down
mode
tPD
Valid
2
Valid
1
PRE
tXPDLL
tCPDED
tIS
tIH
tIS
T0 T1 T2 T3 T4 Ta Ta1 Tb
NOP
Don’t Care
Indicates break
in time scale
tXP
tCKE (MIN)
Notes: 1. Any valid command not requiring a locked DLL.
2. Any valid command requiring a locked DLL.
Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Ta8 Ta9
Don’t CareTransitioning Data
Ta10 Ta11 Ta12
NOP
Valid
READ/
RDAP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
DQ BL8
DQ BC4
DQS, DQS#
Address
CKE
tCPDED
tIS
tPD
Power-down or
self refresh entry
Indicates break
in time scale
tRDPDEN
DI
n + 3
DI
n + 1 DI
n + 2
DI
n
RL = AL + CL
DI
n + 3
DI
n + 2
DI
n + 1
DI
nDI
n + 6 DI
n + 7
DI
n+ 5
DI
n + 4
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 189 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 102: Power-Down Entry After WRITE
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 Tb3 Tb4
NOPWRITE
Valid
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
DQ BL8
DQ BC4
DQS, DQS#
Address
CKE
tCPDED
Power-down or
self refresh entry1
Don’t CareTransitioning Data
tWRPDEN
DI
n + 3
DI
n + 1 DI
n + 2
DI
n
tPD
Indicates break
in time scale
DI
n + 3
DI
n + 2
DI
n + 1
DI
n DI
n + 6 DI
n + 7
DI
n + 5
DI
n + 4
tIS
WL = AL + CWL tWR
Note: 1. CKE can go LOW 2tCK earlier if BC4MRS.
Figure 103: Power-Down Entry After WRITE with Auto Precharge (WRAP)
T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1
Don’t CareTransitioning Data
Tb2 Tb3 Tb4
NOPWRAP
Valid
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
DQ BL8
DQ BC4
DQS, DQS#
Address
A10
CKE
tPD
tWRAPDEN
Power-down or
self refresh entry2
Start internal
precharge
tCPDED
tIS
Indicates break
in time scale
DI
n + 3
DI
n + 2
DI
n + 1
DI
nDI
n + 6 DI
n + 7
DI
n + 5
DI
n + 4
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
WR1
WL = AL + CWL
Notes: 1. tWR is programmed through MR0[11:9] and represents tWRmin (ns)/tCK rounded up to
the next integer tCK.
2. CKE can go LOW 2tCK earlier if BC4MRS.
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 190 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 104: REFRESH to Power-Down Entry
CK
CK#
Command REFRESH NOP NOP NOP NOP Valid
CKE
tCK tCH tCL
tCPDED
tREFPDEN
tIS
T0 T1 T2 T3 Ta0 Ta1 Ta2 Tb0
tXP (MIN)
tRFC (MIN)1
Don’t Care
Indicates break
in time scale
tCKE (MIN)
tPD
Note: 1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied.
Figure 105: ACTIVATE to Power-Down Entry
CK
CK#
Command
Address
ACTIVE NOP NOP
CKE
tCK tCH tCL
Don’t Care
tCPDED
tACTPDEN
Valid
tIS
T0 T1 T2 T3 T4 T5 T6 T7
tPD
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 191 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 106: PRECHARGE to Power-Down Entry
CK
CK#
Command
Address
CKE
tCK tCH tCL
Don’t Care
tCPDED
tPREPDEN
tIS
T0 T1 T2 T3 T4 T5 T6 T7
tPD
All/single
bank
PRE NOP NOP
Figure 107: MRS Command to Power-Down Entry
CK
CK#
CKE
tCK tCH tCL tCPDED
Address
tIS
T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4
tPD
Don’t Care
Indicates break
in time scale
Valid
Command
MRS NOP
NOP NOP NOP NOP
tMRSPDEN
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 192 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 108: Power-Down Exit to Refresh to Power-Down Entry
CK
CK#
CKE
tCK tCH tCL
Enter power-down
mode
Enter power-down
mode
Exit power-down
mode
tPD
tCPDED
tIS
tIH
tIS
T0 T1 T2 T3 T4 Ta0 Ta1 Tb0
Don’t Care
Indicates break
in time scale
Command NOP NOP NOP NOP
REFRESH NOP
NOP
tXP1
tXPDLL2
Notes: 1. tXP must be satisfied before issuing the command.
2. tXPDLL must be satisfied (referenced to the registration of power-down exit) before the
next power-down can be entered.
4Gb: x4, x8, x16 DDR3L SDRAM
Power-Down Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 193 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
RESET Operation
The RESET signal (RESET#) is an asynchronous reset signal that triggers any time it
drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes
LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT
(RTT) turns off (High-Z), and the DRAM resets itself. CKE should be driven LOW prior to
RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be re-initialized
as though a normal power-up was executed. All counters, except refresh counters, on
the DRAM are reset, and data stored in the DRAM is assumed unknown after RESET#
has gone LOW.
4Gb: x4, x8, x16 DDR3L SDRAM
RESET Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 194 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 109: RESET Sequence
T = 10ns (MIN)
T = 100ns (MIN)
T = 500μs (MIN) tXPR tMRD tMRD tMRD tMOD
tCK
tIOZ = 20ns
CKE
RTT
BA[2:0]
All voltage
supplies valid
and stable
High-Z
DM
DQS High-Z
Address
A10
CK
CK#
tCL
Command NOP
T0 Ta0
Don’t Care
tCL
ODT
DQ High-Z
Tb0
tDLLK
MR1 with
DLL ENABLE
MRSMRS
BA0 = H
BA1 = L
BA2 = L
BA0 = L
BA1 = L
BA2 = L
Code Code
Code Code
Valid
Valid
Valid
Valid
Normal
operation
MR2 MR3
MRSMRS
BA0 = L
BA1 = H
BA2 = L
BA0 = H
BA1 = H
BA2 = L
Code Code
Code Code
Tc0 Td0
RESET#
Stable and
valid clock
Valid
DRAM ready
for external
commands
T1
tZQinit
A10 = H
ZQCL
tIS
Valid
System RESET
(warm boot)
ZQCAL
MR0 with
DLL RESET
Indicates break
in time scale
tCKSRX1
tIS
tIS
tIS
Static LOW in case RTT_Nom is enabled at time Ta0, otherwise static HIGH or LOW
Note: 1. The minimum time required is the longer of 10ns or 5 clocks.
4Gb: x4, x8, x16 DDR3L SDRAM
RESET Operation
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 195 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
On-Die Termination (ODT)
On-die termination (ODT) is a feature that enables the DRAM to enable/disable and
turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8
configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is ap-
plied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 con-
figuration.
ODT is designed to improve signal integrity of the memory channel by enabling the
DRAM controller to independently turn on/off the DRAM’s internal termination resist-
ance for any grouping of DRAM devices. ODT is not supported during DLL disable
mode (simple functional representation shown below). The switch is enabled by the in-
ternal ODT control logic, which uses the external ODT ball and other control informa-
tion.
Figure 110: On-Die Termination
ODT
VDDQ/2
RTT
Switch
DQ, DQS, DQS#,
DM, TDQS, TDQS#
To other
circuitry
such as
RCV,
. . .
Functional Representation of ODT
The value of RTT (ODT termination resistance value) is determined by the settings of
several mode register bits (see Table 88 (page 200)). The ODT ball is ignored while in
self refresh mode (must be turned off prior to self refresh entry) or if mode registers
MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and
dynamic ODT modes and either of these can function in synchronous or asynchronous
mode (when the DLL is off during precharge power-down or when the DLL is synchro-
nizing). Nominal ODT is the base termination and is used in any allowable ODT state.
Dynamic ODT is applied only during writes and provides OTF switching from no RTT or
RTT,nom to RTT(WR).
The actual effective termination, RTT(EFF), may be different from RTT targeted due to
nonlinearity of the termination. For RTT(EFF) values and calculations, see Table 33 (page
60).
Nominal ODT
ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or
disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or
off via the ODT ball.
4Gb: x4, x8, x16 DDR3L SDRAM
On-Die Termination (ODT)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 196 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 83: Truth Table – ODT (Nominal)
Note 1 applies to the entire table
MR1[9, 6, 2] ODT Pin DRAM Termination State DRAM State Notes
000 0 RTT,nom disabled, ODT off Any valid 2
000 1 RTT,nom disabled, ODT on Any valid except self refresh, read 3
000–101 0 RTT,nom enabled, ODT off Any valid 2
000–101 1 RTT,nom enabled, ODT on Any valid except self refresh, read 3
110 and 111 X RTT,nom reserved, ODT on or off Illegal
Notes: 1. Assumes dynamic ODT is disabled (see Dynamic ODT (page 198) when enabled).
2. ODT is enabled and active during most writes for proper termination, but it is not illegal
for it to be off during writes.
3. ODT must be disabled during reads. The RTT,nom value is restricted during writes. Dynam-
ic ODT is applicable if enabled.
Nominal ODT resistance RTT,nom is defined by MR1[9, 6, 2], as shown in Mode Register 1
(MR1) Definition. The RTT,nom termination value applies to the output pins previously
mentioned. DDR3 SDRAM supports multiple RTT,nom values based on RZQ/n where n
can be 2, 4, 6, 8, or 12 and RZQ is 240ȍ. RTT,nom termination is allowed any time after the
DRAM is initialized, calibrated, and not performing read access, or when it is not in self
refresh mode.
Write accesses use RTT,nom if dynamic ODT (RTT(WR)) is disabled. If RTT,nom is used dur-
ing writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 87 (page 199)). ODT
timings are summarized in Table 84 (page 197), as well as listed in the Electrical Char-
acteristics and AC Operating Conditions table.
Examples of nominal ODT timing are shown in conjunction with the synchronous
mode of operation in Synchronous ODT Mode (page 204).
Table 84: ODT Parameters
Symbol Description Begins at Defined to
Definition for All
DDR3L Speed Bins Unit
ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ±tAON CWL + AL - 2 tCK
ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) ±tAOF CWL + AL - 2 tCK
tAONPD ODT asynchronous turn-on delay ODT registered HIGH RTT(ON) 2–8.5 ns
tAOFPD ODT asynchronous turn-off delay ODT registered HIGH RTT(OFF) 2–8.5 ns
ODTH4 ODT minimum HIGH time after ODT
assertion or write (BC4)
ODT registered HIGH
or write registration
with ODT HIGH
ODT registered
LOW
4tCK tCK
ODTH8 ODT minimum HIGH time after
write (BL8)
Write registration
with ODT HIGH
ODT registered
LOW
6tCK tCK
tAON ODT turn-on relative to ODTLon
completion
Completion of
ODTLon
RTT(ON) See Electrical Charac-
teristics and AC Oper-
ating Conditions table
ps
tAOF ODT turn-off relative to ODTLoff
completion
Completion of
ODTLoff
RTT(OFF) 0.5tCK ± 0.2tCK tCK
4Gb: x4, x8, x16 DDR3L SDRAM
On-Die Termination (ODT)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 197 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Dynamic ODT
In certain application cases, and to further enhance signal integrity on the data bus, it is
desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command, essentially changing the ODT termination on the fly. With
dynamic ODT RTT(WR)) enabled, the DRAM switches from nominal ODT RTT,nom) to dy-
namic ODT RTT(WR)) when beginning a WRITE burst and subsequently switches back to
nominal ODT RTT,nom) at the completion of the WRITE burst. This requirement is sup-
ported by the dynamic ODT feature, as described below.
Dynamic ODT Special Use Case
When DDR3 devices are architect as a single rank memory array, dynamic ODT offers a
special use case: the ODT ball can be wired high (via a current limiting resistor prefer-
red) by having RTT,nom disabled via MR1 and RTT(WR) enabled via MR2. This will allow
the ODT signal not to have to be routed yet the DRAM can provide ODT coverage dur-
ing write accesses.
When enabling this special use case, some standard ODT spec conditions may be viola-
ted: ODT is sometimes suppose to be held low. Such ODT spec violation (ODT not
LOW) is allowed under this special use case. Most notably, if Write Leveling is used, this
would appear to be a problem since RTT(WR) can not be used (should be disabled) and
RTT(NOM) should be used. For Write leveling during this special use case, with the DLL
locked, then RTT(NOM) maybe enabled when entering Write Leveling mode and disabled
when exiting Write Leveling mode. More so, RTT(NOM) must be enabled when enabling
Write Leveling, via same MR1 load, and disabled when disabling Write Leveling, via
same MR1 load if RTT(NOM) is to be used.
ODT will turn-on within a delay of ODTLon + tAON + tMOD + 1CK (enabling via MR1)
or turn-off within a delay of ODTLoff + tAOF + tMOD + 1CK. As seen in the table below,
between the Load Mode of MR1 and the previously specified delay, the value of ODT is
uncertain. this means the DQ ODT termination could turn-on and then turn-off again
during the period of stated uncertainty.
Table 85: Write Leveling with Dynamic ODT Special Case
Begin RTT,nom Uncertainty End RTT,nom Uncertainty I/Os RTT,nom Final State
MR1 load mode command:
Enable Write Leveling and RTT(NOM)
ODTLon + tAON + tMOD + 1CK DQS, DQS# Drive RTT,nom value
DQs No RTT,nom
MR1 load mode command:
Disable Write Leveling and RTT(NOM)
ODTLoff + tAOFF + tMOD + 1CK DQS, DQS# No RTT,nom
DQs No RTT,nom
Functional Description
The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to 1. Dynamic
ODT is not supported during DLL disable mode so RTT(WR) must be disabled. The dy-
namic ODT function is described below:
• Two RTT values are available—RTT,nom and RTT(WR).
– The value for RTT,nom is preselected via MR1[9, 6, 2].
– The value for RTT(WR) is preselected via MR2[10, 9].
4Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 198 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
• During DRAM operation without READ or WRITE commands, the termination is con-
trolled.
– Nominal termination strength RTT,nom is used.
– Termination on/off timing is controlled via the ODT ball and latencies ODTLon and
ODTLoff.
• When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered,
and if dynamic ODT is enabled, the ODT termination is controlled.
– A latency of ODTLcnw after the WRITE command: termination strength RTT,nom
switches to RTT(WR)
– A latency of ODTLcwn8 (for BL8, fixed or OTF) or ODTLcwn4 (for BC4, fixed or OTF)
after the WRITE command: termination strength RTT(WR) switches back to RTT,nom.
– On/off termination timing is controlled via the ODT ball and determined by ODT-
Lon, ODTLoff, ODTH4, and ODTH8.
– During the tADC transition window, the value of RTT is undefined.
ODT is constrained during writes and when dynamic ODT is enabled (see the table be-
low, Dynamic ODT Specific Parameters). ODT timings listed in the ODT Parameters ta-
ble in On-Die Termination (ODT) also apply to dynamic ODT mode.
Table 86: Dynamic ODT Specific Parameters
Symbol Description Begins at Defined to
Definition for All
DDR3L Speed
Bins Unit
ODTLcnw Change from RTT,nom to
RTT(WR)
Write registration RTT switched from RTT,nom
to RTT(WR)
WL - 2 tCK
ODTLcwn4 Change from RTT(WR) to
RTT,nom (BC4)
Write registration RTT switched from RTT(WR)
to RTT,nom
4tCK + ODTL off tCK
ODTLcwn8 Change from RTT(WR) to
RTT,nom (BL8)
Write registration RTT switched from RTT(WR)
to RTT,nom
6tCK + ODTL off tCK
tADC RTT change skew ODTLcnw completed RTT transition complete 0.5tCK ± 0.2tCK tCK
Table 87: Mode Registers for RTT,nom
MR1 (RTT,nom)
RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode RestrictionM9 M6 M2
0 0 0 Off Off n/a
0 0 1 RZQ/4 60 Self refresh
0 1 0 RZQ/2 120
0 1 1 RZQ/6 40
1 0 0 RZQ/12 20 Self refresh, write
1 0 1 RZQ/8 30
1 1 0 Reserved Reserved n/a
4Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 199 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 87: Mode Registers for RTT,nom (Continued)
MR1 (RTT,nom)
RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode RestrictionM9 M6 M2
1 1 1 Reserved Reserved n/a
Note: 1. RZQ = 240˖. If RTT,nom is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.
Table 88: Mode Registers for RTT(WR)
MR2 (RTT(WR))
RTT(WR) (RZQ) RTT(WR) (Ohm)M10 M9
0 0 Dynamic ODT off: WRITE does not affect RTT,nom
0 1 RZQ/4 60
1 0 RZQ/2 120
1 1 Reserved Reserved
Table 89: Timing Diagrams for Dynamic ODT
Figure and Page Title
Figure 111 (page 201) Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Figure 112 (page 201) Dynamic ODT: Without WRITE Command
Figure 113 (page 202) Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Figure 114 (page 203) Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Figure 115 (page 203) Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
4Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 200 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 111: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
ODTLon ODTLcwn4
ODTLcnw
WL
ODTLoff
T10 T11 T12 T13 T14 T15 T17
T16
CK
CK#
Command
Address
R
TT
ODT
DQ
DQS, DQS#
Valid
WRS4NOP NOP NOP NOP NOP NOP NOP
Don’t CareTransitioning
R
TT(WR)
R
TT,nom
R
TT,nom
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
NOP NOP NOP NOP NOP NOP NOP NOPNOP NOP
ODTH4
ODTH4
tAON (MIN) tADC (MIN) tADC (MIN) tAOF (MIN)
tAON (MAX) tADC (MAX) tADC (MAX) tAOF (MAX)
Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.
2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example,
ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command).
Figure 112: Dynamic ODT: Without WRITE Command
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
ODTLoff
T10 T11
CK
CK#
R
TT
Don’t CareTransitioning
Command
Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid
Address
DQS, DQS#
DQ
ODTH4
ODTLon
tAON (MAX)
tAON (MIN)
tAOF (MIN)
tAOF (MAX)
ODT
R
TT,nom
Notes: 1. AL = 0, CWL = 5. RTT,nom is enabled and RTT(WR) is either enabled or disabled.
2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT reg-
istered LOW at T5 is also legal.
4Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 201 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 113: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
ODTLcwn8
ODTLon
ODTLcnw
WL
tAOF (MAX)
T10 T11
CK
CK#
Address
RTT
ODT
DQ
DQS, DQS#
DI
b + 3
DI
b + 2
DI
b + 1
DI
bDI
b + 7
DI
b + 6
DI
b + 5
DI
b + 4
Valid
Don’t CareTransitioning
Command WRS8NOP NOPNOP NOP NOP NOP NOP NOP NOP NOP NOP
RTT(WR)
ODTH8 ODTLoff
tADC (MAX)
tAON (MIN)
tAOF (MIN)
Notes: 1. Via MRS or OTF; AL = 0, CWL = 5. If RTT,nom can be either enabled or disabled, ODT can be HIGH. RTT(WR) is enabled.
2. In this example, ODTH8 = 6 is satisfied exactly.
4Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 202 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 114: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
ODTLon
ODTLcnw
WL
T10 T11
CK
CK#
ODTLcwn4
DQS, DQS#
Address Valid
Don’t CareTransitioning
ODTLoff
Command WRS4NOP NOPNOP NOP NOP NOP NOP NOP NOP NOP NOP
DQ
DI
n + 3
DI
n + 2
DI
n + 1
DI
n
tADC (MIN) tAOF (MIN)
tAOF (MAX)
tADC (MAX)
tADC (MAX)
tAON (MIN)
ODTH4
ODT
RTT RTT(WR) RTT,nom
Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled.
2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example,
ODTH4 is satisfied. ODT registered LOW at T5 is also legal.
Figure 115: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
ODTLon
ODTLcnw
WL
T10 T11
CK
CK#
ODTLcwn4
DQS, DQS#
Address Valid
Command WRS4NOP NOPNOP NOP NOP NOP NOP NOP NOP NOP NOP
Don’t CareTransitioning
DQ DI
nDI
n + 3
DI
n + 2
DI
n + 1
ODTH4
tADC (MAX)
tAON (MIN)
tAOF (MIN)
tAOF (MAX)
ODTLoff
R
TT
RTT(WR)
ODT
Notes: 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom can be either enabled or disabled. If disabled,
ODT can remain HIGH. RTT(WR) is enabled.
2. In this example ODTH4 = 4 is satisfied exactly.
4Gb: x4, x8, x16 DDR3L SDRAM
Dynamic ODT
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 203 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked and
when either RTT,nom or RTT(WR) is enabled. Based on the power-down definition, these
modes are:
• Any bank active with CKE HIGH
• Refresh mode with CKE HIGH
• Idle mode with CKE HIGH
• Active power-down mode (regardless of MR0[12])
• Precharge power-down mode if DLL is enabled by MR0[12] during precharge power-
down
ODT Latency and Posted ODT
In synchronous ODT mode, RTT turns on ODTLon clock cycles after ODT is sampled
HIGH by a rising clock edge and turns off ODTLoff clock cycles after ODT is registered
LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around
each clock edge (see Table 90 (page 205)). The ODT latency is tied to the WRITE latency
(WL) by ODTLon = WL - 2 and ODTLoff = WL - 2.
Since write latency is made up of CAS WRITE latency (CWL) and additive latency (AL),
the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal.
The device’s internal ODT signal is delayed a number of clock cycles defined by the AL
relative to the external ODT signal. Thus, ODTLon = CWL + AL - 2 and ODTLoff = CWL +
AL - 2.
Timing Parameters
Synchronous ODT mode uses the following timing parameters: ODTLon, ODTLoff,
ODTH4, ODTH8, tAON, and tAOF. The minimum RTT turn-on time (tAON [MIN]) is the
point at which the device leaves High-Z and ODT resistance begins to turn on. Maxi-
mum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on.
Both are measured relative to ODTLon. The minimum RTT turn-off time (tAOF [MIN]) is
the point at which the device starts to turn off ODT resistance. The maximum RTT turn
off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured
from ODTLoff.
When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE com-
mand is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until
ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 117 (page 206)).
ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW
or from the registration of a WRITE command until ODT is registered LOW.
4Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 204 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 90: Synchronous ODT Parameters
Symbol Description Begins at Defined to
Definition for All
DDR3L Speed Bins Unit
ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ±tAON CWL + AL - 2 tCK
ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) ±tAOF CWL +AL - 2 tCK
ODTH4 ODT minimum HIGH time after ODT
assertion or WRITE (BC4)
ODT registered HIGH or write regis-
tration with ODT HIGH
ODT registered LOW 4tCK tCK
ODTH8 ODT minimum HIGH time after WRITE
(BL8)
Write registration with ODT HIGH ODT registered LOW 6tCK tCK
tAON ODT turn-on relative to ODTLon
completion
Completion of ODTLon RTT(ON) See Electrical Charac-
teristics and AC Oper-
ating Conditions ta-
ble
ps
tAOF ODT turn-off relative to ODTLoff
completion
Completion of ODTLoff RTT(OFF) 0.5tCK ± 0.2tCK tCK
Figure 116: Synchronous ODT
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
CWL - 2AL = 3AL = 3
tAON (MAX) tAOF (MAX)
T10 T11 T12 T13 T14 T15
CK
CK#
R
TT
ODT
Don’t CareTransitioning
R
TT,nom
CKE
tAOF (MIN)
ODTLoff = CWL + AL - 2
ODTLon = CWL + AL - 2
ODTH4 (MIN)
tAON (MIN)
Note: 1. AL = 3; CWL = 5; ODTLon = WL = 6.0; ODTLoff = WL - 2 = 6. RTT,nom is enabled.
4Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 205 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 117: Synchronous ODT (BC4)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tAOF (MAX)
tAOF (MIN)
tAON (MAX) tAOF (MAX)
T10 T11 T12 T13 T14 T15 T17T16
CK
CK#
R
TT
CKE
NOP WRS4NOP NOP NOP NOP NOPNOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOPCommand
Don’t CareTransitioning
tAON (MIN)
R
TT,nom
ODTLoff = WL - 2
ODTH4 (MIN)
ODTH4
ODTLoff = WL - 2
ODTLon = WL - 2
tAON (MIN) tAON (MAX)
ODTH4
ODTLon = WL - 2
tAOF (MIN)
ODT
R
TT,nom
Notes: 1. WL = 7. RTT,nom is enabled. RTT(WR) is disabled.
2. ODT must be held HIGH for at least ODTH4 after assertion (T1).
3. ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7).
4. ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the
WRITE command with ODT HIGH to ODT registered LOW.
5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must
also be satisfied from the registration of the WRITE command at T7.
4Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 206 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
ODT Off During READs
Because the device cannot terminate and drive at the same time, RTT must be disabled
at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if
either RTT,nom or RTT(WR) is enabled). RTT may not be enabled until the end of the post-
amble, as shown in the following example.
Note: ODT may be disabled earlier and enabled later than shown in Figure 118
(page 208).
4Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 207 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 118: ODT During READs
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T17
T16
CK
CK#
ValidAddress
DI
b + 3
DI
b + 2
DI
b + 1
DI
bDI
b + 7
DI
b + 6
DI
b + 5
DI
b + 4
DQ
DQS, DQS#
Don’t CareTransitioning
Command NOP NOP NOP NOP NOP NOP NOPNOP NOP NOP NOP NOP NOP NOP NOP NOPNOPREAD
ODTLon = CWL + AL - 2
ODT
tAON (MAX)
RL = AL + CL
ODTLoff = CWL + AL - 2
tAOF (MIN)
RTT RTT,nom
RTT,nom
tAOF (MAX)
Note: 1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL
+ CL = 11; CWL = 5; ODTLon = CWL + AL - 2 = 8; ODTLoff = CWL + AL - 2 = 8. RTT,nom is enabled. RTT(WR) is a “Don’t
Care.”
4Gb: x4, x8, x16 DDR3L SDRAM
Synchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 208 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Asynchronous ODT Mode
Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when
either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in pre-
charged power-down standby (via MR0[12]). Additionally, ODT operates asynchronous-
ly when the DLL is synchronizing after being reset. See Power-Down Mode (page 186)
for definition and guidance over power-down details.
In asynchronous ODT timing mode, the internal ODT command is not delayed by AL
relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT
by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON
and ODTLoff/tAOF, respectively, when ODT operates asynchronously.
The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termi-
nation circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-
on time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD
(MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH.
The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termi-
nation circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD
[MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD
(MAX) are measured from ODT being sampled LOW.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 209 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 119: Asynchronous ODT Timing with Fast ODT Transition
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tAONPD (MAX) tAOFPD (MAX)
T10 T11 T12 T13 T14 T15 T17
T16
CK
CK#
R
TT
ODT
R
TT,nom
Don’t CareTransitioning
CKE
tIH tIS tIH tIS
tAOFPD (MIN)
tAONPD (MIN)
Note: 1. AL is ignored.
Table 91: Asynchronous ODT Timing Parameters for All Speed Bins
Symbol Description Min Max Unit
tAONPD Asynchronous RTT turn-on delay (power-down with DLL off) 2 8.5 ns
tAOFPD Asynchronous RTT turn-off delay (power-down with DLL off) 2 8.5 ns
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 210 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry)
There is a transition period around power-down entry (PDE) where the DRAM’s ODT
may exhibit either synchronous or asynchronous behavior. This transition period oc-
curs if the DLL is selected to be off when in precharge power-down mode by the setting
MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW,
and ends when CKE is first registered LOW. tANPD is equal to the greater of ODTLoff +
1tCK or ODTLon + 1tCK. If a REFRESH command has been issued, and it is in progress
when CKE goes LOW, power-down entry ends tRFC after the REFRESH command, rath-
er than when CKE is first registered LOW. Power-down entry then becomes the greater
of tANPD and tRFC - REFRESH command to CKE registered LOW.
ODT assertion during power-down entry results in an RTT change as early as the lesser
of tAONPD (MIN) and ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon × tCK + tAON (MAX). ODT de-assertion during power-down entry
can result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff × tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF (MAX).
Table 92 (page 212) summarizes these parameters.
If AL has a large value, the uncertainty of the state of RTT becomes quite large. This is
because ODTLon and ODTLoff are derived from the WL; and WL is equal to CWL + AL.
Figure 120 (page 212) shows three different cases:
• ODT_A: Synchronous behavior before tANPD.
• ODT_B: ODT state changes during the transition period with tAONPD (MIN) <
ODTLon × tCK + tAON (MIN) and tAONPD (MAX) > ODTLon × tCK + tAON (MAX).
• ODT_C: ODT state changes after the transition period with asynchronous behavior.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 211 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Table 92: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period
Description Min Max
Power-down entry transition period
(power-down entry)
Greater of: tANPD or tRFC - refresh to CKE LOW
Power-down exit transition period
(power-down exit)
tANPD + tXPDLL
ODT to RTT turn-on delay
(ODTLon = WL - 2)
Lesser of: tAONPD (MIN) (2ns) or
ODTLon × tCK + tAON (MIN)
Greater of: tAONPD (MAX) (8.5ns) or
ODTLon × tCK + tAON (MAX)
ODT to RTT turn-off delay
(ODTLoff = WL - 2)
Lesser of: tAOFPD (MIN) (2ns) or
ODTLoff × tCK + tAOF (MIN)
Greater of: tAOFPD (MAX) (8.5ns) or
ODTLoff × tCK + tAOF (MAX)
tANPD WL - 1 (greater of ODTLoff + 1 or ODTLon + 1)
Figure 120: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
tAOFPD (MAX)
ODTLoff
T10 T11 T12 T13 Ta0 Ta1 Ta3Ta2
CK
CK#
DRAM R
TT
B
asynchronous
or synchronous
R
TT,nom
DRAM R
TT
C
asynchronous
R
TT,nom
Don’t CareTransitioning
CKE
NOP NOP NOPNOP NOPCommand NOPREF NOP NOP NOP NOPNOP NOP NOP NOPNOP NOP NOP
PDE transition period
Indicates break
in time scale
ODTLoff + tAOFPD (MIN)
tAOFPD (MAX)
tAOFPD (MIN)
ODTLoff + tAOFPD (MAX)
tAOFPD (MIN)
tANPD
tAOF (MIN)
tAOF (MAX)
DRAM R
TT
A
synchronous R
TT,nom
ODT A
synchronous
ODT C
asynchronous
ODT B
asynchronous
or synchronous
tRFC (MIN)
Note: 1. AL = 0; CWL = 5; ODTL(off) = WL - 2 = 3.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 212 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)
The DRAM’s ODT can exhibit either asynchronous or synchronous behavior during
power-down exit (PDX). This transition period occurs if the DLL is selected to be off
when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins
tANPD prior to CKE first being registered HIGH, and ends tXPDLL after CKE is first reg-
istered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The
transition period is tANPD + tXPDLL.
ODT assertion during power-down exit results in an RTT change as early as the lesser of
tAONPD (MIN) and ODTLon × tCK + tAON (MIN), or as late as the greater of tAONPD
(MAX) and ODTLon × tCK + tAON (MAX). ODT de-assertion during power-down exit
may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff × tCK +
tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff × tCK + tAOF (MAX).
Table 92 (page 212) summarizes these parameters.
If AL has a large value, the uncertainty of the RTT state becomes quite large. This is be-
cause ODTLon and ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure
121 (page 214) shows three different cases:
• ODT C: Asynchronous behavior before tANPD.
• ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTL-
off × tCK + tAOF (MIN), and ODTLoff × tCK + tAOF (MAX) > tAOFPD (MAX).
• ODT A: ODT state changes after the transition period with synchronous response.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 213 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 121: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit
T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Tb0 Tb1 Tb2 Tc0 Tc1 Td0 Td1
Tc2
CK
CK#
Don’t CareTransitioning
ODT C
synchronous
NOP NOPNOP
COMMAND NOP NOP NOP NOP NOP NOP NOP NOP NOP
R
TT
B
asynchronous
or synchronous
DRAM R
TT
A
asynchronous
DRAM R
TT
C
synchronous
R
TT,nom
NOPNOP
ODT B
asynchronous
or synchronous
CKE
tAOF (MIN)
R
TT,nom
Indicates break
in time scale
ODTLoff + tAOF (MIN)
tAOFPD (MAX)
ODTLoff + tAOF (MAX)
tXPDLL
tAOF (MAX)
ODTLoff
ODT A
asynchronous
PDX transition period
tAOFPD (MIN)
tAOFPD (MAX)
R
TT,nom
tANPD
tAOFPD (MIN)
Note: 1. CL = 6; AL = CL - 1; CWL = 5; ODTLoff = WL - 2 = 8.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 214 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)
If the time in the precharge power-down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods overlap. When
overlap occurs, the response of the DRAM’s RTT to a change in the ODT state can be
synchronous or asynchronous from the start of the power-down entry transition period
to the end of the power-down exit transition period, even if the entry period ends later
than the exit period.
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the re-
sponse of the DRAM’s RTT to a change in the ODT state may be synchronous or asyn-
chronous from the start of power-down exit transition period to the end of the power-
down entry transition period.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 215 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Figure 122: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4
CK
CK#
CKE
Command
Don’t CareTransitioning
tXPDLL
tRFC (MIN)
NOP NOP NOP NOP NOP NOP NOP NOP NOPNOPREF NOP NOPNOP NOP
PDE transition period
PDX transition period
Indicates break
in time scale
tANPD
Short CKE low transition period (R TT change asynchronous or synchronous)
tANPD
Note: 1. AL = 0, WL = 5, tANPD = 4.
Figure 123: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
CK
CK#
Command
Don’t CareTransitioning
NOP NOP NOPNOP NOP NOP NOP NOP NOP NOPNOPNOP NOP NOPNOP NOP
tANPD tXPDLL
Indicates break
in time scale
Ta0 Ta1 Ta2 Ta3 Ta4
CKE
tANPD
Short CKE HIGH transition period (RTT change asynchronous or synchonous)
Note: 1. AL = 0, WL = 5, tANPD = 4.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 216 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
4Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous to Synchronous ODT Mode Transition (Power-
Down Exit)
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN 217 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
