Fa Me ricniics TIP110A PNP Epitaxial Silicon Transistor MEDIUM POWER LINEAR SWITCHING APPLICATIONS e Collector current 10A e Collector dissipation Pe =75W (Te = 25 ) (ABSOLUTE MAXIMUM RATINGS (Ta = 25 ) ) Characteristic Symbol | Rating Unit Coliector-Base Voltage Veso -20 Vv Collector-Emitter Voltage Yeo 12 Vv Emitter-Base Voltage Vepo 7 Vv Collector Current Ie -10 A Collector Dissipation Pe 75 WwW Junction Temperature Tj 150 c Storage Temperature Tstg -55 ~150 c TOQ-220 1. Base 2. Collector 3. Emitter {ELECTRICAL CHARACTERISTICS (Ta = 25%) )} Characteristic Symbol Test Condition Min Max | Unit Collector-Base Breakdown Voltage BVao | lce=-ImA, p=0 "20 V Collector-EmitterBreakdown Voltage BY czo Ic = -10mA, Ip =O -12 Vv Emitter-Base Breakdown Voltage BVegpo Ie =-imA, l =0 7 Vv Collector Cutoff Current Icpo Ves= -15V,12=0 -100 nA Emitter Cutoff Current Tgpo Ven= -3V,1=0 -100 nA DC Current Gain hegi Veg= -3V,1L=-6A 110 hrez Veg= -3V,1 = -10A 90 Collector-Emitter Saturation Voltage Vee rsan I= 6A Ip= -600mA 0.5 Vv Base-Emitter Saturation Voltage Vee (san Io -6A, Vee= -4V 1.5 Vv 8-12 Ic(A).COLLECTOR CURRENT A).COLLECTOR CURRENT Ie DC CURRENT GAIN In =-60mA Ip=50mA 1B=-40mA | B=- ip= [B=~10mA O -1-2-3-4-5 -6-7-8-9 ~10 Vce .COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER BREAKDOWN VOLTAGE 0.10 -0.09 -0.08 -0.07 -0.08 0,05 -0.04 -0.03 -0.02 0.01 0 0-5-10~15~20-25-30-35- 40-45-50 Vcr .COLLECTOR-EMITTER VOLTAGE TIP110A PNP Epitaxial Silicon Transistor COLLECTOR-BASE BREAKDOWN VOLTAGE Ic(A).COLLECTOR CURRENT -0.001 0 0 -5-10-15-20-25-30-35- 40-45-50 Ves COLLECTOR-BASE VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE Ie(A).COLLECTOR CURRENT 0 -0.1 -0.3 ~-0.5 -0.7 -0.9-1 Vce .COLLECTOR-EMITTER VOLTAGE 8-13