1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating Symbol MPSA05
MPSA55 MPSA06
MPSA56 Unit
Collector–Emitter Voltage VCEO 60 80 Vdc
Collector–Base Voltage VCBO 60 80 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current – Continuous IC500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA(1) 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0) MPSA05, MPSA55
MPSA06, MPSA56
V(BR)CEO 60
80 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0) V(BR)EBO 4.0 — Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) ICES — 0.1 µAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) MPSA05, MPSA55
(VCB = 80 Vdc, IE = 0) MPSA06, MPSA56
ICBO —
—0.1
0.1
µAdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSA05/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Voltage and current are negative
for PNP transistors
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN PNP
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE 100
100 —
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) — 0.25 Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) — 1.2 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz) MPSA05
MPSA06
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz) MPSA55
MPSA56
fT100
50
—
—
MHz
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN–ON TIME
–1.0 V VCC +40 V
RL
* CS
t
6.0 pF
RB
100
100
Vin
5.0
m
F
tr = 3.0 ns
0
+10 V
5.0
m
s
OUTPUT
TURN–OFF TIME
+VBB VCC+40 V
RL
* CS
t
6.0 pF
RB
100
100
Vin
5.0
m
F
tr = 3.0 ns
5.0
m
s
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. MPSA05/06 Current–Gain —
Bandwidth Product Figure 3. MPSA55/56 Current–Gain —
Bandwidth Product
Figure 4. MPSA05/06 Capacitance Figure 5. MPSA55/56 Capacitance
Figure 6. MPSA05/06 Switching Time Figure 7. MPSA55/56 Switching Time
100 2002.0
IC, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
IC, COLLECTOR CURRENT (mA)
–100 –200–10
200
100
70
50
20
10 1000.1
VR, REVERSE VOLTAGE (VOLTS)
80
60
40
20
10
8.0
VR, REVERSE VOLTAGE (VOLTS)
–1.0 –100–0.1
100
70
50
30
20
10
–2.020
VCE = 2.0 V
TJ = 25
°
CVCE = –2.0 V
TJ = 25
°
C
TJ = 25
°
C
fT, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
NPN PNP
C, CAPACITANCE (pF)
3.0 5.0 7.0 10 20 30 50 70 –2.0 –3.0 –5.0 –7.0 –20 –30 –50 –70
30
fT, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
501.0 2.0 5.00.2 0.5
6.0
4.0
Cibo
Cobo 7.0
5.0 –0.2 –0.5 –5.0 –10 –20 –50
TJ = 25
°
C
Cibo
Cobo
2010
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10
IC, COLLECTOR CURRENT (mA)
–10–5.0
500
200
100
50
20
10 –100100
t, TIME (ns)
t, TIME (ns)
50 200 500
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
tr
–50 –200 –500
1.0 k
5.0 7.0
30
70
300
700
30 70
td @ VBE(off) = 0.5 V
300
700
70
30
–7.0 –300–70–20 –30
VCC = –40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
tr
td @ VBE(off) = –0.5 V
C, CAPACITANCE (pF)
300
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 8. MPSA05/06 Active–Region Safe
Operating Area Figure 9. MPSA55/56 Active–Region Safe
Operating Area
Figure 10. MPSA05/06 DC Current Gain Figure 11. MPSA55/56 DC Current Gain
Figure 12. MPSA05/06 “ON” Voltages Figure 13. MPSA55/56 “ON” Voltages
2.0 5000.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40 10
, DC CURRENT GAIN
NPN PNP
TJ = 125
°
C
10 5001.0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0100
TJ = 25
°
C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
101.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
200
100
50
20
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–10 –50–1.0
–500
–200
–100
–50
–20
–10 –2030
IC, COLLECTOR CURRENT (mA)
–2.0 –5.0
–1.0 k
2.0 5.0 50
1.0 k
IC, COLLECTOR CURRENT (mA)
1.0 ms
1.0 s
TA = 25
°
C
MPSA05
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA06
10070203.0 7.0
100
m
s
TC = 25
°
C
1.0 3.0 5.0
VCE = 1.0 V
20 10030 50 200 300
hFE
25
°
C
–55
°
C
0.5 2.0 5.0 20020 50
–2.0 –500–0.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40 –10
, DC CURRENT GAIN
TJ = 125
°
C
–1.0 –5.0
VCE = –1.0 V
–20 –100–50 –200
hFE
25
°
C
–55
°
C
–10 –500–1.0
IC, COLLECTOR CURRENT (mA)
–1.0
–0.8
–0.6
–0.4
–0.2
0–100
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –1.0 V
–0.5 –2.0 –5.0 –200–20 –50
700
300
30
70
1.0 ms
1.0 s
TA = 25
°
C
MPSA55
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA56
100
m
s
TC = 25
°
C
–3.0 –7.0 –30 –100–70
–30
–70
–300
–700
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 14. MPSA05/06 Collector Saturation
Region Figure 15. MPSA55/56 Collector Saturation
Region
Figure 16. MPSA05/06 Base–Emitter
Temperature Coefficient Figure 17. MPSA55/56 Base–Emitter
Temperature Coefficient
100 5000.5
IC, COLLECTOR CURRENT (mA)
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
IC, COLLECTOR CURRENT (mA)
0.1 100.05
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
IB, BASE CURRENT (mA)
1.0
TJ = 25
°
C
RVB, TEMPERATURE COEFFICIENT (mV/ C)
NPN PNP
10
R
q
VB for VBE
q
°
RVB, TEMPERATURE COEFFICIENT (mV/ C)
q
°
50
IC =
100 mA
IC =
50 mA IC =
250 mA IC =
500 mA
IC =
10 mA
, COLLECTOR–EMITTER VOLTAGE (VOLTS)VCE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)VCE
1.0 2.0 5.0 20 50 200
202.0 5.00.2 0.5
–100 –500–0.5
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8 –10
R
q
VB for VBE
–1.0 –2.0 –5.0 –20 –50 –200
–0.1 –10–0.05
–1.0
–0.8
–0.6
–0.4
–0.2
0–1.0
TJ = 25
°
C
–50
IC =
–100 mA
IC =
–50 mA IC =
–250 mA IC =
–500 mA
IC =
–10 mA
–20–2.0 –5.0–0.2 –0.5
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
t, TIME (ms)
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
Z
θ
JC(t) = r(t)
•
R
θ
JC
TJ(pk) – TC = P(pk) Z
θ
JC(t)
Z
θ
JA(t) = r(t)
•
R
θ
JA
TJ(pk) – TA = P(pk) Z
θ
JA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
t1t2
DUTY CYCLE, D = t1/t2
P(pk)
D = 0.5
0.2
0.1
0.02 0.01
SINGLE PULSE
SINGLE PULSE
0.05
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
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MPSA05/D
*MPSA05/D*
◊
