NPN Silicon Planar Medium Power High Gain Transistors PRELIMINARY INFORMATION ZTX689B ZTX690B ZTX692B ZTX694B FEATURES @ High gain 500 min. @ Up to 3amps continuous current @ Gain specified up to Gamps @ 1.5 watt power dissipation at Tamb = 25C* Voltages up to 120V @ Very low saturation voltages DESCRIPTION A range of high gain, high performance, medium power transistors encapsulated in the popular E-line (TO-92 style) plastic package. The 1.5watt performance and outstanding electrical characteristics permit use in a wide variety of applications, including lamp, solenoid and relay drivers, motor drives and DC-DC convertors. ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) The E-line package is formed by transfer moulding a silicone plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. Parameter Symbol | ZTX689B | ZTX690B | ZTX692B | ZTX694B| Unit Collector-Base Voltage Voeo 20 45 70 120 Vv Collector-Emitter Voltage Vceo 20 45 70 120 Vv Emitter-Base Voltage VeBo 5 5 5 5 Vv Peak Pulse Current lom 8 6 2 1 A Continuous Collector Current Ie 3 2 0.5 A Practical Power Dissipation* Prop 1.5 Ww Power Dissipation at Tamp = 25C Prot 1.0 Ww derate above 25C 5.7 mW/C Operating & Storage -55 to +200 c Temperature Range *The power which can be dissipated assuming device mounted in typical manner on P.C.B. with copper equal to 1in? minimum. SE145 ZTX689B, ZTX690B, ZTX692B, ZTX694B ELECTRICAL CHARACTERISTICS (Test conditions at T,,, = 25C unless otherwise stated). Parameter Symbol 2TX689B ZTX690B Unit Conditions Min. | Typ. |Max.| Min. | Typ. |Max. Collector-base Visricso| 20 45 - Vi iig=100pA breakdown voltage Collector-emitter Visriceo| 20 - _ 45 - _ Vi fig=10mA breakdown voltage Emitter-base Visriepo | 5 - 5 _ Vo iig=100uA breakdown voltage Collector cut-off logo - {| O11], - | pA |Vegp=16V current 0.1 | vA |Vcog=35V Emitter cut-off lego _ - | 0.1 | 0.1 | pA |Veg=4V current Collector-emitter V ce isat) _ 10.1 _ | 0.1 | V |le=100mA, saturation voltage p= 0.5mA 0.5 | V |Ile=1A, Ig=5mA* 0.5 | _ Vi ic=2A, Ip= 10mA* Base-emitter Veetsat) _ - |Qa9] - ~ 10.9] V [Ilp=1A, saturation voltage Ip= 10mA* Base-emitter turn-on | Vee;on) - - |O09] | 0.9] V JIlc=1A, voltage Veg = 2V* Static forward Hee 500] -~ }500/ _ lc=100mA, current transfer ratio Vee =2V ~ _ |400) - Ic=1A, Vee =2V* 400 | - | 1650] - _ Io = 2A, Veep =2Vv* 150 | - _ _ _ Ic =6A, Vee =2V* Transition frequency | fy 150 _ = 150 _ |MHz]Ii-=50mA, Vee = 5V f = 100MHz Input capacitance Cibo ~ 60 - 50 | pF |Veg=0.8V, f=1MHz Output capacitance | Co, ~ 25 - _ 25 | pF |Vce=10V, f= 1MHz Switching times ton ~ 50 _~ - 50 | ns |ig=500mA, ley =50mA tort ~ |1000) |1000] | ns |lp7=50mA, Voc = 10V *Measured under pulsed conditions. Pulse width = 300us SE146 . Duty cycle < 2%. ZTX689B, ZTX690B, ZTX692B, ZTX694B ELECTRICAL CHARACTERISTICS (Test conditions at T,,, = 25C unless otherwise stated). Parameter Symbol ZTX692B ZTX694B Unit Conditions Min. | Typ. |Max.|] Min. | Typ. |Max. Collector-base Visricao| 70 - | 120) - Vi [io = 100pA breakdown voltage Collector-emitter Visriceo | 70 - [120] - - Vi |ig=10mA breakdown voltage Emitter-base Vipryepo | 5 _ ~ 5 _ _ Vo | le=100uA breakdown voltage Collector cut-off lcBo ~ | 0.1 - - | vA |Vcg=55V current 0.1 | vA | Veg = 100V Emitter cut-off lego _ _ 0.1 _ _ 0.1 | wA | Vegp=4V current Collector-emitter Veeisay | | [0.15] | |0.25] V |le=100mA, saturation voltage lg=0.5mA 0.5} V {l-=400mA, Ig =5mA* 0.5 _ _ Vi |ig=1A, Igp= 10mA* Base-emitter Vecisat) _ _ 0.9 - _ 0.9 | V |Iic=1A, saturation voltage lg = 10mA* Base-emitter turn-on | Veeion) _ ~ |O09} - 0.9) V Ile=1A, voltage Voce = 2V* Static forward Hee 500 | ~ | 500} le =100mA, current transfer ratio Veep =2V - |400; _ lc =200mA, Vop = 2V* _ _ ~ | 150} _ lc =400mA, Veg = 2V* 400 | _ _ Ic =500mA, Vee = 2V* 150 | _ _ _ _ Ic=1A, Vce=2V* Transition frequency | f; 150 _ _ 150 _ |MHz]|l-=50mA, Vcg = 5V f = 100MHz Input capacitance Cibo ~ 37 _ _ 33 _ pF | Veg=0.5V, f= 1MHz Output capacitance | C,., 14 - _ 41 _ pF | Vce=10V, f= 1MHz Switching times ton 50 _ - | 200} | ns [l-=500mA, Ip, = 5O0mA tort 1200]; |1600} ns |lgo=50mA, Veco = 10V *Measured under pulsed conditions. Pulse width = 300us. Duty cycle < 2%. SE147