Features
•Single Supply Voltage, Range 2.7V to 3.6V
•Single Supply for Read and Write
•Software Protected Programming
•Fast Read Access Time – 120 ns
•Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
•Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
•Two 8K Bytes Boot Blocks with Lockout
•Fast Sector Program Cycle Time – 20 ms Max
•Internal Program Control and Timer
•DATA Polling for End of Program Detection
•Typical Endurance > 10,000 Cycles
•CMOS and TTL Compatible Inputs and Outputs
•Green (Pb/Halide-free) Packaging Option
1. Description
The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable
Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words
by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol-
ogy, the device offers access times to 120 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 50µA. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
Low Voltage Flash family of products.
To allow for simple in-system reprogrammability, the AT29BV010A does not require
high input voltages for programming. The device can be operated with a single 2.7V to
3.6V supply. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29BV010A is performed on a sector basis; 128 bytes of data
are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are captured at
microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automati-
cally erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
1-Megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT29BV010A
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AT29BV010A
2. Pin Configurations
2.1 32-lead PLCC Top View
2.2 32-lead TSOP (Type 1) Top View
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
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AT29BV010A
3. Block Diagram
4. Device Operation
4.1 Read
The AT29BV010A is accessed like an EPROM. When CEandOE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state whenever CE or OE is high. This dual-line con-
trol gives designers flexibility in preventing bus contention.
4.2 Software Data Protection Programming
The AT29BV010A has 1024 individual sectors, each 128 bytes. Using the software data protec-
tion feature, byte loads are used to enter the 128 bytes of a sector to be programmed. The
AT29BV010A can only be programmed or reprogrammed using the software data protection
feature. The device is programmed on a sector basis. If a byte of data within the sector is to be
changed, data for the entire 128-byte sector must be loaded into the device. The data in any
byte that is not loaded during the programming of its sector will be indeterminate. The
AT29BV010A automatically does a sector erase prior to loading the data into the sector. An
erase command is not required.
Software data protection protects the device from inadvertent programming. A series of three
program commands to specific addresses with specific data must be presented to the device
before programming may occur. The same three program commands must begin each program
operation. All software program commands must obey the sector program timing specifications.
Power transitions will not reset the software data protection feature, however the software fea-
ture will guard against inadvertent program cycles during power transitions.
Any attempt to write to the device without the 3-byte command sequence will start the internal
write timers. No data will be written to the device; however, for the duration of tWC, a read opera-
tion will effectively be a polling operation.
After the software data protection’s 3-byte command code is given, a byte load is performed by
applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The
address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by
the first rising edge of CE or WE.
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AT29BV010A
The 128 bytes of data must be loaded into each sector. Any byte that is not loaded during the
programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the
device, they are simultaneously programmed during the internal programming period. After the
first data byte has been loaded into the device, successive bytes are entered in the same man-
ner. Each new byte to be programmed must have its high to low transition on WE (or CE) within
150 s of the low to high transition of WE (or CE) of the preceding byte. If a high to low transition
is not detected within 150 s of the last low to high transition, the load period will end and the
internal programming period will start. A7 to A16 specify the sector address. The sector address
must be valid during each high to low transition of WE (or CE). A0 to A6 specify the byte address
within the sector. The bytes may be loaded in any order; sequential loading is not required.
4.3 Hardware Data Protection
Hardware features protect against inadvertent programs to the AT29BV010A in the following
ways: (a) VCC sense—if VCC is below 2.0V (typical), the program function is inhibited; (b) VCC
power on delay—once VCC has reached the VCC sense level, the device will automatically time
out 10 ms (typical) before programming; (c) Program inhibit—holding any one of OE low, CE
high or WE high inhibits program cycles; and (d) Noise filter— pulses of less than 15 ns (typical)
on the WE or CE inputs will not initiate a program cycle.
4.4 Input Levels
While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs OE, CE
and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device.
The I/O lines can only be driven from 0 to VCC + 0.6V.
4.5 Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It may be
accessed by hardware or software operation. The hardware operation mode can be used by an
external programmer to identify the correct programming algorithm for the Atmel product. In
addition, users may wish to use the software product identification mode to identify the part (i.e.
using the device code), and have the system software use the appropriate sector size for pro-
gram operations. In this manner, the user can have a common board design for 256K to 4-
megabit densities and, with each density’s sector size in a memory map, have the system soft-
ware apply the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both methods of identification.
4.6 DATA Polling
The AT29BV010A features DATA polling to indicate the end of a program cycle. During a pro-
gram cycle an attempted read of the last byte loaded will result in the complement of the loaded
data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and
the next cycle may begin. DATA polling may begin at any time during the program cycle.
4.7 Toggle Bit
In addition to DATA polling the AT29BV010A provides another method for determining the end
of a program or erase cycle. During a program or erase operation, successive attempts to read
data from the device will result in I/O6 toggling between one and zero. Once the program cycle
has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may
begin at any time during a program cycle.
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AT29BV010A
4.8 Optional Chip Erase Modes
The entire device may be erased by using a 6-byte software code. Please see Software Chip
Erase application note for details.
4.9 Boot Block Programming Lockout
The AT29BV010A has two designated memory blocks that have a programming lockout feature.
This feature prevents programming of data in the designated block once the feature has been
enabled. Each of these blocks consists of 8K bytes; the programming lockout feature can be set
independently for either block. While the lockout feature does not have to be activated, it can be
activated for either or both blocks.
These two 8K memory sections are referred to as boot blocks. Secure code which will bring up a
system can be contained in a boot block. The AT29BV010A blocks are located in the first 8K
bytes of memory and the last 8K bytes of memory. The boot block programming lockout feature
can therefore support systems that boot from the lower addresses of memory or the higher
addresses. Once the programming lockout feature has been activated, the data in that block can
no longer be erased or programmed; data in other memory locations can still be changed
through the regular programming methods. To activate the lockout feature, a series of seven
program commands to specific addresses with specific data must be performed. Please see
Boot Block Lockout Feature Enable Algorithm.
If the boot block lockout feature has been activated on either block, the chip erase function will
be disabled.
4.9.1 Boot Block Lockout Detection
A software method is available to determine whether programming of either boot block section is
locked out. See Software Product Identification Entry and Exit sections. When the device is in
the software product identification mode, a read from location 00002H will show if programming
the lower address boot block is locked out while reading location 1FFF2H will do so for the upper
boot block. If the data is FE, the corresponding block can be programmed; if the data is FF, the
program lockout feature has been activated and the corresponding block cannot be pro-
grammed. The software product identification exit mode should be used to return to standard
operation.
5. Absolute Maximum Ratings*
Temperature Under Bias ............................... -55C to +125C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65C to +150C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on A9 (including NC Pins)
with Respect to Ground ...................................-0.6V to +13.5V
6
0519F–FLASH–9/08
AT29BV010A
Notes: 1. After power is applied and VCC is at the minimum specified data sheet value, the system should wait 20 ms before an
operational mode is started.
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code is 1F. The Device Code is 35.
5. See details under Software Product Identification Entry/Exit
.
6. DC and AC Operating Range
AT29BV010A-12 AT29BV010A-15
Operating Temperature (Case) Industrial -40°C - 85°C -40°C - 85°C
VCC Power Supply(1) 2.7V to 3.6V 2.7V to 3.6V
7. Operating Modes
Mode CE OE WE Ai I/O
Read VIL VIL VIH Ai DOUT
Program(2) VIL VIH VIL Ai DIN
Standby/Write Inhibit VIH X(1) X X High Z
Program Inhibit X X VIH
Program Inhibit X VIL X
Output Disable X VIH X High Z
Product Identification
Hardware VIL VIL VIH
A1 - A16 = VIL,A9=V
H(3),A0=V
IL Manufacturer Code(4)
A1 - A16 = VIL,A9=V
H(3),A0=V
IH Device Code(4)
Software(5) A0 = VIL, A1 - A16 = VIL Manufacturer Code(4)
A0 = VIH, A1 - A16 = VIL Device Code(4)
8. DC Characteristics
Symbol Parameter Condition Min Max Units
ILO Output Leakage Current VI/O =0VtoV
CC 1µA
ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC 50 µA
ISB2 VCC Standby Current TTL CE = 2.0V to VCC 1mA
ICC VCC Active Current f = 5 MHz; IOUT = 0 mA; VCC = 3.6V 15 mA
VIL Input Low Voltage 0.6 V
VIH Input High Voltage 2.0 V
VOL Output Low Voltage IOL = 1.6 mA; VCC = 3.0V 0.45 V
VOH Output High Voltage IOH = -100 A; VCC = 3.0V 2.4 V
7
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AT29BV010A
10. AC Read Waveforms
Notes: 1. CE may be delayed up to tACC -t
CE after the address transition without impact on tACC.
2. OE may be delayed up to tCE -t
OE after the falling edge of CE without impact on tCE or by tACC -t
OE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
9. AC Read Characteristics
Symbol Parameter
AT29BV010A-12 AT29BV010A-15
UnitsMin Max Min Max
tACC Address to Output Delay 120 150 ns
tCE(1) CE to Output Delay 120 150 ns
tOE(2) OE to Output Delay 0 50 0 100 ns
tDF(3)(4) CE or OE to Output Float 0 30 0 50 ns
tOH
Output Hold from OE, CE or Address, whichever
Occurred First 00ns
8
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AT29BV010A
11. Input Test Waveforms and Measurement Level
12. Output Test Load
Note: 1. These parameters are characterized and not 100% tested.
tR,t
F<5ns
13. Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol Typ Max Units Conditions
CIN 4 6 pF VIN =0V
COUT 812pFV
OUT =0V
Min Max Units
tAS,t
OES Address, OE Set-up Time
tAH Address Hold Time
tCS Chip Select Set-up Time
tCH Chip Select Hold Time
tWP Write Pulse Width (WE or CE)
tDS Data Set-up Time
tDH,t
OEH Data, OE Hold Time
tWPH Write Pulse Width High
9
0519F–FLASH–9/08
AT29BV010A
15. AC Byte Load Waveforms(1)(2)
15.1 WE Controlled
15.2 CE Controlled
14. AC Byte Load Characteristics
Symbol Parameter
10 ns
100 ns
0ns
0ns
200 ns
100 ns
10 ns
200 ns
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AT29BV010A
17. Software Protected Program Waveform
Notes: 1. OE must be high when WE and CE are both low.
2. A7 through A16 must specify the sector address during each high to low transition of WE (or CE) after the software code has
been entered.
3. All bytes that are not loaded within the sector being programmed will be indeterminate.
18. Programming Algorithm(1)
16. Program Cycle Characteristics
Symbol Parameter Min Max Units
tWC Write Cycle Time 20 ms
tAS Address Set-up Time 10 ns
tAH Address Hold Time 100 ns
tDS Data Set-up Time 100 ns
tDH Data Hold Time 10 ns
tWP Write Pulse Width 200 ns
tBLC Byte Load Cycle Time 150 s
tWPH Write Pulse Width High 200 ns
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
LOAD DATA
TO
SECTOR (128 BYTES)(3)
WRITES ENABLED
ENTER DATA
PROTECT STATE(2)
Notes for software program code:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Data Protect state will be re-activated at end of
program cycle.
3. 128 bytes of data MUST BE loaded.
Min Typ Max Units
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AT29BV010A
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
20. Data Polling Waveforms
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
22. Toggle Bit Waveforms(1)(3)
Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit.
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
19. Data Polling Characteristics(1)(2)
Symbol Parameter
tDH Data Hold Time 10 ns
tOEH OE Hold Time 10 ns
tOE OE to Output Delay(2) ns
tWR Write Recovery Time 0 ns
21. Toggle Bit Characteristics(1)
Symbol Parameter Min Typ Max Units
tDH Data Hold Time 10 ns
tOEH OE Hold Time 10 ns
tOE OE to Output Delay(2) ns
tOEHP OE High Pulse 150 ns
tWR Write Recovery Time 0 ns
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AT29BV010A
23. Software Product Identification
Entry(1)
24. Software Product Identification
Exit(1)
Notes: 1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. A1 - A16 = VIL.
Manufacturer Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if
powered down.
4. The device returns to standard operation mode.
5. Manufacturer Code is 1F. The Device Code is 35.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 90
TO
ADDRESS 5555
PAUSE 20 mS ENTER PRODUCT
IDENTIFICATION
MODE
(2)(3)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA F0
TO
ADDRESS 5555
PAUSE 20 mS EXIT PRODUCT
IDENTIFICATION
MODE
(4)
25. Boot Block Lockout
Feature Enable Algorithm(1)
Notes: 1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Lockout feature set on lower address boot block.
3. Lockout feature set on higher address boot block.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 40
TO
ADDRESS 5555
LOAD DATA 00
TO
ADDRESS 00000H
(2)
PAUSE 20 mS
LOAD DATA FF
TO
ADDRESS 1FFFFH
(3)
PAUSE 20 mS
Package Type
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0519F–FLASH–9/08
AT29BV010A
26. Ordering Information
26.1 Green Package Option (Pb/Halide-free)
tACC
(ns)
ICC (mA)
Ordering Code Package Operation RangeActive Standby
120 15 0.05 AT29BV010A-12JU
AT29BV010A-12TU
32J
32T Industrial
(-40to 85C)
150 15 0.05 AT29BV010A-15JU
AT29BV010A-15TU
32J
32T
32J 32-Lead, Plastic J-Leaded Chip Carrier (PLCC)
32T 32-Lead, Thin Small Outline Package (TSOP)
14
0519F–FLASH–9/08
AT29BV010A
27. Packaging Information
27.1 32J – PLCC
DRAWING NO. REV.
2325 Orchard Parkway
San Jose, CA 95131
R
TITLE
32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) B
32J
10/04/01
1.14(0.045) X 45 PIN NO. 1
IDENTIFIER
1.14(0.045) X 45
0.51(0.020)MAX
0.318(0.0125)
0.191(0.0075)
A2
45 MAX (3X)
A
A1
B1 E2
B
e
E1 E
D1
D
D2
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE.
2. Dimensions D1 and E1 do not include mold protrusion.
Allowable protrusion is .010 (0.254 mm) per side. Dimension D1
and E1 include mold mismatch and are measured at the extreme
material condition at the upper or lower parting line.
3. Lead coplanarity is 0.004 (0.102 mm) maximum.
A 3.175 – 3.556
A1 1.524 – 2.413
A2 0.381 – –
D 12.319 – 12.573
D1 11.354 – 11.506 Note 2
D2 9.906 – 10.922
E 14.859 – 15.113
E1 13.894 – 14.046 Note 2
E2 12.471 – 13.487
B 0.660 – 0.813
B1 0.330 – 0.533
e 1.270 TYP
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0519F–FLASH–9/08
AT29BV010A
27.2 32T – TSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
32T, 32-lead (8 x 20 mm Package) Plastic Thin Small Outline
Package, Type I (TSOP) B
32T
10/18/01
PIN 1
D1 D
Pin 1 Identifier
b
e
EA
A1
A2
0º ~ 8º c
L
GAGE PLANE
SEATING PLANE
L1
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This package conforms to JEDEC reference MO-142, Variation BD.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
A – – 1.20
A1 0.05 – 0.15
A2 0.95 1.00 1.05
D 19.80 20.00 20.20
D1 18.30 18.40 18.50 Note 2
E 7.90 8.00 8.10 Note 2
L 0.50 0.60 0.70
L1 0.25 BASIC
b 0.17 0.22 0.27
c 0.10 – 0.21
e 0.50 BASIC
0519F–FLASH–9/08
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