DISCRETE SEMICONDUCTORS DAWA SlAlleler BAV9OSW High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Semiconductors VT 1999 May 11 PHILIPSPhilips Semiconductors Product specification High-speed double diode FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS e High-speed switching in e.g. surface mounted circuits. LIMITING VALUES DESCRIPTION The BAV99W consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small SOT323 plastic SMD package. BAV99W PINNING PIN DESCRIPTION 1 anode 2 cathode 3 common connection Top view Marking code: A7. Fig.1 Simplified outline (SOT323; SC-70) and symbol. MAM094 In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Var repetitive peak reverse voltage - 85 Vv VA continuous reverse voltage - 75 Vv IF continuous forward current single diode loaded; note 1; - 150 mA see Fig.2 double diode loaded; note 1; - 130 mA see Fig.2 IFRM repetitive peak forward current - 500 mA lFsu non-repetitive peak forward square wave; Tj = 25 C prior to current surge; see Fig.4 t=1 us - 4 A t=1ms - 1 A t=1s - 0.5 A Prot total power dissipation Tamb = 25 C; note 1 - 200 mw T stg storage temperature 65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11Philips Semiconductors Product specification High-speed double diode BAV9OW ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode Ve forward voltage see Fig.3 lce=1mA 715 mV lc =10mA 855 mV Ip =50mA 1 V Ip = 150 mA 1.25 V IR reverse current see Fig.5 VR =25V 30 nA Va =75V 1 HA Va =25V; 7; = 150C 30 LA Va = 75V; 7; = 150C 50 LA Cy diode capacitance f = 1 MHz; Va = 0; see Fig.6 1.5 pF ter reverse recovery time when switched from IF = 10 mAto |4 ns IR = 10 mA; R, = 100 Q; measured at In = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ir = 10 mA; 1.75 Vv t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih j-tp thermal resistance from junction to tie-point 300 KW Rih ja thermal resistance from junction to ambient | note 1 625 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11 3Philips Semiconductors Product specification High-speed double diode BAV9OW GRAPHICAL DATA MGA889 MBG382 200 single diode loaded IF (mA) double diode loaded 100 0 100 200 Tamb (C) (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) 1) =25 C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of forward temperature. voltage. MBG704 l-FSM (A) 10 1071 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 11 4Philips Semiconductors Product specification High-speed double diode BAV9OW MGA884 MBG446 f=1 MHz; Tj =25 C. Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. 1999 May 11 5Philips Semiconductors Product specification High-speed double diode BAV9OW Oe 1 tr tp a H ~ yo | 10% - Re = 502 I + <t S L _| | SAMPLING r r ' Tq TTT OSCILLOSCOPE V=VatlpxRg R}=50 2 fi 2%, (1) | | VR yoo MGA881 input signal output signal (1) last mA. Fig.7 Reverse recovery voltage test circuit and waveforms. , 1kQ 450 Q V 7 | F 30% Y Rg= 50 2 OSCILLOSCOPE Vi D.U.T. r R)=50 2 MGA882 output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1999 May 11 6Philips Semiconductors Product specification High-speed double diode BAV9OW PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 I | y | ! i 1 Q I i A I Ay 4 I , Y Cc 1 2 \ f J e | >} lef bool | 6 fS[w OLE] P [e] detail X 0 4 2mm bee scale DIMENSIONS (mm are the original dimensions) Ay UNIT A max bp c D E e ey He Lp Qa Vv w 14 0.4 | 025] 22 | 1.35 22 | 045 | 0.23 mm Jos | ' | o3 | oto] te | 115} 13 | 85 | 50 | ots | o13 | OF | F REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE SOT323 SC-70 f--} 97-02-28 1999 May 11 7Philips Semiconductors Product specification High-speed double diode BAV9OW DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 11 8Philips Semiconductors Product specification High-speed double diode BAV9OW NOTES 1999 May 11 9Philips Semiconductors Product specification High-speed double diode BAV9OW NOTES 1999 May 11 10Philips Semiconductors Product specification High-speed double diode BAV9OW NOTES 1999 May 11 11Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp12 Philips Semiconductors Date of release: 1999 May 11 Document order number: 9397 750 05944 pet PHILIPS Lede