© Semiconductor Components Industries, LLC, 2019
September, 2019 − Rev. P0
1Publication Order Number:
FFSH1065B−F085/D
FFSH1065B-F085
Advance Information
Silicon Carbide Schottky
Diode
650 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 51 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery/No Forward Recovery
•AEC−Q101 Qualified
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Automotive HEV−EV Onboard Chargers
•Automotive HEV−EV DC−DC Converters
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
www.onsemi.com
TO−247−2LD
CASE 340DA
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y&Z&3&K
FFSH
1065B
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH1065B = Specific Device Code
1
Cathode
2
Anode
FFSH1065B−F085
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 650 V
EAS Single Pulse Avalanche Energy (Note 1) 51 mJ
IFContinuous Rectified Forward Current @ TC < 142°C 10 A
Continuous Rectified Forward Current @ TC < 135°C 11.5
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms600 A
TC = 150°C, 10 ms535 A
IF,SM Non-Repetitive Forward Surge Current
TC = 25°C
Half-Sine Pulse, tp = 8.3 ms 42 A
Ptot Power Dissipation TC = 25°C 83 W
TC = 150°C 14 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
TO247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 51 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14.5 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 1.81 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
VFForward Voltage IF = 10 A, TC = 25°C−1.5 1.7 V
IF = 10 A, TC = 125°C−1.7 2.0
IF = 10 A, TC = 175°C−2 2.4
IRReverse Current VR = 650 V, TC = 25°C−0.5 40 mA
VR = 650 V, TC = 125°C−1 80
VR = 650 V, TC = 175°C−2 160
QCTotal Capacitive Charge V = 400 V −25 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −421 −pF
VR = 200 V, f = 100 kHz −40 −
VR = 400 V, f = 100 kHz −34 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH1065B−F085 FFSH1065B TO−247−2LD
(Pb−Free / Halogen Free)
30 Units / Tube
FFSH1065B−F085
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3
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
01234
0
5
10
15
20
T
J= 175oC
T
J= 125oC
T
J= 75oC
T
J= 25oC
TJ= −55o
IF, FORWARD CURRENT (A)
C
VF, FORWARD VOLTAGE (V)
100 200 300 400 500 600
10
−9
10
−8
10
−7
10
−6
10
IR, REVERSE CURRENT (A)
−5
VR, REVERSE VOLTAGE (V)
T
J= 175oC
T
J= 125oC
T
J= −55oC
T
J= 25oC
T
J= 75oC
650
25 50 75 100 125 150 175
0
30
60
90
120
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
IF, PEAK FORWARD CURRENT (A)
D = 1
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 175
0
20
40
60
80
PTOT , POWER DISSIPATION (W)
100
TC, CASE TEMPERATURE (oC)
0 100 200 300 400 500 600
0
10
20
30
QC, CAPACITIVE CHARGE (nC)
40
VR, REVERSE VOLTAGE (V)
650 0.1 1 10 100 650
10
100
CAPACITANCE (pF)
1000
VR, REVERSE VOLTAGE (V)
FFSH1065B−F085
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4
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 7. Capacitance Stored Energy
Figure 8. Junction-to-Case Transient Thermal Response Curve
10−610−510−410−310−210−11
0.001
0.01
0.1
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
2
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
ZqJC (t) = r(t) x RqJC
RqJC = 1.81oC/W
Duty Cycle, D = t1 / t 2
Peak TJ = PDM x ZqJC (t) + TC
PDM
t1
t2
0 100 200 300 400 500 600
0
2
4
6
8
EC, CAPACITIVE ENERGY ( mJ)
10
VR, REVERSE VOLTAGE (V)
650
TEST CIRCUIT AND WAVEFORMS
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
LR
+
−
DUT
CURRENT
SENSE VDD
VDD
Q1
IV
VAVL
tt0t1t2
IL
IL
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
FFSH1065B−F085
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6
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FFSH1065B−F085/D
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